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11. 发明申请

US20050062058A1 Semiconductor light emitting device and manufacturing method for the same 审中-公开
标题翻译：半导体发光器件及其制造方法相同
公开(公告)号：US20050062058A1
公开(公告)日：2005-03-24
申请号：US10947252
申请日：2004-09-23
申请人： Masaya Ishida
发明人： Masaya Ishida
IPC分类号： H01S5/022 , H01L23/00 , H01L29/22 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/223 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/73265 , H01L2924/01021 , H01L2924/01046 , H01L2924/01057 , H01L2924/01063 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01S5/0021 , H01S5/02272 , H01S5/02476 , H01S5/2231 , H01S5/34333 , H01L2924/00014
摘要： An object of the present invention is to provide a semiconductor light emitting device having a long lifespan by improving yield in mounting. In order to achieve this object, a semiconductor light emitting device includes a semiconductor light emitting element chip having an n-type GaN substrate, a heat sink made of SiC onto which the semiconductor light emitting element chip is mounted, a solder made of AuSn which joins the n-type GaN substrate to the heat sink, a support base onto which the heat sink is mounted, and a solder made of In or SnAgCu which joins the heat sink to the support base. The solder has a thickness in a range from 1 μm or more to 20 μm or less, and the heat sink has a thickness in a range from 100 μm or more to 500 μm or less.
摘要翻译：本发明的目的是提供一种通过提高安装成品率而具有长寿命的半导体发光器件。为了实现该目的，半导体发光器件包括具有n型GaN衬底的半导体发光元件芯片，安装半导体发光元件芯片的由SiC制成的散热器，由AuSn制成的焊料，将n型GaN衬底连接到散热器，其上安装有散热器的支撑基座和由In或SnAgCu制成的焊料，其将散热器连接到支撑基座。焊料的厚度在1μm以上至20μm以下的范围内，散热器的厚度为100μm以上且500μm以下。

12. 发明授权

US06436524B1 Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US06436524B1
公开(公告)日：2002-08-20
申请号：US08913974
申请日：1998-01-13
申请人： Masaya Ishida , Takeo Kawase
发明人： Masaya Ishida , Takeo Kawase
IPC分类号： G11B566
CPC分类号： G11B11/10586 , G11B11/10508 , G11B11/10584 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： When recording using magnetic field modulation recording, the magneto-optical recording medium which is disclosed is capable of satisfactory recording with a low magnetic field. This recording medium is a layered superposition of a recording layer 13 and an auxiliary recording layer 14 having a film thickness of less than or equal to 100 angstroms. The recording layer 13 is a film having an easy perpendicular axis of magnetization whose value of magnetization at room temperature is at least 150 emu/cc, and for example a heavy rare earth—transition metal alloy, a magnetic multilayer film which employs a precious metal, an oxide like a garnet or Spinel ferrite, or some other magnetic alloy may be used. The auxiliary recording layer 14 is typically a heavy rare earth—transition metal alloy, and has a Curie temperature higher (desirably at least 30K higher) than that of the recording layer 13. It is desirable to further provide a stabilizing layer superimposed upon the recording layer 13 which has a lower Curie temperature and also a higher coercive field at room temperature than the recording layer recording layer 13. If HREx(Fe1−yCoy)1−x is used for the recording layer recording layer 13 (here HRE is a heavy rare earth metal), it is desirable that 0.08≦x≦0.20 and also 0.0≦y≦0.3.
摘要翻译：当使用磁场调制记录进行记录时，所公开的磁光记录介质能够以低磁场良好的记录。该记录介质是具有薄膜厚度小于或等于100埃的记录层13和辅助记录层14的分层叠加。记录层13是具有容易的垂直磁化轴的膜，其室温下的磁化强度至少为150emu / cc，例如重稀土 - 过渡金属合金，使用贵金属的磁性多层膜，可以使用像石榴石或尖晶石铁氧体的氧化物，或其它一些磁性合金。辅助记录层14通常是重稀土 - 过渡金属合金，并且居里温度高于记录层13的居里温度（期望地至少高30K）。期望进一步提供叠加在记录上的稳定层层13具有较低的居里温度，并且在室温下比记录层记录层13具有更高的矫顽场。如果将HREx（Fe1-yCoy）1-x用于记录层记录层13（这里HRE是重的稀土金属），希望0.08 <= x <= 0.20，并且0.0 <= y <= 0.3。

13. 发明授权

US5792571A Magneto-optical recording medium having large kerr rotational angle in short wavelength range 失效
公开(公告)号：US5792571A
公开(公告)日：1998-08-11
申请号：US789417
申请日：1997-01-29
申请人： Hiromu Miyazawa , Shoji Hoshina , Satoshi Shimokawato , Masaaki Ichikawa , Masaya Ishida , Takeo Kawase , Toshiaki Mikoshiba , Satoshi Nebashi , Tatsuya Shimoda
发明人： Hiromu Miyazawa , Shoji Hoshina , Satoshi Shimokawato , Masaaki Ichikawa , Masaya Ishida , Takeo Kawase , Toshiaki Mikoshiba , Satoshi Nebashi , Tatsuya Shimoda
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10593 , G11B11/10582 , G11B11/10586 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： In a magneto-optical recording medium, a protective layer 14, a first magnetic layer 11 formed of a light rare earth element--heavy rare earth element--transition metal alloy, a second magnetic layer 12 formed of a light rare earth element--heavy rare earth element--transition metal alloy, a third magnetic layer 13 formed of a light rare earth element--heavy rare earth element--transition metal alloy, another protective layer 15, and a reflection layer 16 are laminated in sequence on a transparent substrate 10. The first, second and third magnetic layers are sandwiched so as to form a recording film 17. The compositions of the first and third magnetic layers are so selected as to provide a large Kerr rotational angle in a short wavelength range (400 to 700 nm), which is high in the ratio of light rare earth element. On the other hand, the composition of the second magnetic layer is so selected as to be prominent in the characteristics for forming a perpendicular magnetized film, which is high in the ratio of heavy rare earth element. The recording film 17 formed by sandwiching the first, second and third magnetic layers has a large Kerr rotational angle in a short wavelength range as a whole, and further provides a high coercivity. The recording film 17 is formed thin (400 angstrom or less) so that light can transmit sufficiently therethrough. Further, when the three layers of sandwich structure is combined with the reflection layer 16, a more larger Kerr rotational angle can be obtained.

14. 发明授权

US08951601B2 Electrochemical cell structure and method of fabrication 有权
标题翻译：电化学电池结构及制造方法
公开(公告)号：US08951601B2
公开(公告)日：2015-02-10
申请号：US11598738
申请日：2006-11-14
申请人： Shunpu Li , Masaya Ishida
发明人： Shunpu Li , Masaya Ishida
IPC分类号： B05D5/12
CPC分类号： H01G9/2068 , B82Y30/00 , B82Y40/00 , H01G9/2031 , H01G9/2063 , H01L51/0004 , H01L51/0019 , H01L2251/105 , Y02E10/542 , Y02E60/13 , Y10T29/49115
摘要： One limitation to the realisation of mass produced electrochemical cells is a lack of high resolution patterning techniques providing accurate alignment. A method of fabricating a patterned structure on a polymer layer for the manufacture of an electrochemical cell is provided. The method comprises: depositing a polymer layer upon a substrate; and stamping the polymer layer to form an embossed polymer layer using an embossing tool, the embossing tool having a first array of adjacent cells, spaced from one another and extending from the stamping face of the embossing tool and thereby forming a second array of adjacent cells, spaced from one another and extending as cavities within the embossed polymer layer.
摘要翻译：实现批量生产的电化学电池的一个限制是缺乏提供精确对准的高分辨率图案化技术。提供了一种在用于制造电化学电池的聚合物层上制造图案化结构的方法。该方法包括：在基底上沉积聚合物层; 并且使用压花工具冲压所述聚合物层以形成压花聚合物层，所述压花工具具有彼此间隔开并从压花工具的冲压面延伸的相邻电池的第一阵列，从而形成相邻电池的第二阵列彼此间隔开并且在压花聚合物层内作为空腔延伸。

15. 发明申请

US20110174288A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 审中-公开
标题翻译：氮化物半导体激光光源的制造方法以及氮化物半导体激光光源的制造装置
公开(公告)号：US20110174288A1
公开(公告)日：2011-07-21
申请号：US13064534
申请日：2011-03-30
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： F24B1/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

16. 发明授权

US07939433B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
公开(公告)号：US07939433B2
公开(公告)日：2011-05-10
申请号：US12656758
申请日：2010-02-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/20
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

17. 发明授权

US07833834B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US07833834B2
公开(公告)日：2010-11-16
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

18. 发明授权

US07573924B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07573924B2
公开(公告)日：2009-08-11
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
IPC分类号： H01S5/00 , H01S3/04 , H01S3/08
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译：氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆，以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为最多100 ppm。

19. 发明授权

US07502387B2 Communication terminal, message center, time control program storage medium, and remote time setting program storage medium 有权
标题翻译：通信终端，消息中心，时间控制程序存储介质和远程时间设置程序存储介质
公开(公告)号：US07502387B2
公开(公告)日：2009-03-10
申请号：US11175226
申请日：2005-07-07
申请人： Masaya Ishida , Toshifumi Aso , Shinya Kimura , Masahiko Fuse , Kazutaka Satoh , Makoto Shinohara , Makoto Funaoka , Eiji Ishioka , Masayuki Kurisu
发明人： Masaya Ishida , Toshifumi Aso , Shinya Kimura , Masahiko Fuse , Kazutaka Satoh , Makoto Shinohara , Makoto Funaoka , Eiji Ishioka , Masayuki Kurisu
IPC分类号： H04J3/06
CPC分类号： G04R20/14 , H04W4/12
摘要： A communication terminal having a wireless communication facility including sending and receiving a message which is sent to a receiving terminal without a send request from a receiving terminal through a message center, including: a message sending/receiving unit sending and receiving the message; a time control unit controlling current time; a message analysis unit analyzing a message which is sent by a message center, received by the message sending/receiving unit, and includes time information assigned by a message center, and retrieving the time information; and a time setting unit setting in the time control unit a time indicated by the time information retrieved by the message analysis unit as a current time.
摘要翻译：一种具有无线通信设备的通信终端，包括发送和接收消息，所述消息通过消息中心从接收终端发送到接收终端而没有发送请求，包括：消息发送/接收单元发送和接收消息; 控制当前时间的时间控制单元; 消息分析单元，分析由消息中心发送的消息，由消息发送/接收单元接收，并且包括由消息中心分配的时间信息，以及检索时间信息; 以及时间设定单元，在时间控制单元中设置由由消息分析单元检索的时间信息指示的时间作为当前时间。

20. 发明申请

US20070122931A1 Electrochemical cell structure and method of fabrication 有权
标题翻译：电化学电池结构及制造方法
公开(公告)号：US20070122931A1
公开(公告)日：2007-05-31
申请号：US11598774
申请日：2006-11-14
申请人： Barry McGregor , Masaya Ishida , Tatsuya Shimoda
发明人： Barry McGregor , Masaya Ishida , Tatsuya Shimoda
IPC分类号： H01L31/00 , H01L21/00 , H01L21/8242
CPC分类号： H01G9/2031 , H01G9/2081 , H01L51/0004 , Y02E10/542
摘要： An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprises a first conductive layer; a metal oxide layer formed on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer formed on the metal oxide layer; a second conductive layer; and an electrolyte between the functional dye layer and the second conductive layer; wherein at least one of the first and second conductive layers is transparent. In one embodiment, the electrochemical cell further comprises separating means formed on the first conductive layer and surrounding each of the plurality of adjacent metal oxide cells.
摘要翻译：提供电化学电池及其制造方法。电化学电池包括第一导电层; 形成在所述第一导电层上的金属氧化物层，所述金属氧化物层包括彼此间隔开的多个相邻的金属氧化物电池; 形成在金属氧化物层上的功能染料层; 第二导电层; 和功能性染料层与第二导电层之间的电解质; 其中所述第一和第二导电层中的至少一个是透明的。在一个实施例中，电化学电池还包括形成在第一导电层上并围绕多个相邻的金属氧化物单元中的每一个的分离装置。

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