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1. 发明授权

US4990994A Electrode structure for silicon carbide semiconductors 失效
标题翻译：碳化硅半导体的电极结构
公开(公告)号：US4990994A
公开(公告)日：1991-02-05
申请号：US403016
申请日：1989-09-05
申请人： Katsuki Furukawa , Akira Suzuki , Mitsuhiro Shigeta , Atsuko Uemoto
发明人： Katsuki Furukawa , Akira Suzuki , Mitsuhiro Shigeta , Atsuko Uemoto
IPC分类号： H01L29/43 , H01L21/28 , H01L29/24 , H01L29/45 , H01L33/34 , H01L33/40
CPC分类号： H01L29/1608 , H01L29/45
摘要： An electrode structure for a silicon carbide single-crystal semiconductor in which the surface of the silicon carbide single-crystal is laminated with a metal layer of titanium, aluminum, chromium or molybdenum, or with the metal layer and an electrically conductive protective layer formed over the metal layer to provide an ohmic electrode.
摘要翻译：一种用于碳化硅单晶半导体的电极结构，其中碳化硅单晶的表面层叠有钛，铝，铬或钼的金属层，或与金属层和导电保护层形成的金属层金属层提供欧姆电极。

2. 发明授权

US4897149A Method of fabricating single-crystal substrates of silicon carbide 失效
标题翻译：制造碳化硅单晶衬底的方法
公开(公告)号：US4897149A
公开(公告)日：1990-01-30
申请号：US872604
申请日：1986-06-10
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
IPC分类号： C30B25/02 , C30B25/18 , C30B29/36 , H01L21/205
CPC分类号： C30B25/02 , C30B29/36
摘要： A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than .alpha.-SiC, and a single-crystal layer of .alpha.-SiC formed over the substrate member with a ground layer provided between the substrate member and the single-crystal layer, the ground layer comprising a single-crystal layer of nitride of AlN, GaN or Al.sub.x Ga.sub.1-x N (0
摘要翻译：一种碳化硅单晶衬底，其包含除了α-SiC之外的材料的单晶衬底构件，以及形成在衬底构件上的单晶层α-SiC，该衬底构件具有设置在衬底构件和单晶层，所述接地层包括具有六方晶系结构的AlN，GaN或Al x Ga 1-x N（0

3. 发明授权

US5184199A Silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件
公开(公告)号：US5184199A
公开(公告)日：1993-02-02
申请号：US533573
申请日：1990-06-05
申请人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
发明人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
IPC分类号： H01L21/205 , H01L29/24 , H01L29/78 , H01L29/786
CPC分类号： H01L29/1608 , H01L29/78684
摘要： A silicon carbide semiconductor device is disclosed which includes a semiconductor substrate and a silicon carbide single-crystal layer formed above the substrate, the silicon carbide single-crystal layer having a device active region. The silicon carbide semiconductor device further includes an aluminum nitride single-crystal layer which is disposed between the silicon carbide single-crystal layer and the substrate. The aluminum nitride single-crystal layer functions as an electrically insulating layer by which the silicon carbide signale-crystal layer is isolated electrically from the substrate.
摘要翻译：公开了一种碳化硅半导体器件，其包括在衬底上形成的半导体衬底和碳化硅单晶层，所述碳化硅单晶层具有器件有源区。碳化硅半导体器件还包括设置在碳化硅单晶层和衬底之间的氮化铝单晶层。氮化铝单晶层用作电绝缘层，通过该绝缘层，碳化硅信号晶体层与衬底电隔离。

4. 发明授权

US5279701A Method for the growth of silicon carbide single crystals 失效
标题翻译：碳化硅单晶生长方法
公开(公告)号：US5279701A
公开(公告)日：1994-01-18
申请号：US933964
申请日：1992-08-24
申请人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii
发明人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii
IPC分类号： C30B25/02 , C30B25/18 , C30B23/02
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , Y10S148/148 , Y10S438/931 , Y10S438/973
摘要： A method for the growth of silicon carbide single crystals is disclosed which includes the step of growing silicon carbide single crystals on a silicon single-crystal substrate. The silicon single-crystal substrate has growth areas with a crystal orientation inclined by an angle .theta. from the [100] direction toward at least one of the [011] and [011] directions and with a lateral dimension d taken along the direction of such inclination toward the [011] or [011] direction. The angle .theta. is set to be in the range of zero to tan.sup.-1 (.sqroot.2/8) degrees (with the proviso that the angle .theta. is not equal to tan.sup.-1 (.sqroot.2/2) degrees). The lateral dimension d is set to be in the range of 0.1 to 100 .mu.m. In this method, the silicon carbide single crystals are grown to a thickness t approximately equal to or greater than (.sqroot.2+tan.theta.)d/.vertline.1-.sqroot.2tan.theta..vertline., so that these silicon carbide single crystals are substantially free of defects such as stacking faults.
摘要翻译：公开了一种用于生长碳化硅单晶的方法，其包括在硅单晶衬底上生长碳化硅单晶的步骤。硅单晶衬底具有晶体取向从（100）方向朝向（011）和（011）方向中的至少一个方向倾斜角度（θ）的生长区域，并且沿着方向朝向（011）或（011）方向倾斜。角度（θ）设定为零到tan-1（（平方根）2/8）度的范围（条件是角度（θ）不等于tan-1（（平方根） 2/2）度）。横向尺寸d设定在0.1到100（my）m的范围内。在该方法中，碳化硅单晶生长至大致等于或大于（（平方根）2 + tan（θ））d // 1-（平方根）2tan（θ）/的厚度t，使得这些碳化硅单晶基本上没有诸如堆垛层错的缺陷。

5. 发明授权

US5135885A Method of manufacturing silicon carbide FETS 失效
标题翻译：制造碳化硅FET的方法
公开(公告)号：US5135885A
公开(公告)日：1992-08-04
申请号：US499889
申请日：1990-03-27
申请人： Katsuki Furukawa , Yoshihisa Fujii , Mitsuhiro Shigeta , Akira Suzuki
发明人： Katsuki Furukawa , Yoshihisa Fujii , Mitsuhiro Shigeta , Akira Suzuki
IPC分类号： H01L21/04 , H01L29/24 , H01L29/786 , H01L29/812
CPC分类号： H01L29/1608 , H01L21/0445 , H01L29/78684 , H01L29/8126 , Y10S438/931
摘要： A method of manufacturing a semiconductor device comprises the steps of (i) forming a SiC monocrystal layer over the entire surface of a semiconductor substrate; (ii) forming a boron ion implanted layer, which is substantially a thin film, by implanting a specified amount of boron ions in the surface region of the SiC monocrystal layer; and (iii) forming a high resistance SiC monocrystal layer of a thin film by subjecting the boron ion implanted layer to heat treatment; whereby the high resistance SiC monocrystal layer can be function at least as an electric insulating layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（i）在半导体衬底的整个表面上形成SiC单晶层; （ii）通过在SiC单晶层的表面区域中注入规定量的硼离子形成基本上为薄膜的硼离子注入层; 和（iii）通过对硼离子注入层进行热处理来形成薄膜的高电阻SiC单晶层; 由此，高电阻SiC单晶层至少可以作为电绝缘层起作用。

6. 发明授权

US5319220A Silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件
公开(公告)号：US5319220A
公开(公告)日：1994-06-07
申请号：US895452
申请日：1992-06-08
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii , Atsuko Ogura
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii , Atsuko Ogura
IPC分类号： H01L29/24 , H01L29/737 , H01L31/0312 , H01L33/34 , H01L29/161 , H01L21/20
CPC分类号： H01L33/34 , H01L29/1608 , H01L29/7371 , H01L31/0312 , Y10S438/931
摘要： A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a .beta.-type silicon carbide layer having an .alpha.-type silicon carbide layer disposed thereon.
摘要翻译：提供了一种碳化硅半导体器件，其包括由两种不同的碳化硅多型材组成的至少一个异质结。异质结中的碳化硅的两种多型体包括其上设置有α型碳化硅层的β型碳化硅层。

7. 发明授权

US4865659A Heteroepitaxial growth of SiC on Si 失效
标题翻译： SiC在Si上的异质外延生长
公开(公告)号：US4865659A
公开(公告)日：1989-09-12
申请号：US124732
申请日：1987-11-24
申请人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii , Akitsugu Hatano , Atsuko Uemoto , Kenji Nakanishi
发明人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii , Akitsugu Hatano , Atsuko Uemoto , Kenji Nakanishi
IPC分类号： C30B25/02 , C30B25/18
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , Y10S148/029 , Y10S148/072 , Y10S148/097 , Y10S148/148 , Y10S438/938
摘要： A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.
摘要翻译：异质外延生长方法包括通过化学气相沉积在与半导体单晶膜的晶格常数不同的半导体单晶衬底上生长半导体单晶膜，半导体单晶膜的外延取向倾斜相对于半导体单晶衬底以一定角度。

8. 发明授权

US5387804A Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US5387804A
公开(公告)日：1995-02-07
申请号：US944794
申请日：1992-09-14
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
IPC分类号： H01L29/78 , H01L33/00 , H01L33/20 , H01L33/32 , H01L33/34 , H01L29/161 , H01L29/20 , H01L29/22
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/34
摘要： A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga.sub.x Al.sub.1-x N, 0
摘要翻译：公开了一种发光二极管，其包括由碳化硅（SIC）组成的至少一个异质结和从氮化镓（GAN），氮化铝（AlN）和氮化镓铝（GaxAl1-xN，O

9. 发明授权

US5216264A Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact 失效
标题翻译：通过使用肖特基接触形成具有源极和漏极区域中的至少一个的碳化硅MOS型场效应晶体管
公开(公告)号：US5216264A
公开(公告)日：1993-06-01
申请号：US759933
申请日：1991-09-16
申请人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
发明人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
IPC分类号： H01L29/24 , H01L29/78
CPC分类号： H01L29/1608 , H01L29/7839 , H01L2924/0002
摘要： A silicon carbide field-effect transistor is disclosed which includes an MOS structure composed successively of a silicon carbide layer, a gate insulator film, and a gate electrode. The field-effect transistor has source and drain regions formed in the silicon carbide layer, between which the MOS structure is disposed, wherein at least one of the source and drain regions is formed by the use of a Schottky contact on the silicon carbide layer.
摘要翻译：公开了一种碳化硅场效应晶体管，其包括依次由碳化硅层，栅绝缘膜和栅电极组成的MOS结构。场效应晶体管具有形成在碳化硅层中的源极和漏极区域，其间设置有MOS结构，其中源极和漏极区域中的至少一个通过在碳化硅层上使用肖特基接触形成。

10. 发明授权

US5063421A Silicon carbide light emitting diode having a pn junction 失效
标题翻译：具有pn结的碳化硅发光二极管
公开(公告)号：US5063421A
公开(公告)日：1991-11-05
申请号：US390600
申请日：1989-08-07
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
IPC分类号： H01L33/34 , H01L33/40
CPC分类号： H01L33/343 , H01L33/0054
摘要： A silicon carbide light emitting diode having a pn junction is disclosed which comprises a semiconductor substrate, a first silicon carbide single-crystal layer of one conductivity formed on the substrate, and a second silicon carbide single-crystal layer of the opposite conductivity formed on the first silicon carbide layer, the first and second silicon carbide layers constituting the pn junction, wherein at least one of the first and second silicon carbide layers contains a tetravalent transition element as a luminescent center.
摘要翻译：公开了一种具有pn结的碳化硅发光二极管，其包括半导体衬底，形成在衬底上的一种导电性的第一碳化硅单晶层和形成在衬底上的相反电导率的第二碳化硅单晶层第一碳化硅层，构成pn结的第一和第二碳化硅层，其中第一和第二碳化硅层中的至少一个含有四价过渡元素作为发光中心。

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