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    • 11. 发明授权
    • Method for etching silicon oxynitride and inorganic antireflection
coatings
    • 蚀刻氮氧化硅和无机抗反射涂层的方法
    • US6013582A
    • 2000-01-11
    • US986911
    • 1997-12-08
    • Pavel IonovSung Ho KimDean Li
    • Pavel IonovSung Ho KimDean Li
    • H01L21/302H01L21/027H01L21/3065H01L21/3213H01L21/44
    • H01L21/32139H01L21/0276
    • The present disclosure pertains to a method for plasma etching a semiconductor patterning stack. The patterning stack includes at least one layer comprising either a dielectric-comprising antireflective material or an oxygen-comprising material. In many instances the dielectric-comprising antireflective material will be an oxygen-comprising material, but it need not be limited to such materials. In one preferred embodiment of the method, the chemistry enables the plasma etching of both a layer of the dielectric-comprising antireflective material or oxygen-comprising material and an adjacent or underlying layer of material. In another preferred embodiment of the method, the layer of dielectric-comprising antireflective material or oxygen-comprising material is etched using one chemistry, while the adjacent or underlying layer is etched using another chemistry, but in the same process chamber. Of particular interest is silicon oxynitride, an oxygen-comprising material which functions as an antireflective material. A preferred embodiment of the method provides for the use of a source of carbon and an appropriate halogen-comprising plasma, to achieve selective etch of one oxygen-containing material compared with another material which contains a more limited amount of oxygen.
    • 本公开涉及用于等离子体蚀刻半导体图案化叠层的方法。 图案化叠层包括至少一层,其包括含电介质的抗反射材料或含氧材料。 在许多情况下,包含电介质的抗反射材料将是含氧材料,但不限于此类材料。 在该方法的一个优选实施方案中,该化学物质能够对包含电介质的抗反射材料或含氧材料的层和相邻或下层材料进行等离子体蚀刻。 在该方法的另一个优选实施方案中,使用一种化学方法蚀刻包含电介质的抗反射材料层或含氧材料层,而使用另一种化学物质在相同的处理室中蚀刻相邻层或下层。 特别令人感兴趣的是氧氮化硅,其作为抗反射材料起作用的含氧材料。 该方法的优选实施方案提供了使用碳源和合适的含卤素等离子体,与含有更多有限量的氧气的另一种材料相比,可实现一种含氧材料的选择性蚀刻。