专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20110147822A1 Semiconductor memory device and method for manufacturing the same 审中-公开
公开(公告)号：US20110147822A1
公开(公告)日：2011-06-23
申请号：US12929894
申请日：2011-02-23
申请人： Kenji Aoyama , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
发明人： Kenji Aoyama , Eiji Ito , Masahiro Kiyotoshi , Tadashi Iguchi , Moto Yabuki
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/764 , H01L29/40114 , H01L29/66825
摘要： A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity.

12. 发明申请

US20100171164A1 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100171164A1
公开(公告)日：2010-07-08
申请号：US12659703
申请日：2010-03-17
申请人： Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
发明人： Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
IPC分类号： H01L27/115 , H01L29/788
CPC分类号： H01L27/115 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.
摘要翻译：一种非易失性半导体存储器件，包括具有半导体层和设置在其表面上的绝缘材料的半导体衬底，绝缘材料的表面被半导体层覆盖，并且设置在半导体层上的多个存储单元，存储器电池包括通过覆盖半导体层的表面而提供的第一电介质膜，设置在绝缘材料上方和第一电介质膜上的多个电荷存储层，设置在每个电荷存储层上的多个第二电介质膜，多个设置在每个第二电介质膜上的导电层，以及杂质扩散层，其部分或整体形成在绝缘材料的至少上方和半导体层的内部，并且其底端的至少一部分由绝缘体的上表面材料。

13. 发明授权

US07538047B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07538047B2
公开(公告)日：2009-05-26
申请号：US11451519
申请日：2006-06-13
申请人： Atsuko Kawasaki , Takeshi Hoshi , Masahiro Kiyotoshi , Takatoshi Ono , Yoshihiro Ogawa , Kaori Umezawa
发明人： Atsuko Kawasaki , Takeshi Hoshi , Masahiro Kiyotoshi , Takatoshi Ono , Yoshihiro Ogawa , Kaori Umezawa
IPC分类号： H01L21/469
CPC分类号： H01L21/76229 , H01L21/76224
摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.
摘要翻译：一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜，含有蒸汽或纯水的气氛。

14. 发明授权

US07514338B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07514338B2
公开(公告)日：2009-04-07
申请号：US11544747
申请日：2006-10-10
申请人： Osamu Arisumi , Masahiro Kiyotoshi
发明人： Osamu Arisumi , Masahiro Kiyotoshi
IPC分类号： H01L21/76
CPC分类号： H01L27/11524 , H01L27/115 , H01L27/11521
摘要： A method of manufacturing a semiconductor device, includes preparing a work piece having a trench on its main surface side, forming a polymer film containing a polymer containing silicon, hydrogen and nitrogen on the main surface of the work piece, holding the work piece with the polymer film in a first atmosphere, which contains oxygen, and whose oxygen partial pressure is set in a range of 16 to 48 Torr, oxidizing the polymer film in a second atmosphere containing water vapor to form an oxide film containing a silicon oxide as a main component, after holding the work piece in the first atmosphere, and removing an upper portion of the oxide film to remain a lower portion of the oxide film in the trench.
摘要翻译：一种制造半导体器件的方法，包括在其主表面侧准备具有沟槽的工件，在工件的主表面上形成含有含有硅，氢和氮的聚合物的聚合物膜，将工件与聚合物膜在含有氧的第一气氛中，其氧分压设定在16〜48托的范围内，在含有水蒸气的第二气氛中氧化聚合物膜，形成含有氧化硅为主要的氧化膜在第一气氛中保持工件之后，除去氧化膜的上部以保留在沟槽中的氧化膜的下部。

15. 发明授权

US07071107B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07071107B2
公开(公告)日：2006-07-04
申请号：US10674382
申请日：2003-10-01
申请人： Katsuhiko Hieda , Atsuko Kawasaki , Masahiro Kiyotoshi , Katsuhiko Tachibana , Soichi Yamazaki
发明人： Katsuhiko Hieda , Atsuko Kawasaki , Masahiro Kiyotoshi , Katsuhiko Tachibana , Soichi Yamazaki
IPC分类号： H01L21/302
CPC分类号： H01L21/02222 , H01L21/02164 , H01L21/02282 , H01L21/02304 , H01L21/02318 , H01L21/02337 , H01L21/31111 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/31683 , H01L21/76224 , H01L21/76229
摘要： There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.
摘要翻译：公开了一种制造半导体器件的方法，其中在硅衬底的表面上形成Si 3 N 4 N 4膜作为掩模构件，然后蚀刻形成一个STI沟槽。将过氢化硅氮烷聚合物的溶液涂布在其上形成有STI沟槽的硅衬底的表面上，以在其上沉积涂膜（PSZ膜）。去除沉积在掩模构件上的PSZ膜，使PSZ膜的一部分留在沟槽内，其中控制PSZ膜的厚度使其从STI沟槽底部的高度变为600nm以下。然后，在含水蒸汽的气氛中对PSZ膜进行热处理，通过PSZ膜的化学反应将PSZ膜转换为氧化硅膜。随后，对氧化硅膜进行热处理以使氧化硅膜致密化。

16. 发明授权

US5686151A Method of forming a metal oxide film 失效
标题翻译：形成金属氧化膜的方法
公开(公告)号：US5686151A
公开(公告)日：1997-11-11
申请号：US603198
申请日：1996-02-20
申请人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
发明人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
IPC分类号： C23C16/40 , H01L21/8242 , H01L21/8246 , B05D3/06 , C23C16/00
CPC分类号： C23C16/408 , H01L27/11502 , H01L27/11507 , Y10S505/734
摘要： Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.
摘要翻译：公开了形成金属氧化物膜的方法，包括以下步骤：将含有选自碳和卤素元素的至少一种元素的金属化合物的气体引入容纳基板的处理室中，引入含有具有羟基的化合物进入处理室，将已经转化为等离子体状态的含氧气体引入处理室，并使用含有金属化合物的气体在基板上形成金属氧化物膜，该气体含有具有羟基的化合物和已经转化为等离子体状态的含氧气体。

17. 发明授权

US08779499B2 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08779499B2
公开(公告)日：2014-07-15
申请号：US13352693
申请日：2012-01-18
申请人： Masahiro Kiyotoshi
发明人： Masahiro Kiyotoshi
IPC分类号： H01L29/788
CPC分类号： H01L27/11556 , H01L27/11524 , H01L29/7889
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes sheet-like memory strings arranged in a matrix shape substantially perpendicularly to a substrate. A control gate electrode film includes a common connecting section that extends in a first direction and an electrode forming section that is provided for each of memory cells above or below a floating gate electrode film via an inter-electrode dielectric film to project from the common connecting section in a second direction. The floating gate electrode film extends in the second direction and is formed on a first principal plane of a sheet-like semiconductor film via a tunnel dielectric film.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括基本上垂直于衬底排列成矩阵形状的片状存储器串。控制栅极电极膜包括沿着第一方向延伸的公共连接部分和电极形成部分，该电极形成部分经由电极间电介质膜设置用于通过电极间电介质膜从共同连接突出的浮置电极膜上方或下方的每个存储器单元在第二个方向。浮栅电极膜沿第二方向延伸，并通过隧道电介质膜形成在片状半导体膜的第一主平面上。

18. 发明授权

US08748965B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US08748965B2
公开(公告)日：2014-06-10
申请号：US13197263
申请日：2011-08-03
申请人： Satoshi Nagashima , Junya Fujita , Hideyuki Yamawaki , Masahiro Kiyotoshi , Hisataka Meguro
发明人： Satoshi Nagashima , Junya Fujita , Hideyuki Yamawaki , Masahiro Kiyotoshi , Hisataka Meguro
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/11526 , H01L27/11529 , H01L29/42324
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell transistor obtained by sequentially stacking the gate insulation film, the floating gate electrode, the interelectrode insulation film, and the control gate electrode over the channel semiconductor layer. The control gate electrode has a structure obtained by sequentially stacking the semiconductor film, the silicide phase-change suppressing layer, and the silicide film. In addition, the silicide phase-change suppressing layer includes a polycrystalline silicon film in which at least one of C, F, and N is doped in a concentration range of 1×1020 to 5×1021 [atom/cm3].
摘要翻译：根据一个实施例，非易失性半导体存储器件包括通过在沟道半导体层上依次层叠栅绝缘膜，浮栅电极，电极间绝缘膜和控制栅电极而获得的存储单元晶体管。控制栅电极具有通过顺序堆叠半导体膜，硅化物相变抑制层和硅化物膜而获得的结构。此外，硅化物相变抑制层包括在1×1020〜5×1021 [原子/ cm3]的浓度范围内掺杂有C，F和N中的至少一种的多晶硅膜。

19. 发明授权

US08435857B2 Method for manufacturing semiconductor memory device 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US08435857B2
公开(公告)日：2013-05-07
申请号：US13218868
申请日：2011-08-26
申请人： Masahiro Kiyotoshi
发明人： Masahiro Kiyotoshi
IPC分类号： H01L21/8247
CPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L29/7926
摘要： According to one embodiment, a method for manufacturing a semiconductor memory device, includes forming a stacked body on a substrate by alternately stacking a first insulating film and a second insulating film, making a through-hole extending in a stacking direction of the first insulating film and the second insulating film to pierce the stacked body, forming at least a portion of a blocking insulating film, a charge trap film, and a tunneling dielectric film of a MONOS on an inner surface of the through-hole, forming a channel semiconductor on the tunneling dielectric film, making a trench in the stacked body, removing the second insulating film by performing etching via the trench, and filling a conductive material into a space made by the removing of the second insulating film.
摘要翻译：根据一个实施例，一种用于制造半导体存储器件的方法包括：通过交替堆叠第一绝缘膜和第二绝缘膜，在衬底上形成层叠体，形成沿着第一绝缘膜的层叠方向延伸的通孔并且第二绝缘膜刺穿层叠体，在通孔的内表面上形成MONOS的阻挡绝缘膜，电荷阱膜和隧道电介质膜的至少一部分，在通孔的内表面上形成沟道半导体所述隧道电介质膜在所述层叠体中形成沟槽，通过经由所述沟槽进行蚀刻来除去所述第二绝缘膜，并且将导电材料填充到通过去除所述第二绝缘膜而形成的空间中。

20. 发明授权

US08178875B2 Nonvolatile memory device and method for manufacturing same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08178875B2
公开(公告)日：2012-05-15
申请号：US12435115
申请日：2009-05-04
申请人： Masahiro Kiyotoshi
发明人： Masahiro Kiyotoshi
IPC分类号： H01L29/06
CPC分类号： H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/1675
摘要： A nonvolatile memory device includes a plurality of component memory layers stacked on one another. Each of the plurality of component memory layers includes a first wiring, a second wiring provided non-parallel to the first wiring, and a stacked structure unit provided between the first wiring and the second wiring. The stacked structure unit has a memory layer and a rectifying element. The rectifying element has a Schottky junction formed on an interface between an electrode and an oxide semiconductor. The electrode includes a metal and the oxide semiconductor includes a metal.
摘要翻译：非易失性存储器件包括彼此堆叠的多个部件存储器层。多个分量存储层中的每一个包括第一布线，与第一布线不平行的第二布线，以及设置在第一布线和第二布线之间的层叠结构单元。堆叠结构单元具有存储层和整流元件。整流元件在电极和氧化物半导体之间的界面上形成有肖特基结。电极包括金属，氧化物半导体包括金属。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式