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1. 发明申请

US20050085090A1 Method for controlling accuracy and repeatability of an etch process 失效
标题翻译：用于控制蚀刻工艺的精度和重复性的方法
公开(公告)号：US20050085090A1
公开(公告)日：2005-04-21
申请号：US10690318
申请日：2003-10-21
申请人： David Mui , Wei Liu , Hiroki Sasano
发明人： David Mui , Wei Liu , Hiroki Sasano
IPC分类号： H01L21/3065 , G03F7/20 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/311 , H01L21/3213 , H01L21/461
CPC分类号： H01L21/02071 , H01L21/31138 , H01L21/32137 , H01L21/32139
摘要： Embodiments of the invention generally relate to a method for etching in a processing platform (e.g. a cluster tool) wherein robust pre-etch and post-etch data may be obtained in-situ. The method includes the steps of obtaining pre-etched critical dimension (CD) measurements of a feature on a substrate, etching the feature; treating the etched substrate to reduce and/or remove sidewall polymers deposited on the feature during etching, and obtaining post-etched CD measurements. The CD measurements may be utilized to adjust the etch process to improved the accuracy and repeatability of device fabrication.
摘要翻译：本发明的实施例通常涉及在处理平台（例如，集群工具）中蚀刻的方法，其中可以原位获得鲁棒的预蚀刻和蚀刻后数据。该方法包括以下步骤：获得衬底上特征的预蚀刻临界尺寸（CD）测量值，蚀刻该特征; 处理蚀刻的衬底以在蚀刻期间减少和/或去除沉积在特征上的侧壁聚合物，并获得后蚀刻的CD测量。可以使用CD测量来调整蚀刻工艺以提高器件制造的精度和可重复性。

2. 发明申请

US20050190381A1 Method and apparatus for controlling a calibration cycle or a metrology tool 失效
标题翻译：用于控制校准周期或计量工具的方法和装置
公开(公告)号：US20050190381A1
公开(公告)日：2005-09-01
申请号：US10788498
申请日：2004-02-26
申请人： David Mui , Hiroki Sasano , Wei Liu
发明人： David Mui , Hiroki Sasano , Wei Liu
IPC分类号： G01B11/06 , G01B11/24 , G01B11/28 , H01L21/66
CPC分类号： G01B11/0616 , G01B11/24 , H01L22/20
摘要： A method and apparatus for controlling when a calibration cycle is started for a metrology tool. The method and apparatus exploits a correlation between a drift of a first parameter (e.g., film thickness measurement drift) and a drift of a second parameter (e.g., CD measurement drift). One embodiment of the method comprises measuring a film thickness on one or more reference substrates to determine when a drift component of these measurements exceeds a pre-determined range and thereafter calibrating the metrology tool when the drift component of the film thickness measurements exceeds the pre-determined range. Generally, the drift of the film thickness measurement will occur prior to substantial drift of the CD measurement occurring.
摘要翻译：一种用于控制计量工具何时开始校准周期的方法和装置。该方法和装置利用第一参数的漂移（例如，膜厚度测量漂移）和第二参数的漂移（例如，CD测量漂移）之间的相关性。该方法的一个实施例包括测量一个或多个参考基底上的膜厚度，以确定这些测量的漂移分量何时超过预定范围，然后当膜厚度测量的漂移分量超过预定范围时校准测量工具，确定范围。通常，膜厚度测量的漂移将发生在发生CD测量的实质漂移之前。

3. 发明申请

US20060091108A1 Method and apparatus for controlling etch processes during fabrication of semiconductor devices 失效
公开(公告)号：US20060091108A1
公开(公告)日：2006-05-04
申请号：US11263780
申请日：2005-10-31
申请人： David Mui , Wei Liu , Hiroki Sasano
发明人： David Mui , Wei Liu , Hiroki Sasano
IPC分类号： G01L21/30 , B44C1/22 , C23F1/00
CPC分类号： G03F7/70625 , H01L21/67207 , H01L21/67253 , H01L22/20
摘要： A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such a method.

4. 发明授权

US07262865B2 Method and apparatus for controlling a calibration cycle or a metrology tool 失效
标题翻译：用于控制校准周期或计量工具的方法和装置
公开(公告)号：US07262865B2
公开(公告)日：2007-08-28
申请号：US10788498
申请日：2004-02-26
申请人： David Mui , Hiroki Sasano , Wei Liu
发明人： David Mui , Hiroki Sasano , Wei Liu
IPC分类号： G01B11/28 , G01B11/02 , G12B13/00
CPC分类号： G01B11/0616 , G01B11/24 , H01L22/20
摘要： A method and apparatus for controlling when a calibration cycle is started for a metrology tool. The method and apparatus exploits a correlation between a drift of a first parameter (e.g., film thickness measurement drift) and a drift of a second parameter (e.g., CD measurement drift). One embodiment of the method comprises measuring a film thickness on one or more reference substrates to determine when a drift component of these measurements exceeds a pre-determined range and thereafter calibrating the metrology tool when the drift component of the film thickness measurements exceeds the pre-determined range. Generally, the drift of the film thickness measurement will occur prior to substantial drift of the CD measurement occurring.
摘要翻译：一种用于控制计量工具何时开始校准周期的方法和装置。该方法和装置利用第一参数的漂移（例如，膜厚度测量漂移）和第二参数的漂移（例如，CD测量漂移）之间的相关性。该方法的一个实施例包括测量一个或多个参考基底上的膜厚度，以确定这些测量的漂移分量何时超过预定范围，然后当膜厚度测量的漂移分量超过预定范围时校准测量工具，确定范围。通常，膜厚度测量的漂移将发生在发生CD测量的实质漂移之前。

5. 发明授权

US07094613B2 Method for controlling accuracy and repeatability of an etch process 失效
标题翻译：用于控制蚀刻工艺的精度和重复性的方法
公开(公告)号：US07094613B2
公开(公告)日：2006-08-22
申请号：US10690318
申请日：2003-10-21
申请人： David Mui , Wei Liu , Hiroki Sasano
发明人： David Mui , Wei Liu , Hiroki Sasano
IPC分类号： H01L21/00
CPC分类号： H01L21/02071 , H01L21/31138 , H01L21/32137 , H01L21/32139
摘要： Embodiments of the invention generally relate to a method for etching in a processing platform (e.g. a cluster tool) wherein robust pre-etch and post-etch data may be obtained in-situ. The method includes the steps of obtaining pre-etched critical dimension (CD) measurements of a feature on a substrate, etching the feature; treating the etched substrate to reduce and/or remove sidewall polymers deposited on the feature during etching, and obtaining post-etched CD measurements. The CD measurements may be utilized to adjust the etch process to improved the accuracy and repeatability of device fabrication.
摘要翻译：本发明的实施例通常涉及在处理平台（例如，集群工具）中蚀刻的方法，其中可以原位获得鲁棒的预蚀刻和蚀刻后数据。该方法包括以下步骤：获得衬底上特征的预蚀刻临界尺寸（CD）测量值，蚀刻该特征; 处理蚀刻的衬底以在蚀刻期间减少和/或去除沉积在特征上的侧壁聚合物，并获得后蚀刻的CD测量。可以使用CD测量来调整蚀刻工艺以提高器件制造的精度和可重复性。

6. 发明申请

US20050064714A1 Method for controlling critical dimensions during an etch process 审中-公开
标题翻译：在蚀刻过程中控制临界尺寸的方法
公开(公告)号：US20050064714A1
公开(公告)日：2005-03-24
申请号：US10666317
申请日：2003-09-19
申请人： David Mui , Wei Liu , Hiroki Sasano , Kyeongran Yoo
发明人： David Mui , Wei Liu , Hiroki Sasano , Kyeongran Yoo
IPC分类号： H01L21/28 , H01L21/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/336 , H01L21/461 , H01L21/66 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/32137 , H01L21/28123 , H01L21/32139
摘要： A method for controlling dimensions of structures formed on a substrate using an etch process includes measuring pre-etch dimensions of the respective elements of a patterned etch mask and adjusting a process recipe of the etch process using the results of the pre-etch measurements. In one application, the method is used to control critical dimensions of a gate structure of a field effect transistor.
摘要翻译：使用蚀刻工艺来控制在衬底上形成的结构的尺寸的方法包括测量图案化蚀刻掩模的各个元件的预蚀刻尺寸，并使用预蚀刻测量的结果调整蚀刻工艺的工艺配方。在一个应用中，该方法用于控制场效应晶体管的栅极结构的关键尺寸。

7. 发明申请

US20050032250A1 Chamber stability monitoring using an integrated metrology tool 有权
标题翻译：室内稳定性监测采用综合计量工具
公开(公告)号：US20050032250A1
公开(公告)日：2005-02-10
申请号：US10636468
申请日：2003-08-06
申请人： David Mui , Wei Liu , Hiroki Sasano
发明人： David Mui , Wei Liu , Hiroki Sasano
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/66
CPC分类号： H01L22/20 , H01L21/3065 , H01L21/3081
摘要： A method and apparatus for monitoring the stability of a substrate processing chamber and for adjusting the process recipe. Thickness and CD measurement data are collected before wafer processing and after wafer processing by an integrated or an in-situ metrology tool to monitor process chamber stability and to adjust the process recipe. The real time chamber stability monitoring enabled by the integrated metrology tool reduces the risk and cost of wafer mis-processing. The real time process recipe adjustment allows tightening of the process recipe. Process development cycle can also be reduced by the method and apparatus.
摘要翻译：一种用于监测基板处理室的稳定性并用于调整工艺配方的方法和装置。厚度和CD测量数据在晶片处理之前和通过集成或原位计量工具进行晶片处理之后收集以监测处理室稳定性并调整工艺配方。通过集成度量工具实现的实时室稳定性监测降低了晶片错误处理的风险和成本。实时过程配方调整可以缩短加工配方。方法和装置也可以减少过程开发周期。

8. 发明授权

US07498106B2 Method and apparatus for controlling etch processes during fabrication of semiconductor devices 失效
标题翻译：用于在半导体器件制造期间控制蚀刻工艺的方法和装置
公开(公告)号：US07498106B2
公开(公告)日：2009-03-03
申请号：US11263780
申请日：2005-10-31
申请人： David S L Mui , Wei Liu , Hiroki Sasano
发明人： David S L Mui , Wei Liu , Hiroki Sasano
IPC分类号： G01B11/14
CPC分类号： G03F7/70625 , H01L21/67207 , H01L21/67253 , H01L22/20
摘要： A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such a method.
摘要翻译：一种用于在半导体器件制造期间控制蚀刻工艺的方法包括对非产品和产品基底进行的测试和测量，以定义N参数CD控制图，其用于计算用于将图案化掩模修剪到预定的处理时间宽度。一种用于执行这种方法的装置。

9. 发明授权

US06960416B2 Method and apparatus for controlling etch processes during fabrication of semiconductor devices 失效
标题翻译：用于在半导体器件制造期间控制蚀刻工艺的方法和装置
公开(公告)号：US06960416B2
公开(公告)日：2005-11-01
申请号：US10428145
申请日：2003-05-01
申请人： David S L Mui , Wei Liu , Hiroki Sasano
发明人： David S L Mui , Wei Liu , Hiroki Sasano
IPC分类号： G03F7/20 , H01L21/66 , G01B11/02
CPC分类号： G03F7/70625 , H01L21/67207 , H01L21/67253 , H01L22/20
摘要： A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such a method.
摘要翻译：一种用于在半导体器件制造期间控制蚀刻工艺的方法包括对非产品和产品基底进行的测试和测量，以定义N参数CD控制图，其用于计算用于将图案化掩模修剪到预定的处理时间宽度。一种用于执行这种方法的装置。

10. 发明授权

US06924088B2 Method and system for realtime CD microloading control 有权
标题翻译：实时CD微控制方法与系统
公开(公告)号：US06924088B2
公开(公告)日：2005-08-02
申请号：US10464479
申请日：2003-06-18
申请人： David S. L. Mui , Wei Liu , Shashank C. Deshmukh , Hiroki Sasano
发明人： David S. L. Mui , Wei Liu , Shashank C. Deshmukh , Hiroki Sasano
IPC分类号： G03F7/20 , H01L21/66 , G01B11/02
CPC分类号： G03F7/70625 , H01L22/20 , Y10S977/854
摘要： A method and apparatus for processing a semiconductor wafer is provided for reducing CD microloading variation. OCD metrology is used to inspect a wafer to determine pre-etch CD microloading, by measuring the CD of dense and isolated photoresist lines. Other parameters can also be measured or otherwise determined, such as sidewall profile, photoresist layer thickness, underlying layer thickness, photoresist pattern density, open area, etc. The inspection results are fed forward to the etcher to determine process parameters, such as resist trim time and/or etch conditions, thereby achieving the desired post-etch CD microloading. In certain embodiments, the CD and profile measurements, trim, etch processing and post-etch cleaning are performed at a single module in a controlled environment. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps.
摘要翻译：提供了一种用于处理半导体晶片的方法和设备，用于减少CD微型负载变化。 OCD测量用于通过测量致密和隔离的光致抗蚀剂线的CD来检查晶片以确定预蚀刻CD微载入。也可以测量或确定其它参数，例如侧壁轮廓，光致抗蚀剂层厚度，下层厚度，光致抗蚀剂图案密度，开放面积等。检查结果向前馈送到蚀刻器以确定工艺参数，例如抗蚀剂修整时间和/或蚀刻条件，从而实现所需的后蚀刻CD微加载。在某些实施例中，CD和轮廓测量，修剪，蚀刻处理和蚀刻后清洁在受控环境中的单个模块执行。模块执行的所有转移和处理步骤都在干净的环境中进行，从而通过避免将晶片暴露在大气中并在步骤之间可能的污染来提高产量。

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