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    • 15. 发明授权
    • Turning zigzag embroidery machine
    • 转动锯齿绣机
    • US5438942A
    • 1995-08-08
    • US133143
    • 1993-10-20
    • Akira OkunoTakashi IsobeKeiichi Ito
    • Akira OkunoTakashi IsobeKeiichi Ito
    • D05B19/12D05B19/14D05B19/16D05B21/00D05C5/06D05C9/06
    • D05B19/12D05B19/14D05B19/16D05B21/00
    • Disclosed herein is a turning zigzag embroidery machine adapted to read in from outside needle center data N, which permits scaling up or down or alteration of an embroidery pattern, and to convert the needle center data into frame center data C to reproduce an embroidery pattern in an improved form. Of externally read-in needle center data N (.DELTA.X, .DELTA.Y, .theta., W) and the data of needle center N on X-Y axes, this turning zigzag embroidery machine transforms, for example, data Nk (Xk, Yk, .theta.k, Wk) of needle center Nk into data Ck (xk, yk, .theta.k, Wk) of frame center Ck on x-y axes by arithmetic conversion. Then, in order to advance an embroidering needle 10 to the needle center Nk, a rotatable frame is shifted in the directions of x- and y-axes and at the same time it is turned through a given rotational angle .theta.=.theta.k in the direction of arrow E. At each of the advanced needle center positions, the embroidering needle is imparted with a rocking motion across a rocking width Wk to make a stitch at a given stitch point Sk, thereby reproducing an embroidery pattern on a cloth.
    • 这里公开了一种转向锯齿绣花机,其适用于从针头中心数据N读入,其允许按比例增加或减少或改变刺绣图案,并将针头中心数据转换成框架中心数据C以再现刺绣图案 一个改进的形式。 对于外部读入针头数据N(DELTA X,DELTA Y,θ,W)和XY轴上的针头中心N的数据,该转弯锯齿绣花机将例如数据Nk(Xk,Yk,θk ,Wk)通过算术转换在xy轴上的帧中心Ck的数据Ck(xk,yk,θk,wk)中。 然后,为了将刺绣针10推进到针中心Nk,可旋转的框架沿x轴和y轴的方向移动,并且同时通过给定的旋转角θ=θk转动 在每个先进的针中心位置,刺绣针在摆动宽度Wk上施加摇摆运动,以在给定针迹点Sk处形成针迹,从而在布上再现刺绣图案。
    • 18. 发明授权
    • Image processing apparatus, image forming apparatus, and computer readable medium storing program
    • 图像处理装置,图像形成装置和计算机可读介质存储程序
    • US08427660B2
    • 2013-04-23
    • US12876605
    • 2010-09-07
    • Keiichi Ito
    • Keiichi Ito
    • G06F3/12G06F11/00
    • G06F3/1284G06F3/121G06F3/1215G06F3/1235G06F3/124G06K15/022G06K15/1856G06K15/408
    • An image processing apparatus includes a first dynamic reconfigurable processor, a second dynamic reconfigurable processor, and a controller. The first dynamic reconfigurable processor is assigned to a first group of image processing operations that are executed regardless of whether or not correction data from a printer is used. The second dynamic reconfigurable processor is assigned to a second group of image processing operations that are executed using correction data from the printer. The controller performs control to execute the first group of image processing operations during interruption of operation of the printer by changing an image processing setting so as to cause the second dynamic reconfigurable processor assigned to the second group of image processing operations to execute the first group of image processing operations.
    • 图像处理装置包括第一动态可重构处理器,第二动态可重构处理器和控制器。 第一动态可重配置处理器被分配给执行的第一组图像处理操作,而不管使用来自打印机的校正数据是否被使用。 第二动态可重构处理器被分配给使用来自打印机的校正数据执行的第二组图像处理操作。 控制器执行控制以通过改变图像处理设置来执行打印机操作中断期间的第一组图像处理操作,从而使分配给第二组图像处理操作的第二动态可重配置处理器执行第一组 图像处理操作。
    • 19. 发明申请
    • COMPOUND SEMICONDUCTOR DEPOSITION METHOD AND APPARATUS
    • 化合物半导体沉积方法和装置
    • US20120058627A1
    • 2012-03-08
    • US13266337
    • 2010-04-28
    • Motoichi OhtsuTadashi KawazoeShunsuke YamazakiKoichi KajiyamaMichinobu MizumuraKeiichi Ito
    • Motoichi OhtsuTadashi KawazoeShunsuke YamazakiKoichi KajiyamaMichinobu MizumuraKeiichi Ito
    • H01L21/20B05C9/08
    • C23C16/481C23C14/548C23C16/303C23C16/52C30B25/00C30B29/403H01L21/0237H01L21/0242H01L21/0254H01L21/0262H01L33/0062
    • Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
    • 提供一种在将化合物半导体沉积在基板上时以纳米级调节三元或更高系统的化合物半导体的发光波长的化合物半导体沉积方法。 在将三元或更高系统的化合物半导体沉积在衬底上的化合物半导体沉积方法中,将化合物半导体所需的理想激发能的能量较小的传播光照射到衬底13上,同时将化合物半导体沉积在 基板13,基于沉积在基板13上的化合物半导体的微粒的照射的传播光产生近场光,基于产生的近场光,以多个阶段形成化合物半导体的新的振动电平,以及 对应于激发能的化合物半导体中的成分被传播光激发,通过振动水平,激发能量等于或小于传播光的能量的新的振动水平被激发,从而解吸部件 。
    • 20. 发明授权
    • Parameter adjusting device and parameter adjusting means
    • 参数调整装置和参数调整装置
    • US07533356B2
    • 2009-05-12
    • US10594842
    • 2005-03-29
    • Masahiro MurakawaKeiichi ItoMichiko Miura
    • Masahiro MurakawaKeiichi ItoMichiko Miura
    • G06F17/50G06N3/00
    • G06N3/126G06F17/5045G06F2217/08
    • A parameter adjusting device and a parameter adjusting method configured to adjust a great number of parameters used for a circuit design model of a semiconductor element such as a transistor within a short time. A parameter adjusting device adapts a circuit design model wherein a formula for analysis is derived based on a surface potential such as, for example, the HiSIM, as the circuit design model of a semiconductor element; defines a chromosome wherein a respective great number of parameters of the model are genes; and optimizes the parameter based on property measured data of a tested element, using a genetic algorithm. Parameter adjustment comprises a first step adjusting the parameters which determine the structure of the semiconductor element based on the property measured data of a long channel group; and a second step adjusting nonadjusted parameters based on the property measured data of various lengths of channels with reference to a result of the first step. Adjustment of the optimum parameters within a short time and with a high degree of accuracy, which was conventionally difficult, can be performed.
    • 参数调整装置和参数调整方法,其被配置为在短时间内调整用于诸如晶体管的半导体元件的电路设计模型的大量参数。 参数调整装置适应电路设计模型,其中基于诸如例如HiSIM的表面电位导出用于分析的公式作为半导体元件的电路设计模型; 定义了染色体,其中模型的相应大量参数是基因; 并使用遗传算法优化基于测试元素的属性测量数据的参数。 参数调整包括:第一步骤,基于长通道组的特性测量数据调整确定半导体元件的结构的参数; 以及参照第一步骤的结果,基于各种信道长度的属性测量数据来调整非调整参数的第二步骤。 可以在短时间内以高精度调节最佳参数,这在传统上是困难的。