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11. 发明授权

US5356515A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5356515A
公开(公告)日：1994-10-18
申请号：US988809
申请日：1992-12-10
申请人： Yoshifumi Tahara , Yoshihisa Hirano , Masahiro Ogasawara , Isahiro Hasegawa , Keiji Horioka , Takaya Matsushita
发明人： Yoshifumi Tahara , Yoshihisa Hirano , Masahiro Ogasawara , Isahiro Hasegawa , Keiji Horioka , Takaya Matsushita
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116
摘要： A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0.degree. C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0.degree. C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.
摘要翻译：一种干蚀刻方法，其包括将具有氧化物部分或氮化物部分的工件供应到处理容器中，将所述工件保持在所述处理容器内不高于0℃的温度，提供包括含有卤素的第一气体的蚀刻气体元素和含有氧化数小于4的碳的第二气体和氧气到工件附近的区域，同时将工件的温度保持在不高于0℃的水平，并形成所述蚀刻的等离子体用于利用所述等离子体蚀刻工件的氧化物部分或氮化物部分的气体。

12. 发明授权

US5271788A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5271788A
公开(公告)日：1993-12-21
申请号：US917361
申请日：1992-07-23
申请人： Makoto Hasegawa , Takaya Matsushita , Keiji Horioka , Isahiro Hasegawa , Toshihisa Nozawa , Yoshio Ishikawa , Masahito Hiratsuka , Satoshi Kaneko
发明人： Makoto Hasegawa , Takaya Matsushita , Keiji Horioka , Isahiro Hasegawa , Toshihisa Nozawa , Yoshio Ishikawa , Masahito Hiratsuka , Satoshi Kaneko
IPC分类号： H01J37/32 , C23F1/02
CPC分类号： H01J37/32082 , H01J37/3255 , H01J37/32623 , H01J37/32642 , H01J37/3266
摘要： A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.

13. 发明授权

US5270266A Method of adjusting the temperature of a semiconductor wafer 失效
标题翻译：调整半导体晶片的温度的方法
公开(公告)号：US5270266A
公开(公告)日：1993-12-14
申请号：US988669
申请日：1992-12-10
申请人： Yoshihisa Hirano , Yoshifumi Tahara , Isahiro Hasegawa , Keiji Horioka
发明人： Yoshihisa Hirano , Yoshifumi Tahara , Isahiro Hasegawa , Keiji Horioka
IPC分类号： B23Q3/15 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , H01L21/465
CPC分类号： H01L21/67109 , H01J37/3244 , H01J2237/2001 , Y10S148/05
摘要： A method of adjusting the temperature of a semiconductor wafer comprising mounting and attracting the wafer on a susceptor in a process chamber, exhausting and decompressing the process chamber, controlling the temperature of the wafer to become equal to a process temperature while cooling or heating the susceptor, supplying process gas into the chamber to process the wafer with this process gas, and introducing CF.sub.4 gas into interstices between the wafer and the susceptor through the susceptor to allow heat exchange to be achieved between them. CF.sub.4 gas includes same components as at least some of those of the process gas and it is more excellent in heat transmitting characteristic than helium gas. Even when CF.sub.4 gas is leaked into a process area, therefore, any influence is not added to the process.
摘要翻译：一种调节半导体晶片的温度的方法，包括在处理室中的基座上安装和吸引晶片，对处理室进行排气和减压，在冷却或加热基座的同时将晶片的温度控制为等于处理温度将处理气体供应到室中以用该处理气体处理晶片，并且通过基座将CF 4气体引入到晶片和基座之间的间隙中以允许在它们之间实现热交换。 CF4气体包括与工艺气体中的至少一些相同的组分，并且其传热特性比氦气更优异。因此，即使CF4气体泄漏到处理区域中，也不会对过程产生任何影响。

14. 发明授权

US06261428B1 Magnetron plasma process apparatus 失效
标题翻译：磁控管等离子体处理装置
公开(公告)号：US06261428B1
公开(公告)日：2001-07-17
申请号：US08183787
申请日：1994-01-21
申请人： Toshihisa Nozawa , Keiji Horioka , Isahiro Hasegawa
发明人： Toshihisa Nozawa , Keiji Horioka , Isahiro Hasegawa
IPC分类号： C23C1434
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space between the electrodes, a high-frequency power supply for generating an electric field, to thereby to form plasma from the process gas, and magnetic field generating section for generating a magnetic field which extends through the space between the electrodes. The magnetic field generating section has a pair of permanent magnets located outside the process chamber, sandwiching the space between the electrodes. The magnetic field generated by this section extends through said space, from one of the magnets to the other thereof and substantially parallel to the electrodes, and serves to achieve magnetron plasma process on an object placed on the lower electrode.
摘要翻译：磁控管等离子体处理装置包括处理室，上电极和下电极，两者都位于处理室内并且彼此平行延伸;气体供应系统，用于将处理气体供应到电极之间的空间中，高用于产生电场，从而从处理气体形成等离子体的频率电源以及用于产生延伸穿过电极之间的空间的磁场的磁场产生部。磁场产生部分具有位于处理室外的一对永磁体，夹在电极之间的空间。由该部分产生的磁场延伸穿过所述空间，从一个磁体到另一个磁体并且基本上平行于电极，并且用于在放置在下电极上的物体上实现磁控管等离子体处理。

15. 发明授权

US5698070A Method of etching film formed on semiconductor wafer 失效
标题翻译：在半导体晶片上形成的蚀刻膜的方法
公开(公告)号：US5698070A
公开(公告)日：1997-12-16
申请号：US175513
申请日：1993-12-30
申请人： Yoshihisa Hirano , Yoshifumi Tahara , Hiroshi Nishikawa , Isahiro Hasegawa , Keiji Horioka
发明人： Yoshihisa Hirano , Yoshifumi Tahara , Hiroshi Nishikawa , Isahiro Hasegawa , Keiji Horioka
IPC分类号： H01L21/00 , H05H1/00
CPC分类号： H01L21/67109 , H01J37/3244 , H01J2237/2001
摘要： A method of etching oxide film on a semiconductor wafer comprising pushing the wafer against the top of lower electrode while facing it to an upper electrode, decompressing to exhaust a chamber, forming electric field between the wafer and the upper electrode under decompressed state and generating the gas plasma of process gas while supplying the process gas to an oxide-film-formed surface of the wafer through the upper electrode, introducing auxiliary gas to the peripheral portion of the wafer when the gas plasma of process gas is acting on the wafer, and controlling the etching reaction of the gas plasma relative to the peripheral portion of the wafer by auxiliary gas.
摘要翻译：一种在半导体晶片上蚀刻氧化膜的方法，包括将晶片压靠在下电极的顶部同时面向上电极，减压以排出室，在解压缩状态下在晶片和上电极之间形成电场，并产生在处理气体的气体等离子体中，同时通过上部电极将工艺气体供给到晶片的氧化物膜形成表面，当处理气体的气体等离子体作用在晶片上时，将辅助气体引入晶片的周边部分，以及通过辅助气体控制气体等离子体相对于晶片的周边部分的蚀刻反应。

16. 发明授权

US5302236A Method of etching object to be processed including oxide or nitride portion 失效
标题翻译：蚀刻包括氧化物或氮化物部分的待处理物体的方法
公开(公告)号：US5302236A
公开(公告)日：1994-04-12
申请号：US779376
申请日：1991-10-18
申请人： Yoshifumi Tahara , Yoshihisa Hirano , Isahiro Hasegawa , Keiji Horioka
发明人： Yoshifumi Tahara , Yoshihisa Hirano , Isahiro Hasegawa , Keiji Horioka
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31144 , H01L21/31116
摘要： According to this invention, a semiconductor wafer on which an oxide or nitride film is formed is loaded in a processing vessel, and when the oxide or nitride film of the semiconductor wafer is to be etched by a plasma of CHF.sub.3 gas in the processing vessel, CO gas is present in the plasma atmosphere.
摘要翻译：根据本发明，其中形成有氧化物或氮化物膜的半导体晶片被装载到处理容器中，并且当半导体晶片的氧化物或氮化物膜被处理容器中的CHF 3气体的等离子体蚀刻时， CO气体存在于等离子体气氛中。

17. 发明授权

US5290381A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US5290381A
公开(公告)日：1994-03-01
申请号：US799056
申请日：1991-11-27
申请人： Toshihisa Nozawa , Junichi Arami , Keiji Horioka , Isahiro Hasegawa
发明人： Toshihisa Nozawa , Junichi Arami , Keiji Horioka , Isahiro Hasegawa
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32431 , H01L21/6838 , H01J2237/2001 , H01J2237/334
摘要： A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.
摘要翻译：一种等离子体蚀刻装置，包括用于保持半导体晶片的基座，具有大冷却能力的冷却剂并能够快速地将所述基座冷却到预期低温的冷却套，封闭基座和冷却套的处理室，气体用于排出处理室的排出机构，插入在基座和冷却套之间的绝缘构件，用于将气体供给到设置在基座，绝缘构件和冷却区的界面区域上的O形环保持槽的气体供给装置以及用于控制供给气体的压力的压力控制机构。

18. 发明授权

US5250137A Plasma treating apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5250137A
公开(公告)日：1993-10-05
申请号：US731475
申请日：1991-07-17
申请人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
发明人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
IPC分类号： C23C14/40 , C23C14/50 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , B05C5/00
CPC分类号： H01L21/67069 , H01L21/6831
摘要： A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.
摘要翻译：等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。防止提供给基座的RF电流流入卡盘的导电层，以便抑制与电缆连接的电缆的RF电流泄漏，以用于高电压施加。等离子体处理装置包括具有第一电极，设置在室内的第二电极的室，从外部插入室的圆柱形高频电源构件，使得构件的尖端连接到第二电极，高频电源装置，用于通过所述电源构件向所述第二电极提供高频电力，以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘，其布置在所述第二电极上，导电层形成在绝缘层内，用于施加高电压的电缆，所述电缆插入到电源构件中，并且尖端连接到静电卡盘的导电层，以及连接到电缆的电源。

19. 发明授权

US5445710A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5445710A
公开(公告)日：1995-08-29
申请号：US202372
申请日：1994-02-25
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31122 , H01L21/0332 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
摘要翻译：一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜，含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

20. 发明授权

US6132551A Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil 失效
标题翻译：具有架空线圈的感应RF等离子体反应器和架空线圈下面的导电层压射频窗口
公开(公告)号：US6132551A
公开(公告)日：2000-10-17
申请号：US937348
申请日：1997-09-20
申请人： Keiji Horioka , Haruo Okano
发明人： Keiji Horioka , Haruo Okano
IPC分类号： H01J37/32 , C23C16/48 , C23F1/02 , C23F1/08
CPC分类号： H01J37/321
摘要： The invention is embodied in an inductively coupled plasma reactor having a conductive enclosure defining a reactor chamber interior, the enclosure including a conductive layer, and an inductive antenna external of the reactor chamber interior and facing the interior through the conductive layer and being connectable to an RF power source, the conductive layer being sufficiently thin to permit an inductive field of the inductive antenna to coupled through the conductive layer into the reactor chamber interior. A wafer pedestal for supporting a semiconductive workpiece within the reactor chamber interior is connected to an RF bias power supply whereby a workpiece on the wafer support is a bias power electrode and the conductive layer is a bias power counter electrode, so that the entire reactor enclosure is a bias power counter electrode. Preferably, the bias power electrode is biased with respect to RF ground, and the conductive reactor enclosure including the conductive layer is grounded.
摘要翻译：本发明体现在电感耦合等离子体反应器中，其具有限定反应室内部的导电外壳，外壳包括导电层，以及反应室内部外部的电感天线，并通过导电层面向内部，并且可连接到 RF电源，导电层足够薄以允许感应天线的感应场通过导电层耦合到反应室内部。用于在反应器室内部支撑半导体工件的晶片基座连接到RF偏置电源，由此晶片支撑件上的工件是偏置功率电极，并且导电层是偏置功率对电极，使得整个反应器外壳是偏置电源对电极。优选地，偏置功率电极相对于RF地被偏置，并且包括导电层的导电电抗器外壳接地。

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