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11. 发明申请

US20060091108A1 Method and apparatus for controlling etch processes during fabrication of semiconductor devices 失效
公开(公告)号：US20060091108A1
公开(公告)日：2006-05-04
申请号：US11263780
申请日：2005-10-31
申请人： David Mui , Wei Liu , Hiroki Sasano
发明人： David Mui , Wei Liu , Hiroki Sasano
IPC分类号： G01L21/30 , B44C1/22 , C23F1/00
CPC分类号： G03F7/70625 , H01L21/67207 , H01L21/67253 , H01L22/20
摘要： A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such a method.

12. 发明申请

US20050165987A1 Systems and methods for bandwidth shaping 有权
标题翻译：带宽整形的系统和方法
公开(公告)号：US20050165987A1
公开(公告)日：2005-07-28
申请号：US10764626
申请日：2004-01-26
申请人： Shigehiro Asano , Peichun Liu , David Mui
发明人： Shigehiro Asano , Peichun Liu , David Mui
IPC分类号： G06F13/362 , G06F13/14 , G06F13/36
CPC分类号： G06F13/3625
摘要： Systems and methods for controlling access by a set of agents to a resource, where the agents have corresponding priorities associated with them, and where a monitor associated with the resource controls accesses by the agents to the resource based on the priorities. One embodiment is implemented in a computer system having multiple processors that are connected to a processor bus. The processor bus includes a shaping monitor configured to control access by the processors to the bus. The shaping monitor attempts to distribute the accesses from each of the processors throughout a base period according to priorities assigned to the processors. The shaping monitor allocates slots to the processors in accordance with their relative priorities. Priorities are initially assigned according to the respective bandwidth needs of the processors, but may be modified based upon comparisons of actual to expected accesses to the bus.
摘要翻译：用于控制一组代理对资源的访问的系统和方法，其中代理具有与其相关联的相应优先级，以及与资源控制相关联的监视器，以及由代理基于优先级访问资源的位置。一个实施例在具有连接到处理器总线的多个处理器的计算机系统中实现。处理器总线包括整形监视器，其被配置为控制处理器对总线的访问。整形监视器根据分配给处理器的优先级，尝试在整个基期内分配来自每个处理器的访问。整形监视器根据其相对优先级向处理器分配插槽。首先根据处理器的各自的带宽需求分配优先级，但是可以基于对总线的实际访问和期望访问的比较来修改优先级。

13. 发明授权

US08968485B2 Apparatus and methods for processing a substrate 有权
标题翻译：用于处理衬底的装置和方法
公开(公告)号：US08968485B2
公开(公告)日：2015-03-03
申请号：US13251064
申请日：2011-09-30
申请人： Arjun Mendiratta , Cheng-Yu Lin , David Mui
发明人： Arjun Mendiratta , Cheng-Yu Lin , David Mui
IPC分类号： B08B3/00 , B08B1/02 , B08B3/04 , H01L21/02 , H01L21/67
CPC分类号： B08B1/02 , B08B3/04 , H01L21/02065 , H01L21/02074 , H01L21/6704 , H01L21/67051
摘要： An apparatus for processing a substrate, comprising: a process chamber having a track; a carrier connected to the track; upper and lower proximity heads in the chamber and positioned along the path, the proximity heads having opposing faces that define a gap in which a meniscus of fluid is formed, the path being defined along the gap between the opposing faces; a first pre-wet dispenser and a second pre-wet dispenser disposed along side of the upper proximity head and directed toward the path; a drive for moving each of the pre-wet dispensers between a center position along the length of the upper proximity head and opposite outer positions near outer ends of the upper proximity head; and a pre-wet controller for causing the drive to move each of the first and second pre-wet dispensers based on a position of the carrier when moved under the first and second pre-wet dispensers.
摘要翻译：一种用于处理衬底的设备，包括：具有轨道的处理室; 连接到轨道的载体; 所述腔室中的上和下邻近头部沿所述路径定位，所述邻近头部具有限定形成有液体弯液面的间隙的相对面，所述路径沿着相对面之间的间隙限定; 第一预湿式分配器和第二预湿式分配器，其设置在上接近头部的侧面并且朝向路径; 驱动器，用于在沿着上邻近头部的长度的中心位置和靠近上接近头部的外端的相对的外部位置之间移动每个预湿式分配器; 以及预湿式控制器，用于当所述第一和第二预湿式分配器下移动时，使得所述驱动器基于所述载体的位置移动所述第一和第二预湿式分配器中的每一个。

14. 发明授权

US08480809B2 Methods for application of two-phase contaminant removal medium 有权
标题翻译：两相污染物去除介质的应用方法
公开(公告)号：US08480809B2
公开(公告)日：2013-07-09
申请号：US13351217
申请日：2012-01-16
申请人： Ji Zhu , Arjun Mendiratta , David Mui
发明人： Ji Zhu , Arjun Mendiratta , David Mui
IPC分类号： B08B3/00 , C11D11/00
CPC分类号： B08B3/02 , C11D3/2079 , C11D3/222 , C11D3/37 , C11D3/3707 , C11D3/3723 , C11D3/3753 , C11D3/3765 , C11D3/3773 , C11D3/378 , C11D3/43 , C11D7/265 , C11D7/268 , C11D7/5004 , C11D11/0047 , C11D17/0013 , C11D17/003 , Y10S134/902
摘要： A method is provided for receiving the wafer on a support, the support being configured for movement along a direction. While moving the wafer, dispensing a cleaning material to clean contaminants from the surface of the wafer, the dispensing applied as a film over a diameter length of the wafer. The cleaning material contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound. Each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, and wherein the polymers become soluble in the cleaning liquid and the solubilized polymers having long polymer chains that capture and entrap solid components and contaminants in the cleaning liquid. Then, rinsing the film off of the wafer with a rinsing meniscus. The rinsing meniscus applied along the diameter length of the wafer and the film is rinsed after the dispensing.
摘要翻译：提供了一种用于在支撑件上接收晶片的方法，所述支撑件被配置为沿着方向移动。在移动晶片时，分配清洁材料以清洁来自晶片表面的污染物，分配作为薄膜施加在晶片的直径长度上。清洁材料包含清洁液体，多种固体组分和聚合物的聚合物。多个固体组分和聚合物中的每一种都大于零且小于洗涤材料的3％，并且其中聚合物变得可溶于清洁液体，并且具有长的聚合物链的溶解聚合物捕获并捕获固体组分和污染物清洗液。然后，用冲洗弯液面从晶片上冲洗薄膜。沿着晶片的直径长度施加的冲洗弯月面，并且在分配之后冲洗薄膜。

15. 发明申请

US20120159125A1 EFFICIENCY OF SHORT LOOP INSTRUCTION FETCH 有权
标题翻译：短环指导效率的效率
公开(公告)号：US20120159125A1
公开(公告)日：2012-06-21
申请号：US13408739
申请日：2012-02-29
申请人： Ronald D. Hall , Michael L. Karm , Brian R. Mestan , David Mui
发明人： Ronald D. Hall , Michael L. Karm , Brian R. Mestan , David Mui
IPC分类号： G06F9/38 , G06F9/312
CPC分类号： G06F9/3802 , G06F1/3234 , G06F9/30189 , G06F9/30196 , G06F9/325 , G06F9/381 , G06F9/3814 , G06F9/3836 , G06F9/3851 , G06F12/0875 , G06F2212/452
摘要： A method, system and computer program product for instruction fetching within a processor instruction unit, utilizing a loop buffer, one or more virtual loop buffers, and/or an instruction buffer. During instruction fetch, modified instruction buffers coupled to an instruction cache (I-cache) temporarily store instructions from a single branch, backwards short loop. The modified instruction buffers may be a loop buffer, one or more virtual loop buffers, and/or an instruction buffer. Instructions are stored in the modified instruction buffers for the length of the loop cycle. The instruction fetch within the instruction unit of a processor retrieves the instructions for the short loop from the modified buffers during the loop cycle, rather than from the instruction cache.
摘要翻译：一种用于在处理器指令单元内指令取出的方法，系统和计算机程序产品，利用循环缓冲器，一个或多个虚拟循环缓冲器和/或指令缓冲器。在指令获取期间，耦合到指令高速缓存（I-cache）的修改的指令缓冲器临时存储来自单个分支，向后短循环的指令。修改的指令缓冲器可以是循环缓冲器，一个或多个虚拟循环缓冲器和/或指令缓冲器。指令在循环周期长度存储在修改后的指令缓冲区中。处理器指令单元内的指令取出在循环周期内从修改的缓冲器而不是从指令高速缓存中检索短循环的指令。

16. 发明申请

US20100108093A1 ACOUSTIC ASSISTED SINGLE WAFER WET CLEAN FOR SEMICONDUCTOR WAFER PROCESS 有权
标题翻译：用于半导体波形过程的声学辅助单波浪清洁
公开(公告)号：US20100108093A1
公开(公告)日：2010-05-06
申请号：US12262094
申请日：2008-10-30
申请人： Grant Peng , David Mui , Shih-Chung Kon
发明人： Grant Peng , David Mui , Shih-Chung Kon
IPC分类号： B08B3/12
CPC分类号： H01L21/67051
摘要： A method for cleaning a substrate is provided that includes applying a liquid medium to a surface of the substrate such that the liquid medium substantially covers a portion of the substrate that is being cleaned. One or more transducers are used to generate acoustic energy. The generated acoustic energy is applied to the substrate and the liquid medium meniscus such that the applied acoustic energy to the liquid medium prevents cavitation within the liquid medium. The acoustic energy applied to the substrate provides maximum acoustic wave displacement to acoustic waves introduced into the liquid medium. The acoustic energy introduced into the substrate and the liquid medium enables dislodging of the particle contaminant from the surface of the substrate. The dislodged particle contaminants become entrapped within the liquid medium and are carried away from the surface of the substrate by the liquid medium.
摘要翻译：提供一种用于清洁衬底的方法，其包括将液体介质施加到衬底的表面，使得液体介质基本上覆盖正被清洁的衬底的一部分。使用一个或多个换能器来产生声能。产生的声能被施加到衬底和液体介质弯液面，使得向液体介质施加的声能防止液体介质内的气蚀。施加到衬底的声能提供了引入到液体介质中的声波的最大声波位移。引入到基底和液体介质中的声能使得能够从基底表面移除颗粒污染物。脱落的颗粒污染物被捕获在液体介质中，并通过液体介质从基板的表面带走。

17. 发明申请

US20090113191A1 Apparatus and Method for Improving Efficiency of Short Loop Instruction Fetch 有权
标题翻译：提高短循环指令获取效率的装置和方法
公开(公告)号：US20090113191A1
公开(公告)日：2009-04-30
申请号：US11923709
申请日：2007-10-25
申请人： Ronald Hall , Michael L. Karm , Brian R. Mestan , David Mui
发明人： Ronald Hall , Michael L. Karm , Brian R. Mestan , David Mui
IPC分类号： G06F9/30
CPC分类号： G06F9/3802 , G06F1/3234 , G06F9/30189 , G06F9/30196 , G06F9/325 , G06F9/381 , G06F9/3814 , G06F9/3836 , G06F9/3851 , G06F12/0875 , G06F2212/452
摘要： A method, system and computer program product for instruction fetching within a processor instruction unit, utilizing a loop buffer, one or more virtual loop buffers, and/or an instruction buffer. During instruction fetch, modified instruction buffers coupled to an instruction cache (I-cache) temporarily store instructions from a single branch, backwards short loop. The modified instruction buffers may be a loop buffer, one or more virtual loop buffers, and/or an instruction buffer. Instructions are stored in the modified instruction buffers for the length of the loop cycle. The instruction fetch within the instruction unit of a processor retrieves the instructions for the short loop from the modified buffers during the loop cycle, rather than from the instruction cache.
摘要翻译：一种用于在处理器指令单元内指令取出的方法，系统和计算机程序产品，利用循环缓冲器，一个或多个虚拟循环缓冲器和/或指令缓冲器。在指令获取期间，耦合到指令高速缓存（I-cache）的修改的指令缓冲器临时存储来自单个分支，向后短循环的指令。修改的指令缓冲器可以是循环缓冲器，一个或多个虚拟循环缓冲器和/或指令缓冲器。指令在循环周期长度存储在修改后的指令缓冲区中。处理器指令单元内的指令取出在循环周期内从修改的缓冲器而不是从指令高速缓存中检索短循环的指令。

18. 发明申请

US20070202706A1 METHOD AND APPARATUS FOR ETCHING MATERIAL LAYERS WITH HIGH UNIFORMITY OF A LATERAL ETCH RATE ACROSS A SUBSTRATE 审中-公开
公开(公告)号：US20070202706A1
公开(公告)日：2007-08-30
申请号：US11743882
申请日：2007-05-03
申请人： David Mui , Wei Liu
发明人： David Mui , Wei Liu
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/32137
摘要： A method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate using a gas mixture that includes a passivation gas. The passivation gas is provided to a peripheral region of the substrate to passivate sidewalls of the structures being etched.

19. 发明授权

US07250373B2 Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate 失效
标题翻译：用于蚀刻沿衬底的横向蚀刻速率的高均匀性的材料层的方法和装置
公开(公告)号：US07250373B2
公开(公告)日：2007-07-31
申请号：US10927807
申请日：2004-08-27
申请人： David Mui , Wei Liu
发明人： David Mui , Wei Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/32137
摘要： A method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate using a gas mixture that includes a passivation gas. The passivation gas is provided to a peripheral region of the substrate to passivate sidewalls of the structures being etched.
摘要翻译：一种用于使用包括钝化气体的气体混合物在衬底上蚀刻具有高均匀度横向蚀刻速率的材料层的方法和装置。钝化气体被提供到衬底的周边区域以钝化被蚀刻的结构的侧壁。

20. 发明授权

US06911399B2 Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition 失效
公开(公告)号：US06911399B2
公开(公告)日：2005-06-28
申请号：US10665934
申请日：2003-09-19
申请人： Wei Liu , David Mui
发明人： Wei Liu , David Mui
IPC分类号： H01L21/3065 , G03F7/40 , H01L21/027 , H01L21/311 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/40 , H01L21/0274
摘要： A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.

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