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    • 16. 发明授权
    • Semiconductor device testing apparatus and method for manufacturing the same
    • 半导体器件测试装置及其制造方法
    • US06828810B2
    • 2004-12-07
    • US10207145
    • 2002-07-30
    • Masatoshi KanamaruYoshishige EndoTakanori AonoRyuji KohnoHiroya ShimizuNaoto BanHideyuki Aoki
    • Masatoshi KanamaruYoshishige EndoTakanori AonoRyuji KohnoHiroya ShimizuNaoto BanHideyuki Aoki
    • G01R3102
    • G01R1/0466
    • A semiconductor device testing apparatus is realized, which allows contactors to be positioned throughout the wafer surface highly accurately for uniform contact, testing a large-sized wafer, and cost reduction. A plurality of divided contactor blocks is formed with a positioning groove. The groove is used to position the plurality of contactor blocks with a positioning frame. Because the contactor blocks are divided into plurals, it is less likely that a partial surface distortion affects other portions to impair surface flatness as compared with the case where a plurality of non-divided contactors is formed integrally, and the plurality of contactor blocks can be brought into contact with a wafer to be tested uniformly. Additionally, even though abnormality is generated in a part of the contactor blocks, only the part of the contactor blocks is replaced. Therefore, replacement costs can be reduced as compared with the case where a plurality of non-divided contactors is formed integrally.
    • 实现半导体器件测试装置,其允许接触器高精度地定位在整个晶片表面,用于均匀接触,测试大尺寸晶片以及降低成本。 多个分开的接触器块形成有定位槽。 凹槽用于定位具有定位框架的多个接触器块。 由于接触器块被分成多个,与多个非分隔接触器形成为一体的情况相比,部分表面变形对其他部分的影响较小可能损害表面平坦度,并且多个接触器块可以 与待测试的晶片均匀接触。 此外,即使在接触器块的一部分中产生异常,仅更换接触器块的一部分。 因此,与多个非分割接触器一体形成的情况相比,可以降低更换成本。
    • 17. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US06955870B2
    • 2005-10-18
    • US10274422
    • 2002-10-17
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • G01R1/06G01R1/073G01R31/28H01L21/66G03C5/00
    • G01R1/07314
    • A method of manufacturing a semiconductor device has forming process for forming a semiconductor device on a major surface of a wafer, and testing process for testing defect of the semiconductor device formed on the wafer. The testing process includes a step bringing a testing apparatus into contact with test electrodes of the semiconductor device. The testing apparatus has a contactor including a plurality of probes that come into contact with the test electrodes of the semiconductor device to be tested, and secondary electrodes electrically connected to the probes and disposed on a surface opposite to the probes; a substrate on which electrodes electrically communicated to the contactor by a conducting device. The conducting device is so formed that stress applied to the conducting device in the state where the probes are in contact with the test electrodes is larger than stress applied to the conducting device in the state where the probes are not in contact with the test electrodes.
    • 制造半导体器件的方法具有在晶片的主表面上形成半导体器件的形成工艺和用于测试形成在晶片上的半导体器件的缺陷的测试过程。 测试过程包括使测试设备与半导体器件的测试电极接触的步骤。 测试装置具有接触器,该接触器包括与待测半导体器件的测试电极接触的多个探针,以及与探针电连接并设置在与探针相对的表面上的二次电极; 电极通过导电装置与接触器电连通的基板。 导电装置形成为在探针与测试电极接触的状态下施加到导电装置的应力大于在探针不与测试电极接触的状态下施加到导电装置的应力。
    • 18. 发明授权
    • Testing apparatus for carrying out inspection of a semiconductor device
    • 用于对半导体器件进行检查的测试装置
    • US06952110B2
    • 2005-10-04
    • US10934046
    • 2004-09-03
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • G01R1/06G01R1/073G01R31/28H01L21/66G01R31/02
    • G01R1/07314
    • A method of manufacturing a semiconductor device has forming process for forming a semiconductor device on a major surface of a wafer, and testing process for testing defect of the semiconductor device. The testing process includes bringing a testing apparatus into contact with test electrodes of the semiconductor device. The testing apparatus has a contactor including probes that come into contact with the test electrodes of the semiconductor device, and secondary electrodes electrically connected to the probes and disposed on a surface opposite to the probes; and a substrate on which electrodes electrically communicated to the contactor by a conducting device. The conducting device is so formed that stress applied to the conducting device in the state where the probes are in contact with the test electrodes is larger than stress applied to the conducting device in the state where the probes are not in contact with the test electrodes.
    • 制造半导体器件的方法具有在晶片的主表面上形成半导体器件的形成工艺和用于测试半导体器件的缺陷的测试过程。 测试过程包括使测试设备与半导体器件的测试电极接触。 测试装置具有接触器,其包括与半导体器件的测试电极接触的探针,以及与探针电连接并设置在与探针相对的表面上的次级电极; 以及电极通过导电装置与接触器电连通的基板。 导电装置形成为在探针与测试电极接触的状态下施加到导电装置的应力大于在探针不与测试电极接触的状态下施加到导电装置的应力。
    • 19. 发明申请
    • Testing apparatus for carrying out inspection of a semiconductor device
    • 用于对半导体器件进行检查的测试装置
    • US20050032252A1
    • 2005-02-10
    • US10934046
    • 2004-09-03
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • G01R1/06G01R1/073G01R31/28H01L21/66G01R31/02G01R31/26
    • G01R1/07314
    • A method of manufacturing a semiconductor device has forming process for forming a semiconductor device on a major surface of a wafer, and testing process for testing defect of the semiconductor device formed on the wafer. The testing process includes a step bringing a testing apparatus into contact with test electrodes of the semiconductor device. The testing apparatus has a contactor including a plurality of probes that come into contact with the test electrodes of the semiconductor device to be tested, and secondary electrodes electrically connected to the probes and disposed on a surface opposite to the probes; a substrate on which electrodes electrically communicated to the contactor by a conducting device. The conducting device is so formed that stress applied to the conducting device in the state where the probes are in contact with the test electrodes is larger than stress applied to the conducting device in the state where the probes are not in contact with the test electrodes.
    • 制造半导体器件的方法具有在晶片的主表面上形成半导体器件的形成工艺和用于测试形成在晶片上的半导体器件的缺陷的测试过程。 测试过程包括使测试设备与半导体器件的测试电极接触的步骤。 测试装置具有接触器,该接触器包括与待测半导体器件的测试电极接触的多个探针,以及与探针电连接并设置在与探针相对的表面上的二次电极; 电极通过导电装置与接触器电连通的基板。 导电装置形成为在探针与测试电极接触的状态下施加到导电装置的应力大于在探针不与测试电极接触的状态下施加到导电装置的应力。