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11. 发明专利

JPH0158659B2 失效
公开(公告)号：JPH0158659B2
公开(公告)日：1989-12-13
申请号：JP18840384
申请日：1984-09-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： YUYA NAOKI , HINE SHIRO , YAMAWAKI MASAO , UENO MASAFUMI , YAMAKAWA SATOSHI , KIMATA MASAAKI
IPC分类号： H01L21/205 , H01L21/76

12. 发明专利

JPS63221668A SCHOTTKY BARRIER DIODE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63221668A
公开(公告)日：1988-09-14
申请号：JP5594287
申请日：1987-03-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： YUYA NAOKI
IPC分类号： H01L29/47 , H01L29/861 , H01L29/872
摘要： PURPOSE:To achieve the miniaturization of a Schottky barrier diode and to improve the accuracy of the diode by forming an annular second electrode around a first electrode on an insulating film. CONSTITUTION:A thin oxide film 4 and a thick oxide film 2 are formed on a semiconductor substrate 1 made of a P-type silicon substrate, and a channel stopper 3 made of a P type impurity diffused layer is formed under the film 2. Then, a polysilicon layer is formed on the films 2, 4, and patterned to form a polysilicon electrode 5 which planely becomes annular. When the film 4 exposed in the annular interior of the electrode 5 is, for example, removed by etching with solution of hydrogen fluoride or the like, the electrode 5 is not etched but performs as a mask, an opening 6 is formed to expose part of the substrate 1. When platinum or the like is then deposited by a depositing method or the like in the opening 6 on the substrate 1 and the electrode 5 and heat treated, a metal electrode 7a made of platinum silicide is formed on the substrate 1, and a metal electrode 7b made of platinum silicide is formed on the electrode 5. Then, unreacted platinum remaining on the oxide 2 is selectively removed by aqua regia. Thus, reverse dielectric strength is improved, a guard ring is eliminated, and a miniaturization is further improved.

13. 发明专利

JPS62122275A MIS TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62122275A
公开(公告)日：1987-06-03
申请号：JP26274985
申请日：1985-11-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU , ASAI SOTOHISA , IWADE SHUHEI , YUYA NAOKI
IPC分类号： H01L29/78 , H01L27/12 , H01L29/10 , H01L29/16 , H01L29/786
摘要： PURPOSE:To eliminate the effect of an interface level and to obtain a highly reliable semiconductor device, by changing the composition of amorphous semiconductors, and providing the minimum value of a forbidden band at a part inner than the interface between an insulating film and the semiconductor. CONSTITUTION:On an insulating substrate 5, a gate electrode 6 is formed. A gate insulating film 1, amorphous semiconductors, e.g., amorphous silicon carbide layers 2 and 4, and an amorphous silicon layer 3 are formed in the same film growing tank. Thereafter, source and drain electrodes 7 and 8 are formed. By forming the amorphous semiconductors having the different forbidden bands at the interface between the insulating film and the semiconductors, a potential well is formed. Since carrier charge is present in this well, the effect of the interface level is not received. In the MIS type FET having such a structure, a current path is formed as shown by an arrow, and the effect of the interface level is not exerted, too.

14. 发明专利

JPS6239057A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS6239057A
公开(公告)日：1987-02-20
申请号：JP17965285
申请日：1985-08-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： YUYA NAOKI , KIMATA MASAAKI , DENDA MASAHIKO
IPC分类号： H01L27/148 , H01L27/14 , H04N5/335 , H04N5/341 , H04N5/372
摘要： PURPOSE:To decrease the transfer loss in the junction between a transfer gate and a transfer channel, by providing an impurity layer on the surface of a substrate in the transfer channel provided by a buried channel, the impurity layer having a type of conductivity opposite to that of the buried channel. CONSTITUTION:In the region where a transfer gate 36 is connected with a transfer channel 3, an impurity layer 11 having a type of conductivity different from that of the transfer channel 3 is provided on the surface of the transfer channel (buried channel) 3. By appropriately controlling the impurity concentration of the impurity layer 11, any potential well produced by the narrow channel effect in the transfer channel can be eliminated completely. The channel potential is thereby rendered flat along the charge transfer direction, and the transfer loss in the charge transfer can be decreased.

15. 发明专利

JPS6165447A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6165447A
公开(公告)日：1986-04-04
申请号：JP18840284
申请日：1984-09-07
申请人： Mitsubishi Electric Corp
发明人： HINE SHIRO , YAMAWAKI MASAO , YUYA NAOKI , UENO MASAFUMI , YAMAKAWA SATOSHI , KIMATA MASAAKI
IPC分类号： H01L21/205 , H01L21/76
CPC分类号： H01L21/76
摘要： PURPOSE:To obtain epitaxial layers uncovered with the second insulation films as active regions without defects, by a method wherein the second insulation film is formed on the surface in the neighborhood of the interface between the first insulation film by applying selective oxidation to the epitaxial layer formed after formation of the first insulation film. CONSTITUTION:The first insulation film 2 is formed on a substrate 1, and epitaxial layers 3 are formed on the surface of the substrate 1 in parts of removal of this film by using the selective epitaxial growing method. Selective oxide films 5 are formed on the surface in the neighborhood of interfaces between the second insulation films 2 by applying selective oxidation to the epitaxial layers 3. As a result, the epitaxial layers 3 whose surfaces are not covered with the oxide films 5 are formed as active regions. This manner prevents the cover of defective regions over the active regions and reduces the leakage current.
摘要翻译：目的：为了获得用第二绝缘膜未覆盖的外延层作为无缺陷的有源区，通过这样一种方法，其中第二绝缘膜通过向外延层施加选择性氧化而形成在第一绝缘膜之间的界面附近的表面上在形成第一绝缘膜之后形成。构成：在基板1上形成第一绝缘膜2，并且通过使用选择性外延生长方法去除该膜的部分，在基板1的表面上形成外延层3。通过对外延层3施加选择性氧化，在第二绝缘膜2之间的界面附近的表面上形成选择性氧化物膜5.结果，形成表面未被氧化物膜5覆盖的外延层3 作为活跃区域。通过这种方式防止有源区域上的缺陷区域覆盖，并且减少漏电流。

16. 发明专利

JPS6027164A INFRARED-RAY SOLID-STATE IMAGE PICKUP ELEMENT 失效
公开(公告)号：JPS6027164A
公开(公告)日：1985-02-12
申请号：JP13709483
申请日：1983-07-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YUYA NAOKI , TSUBOUCHI NATSUO
IPC分类号： H04N5/33 , H01L27/14 , H01L27/148
摘要： PURPOSE:To enable to obtain the value of absolute temperature of an object as well as the distribution of temperature by a method wherein Schottky junction having different heights of barriers are arranged in stripe form. CONSTITUTION:The Schottky junctions 1, 2, and 3 having barrier heights different from each other are arranged in stripe form. Shift registers 61-63 transferring charges outputted from the junctions 1-3 are provided in the direction of line of the matrix directional array 5 of each junction, and shift registers 71-73 in the direction of line. The calculation of three image signals obtained from the junctions 1-3 of each pair leads to obtaining the signals indicating the distribution of temperature of the object, the absolute temperature and the emissivity thereof.

17. 发明专利

JPS6014578A INFRARED RAY IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS6014578A
公开(公告)日：1985-01-25
申请号：JP12290483
申请日：1983-07-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： YUYA NAOKI , DENDA MASAHIKO
IPC分类号： H04N5/33
摘要： PURPOSE:To attain a small-sized, lightweight device at low power consumption and to improve the reliability by using plural infrared ray solidstate image pickup elements having different infrared ray spectral sensitivity characteristic so as to image pickup the same thermal ray image of an object thereby obtaining the temperature distribution and absolute temperature value of the object from a picture signal. CONSTITUTION:The infrared ray solid-state image pickup elements 10, 11 and 12 have different infrared ray spectral sensitivity characteristic from each other by infrared ray band pass filters 13, 14 and 15. Then a picture signal I1 of an infrared ray image having lambda1+ or -DELTAlambda1/2 is outputted to a signal processing circuit 16 from the infrared ray solid-state image pickup element 10, a picture signal I2 of the infrared ray image having lambda2+ or -DELTAlambda2 is outputted to the signal processing circuit 16 from the element 11 and a picture signal I3 of the infrared ray image having lambda3+ or -DELTAlambda3 is outputted to the signal processing circuit 16 from the element 12. The signal processing circuit 16 converts the picture signals I1, I2 and I3 outputted from the infrared ray solid-state image pickup elements 10, 11 and 12 into a picture signal I representing the temperature distribution of the object 50, a signal representing the absolute temperature T of the object 50 and a signal representing the radiation factor epsilon of the object 50 and outputs them.

18. 发明专利

JPS59225680A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS59225680A
公开(公告)日：1984-12-18
申请号：JP10198583
申请日：1983-06-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： YUYA NAOKI , TSUBOUCHI NATSUO
IPC分类号： H01L27/148 , H04N5/33 , H04N5/335 , H04N5/341 , H04N5/3728 , H04N5/374 , H04N5/30 , H01L27/14
摘要： PURPOSE:To attain image pickup of visual light and infrared ray by one device and to obtain high reliability with simple constitution by providing a Schottky junction constituting an infrared ray detecting section and a pn junction constituting a visual light detecting section formed therearound to each photoelectric converting section. CONSTITUTION:When a visual light or an infrared ray is made incident from the upper face, an electric charge is generated in a photodiode comprising a p-channel silicon substrate 7 and an n-channel region 9 of a visual light detecting section 2 and stored in a junction capacitance of the photodiode. This visual light detecting section 2 can detect light having a wavelength ranging from visual light wavelength to

19. 发明专利

JP2013161805A Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：JP2013161805A
公开(公告)日：2013-08-19
申请号：JP2012019760
申请日：2012-02-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： CHIKAMORI DAISUKE , NISHIO YASUHIKO , YUYA NAOKI
IPC分类号： H01L21/285 , C23C14/14 , C23C14/34 , C23C14/58 , H01L21/28 , H01L29/47 , H01L29/872
CPC分类号： H01L29/872 , C23C14/185 , C23C14/3492 , C23C14/35 , H01J37/32082 , H01J37/34 , H01L21/0495 , H01L29/1608 , H01L29/47 , H01L29/6606
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device capable of suppressing damages generated at an interface between silicon carbide and metal when a metal material is sputtered to deposit a metal film on a silicon carbide substrate, and of manufacturing a silicon carbide semiconductor device having constant electric characteristics with stability.SOLUTION: A target 23 made of a metal material is sputtered to deposit a metal film on a silicon carbide substrate 10. At this time, the metal film is deposited on a condition that an incident energy to the silicon carbide substrate 10, of the metal material sputtered from the target 23 and a sputtering gas flowed in from a gas introduction port 27 is smaller than a binding energy of silicon carbide, in concrete terms, on a condition that the incident energy is smaller than 4.8 eV. For example, a high-frequency voltage applied between a cathode 21 and an anode 22 is set to be 20 V or more and 300 V or less to deposit the metal film.
摘要翻译：要解决的问题：提供一种制造碳化硅半导体器件的方法，其能够抑制当溅射金属材料以在碳化硅衬底上沉积金属膜时在碳化硅和金属之间的界面处产生的损伤，并且制造具有稳定的电特性的碳化硅半导体器件。解决方案：溅射由金属材料制成的靶23，以在碳化硅衬底10上沉积金属膜。此时，金属膜以事件从靶23溅射的金属材料和从气体导入口27流入的溅射气体的碳化硅衬底10的能量，具体而言小于碳化硅衬底10的入射能量小于4.8 eV。例如，施加在阴极21和阳极22之间的高频电压设定为20V以上且300V以下，以沉积金属膜。

20. 发明专利

JP2013098316A Silicon carbide semiconductor device 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：JP2013098316A
公开(公告)日：2013-05-20
申请号：JP2011239016
申请日：2011-10-31
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YUYA NAOKI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L29/06 , H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device with a temperature sensor which can be formed with a small number of steps and has excellent heat resistance.SOLUTION: A silicon carbide semiconductor device comprises: a semiconductor element formed on an active region AR of a silicon carbide substrate 1; a well region 5 formed in the silicon carbide substrate 1 so as to surround the active region AR; a gate electrode 8 composed of polycrystalline silicon and disposed on the silicon carbide substrate 1; and a resistance temperature detector 17 formed simultaneously with the gate electrode 8 and formed using a part thereof.

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