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11. 发明申请

US20130282958A1 Obsolete Block Management for Data Retention in Nonvolatile Memory 有权
标题翻译：非易失性存储器中数据保留的过时块管理
公开(公告)号：US20130282958A1
公开(公告)日：2013-10-24
申请号：US13453898
申请日：2012-04-23
申请人： Zac Shepard , Steven T. Sprouse , Chris Nga Yee Avila , Neil David Hutchison
发明人： Zac Shepard , Steven T. Sprouse , Chris Nga Yee Avila , Neil David Hutchison
IPC分类号： G06F12/00
CPC分类号： G06F12/0238 , G06F12/0246 , G11C5/005 , G11C11/5628 , G11C16/10 , G11C16/349
摘要： In a nonvolatile memory array, blocks that contain only obsolete data are modified by adding charge to their cells, increasing the charge level from the programmed charge levels that represented obsolete data to elevated charge levels. The increase in overall charge in such blocks lessens the tendency of such blocks to impact data retention in neighboring blocks.
摘要翻译：在非易失性存储器阵列中，仅包含过时数据的块通过向其单元添加电荷来修改，从将代表过时数据的程序化电荷电平增加到升高的电荷电平。这些块中的总体电荷的增加减少了这种块在相邻块中影响数据保留的趋势。

12. 发明申请

US20110161560A1 ERASE COMMAND CACHING TO IMPROVE ERASE PERFORMANCE ON FLASH MEMORY 审中-公开
标题翻译：删除命令缓存以提高闪速存储器的擦除性能
公开(公告)号：US20110161560A1
公开(公告)日：2011-06-30
申请号：US12651176
申请日：2009-12-31
申请人： Neil D. Hutchison , Alan D. Bennett , Sergey A. Gorobets , Steven T. Sprouse
发明人： Neil D. Hutchison , Alan D. Bennett , Sergey A. Gorobets , Steven T. Sprouse
IPC分类号： G06F12/02 , G06F12/10 , G06F17/30
CPC分类号： G06F12/0246 , G06F2212/1016 , G06F2212/7205 , G06F2212/7208
摘要： Systems and methods are disclosed to reduce the number of partial logical groups that are erased by writing erase patterns to memory in a non-volatile memory system. When a non-aligned erase command is received, the logical addresses of data associated with the erase command may be marked as erased. If the logical group corresponds to the size of a physical metablock, the controller may also issue a physical erase command for complete logical groups within the erase command. For those parts of the erase command that encompass only partial logical groups, the ranges of the logical block addresses marked for erasure are stored. As subsequent erase commands are received the address ranges of the erase commands are added to the previously stored address ranges. When a set of erase commands spans an entire logical group, the logical group is marked for physical erasure in its entirety.
摘要翻译：公开了系统和方法，以通过将擦除模式写入非易失性存储器系统中的存储器来减少擦除的部分逻辑组的数量。当接收到不对准的擦除命令时，可以将与擦除命令相关联的数据的逻辑地址标记为擦除。如果逻辑组对应于物理元区块的大小，则控制器还可以对擦除命令内的完整逻辑组发出物理擦除命令。对于仅包含部分逻辑组的擦除命令的那些部分，存储标记为擦除的逻辑块地址的范围。随着接下来的擦除命令被接收，擦除命令的地址范围被添加到先前存储的地址范围。当一组擦除命令跨越整个逻辑组时，逻辑组被整体标记为物理擦除。

13. 发明授权

US07697325B2 Non-volatile memory cell endurance using data encoding 有权
标题翻译：使用数据编码的非易失性存储单元耐久性
公开(公告)号：US07697325B2
公开(公告)日：2010-04-13
申请号：US11903764
申请日：2007-09-24
申请人： Steven T. Sprouse , Dhaval Parikh , Sukhminder S. Lobana , Shai Traister
发明人： Steven T. Sprouse , Dhaval Parikh , Sukhminder S. Lobana , Shai Traister
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C7/1006
摘要： A method and apparatus for storing an n-bit (for n>=2) data block in an array of non-volatile memory cells utilizes a predetermined n+k-bit (for k>=1) encoding selected to reduce the number of programmed cells required to store the n-bit data block.
摘要翻译：用于在非易失性存储器单元阵列中存储n位（对于n> = 2）数据块的方法和装置利用所选择的编码的预定n + k位（对于k> = 1）来减少编号存储n位数据块所需的编程单元。

14. 发明授权

US07564696B1 PCI bracket retainer for adapter card applications 有权
标题翻译：用于适配卡应用的PCI支架保持架
公开(公告)号：US07564696B1
公开(公告)日：2009-07-21
申请号：US11366844
申请日：2006-03-01
申请人： Alan L. Winick , Michael T. Milo , Steven T. Sprouse
发明人： Alan L. Winick , Michael T. Milo , Steven T. Sprouse
IPC分类号： H05K7/12
CPC分类号： G06F1/186
摘要： A bracket retainer is provided for securing an adapter card in a computer chassis in manner that maintains the electrical and the mechanical stability of the computer chassis and adapter card. This bracket retainer approach secures the adapter card to the computer chassis by utilizing a rotating door structure that allows the adapter card to be tightened into its card connector, as a rear tab of the adapter card, which is protruding through an opening of a rear panel of the computer chassis, is engaged by the rotating door structure. This bracket retainer approach also allows the bracket retainer to be secured to the computer chassis by interlocking the door structure with a top cover of the computer chassis.
摘要翻译：提供了一种支架保持器，用于将适配器卡固定在计算机机箱中，以保持计算机机箱和适配器卡的电气和机械稳定性。该支架固定器方法通过利用旋转门结构将适配器卡固定到计算机机箱，该旋转门结构允许将适配器卡紧固到其卡连接器中，作为适配器卡的后突出部，其通过后面板的开口突出的计算机机箱，由旋转门结构接合。该支架固定器方法还允许支架保持器通过将门结构与计算机机箱的顶盖互锁而固定到计算机机箱。

15. 发明授权

US06794997B2 Extending non-volatile memory endurance using data encoding 有权
标题翻译：使用数据编码扩展非易失性存储器耐久性
公开(公告)号：US06794997B2
公开(公告)日：2004-09-21
申请号：US10370413
申请日：2003-02-18
申请人： Steven T. Sprouse
发明人： Steven T. Sprouse
IPC分类号： H03M700
CPC分类号： H03M7/22 , G11C16/3495 , H03K21/403 , H03M7/16
摘要： An embedded system comprising a CPU and non-volatile memory is adapted to extend the endurance of the non-volatile memory through the use of an encoding of information stored in the non-volatile memory. One or more data bits are encoded into a larger number of non-volatile memory bit patterns such that changes to the data bits are distributed across fewer changes per non-volatile memory bit. Non-volatile memory endurance is extended since more changes to the data values are possible than can be supported by underlying changes to individual non-volatile memory bits. Word pre-erase, if present, can be accommodated as well as memory bit failures.
摘要翻译：包括CPU和非易失性存储器的嵌入式系统适于通过使用存储在非易失性存储器中的信息的编码来延长非易失性存储器的耐久性。一个或多个数据位被编码成更大数量的非易失性存储器位模式，使得对数据位的改变分布在每个非易失性存储器位更少的变化。非易失性存储器耐久性被扩展，因为数据值的更多变化可能比单个非易失性存储器位的底层变化可以支持。字预擦除（如果存在）可以适应以及存储器位故障。

16. 发明授权

US08688940B2 Method for using a CAPTCHA challenge to protect a removable mobile flash memory storage device 有权
标题翻译：使用CAPTCHA挑战来保护可移动的移动闪存存储设备的方法
公开(公告)号：US08688940B2
公开(公告)日：2014-04-01
申请号：US12338696
申请日：2008-12-18
申请人： Steven T. Sprouse , Carlos J. Gonzalez , Ron Barzilai , Dhaval Parikh
发明人： Steven T. Sprouse , Carlos J. Gonzalez , Ron Barzilai , Dhaval Parikh
IPC分类号： G06F12/00
CPC分类号： G06F21/79 , G06F21/36 , G06F2221/2133
摘要： The embodiments described herein generally use a challenge to protect a removable mobile flash memory storage device, where the challenge may be in the form of a “Completely Automated Public Turing Test to Tell Computers and Humans Apart” (“CAPTCHA”). In one embodiment, a method is provided in which a removable mobile flash memory storage device receives a command from a host device, generates a CAPTCHA challenge, provides the CAPTCHA challenge to the host device, receives a response to the CAPTCHA challenge from the host device, determines if the response satisfies the CAPTCHA challenge, and performs the command only if the response satisfies the CAPTCHA challenge. In another embodiment, a removable mobile flash memory storage device is provided for performing these acts.
摘要翻译：本文描述的实施例通常使用保护可移动的移动闪存存储设备的挑战，其中挑战可以是“完全自动公共图灵测试以告知计算机和人类之外”（“CAPTCHA”）的形式。在一个实施例中，提供了一种方法，其中可移除的移动闪存存储设备从主机设备接收命令，生成CAPTCHA挑战，向主机设备提供CAPTCHA挑战，从主机设备接收对CAPTCHA挑战的响应，确定响应是否满足CAPTCHA挑战，并且仅当响应满足CAPTCHA挑战时才执行命令。在另一个实施例中，提供了用于执行这些动作的可拆卸移动闪存存储设备。

17. 发明授权

US07599241B2 Enhanced write abort mechanism for non-volatile memory 有权
标题翻译：用于非易失性存储器的增强写入中止机制
公开(公告)号：US07599241B2
公开(公告)日：2009-10-06
申请号：US11890734
申请日：2007-08-06
申请人： Steven T. Sprouse , Dhaval Parikh , Arjun Kapoor
发明人： Steven T. Sprouse , Dhaval Parikh , Arjun Kapoor
IPC分类号： G11C5/14
CPC分类号： G11C16/225
摘要： In a non-volatile memory (NVM) device having a controller and a non-volatile memory array controlled by the controller a voltage supervisor circuit monitors an output of a voltage supply powering the NVM device. The voltage supervisor circuit may be part of the NVM device or coupled to it. The voltage supervisor circuit is configured to assert a “low-voltage” signal responsive to detecting the output of the voltage supply powering the NVM device dropping below a predetermined value. The controller is configured to write data into the memory array while the “low-voltage” signal is deasserted and to suspend writing data while the “low-voltage” signal is asserted. In response to assertion of the “low-voltage” signal, the controller completes a write cycle/program operation, if pending, and prevents any additional write cycles/program operation(s) during assertion of the “low-voltage” signal.
摘要翻译：在具有由控制器控制的控制器和非易失性存储器阵列的非易失性存储器（NVM）器件中，电压监控器电路监视为NVM器件供电的电压源的输出。电压监控器电路可以是NVM器件的一部分或耦合到其上。电压监控器电路被配置为响应于检测到NVM器件供电的电压输出下降到预定值以下来断言“低电压”信号。控制器被配置为在“低电压”信号被断言时将数据写入存储器阵列，并且在“低电压”信号被断言时暂停写入数据。响应于“低电压”信号的声明，控制器完成写入周期/编程操作，如果挂起，并且在断言“低电压”信号期间防止任何额外的写周期/编程操作。

18. 发明申请

US20090085221A1 Multi-host interface controller with USB PHY/analog functions integrated in a single package 有权
标题翻译：具有USB PHY /模拟功能的多主机接口控制器集成在单个封装中
公开(公告)号：US20090085221A1
公开(公告)日：2009-04-02
申请号：US11906582
申请日：2007-10-02
申请人： Steven T. Sprouse , Dhaval Parikh , Michael McCarthy
发明人： Steven T. Sprouse , Dhaval Parikh , Michael McCarthy
IPC分类号： H01L23/52 , H01L21/00
CPC分类号： H01L25/18 , H01L25/0657 , H01L2224/32145 , H01L2224/48091 , H01L2225/0651 , H01L2924/00014
摘要： In a first embodiment, an apparatus and a method of fabrication thereof includes a substrate, a controller formed on a first integrated circuit (IC) die and disposed on the substrate, a second IC die embodying circuitry configured to enable communication between the controller and an external device, first I/O pads disposed on the first IC die, second I/O pads disposed on the second IC die, wire bonding interconnections coupling at least one of the first I/O pads with at least one of the second I/O pads, and a memory array formed on a third IC die and configured to enable communication with the controller. In a second embodiment the memory array is alternatively integrated into the first IC die.
摘要翻译：在第一实施例中，一种装置及其制造方法包括：衬底，形成在第一集成电路（IC）管芯上并设置在衬底上的控制器;控制器，被配置为使能控制器与控制器之间的通信; 外部设备，设置在第一IC裸片上的第一I / O焊盘，设置在第二IC裸片上的第二I / O焊盘，将至少一个第一I / O焊盘与至少一个第二I / O焊盘和形成在第三IC裸片上并被配置为实现与控制器的通信的存储器阵列。在第二实施例中，存储器阵列可选地集成到第一IC芯片中。

19. 发明申请

US20090080249A1 Non-volatile memory cell endurance using data encoding 有权
标题翻译：使用数据编码的非易失性存储单元耐久性
公开(公告)号：US20090080249A1
公开(公告)日：2009-03-26
申请号：US11903764
申请日：2007-09-24
申请人： Steven T. Sprouse , Dhaval Parikh , Sukhminder S. Lobana , Shai Traister
发明人： Steven T. Sprouse , Dhaval Parikh , Sukhminder S. Lobana , Shai Traister
IPC分类号： G11C16/06
CPC分类号： G11C11/5628 , G11C7/1006
摘要： A method and apparatus for storing an n-bit (for n>=2) data block in an array of non-volatile memory cells utilizes a predetermined n+k-bit (for k>=1) encoding selected to reduce the number of programmed cells required to store the n-bit data block.
摘要翻译：用于在非易失性存储器单元的阵列中存储n位（对于n> = 2）数据块的方法和装置利用所选择的编码的预定n + k位（对于k> = 1）来减少编号存储n位数据块所需的编程单元。

20. 发明授权

US08732391B2 Obsolete block management for data retention in nonvolatile memory 有权
标题翻译：用于非易失性存储器中数据保留的过时块管理
公开(公告)号：US08732391B2
公开(公告)日：2014-05-20
申请号：US13453898
申请日：2012-04-23
申请人： Zac Shepard , Steven T. Sprouse , Chris Nga Yee Avila , Neil David Hutchison
发明人： Zac Shepard , Steven T. Sprouse , Chris Nga Yee Avila , Neil David Hutchison
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0238 , G06F12/0246 , G11C5/005 , G11C11/5628 , G11C16/10 , G11C16/349
摘要： In a nonvolatile memory array, blocks that contain only obsolete data are modified by adding charge to their cells, increasing the charge level from the programmed charge levels that represented obsolete data to elevated charge levels. The increase in overall charge in such blocks lessens the tendency of such blocks to impact data retention in neighboring blocks.
摘要翻译：在非易失性存储器阵列中，仅包含过时数据的块通过向其单元添加电荷来修改，从将代表过时数据的程序化电荷电平增加到升高的电荷电平。这些块中的总体电荷的增加减少了这种块在相邻块中影响数据保留的趋势。

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