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11. 发明专利

JPH08213492A SEMICONDUCTOR DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH08213492A
公开(公告)日：1996-08-20
申请号：JP1950695
申请日：1995-02-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： H01L27/06 , H01L21/8222 , H01L21/8248 , H01L21/8249
摘要： PURPOSE: To reduce a capacity between-the base and emitter by decreasing the capacity elements by the insulation film between a polysilicon emitter and base substrate in a bipolar transistor where an emitter electrode is made of polysilicon. CONSTITUTION: A base area 13 of a Bip-Tr part 14 is subject to ion implantation using a resist 7a as mask, following further ion implantation such as Si , F , O , etc. Then, after the channel dope injection for MOS-Tr, the Bip-Tr part 14 and MOS-Tr parts 15 and 16 are subject to oxidizing etching until the silicon in the active area thereof is exposed. Thereafter a gate oxide film 17a for the MOS-Tr is formed. At this time, an oxide film 17b on the base 13 in the part 14 is made thick by accelerated oxidation. Thus, the capacity component formed of an area between the polysilicon emitter electrode and base in the part 14 can be decreased, resulting in reduction of capacity between the base and emitter.

12. 发明专利

JPH05235276A 失效
公开(公告)号：JPH05235276A
公开(公告)日：1993-09-10
申请号：JP3623192
申请日：1992-02-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： H01L27/04 , H01L21/822
摘要： PURPOSE:To maintain a polycrystal silicon layer and prevent silicide condensation and contact resistance increase by thinning the resistance area of the polycrystal silicon layer and thickening the film thickness of the contact. CONSTITUTION:After accumulating a first polycrystal silicon layer on the oxide film 11 on a semiconductor substrate plane and thermally treating the front plane with impurity injection, patterning is performed for the prescribed shape and a resistance layer 12 is selectively formed. Then, a first interlayer insulating film 13 is accumulated on the oxide film 11, contact holes 13a and 13b are opened at the prescribed parts on the first interlayer insulating film 13 using a resist pattern as a mask and the resist pattern is removed. A second polycrystal silicon layer is accumulated to be treated in the same manner and the part of a resistance part 12a is protruded on each contact of the resistance film 12. After the protruding part is coated with a silicide layer 16, a second interlayer insulating film 17, a barrier metal film 18 and an aluminum electrode 19 are successively formed.

13. 发明专利

JPH04241422A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH04241422A
公开(公告)日：1992-08-28
申请号：JP1842991
申请日：1991-01-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： H01L21/205 , H01L21/316 , H01L21/331 , H01L21/74 , H01L21/76 , H01L29/73 , H01L29/732
摘要： PURPOSE:To improve the operating speed of a semiconductor integrated circuit device incorporating a bipolar type transistor formed in a two-layer polycrystalline silicon structure on a semiconductor substrate by the isoplanar technique by reducing the parasitic junction capacitance of the transistor. CONSTITUTION:In order to reduce the parasitic junction capacitance of a transistor, the unnecessary area of the transistor is reduced by forming parts of an element separating oxide film 19 and another element separating oxide film 19 immediately below an external base area 7b by the SOI technique which uses high-energy oxygen injection so as to cover the side wall sections of the external base area 7b with thermally oxidized films 5.

14. 发明专利

JPH0456232A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0456232A
公开(公告)日：1992-02-24
申请号：JP17080990
申请日：1990-06-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE KIYOTO , KINOSHITA YASUSHI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/732
摘要： PURPOSE:To enable a pnp bipolar transistor to be manufactured together with an npn bipolar transistor by a method wherein the pnp bipolar transistor is formed making use of at least one process out of the processes for the manufacture of the npn bipolar transistor. CONSTITUTION:A pnp bipolar transistor is formed together with an npn bipolar transistor making use of at least one process out of the processes to form the npn bipolar transistor. For example, during the formation process of the base layer of the npn transistor covering the whole surface of a resist film 9, the implantation of BF2 is prevented. Besides, during the formation process of a collector hole and an emitter hole of the npn transistor, a base hole is formed in oxide films 7 and 11 while during the formation process of an emitter layer of the npn transistor, a base leading-out layer 15' is formed. Furthermore, the emitter hole and the collector hole are formed in the oxide films 7 and 11 to implant B applicable to the formation of the base leading-out layer 15 of the npn transistor from said holes so that an emitter leading-out layer 17a and a collector leading-out layer 17b may be formed.

15. 发明专利

JPH01173759A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01173759A
公开(公告)日：1989-07-10
申请号：JP33341487
申请日：1987-12-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI KIYOTERU , ARIMA HIDEAKI , OZAKI KOJI , KINOSHITA YASUSHI , OMORI TOSHIAKI
IPC分类号： H01L21/8247 , G11C17/00 , H01L21/8246 , H01L27/10 , H01L27/112 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To miniaturize a memory cell as well as to simplify its manufacturing process by a method wherein an inverse conductivity type region just under the floating gate of an electrically rewritable nonvolatile semiconductor memory is formed by self-matching. CONSTITUTION:First and second inverse conductivity type regions 2 and 8 provided in a semiconductor substrate 1 in isolation from each other are respectively equivalent to a source and a drain of a transistor. A first electrode layer 5, which is used as a floating gate, is formed on the surface of the region 2 and the surface, which adjoins this region 2, of the substrate 1 through a first insulating film 40 and moreover, a second electrode layer 7, which is used as a control electrode, is formed through a second insulating film 10a. A third electrode layer 9 is provided on the substrate between the regions 2 and 8 through a third insulating film 10b and is used as a gate electrode. A control to the superposition of the layer 5 on the region 2, which is important as a nonvolatile semiconductor memory, is conducted by self matching using the electrode 7. Thereby, a miniaturization of a memory cell and a simplification of its manufacturing process can be attained.

16. 发明专利

JPS6386476A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS6386476A
公开(公告)日：1988-04-16
申请号：JP23205786
申请日：1986-09-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIKAWA KIICHI , KINOSHITA YASUSHI , KOTANI HIDEO , OKAMOTO TATSURO , ONO TAKIO , WATABE KIYOTO
IPC分类号： H01L29/73 , H01L21/331 , H01L29/72
摘要： PURPOSE:To reduce the collector resistance by forming a base electrode drawing layer within a recess in the base layer surface, and providing a construction so that the base layer and the base contact portion of the base electrode become the side wall part of the recess. CONSTITUTION:In a semiconductor integrated circuit device wherein a collector buried layer 5 of the second conductivity type is formed in a semiconductor substrate 1 of the first conductivity type and thereon a collector layer 6, a base layer 14 of the first conductivity type and an emittor layer 30 of the second conductivity type are formed, a recess 17 is formed in the surface of the base layer 14 and a hole section 19 reaching the collector buried layer 5 from a predetermined part of the surface of the device region consisting of the respective layers is formed, a wiring material layer is formed on the surfaces of the recess 17 and the hole section 19, and thereafter performing anisotropic etching, thereby forming a base electrode drawing layer 25 and a collector electrode drawing layer 26 respectively within the recess 17 and the hole section 19. With this, the spacing between the base contact part and the emitter contact part can be made small to reduce the base resistance.

17. 发明专利

JPS6358955A RESISTOR USED IN SEMICONDUCTOR CIRCUIT 失效
公开(公告)号：JPS6358955A
公开(公告)日：1988-03-14
申请号：JP20450786
申请日：1986-08-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： H01L27/04 , H01L21/822
摘要： PURPOSE:To keep the resistance value of a resistor constant in spite of the rise in temperature of a semiconductor chip in which the resistor is formed by a method wherein the first resistor made by an impurity diffusion layer at a semiconductor substrate is connected in series with the second resistor made by a non-single crystal semiconductor film. CONSTITUTION:A resistor is composed of a diffusion resistor made by a p type impurity diffusion layer 7 and a polysilicon film 11 which is connected in series with the p type impurity diffusion layer 7. The polysilicon film 11 is formed in such a way that it is extended on a field oxide film 5 through the first interlayer insulating film 6. The polysilicon film 11 is connected electrically with the p type impurity diffusion layer 7 through a contact hole which is provided on the first interlayer insulating film 6. The diffusion resistor made by the p type impurity diffusion layer 7 increases its resistance value in accordance with the rise in temperature, while the resistor made by the polysilicon film 11 decreases its resistance value in accordance with the rise in temperature. By combining two resistors whose temperature characteristic differs from each other in this manner, it is possible to obtain a resistor whose resistance value does not change in spite of the rise in temperature.

18. 发明专利

JPS61295642A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS61295642A
公开(公告)日：1986-12-26
申请号：JP13861085
申请日：1985-06-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI , ARAKAWA TAKAHIKO , UEDA MASAHIRO
IPC分类号： H01L27/092 , H01L21/3205 , H01L21/82 , H01L21/8238 , H01L23/52 , H01L27/118
摘要： PURPOSE:To reduce FORBIDDEN regions, and to contrive to enhance wiring efficiency at a semiconductor integrated circuit device by a method wherein the gate electrode parts of transistors not being used at a CMOS gate array are used as signal wirings in place of second layer aluminium wirings. CONSTITUTION:A poly-silicon gate 7 is so formed as to make signal lines to be led out from both the edges of the gate thereof, the symbol 2 in the figure is an N type diffusion layer and the symbol 3 is the GND (an aluminium wiring). A signal inputted from a first layer aluminium wiring 4a in the lateral direction passes through a poly-silicon layer connected to the gate contact 7, and transmitted to a first layer aluminium wiring 4e connected to a gate contact 8. Because the gate electrode parts are used like this without using second layer aluminium wirings, no FORBIDDEN region is generated. Accordingly, the second layer aluminium wirings 9a-9e in the longitudinal direction can be used.

19. 发明专利

JP2002278531A INFORMATION-PROVIDING SYSTEM AND INFORMATION-PROVIDING METHOD 失效
公开(公告)号：JP2002278531A
公开(公告)日：2002-09-27
申请号：JP2001072785
申请日：2001-03-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： G06F13/00 , G09G5/00
摘要： PROBLEM TO BE SOLVED: To solve the problem of the possibility of providing unreliable information, since it takes time to update the information of company advertisements or the like in the vehicle of public transport. SOLUTION: Various kinds of the information acquired via a communication network are displayed on a flat type display installed, in the vehicle of the public transport or the like and are provided for passengers.

20. 发明专利

JP2002073144A STOCKED COMPONENT MANAGEMENT SYSTEM BY COMPUTER AND NETWORK 失效
公开(公告)号：JP2002073144A
公开(公告)日：2002-03-12
申请号：JP2000257856
申请日：2000-08-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： B23P21/00 , B65G1/137 , G05B19/418 , G06F19/00 , G06Q10/10
摘要： PROBLEM TO BE SOLVED: To solve the problem that various costs for the stock management of unnecessary components in stock become enormous with time. SOLUTION: Stocked component information is properly received from a component managing warehouse, classified by components, and stored as data in a storage device 6 and specific component introduction information regarding unnecessary components in stock which are extracted from the storage device 6 is generated and sent to another specific device maker 2 through a network 8 outside the company; when the specific device maker 2 makes a request to purchase through the network 8, a component sending instruction sheet is sent to the component managing warehouse 3 and sale processing is performed.

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