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    • 12. 发明授权
    • Thin film magnetic head having very narrow track width and manufacturing method for the same
    • 具有非常窄轨道宽度的薄膜磁头及其制造方法
    • US06466403B1
    • 2002-10-15
    • US09532750
    • 2000-03-22
    • Kiyoshi SatoToshihiro KuriyamaToshinori Watanabe
    • Kiyoshi SatoToshihiro KuriyamaToshinori Watanabe
    • G11B5147
    • G11B5/3967G11B5/3116G11B5/313
    • The present invention provides a thin film magnetic head having a recording track width of 1 &mgr;m or less, and a method for manufacturing the thin film magnetic head having a recording track width of 1 &mgr;m or less. In the thin film magnetic head, an upper core layer and a lower core layer extend from a back region toward a magnetic pole tip region, and are exposed at a medium opposing surface, and a gap layer is provided, in the magnetic pole tip region, between the upper core layer and the lower core layer. An insulation layer is deposited on the lower core layer, and a groove that extends from the medium opposing surface toward the back region is provided in the magnetic pole tip region of the insulation layer. A lower magnetic pole layer, the gap layer, and an upper magnetic pole layer are deposited in the groove. The lower magnetic pole layer is joined to the lower core layer, while the upper magnetic pole layer is joined to the upper core layer.
    • 本发明提供一种具有1um或更小的记录磁道宽度的薄膜磁头,以及一种具有1μm或更小的记录磁道宽度的薄膜磁头的制造方法。 在薄膜磁头中,上芯层和下芯层从背部区域朝向磁极尖端区域延伸,并且在介质相对表面处露出,并且在磁极尖端区域中设置间隙层 ,在上芯层和下芯层之间。 绝缘层沉积在下芯层上,并且在绝缘层的磁极尖端区域中设置从介质相对表面朝向后部区域延伸的槽。 凹槽中沉积下磁极层,间隙层和上磁极层。 下磁极层接合到下芯层,而上磁极层与上芯层接合。
    • 19. 发明授权
    • Magnetoresistive magnetic head
    • 磁阻磁头
    • US5694275A
    • 1997-12-02
    • US508360
    • 1995-07-28
    • Toshinori WatanabeToshihiro Kuriyama
    • Toshinori WatanabeToshihiro Kuriyama
    • G11B5/39
    • G11B5/3932G11B5/399
    • In a magnetoresistive magnetic head having a laminate composed of a magnetoresistive (MR) layer showing the magnetoresistive effect, a SHUNT layer as a non-magnetic layer and a soft adjacent layer (SAL) for applying a transverse bias magnetic field to the MR layer, the MR layer and the SAL are made of the same Ni.sub.81 Fe.sub.19 magnetic film. Since the SAL is magnetically saturated in the same direction as the direction of leakage flux of a recording medium (y direction), permeability thereof in the y direction decreases, and the MR effect function therein can be restricted. Although the MR layer and the SAL have the same specific resistance .rho., a sufficient detection current can be made to flow through the MR layer and a high-precision magnetic detection output can be obtained by making the MR layer thicker than the SAL.
    • 在具有由表示磁阻效应的磁阻(MR)层构成的层叠体的磁阻磁头中,作为非磁性层的SHUNT层和向MR层施加横向偏置磁场的软相邻层(SAL) MR层和SAL由相同的Ni81Fe19磁性膜制成。 由于SAL在与记录介质的漏磁通方向相同的方向上是磁饱和的(y方向),所以在y方向上的磁导率减小,并且可以限制其中的MR效应函数。 虽然MR层和SAL具有相同的电阻rho,但是可以使足够的检测电流流过MR层,并且可以通过使MR层比SAL厚的厚度获得高精度的磁检测输出。
    • 20. 发明授权
    • Solid-state imaging device, signal charge detection device, and camera
    • 固态成像装置,信号充电检测装置和相机
    • US07671386B2
    • 2010-03-02
    • US11617173
    • 2006-12-28
    • Toshihiro Kuriyama
    • Toshihiro Kuriyama
    • H01L27/148
    • H01L27/14831H01L29/76816H01L2924/0002H01L2924/00
    • The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.
    • 本发明的固态成像装置包括:浮置扩散能量单元,其形成在半导体衬底上,并且可操作以保持源自入射光的信号电荷; 放大器,其可操作以将保持在所述浮动扩散容量单元中的信号电荷转换成电压; 将浮动扩散容量单元连接到放大器的输入端的第一线; 以及与第一线材相同的材料制成的第二线材,其形成在与第一线材相同的层中,至少沿着第一线材的长边布置在第一线材周围,并与第一线材电绝缘。