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11. 发明授权

US4897149A Method of fabricating single-crystal substrates of silicon carbide 失效
标题翻译：制造碳化硅单晶衬底的方法
公开(公告)号：US4897149A
公开(公告)日：1990-01-30
申请号：US872604
申请日：1986-06-10
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
IPC分类号： C30B25/02 , C30B25/18 , C30B29/36 , H01L21/205
CPC分类号： C30B25/02 , C30B29/36
摘要： A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than .alpha.-SiC, and a single-crystal layer of .alpha.-SiC formed over the substrate member with a ground layer provided between the substrate member and the single-crystal layer, the ground layer comprising a single-crystal layer of nitride of AlN, GaN or Al.sub.x Ga.sub.1-x N (0
摘要翻译：一种碳化硅单晶衬底，其包含除了α-SiC之外的材料的单晶衬底构件，以及形成在衬底构件上的单晶层α-SiC，该衬底构件具有设置在衬底构件和单晶层，所述接地层包括具有六方晶系结构的AlN，GaN或Al x Ga 1-x N（0

12. 发明授权

US5230768A Method for the production of SiC single crystals by using a specific substrate crystal orientation 失效
标题翻译：通过使用特定的衬底晶体取向生产SiC单晶的方法
公开(公告)号：US5230768A
公开(公告)日：1993-07-27
申请号：US845500
申请日：1992-02-28
申请人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
发明人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
IPC分类号： C30B25/02 , C30B25/18
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , Y10S148/148 , Y10S438/931 , Y10S438/973
摘要： There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle .theta. of 5 to 40 degrees, as measured from the [011] direction toward the [011] direction, and a tilt angle .phi. of 1 to 7 degrees, as measured from the [100] direction toward the off-direction; and growing a silicon carbide single crystal on the substrate.
摘要翻译：提供了一种制造碳化硅单晶的方法，其包括以下步骤：提供具有从[100]方向向偏离方向倾斜的晶体取向的生长面的硅单晶衬底，其中从[011]方向向[01＆lt; 1]方向测量的偏离角度θ为5〜40度，倾斜角度为1〜7度，由[100 ]方向朝向偏离方向; 并在衬底上生长碳化硅单晶。

13. 发明授权

US5124779A Silicon carbide semiconductor device with ohmic electrode consisting of alloy 失效
标题翻译：具有欧姆电极的碳化硅半导体器件由合金组成
公开(公告)号：US5124779A
公开(公告)日：1992-06-23
申请号：US601245
申请日：1990-10-17
申请人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
发明人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
IPC分类号： H01L21/285 , H01L21/04 , H01L21/28 , H01L29/24 , H01L29/43 , H01L29/45
CPC分类号： H01L29/1608 , H01L21/0485 , H01L29/45 , H01L29/66068 , H01L2924/0002
摘要： A silicon carbide semiconductor device is disclosed which includes a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode is made of a titanium-aluminum alloy. Also disclosed is a method of producing the silicon carbide semiconductor device.
摘要翻译：公开了一种碳化硅半导体器件，其包括碳化硅单晶层和与碳化硅单晶层接触的至少一个欧姆电极，其中欧姆电极由钛 - 铝合金制成。还公开了一种制造碳化硅半导体器件的方法。

14. 发明授权

US5243204A Silicon carbide light emitting diode and a method for the same 失效
标题翻译：硅碳化硅发光二极管及其相关方法
公开(公告)号：US5243204A
公开(公告)日：1993-09-07
申请号：US702819
申请日：1991-05-17
申请人： Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii
发明人： Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii
IPC分类号： H01L33/00 , H01L33/34
CPC分类号： H01L33/34 , H01L33/0054
摘要： There are provided silicon carbide light emitting diodes having a p-n junction which is constituted by a p-type silicon carbide single-crystal layer and an n-type silicon carbide single-crystal layer formed thereon. In cases where light emission caused by recombination of free excitons is substantially utilized, at least a part of the n-type silicon carbide layer adjacent to the interface of the p-n junction is doped with a donor impurity at a concentration of 5.times.10.sup.16 cm.sup.-3 or lower. In cases where light emission caused by acceptor-associated recombination is substantially utilized, the p-type silicon carbide layer is doped with an acceptor impurity and at least a part of the n-type silicon carbide layer adjacent to the interface of the p-n junction is doped with a donor impurity at a concentration of 1.times.10.sup.18 cm.sup.-3 or higher. Also provided are a method for producing such silicon carbide light emitting diodes and a method for producting another silicon carbide light emitting diode.
摘要翻译：提供了由在其上形成的p型碳化硅单晶层和n型碳化硅单晶层构成的具有p-n结的碳化硅发光二极管。在实质上利用游离激子的重组引起的发光的情况下，与pn结的界面相邻的n型碳化硅层的至少一部分掺杂有浓度为5×10 16 cm -3的施主杂质或降低。在基本上利用由受体相关复合引起的发光的情况下，p型碳化硅层掺杂有受主杂质，并且与pn结的界面相邻的n型碳化硅层的至少一部分为掺杂浓度为1×10 18 cm -3或更高的施主杂质。还提供了这种碳化硅发光二极管的制造方法和制造另一种碳化硅发光二极管的方法。

15. 发明授权

US5329141A Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US5329141A
公开(公告)日：1994-07-12
申请号：US968973
申请日：1992-10-30
申请人： Akira Suzuki , Yoshihisa Fujii , Hajime Saito , Katsuki Furukawa , Yoshimitsu Tajima
发明人： Akira Suzuki , Yoshihisa Fujii , Hajime Saito , Katsuki Furukawa , Yoshimitsu Tajima
IPC分类号： H01L21/205 , H01L33/20 , H01L33/34 , H01L33/40 , H01L33/00
CPC分类号： H01L33/34 , H01L33/0054
摘要： A light emitting diode of silicon carbide having a p-n junction comprising an n-type layer doped with donor impurities, a first p-type layer doped with acceptor impurities, and a second p-type layer doped with acceptor impurities and donor impurities. The first p-type layer has a thickness less than the diffusion length of electrons having flowed from the n-type layer. In this way, the first p-type layer effects light emission related to the acceptor impurities which recombine with the electrons having flowed from the n-type layer, and the second p-type layer effects light emission by donor-acceptor pairs which recombine with the electrons having flowed from the n-type layer.
摘要翻译：一种具有p-n结的碳化硅的发光二极管，其包含掺杂有供体杂质的n型层，掺杂有受主杂质的第一p型层和掺杂有受主杂质和供体杂质的第二p型层。第一p型层的厚度小于从n型层流出的电子的扩散长度。以这种方式，第一p型层实现与从n型层流出的电子重新结合的受主杂质相关的光发射，第二p型层通过供体 - 受体对实现与由电子从n型层流出。

16. 发明授权

US5170231A Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current 失效
标题翻译：具有改善的击穿电压和低漏电流的碳化硅场效应晶体管
公开(公告)号：US5170231A
公开(公告)日：1992-12-08
申请号：US705630
申请日：1991-05-24
申请人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa
发明人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa
IPC分类号： H01L21/04 , H01L29/12 , H01L29/24 , H01L29/78
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/7802 , H01L29/7839
摘要： A silicon carbide field-effect transistor is provided which includes a semiconductor substrate, a channel formation layer of silicon carbide formed above the substrate, source and drain regions provided in contact with the channel formation layer, a gate insulator disposed between the source and drain regions, and a gate electrode formed on the gate insulator, wherein a first contact between the channel formation layer and the drain region exhibits different electric characteristics from those of a second contact between the channel formation layer and the source region. Also provided is a method for producing such a silicon carbide field-effect transistor.
摘要翻译：提供一种碳化硅场效应晶体管，其包括半导体衬底，形成在衬底上方的碳化硅的沟道形成层，与沟道形成层接触设置的源极和漏极区，设置在源极和漏极区之间的栅极绝缘体以及形成在栅极绝缘体上的栅电极，其中沟道形成层和漏极区之间的第一接触表现出与沟道形成层和源极区之间的第二接触的电特性不同的电特性。还提供了制造这种碳化硅场效应晶体管的方法。

17. 发明授权

US5030580A Method for producing a silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件的制造方法
公开(公告)号：US5030580A
公开(公告)日：1991-07-09
申请号：US574487
申请日：1990-08-23
申请人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
发明人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
IPC分类号： H01L21/265 , H01L21/04
CPC分类号： H01L21/046 , Y10S438/931
摘要： A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer is disclosed which includes the steps of: forming a silicon carbide single-crystal layer on a semiconductor substrate or semiconductor bulk single crystal; and implanting the III group of V group element ions in combination with fluorine ions in the silicon carbide single-crystal layer to form a p-type or n-type conductive layer, respectively.
摘要翻译：公开了一种制造具有p型导电层和n型导电层中的至少一种的碳化硅半导体器件的方法，其包括以下步骤：在半导体衬底或半导体体上形成碳化硅单晶层单晶; 并且在碳化硅单晶层中将III族V族元素离子与氟离子组合，分别形成p型或n型导电层。

18. 发明授权

US4897710A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4897710A
公开(公告)日：1990-01-30
申请号：US86490
申请日：1987-08-18
申请人： Akira Suzuki , Katsuki Furukawa , Akitsugu Hatano , Atsuko Uemoto
发明人： Akira Suzuki , Katsuki Furukawa , Akitsugu Hatano , Atsuko Uemoto
IPC分类号： H01L21/205 , H01L21/02 , H01L21/338 , H01L23/14 , H01L29/24 , H01L29/78 , H01L29/812
CPC分类号： H01L29/1608 , H01L23/147 , H01L28/40 , H01L2924/0002
摘要： The semiconductor device comprises a silicon substrate, a boron-doped high resistant silicon carbide layer that is formed on the silicon substrate and a silicon carbide layer formed on the high resistant silicon carbide layer. The silicon carbide layer that is formed on the high resistant silicon carbide layer provides an electrical insulation for the device so that improved device characteristics are obtained.
摘要翻译：半导体器件包括硅衬底，形成在硅衬底上的掺硼高耐磨碳化硅层和形成在耐高压碳化硅层上的碳化硅层。在耐高压碳化硅层上形成的碳化硅层为器件提供电绝缘，从而获得改进的器件特性。

19. 发明授权

US5433167A Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal 失效
标题翻译：使用晶种的升华重结晶法生产碳化硅单晶的方法
公开(公告)号：US5433167A
公开(公告)日：1995-07-18
申请号：US156472
申请日：1993-11-23
申请人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
发明人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
IPC分类号： C30B23/02 , C30B29/36
CPC分类号： C30B23/02 , C30B23/002 , C30B29/36
摘要： There is provided a method of producing a high-quality n-type, 6H silicon carbide single crystal with good reproducibility. A silicon carbide single crystal substrate having a growth orientation of , as a seed crystal, is mounted to an inner surface of a cover of a graphite crucible. A source material includes a high-purity silicon carbide powder having an impurity proportion of not more than 1 ppm and an aluminum powder of 50 ppm relative to the silicon carbide powder. The source material is loaded into the graphite crucible. The graphite crucible is closed with a seed crystal-mounted cover placed in a double quartz tube. Ar gas and N.sub.2 gas are caused to flow in the double quartz tube. Temperature of the silicon carbide powder and aluminum powder is controlled to 2300.degree. C., and temperature of the silicon carbide single crystal substrate to 2200.degree. C.; and interior of the double quartz tube is controlled to 30 torr. Silicon carbide single crystal growth is effected on the seed crystal under these conditions. A high-quality n-type, 6H silicon carbide single crystal is thus obtained which has a uniform crystal structure with little defect, if any, throughout its structure, from the substrate surface to the outermost grown surface, and has a specific resistance of 0.5 .OMEGA.cm.
摘要翻译：提供了一种制造高品质的n型，6H碳化硅单晶，具有良好的再现性的方法。具有生长方向<0001>的碳化硅单晶衬底作为晶种安装在石墨坩埚的盖的内表面上。源材料包括杂质比例不大于1ppm的高纯度碳化硅粉末和相对于碳化硅粉末为50ppm的铝粉末。将原料装入石墨坩埚中。石墨坩埚用放置在双重石英管中的晶种安装的盖封闭。使Ar气和N2气在双重石英管中流动。将碳化硅粉末和铝粉末的温度控制在2300℃，将碳化硅单晶基板的温度控制在2200℃。并将双重石英管的内部控制在30乇。在这些条件下，对晶种进行碳化硅单晶生长。因此获得了高质量的n型6H碳化硅单晶，其具有从基材表面到最外面的生长表面的整个结构中几乎没有缺陷（如果有的话）的均匀晶体结构，并且具有0.5的电阻率欧米茄厘米

20. 发明授权

US4762806A Process for producing a SiC semiconductor device 失效
标题翻译： SiC半导体器件的制造方法
公开(公告)号：US4762806A
公开(公告)日：1988-08-09
申请号：US683801
申请日：1984-12-19
申请人： Akira Suzuki , Katsuki Furukawa
发明人： Akira Suzuki , Katsuki Furukawa
IPC分类号： H01L21/04 , H01L29/24 , H01L29/163 , H01L29/04
CPC分类号： H01L29/1608 , H01L21/02381 , H01L21/02447 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66068 , Y10S438/931
摘要： A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.
摘要翻译：一种制造SiC半导体器件的方法，包括在Si的单晶衬底上生长SiC的单晶膜，并在所述SiC单晶膜上形成二极管，晶体管等半导体器件的结构，从而形成以商业规模获得SiC半导体器件。

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