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11. 发明申请

US20060197428A1 Electron devices with non-evaporation-type getters and method for manufacturing the same 失效
公开(公告)号：US20060197428A1
公开(公告)日：2006-09-07
申请号：US11358638
申请日：2006-02-21
申请人： Takeshi Tonegawa , Shigeo Itoh , Sadanori Takayama , Masateru Taniguchi , Yasumoto Kubo , Kenji Nawamaki , Youhei Fujimura , Mamoru Namikawa , Yoshihisa Marushima , Osamu Idohara , Yoshiaki Inoue , Seiji Yokota , Kazuhiro Kawasaki
发明人： Takeshi Tonegawa , Shigeo Itoh , Sadanori Takayama , Masateru Taniguchi , Yasumoto Kubo , Kenji Nawamaki , Youhei Fujimura , Mamoru Namikawa , Yoshihisa Marushima , Osamu Idohara , Yoshiaki Inoue , Seiji Yokota , Kazuhiro Kawasaki
IPC分类号： H01J9/02
CPC分类号： H01J29/94 , H01J7/183 , H01J9/241 , Y10T428/31703
摘要： A non-evaporation getter material suitable for non-evaporation getters disposed in electron devices, such as fluorescent luminous tubes. The getter material is sized and shaped to more efficiently absorb gases actively at low temperatures.

12. 发明授权

US5786659A Field emission type electron source 失效
标题翻译：场发射型电子源
公开(公告)号：US5786659A
公开(公告)日：1998-07-28
申请号：US350027
申请日：1994-11-29
申请人： Toshinori Takagi , Masateru Taniguchi , Shigeo Itoh , Teruo Watanabe , Takahiro Niiyama
发明人： Toshinori Takagi , Masateru Taniguchi , Shigeo Itoh , Teruo Watanabe , Takahiro Niiyama
IPC分类号： H01J1/304 , H01J3/02 , H01J1/16
CPC分类号： H01J3/022 , H01J1/3042 , H01J2201/319
摘要： A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.
摘要翻译：能够使阴极配线和各个发射极锥体之间的电阻值设定在基本相同的水平并增加发射锥体的封装密度的场致发射型电子源。电子源包括布置在绝缘基板上的条状阴极布线。阴极布线各自形成有多个窗口，使得与阴极布线分离地形成彼此电阻值不同的多个岛状阴极导体和电阻层。然后，在其上形成电阻层，绝缘层和栅电极。栅极电极和绝缘层以其中布置发射极锥体的共同方式形成有孔，导致来自每个组单元的发射极锥体的电子发射均匀。

13. 发明授权

US07586260B2 Electron devices with non-evaporation-type getters and method for manufacturing the same 失效
标题翻译：具有非蒸发型吸气剂的电子器件及其制造方法
公开(公告)号：US07586260B2
公开(公告)日：2009-09-08
申请号：US11358638
申请日：2006-02-21
申请人： Takeshi Tonegawa , Shigeo Itoh , Sadanori Takayama , Masateru Taniguchi , Yasumoto Kubo , Kenji Nawamaki , Youhei Fujimura , Mamoru Namikawa , Yoshihisa Marushima , Osamu Idohara , Yoshiaki Inoue , Seiji Yokota , Kazuhiro Kawasaki
发明人： Takeshi Tonegawa , Shigeo Itoh , Sadanori Takayama , Masateru Taniguchi , Yasumoto Kubo , Kenji Nawamaki , Youhei Fujimura , Mamoru Namikawa , Yoshihisa Marushima , Osamu Idohara , Yoshiaki Inoue , Seiji Yokota , Kazuhiro Kawasaki
IPC分类号： H01J17/24 , H01J63/04 , H01J1/62
CPC分类号： H01J29/94 , H01J7/183 , H01J9/241 , Y10T428/31703
摘要： A non-evaporation getter material suitable for non-evaporation getters disposed in electron devices, such as fluorescent luminous tubes. The getter material is sized and shaped to more efficiently absorb gases actively at low temperatures.
摘要翻译：非蒸发吸气剂材料适用于设置在诸如荧光发光管的电子器件中的非蒸发吸气剂。吸气材料的尺寸和形状可以在低温下更有效地吸收气体。

14. 发明授权

US07375400B2 Field emission display device 失效
标题翻译：场致发射显示装置
公开(公告)号：US07375400B2
公开(公告)日：2008-05-20
申请号：US11593794
申请日：2006-11-07
申请人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
发明人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
IPC分类号： H01L29/06
CPC分类号： H01J31/127 , G09G3/2014 , G09G3/22 , G09G2300/0842 , G09G2360/144
摘要： An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emitters 16 connected to a cathode electrode 15, a gate electrode 13, an anode electrode 3, transistors Tr1 and Tr2, and a capacitor 12. A voltage applied to the capacitor 12 is varied to display an image. A constant voltage is applied to the gate electrode 13 to change a time ratio Du. Thus, the overall brightness of an image can be adjusted.
摘要翻译：提供一种图像显示装置，其中可以改变图像的整体亮度，而不会不利地影响色调和对比度。图像显示装置包括连接到阴极电极15，栅电极13，阳极电极3，晶体管Tr 1和Tr 2以及电容器12的发射极16。改变施加到电容器12的电压以显示图像。将恒定电压施加到栅电极13以改变时间比率Du。因此，可以调整图像的整体亮度。

15. 发明授权

US5633650A Flat-type fluorescent display device 失效
标题翻译：平板荧光显示装置
公开(公告)号：US5633650A
公开(公告)日：1997-05-27
申请号：US429468
申请日：1995-04-27
申请人： Takao Kishino , Shigeo Itoh , Tatsuo Yamaura , Teruo Watanabe , Kazuyoshi Ohtsu , Masateru Taniguchi
发明人： Takao Kishino , Shigeo Itoh , Tatsuo Yamaura , Teruo Watanabe , Kazuyoshi Ohtsu , Masateru Taniguchi
IPC分类号： H01J29/74 , G09F13/20 , H01J29/28 , H01J29/30 , H01J31/12 , H01J63/06 , G09G3/22
CPC分类号： B82Y10/00 , G09F13/20 , H01J31/123 , H01J31/127 , H01J2201/304
摘要： A flat-type fluorescent display device permitting luminous display to be observed through only a front glass cover while substantially increasing luminance. A front glass cover is provided on an inner surface thereof with FECs constituted by cathode lines, insulating layers, emitters and gate lines so as to define light-permeable sections between FECs. A substrate is formed opposite to the light-permeable sections with anodes constituted by anode-lines and phosphor layers. Electrons emitted from the FECs impinge on the anodes, leading to luminescence of the phosphor layer, which is then observed through the light-permeable sections of the front glass cover.
摘要翻译：一种平板型荧光显示装置，其允许仅通过前玻璃罩观察发光显示，同时显着提高亮度。在其内表面上设置有由阴极线，绝缘层，发射器和栅极线构成的FEC的前玻璃罩，以便在FEC之间限定透光部分。基板由与阳极线和荧光体层构成的阳极的光透射部相对地形成。从FEC发射的电子撞击阳极，导致荧光体层的发光，然后通过前玻璃罩的透光部分观察。

16. 发明授权

US5834885A Field emission cathode and method for manufacturing same 失效
标题翻译：场发射阴极及其制造方法
公开(公告)号：US5834885A
公开(公告)日：1998-11-10
申请号：US761134
申请日：1996-12-06
申请人： Shigeo Itoh , Teruo Watanabe , Kazuyoshi Ohtsu , Masateru Taniguchi
发明人： Shigeo Itoh , Teruo Watanabe , Kazuyoshi Ohtsu , Masateru Taniguchi
IPC分类号： H01J1/304 , H01J9/02 , H01J1/62
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/319
摘要： A field emission cathode which is capable of increasing bond strength between emitters and a resitive layer and a method for manufacturing the same which is capable of facilitating manufacturing of the cathode. The field emission cathode includes a laminated board, which includes a substrate, and at least a cathode electrode layer, a resitive layer, an insulating layer and a gate electrode layer which are deposited in the form of a film on the substrate in order. The gate electrode layer and insulating layer are formed with through-holes so as to commonly extend through the gate electrode layer and insulating layer. The cathode also includes buffer layers made of an insulating material and formed on portions of the resistive layer exposed via the through-holes, as well as emitters arranged on the buffer layers, respectively, resulting in bond strength between the resistive layer and the emitters being increased.
摘要翻译：能够提高发光体和光亮层之间的结合强度的场致发射阴极及其制造方法，其能够促进阴极的制造。场发射阴极包括层叠板，其包括基板，以及依次在基板上以膜的形式沉积的至少阴极电极层，重新层，绝缘层和栅极电极层。栅电极层和绝缘层形成有通孔，以通常延伸通过栅电极层和绝缘层。阴极还包括由绝缘材料制成并形成在通过通孔暴露的电阻层的部分上的缓冲层，以及分别布置在缓冲层上的发射体，导致电阻层和发射体之间的结合强度为增加。

17. 发明申请

US20070103085A1 Image display device 失效
标题翻译：图像显示装置
公开(公告)号：US20070103085A1
公开(公告)日：2007-05-10
申请号：US11593794
申请日：2006-11-07
申请人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
发明人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
IPC分类号： H01J29/96
CPC分类号： H01J31/127 , G09G3/2014 , G09G3/22 , G09G2300/0842 , G09G2360/144
摘要： An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emitters 16 connected to a cathode electrode 15, a gate electrode 13, an anode electrode 3, transistors Tr1 and Tr2, and a capacitor 12. A voltage applied to the capacitor 12 is varied to display an image. A constant voltage is applied to the gate electrode 13 to change a time ratio Du. Thus, the overall brightness of an image can be adjusted.
摘要翻译：提供一种图像显示装置，其中可以改变图像的整体亮度，而不会不利地影响色调和对比度。图像显示装置包括连接到阴极电极15，栅极电极13，阳极电极3，晶体管Tr 1和Tr 2以及电容器12的发射极16。施加到电容器12的电压被改变以显示图像。将恒定电压施加到栅电极13以改变时间比率Du。因此，可以调整图像的整体亮度。

18. 发明申请

US20050029922A1 Field emission element 失效
标题翻译：场发射元件
公开(公告)号：US20050029922A1
公开(公告)日：2005-02-10
申请号：US10900124
申请日：2004-07-28
申请人： Masateru Taniguchi , Manabu Kitada , Kazuhito Nakamura , Satoru Kawata
发明人： Masateru Taniguchi , Manabu Kitada , Kazuhito Nakamura , Satoru Kawata
IPC分类号： H01J29/04 , H01J1/02 , H01J1/304 , H01J1/62 , H01J31/12 , H01J63/04
CPC分类号： H01J1/3046 , H01J29/04 , H01J31/127 , H01J2201/30423
摘要： A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.
摘要翻译：场致发射元件具有层叠在基板上的栅电极，经由层间绝缘层堆叠在栅电极上的发射极，以及在与发射电极相对的另一基板上形成的阳极电极。此外，场发射元件包括由阳极电极和形成在其上的大致矩形的荧光体形成的阳极像素和多个阱，每个阱形成在狭长的细长孔的发射电极和层间绝缘层中。这里，阱设置在大致矩形的电子发射区域内，并且至少大部分阱彼此平行地布置，并且大部分阱的长度方向基本上与荧光体和电子的长度方向垂直发射区域。

19. 发明授权

US07067971B2 Field emission element 失效
标题翻译：场发射元件
公开(公告)号：US07067971B2
公开(公告)日：2006-06-27
申请号：US10900124
申请日：2004-07-28
申请人： Masateru Taniguchi , Manabu Kitada , Kazuhito Nakamura , Satoru Kawata
发明人： Masateru Taniguchi , Manabu Kitada , Kazuhito Nakamura , Satoru Kawata
IPC分类号： H01J1/62
CPC分类号： H01J1/3046 , H01J29/04 , H01J31/127 , H01J2201/30423
摘要： A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.
摘要翻译：场致发射元件具有层叠在基板上的栅电极，经由层间绝缘层堆叠在栅电极上的发射极，以及在与发射电极相对的另一基板上形成的阳极电极。此外，场发射元件包括由阳极电极和形成在其上的大致矩形的荧光体形成的阳极像素和多个阱，每个阱形成在狭长的细长孔的发射电极和层间绝缘层中。这里，阱设置在大致矩形的电子发射区域内，并且至少大部分阱彼此平行地布置，并且大部分阱的长度方向基本上与荧光体和电子的长度方向垂直发射区域。

20. 发明授权

US08288762B2 Organic field effect transistor and its production method 有权
标题翻译：有机场效应晶体管及其制作方法
公开(公告)号：US08288762B2
公开(公告)日：2012-10-16
申请号：US12551205
申请日：2009-08-31
申请人： Masateru Taniguchi , Tomoji Kawai , Hideyuki Kawaguchi , Ikuo Fukui
发明人： Masateru Taniguchi , Tomoji Kawai , Hideyuki Kawaguchi , Ikuo Fukui
IPC分类号： H01L35/24
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/004 , H01L51/0043 , H01L51/0545
摘要： An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2═CHCOO—(CH2)2—CN (1) and/or a monomer represented by the formula (2): CH2═C(CH3)COO—(CH2)2—CN (2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.
摘要翻译：提供具有导体层/绝缘体层/半导体层的结构的有机场效应晶体管（OFET）。该OFET包括通过将由式（1）表示的单体：CH2 = CHCOO-（CH2）2-CN（1）表示的单体和/或由式（1）表示的单体 2）：CH 2 = C（CH 3）COO-（CH 2）2 -CN（2）与除式（1）或（2）表示的单体之外的可聚合和/或可交联的有机化合物; 以及包含有机化合物的半导体层。

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