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    • 11. 发明申请
    • Optical Transmission/Reception Equipment And Optical Transmission/Reception Module
    • 光传输/接收设备和光传输/接收模块
    • US20070297809A1
    • 2007-12-27
    • US11767798
    • 2007-06-25
    • Takeshi OkadaShinji Tsuji
    • Takeshi OkadaShinji Tsuji
    • H04B10/00
    • H04B10/40
    • The present invention provides a method for connecting an optical transmission/reception module and a circuit board in order to reduce electrical crosstalk effectively in single-fiber bidirectional optical transmission/reception equipment. The optical transmission/reception equipment includes an optical transmission/reception module which has at least one transmission subassembly with a built-in light-emitting device, one or a plurality of reception subassemblies each having a built-in light-receiving device, and a housing for fixing the transmission subassembly and the reception subassembly/subassemblies, and a circuit board on which an electronic device is mounted. At least one stem base part constituting a stem/stems of the reception subassembly/subassemblies and a stem base part constituting a stem of the transmission subassembly are directly connected to a ground pattern of the circuit board.
    • 本发明提供了一种用于连接光发送/接收模块和电路板的方法,以便在单纤双向光传输/接收设备中有效降低电串扰。 光发送/接收设备包括具有至少一个具有内置发光装置的传输子组件的光发送/接收模块,每个具有内置光接收装置的一个或多个接收子组件,以及 用于固定传输子组件和接收子组件/组件的壳体,以及安装有电子设备的电路板。 构成接收子组件/子组件的杆/杆的至少一个杆基座部分和构成变速器子组件的杆的杆基部直接连接到电路板的接地图案。
    • 15. 发明授权
    • Semiconductor laser devices
    • 半导体激光器件
    • US4841536A
    • 1989-06-20
    • US850685
    • 1986-04-11
    • Aiko OhishiMotohisa HiraoNaoki ChinoneShinji TsujiHitoshi NakamuraHiroyoshi Matsumura
    • Aiko OhishiMotohisa HiraoNaoki ChinoneShinji TsujiHitoshi NakamuraHiroyoshi Matsumura
    • H01S5/227
    • H01S5/227H01S5/2275
    • This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.
    • 本发明公开了一种能够通过形成具有反三角台面形状的有源层的台面条形状的高温高输出操作的半导体激光器,在台面条的两侧形成厚半导体层,使得所得到的pn 结点具有电流阻塞功能。 本发明还公开了一种半导体激光器,其中在形成反向台面条之前进行上述p-n结的形成,并且引入离子注入以形成p-n结。 此外,本发明涉及使用InGaAsP型四元化合物作为半导体的晶体管和半导体激光器。 形成其能带隙为1.2〜1.4eV的组成的四元化合物的厚度为1μm以下,可以得到漏电流小且时间稳定的半导体器件。
    • 17. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4426700A
    • 1984-01-17
    • US260744
    • 1981-05-05
    • Motohisa HiraoAtsutoshi DoiMichiharu NakamuraShinji TsujiTakao Mori
    • Motohisa HiraoAtsutoshi DoiMichiharu NakamuraShinji TsujiTakao Mori
    • H01S5/00H01S5/227H01S3/19
    • H01S5/227H01S5/2275
    • A buried-heterostructure semiconductor laser including a mesa-shaped optical confinement region having an active layer and a clad layer and disposed on a semiconductor substrate; a burying layer burying both side surfaces of the region; and at least one p-n junction so formed inside the burying layer in parallel to the active layer as to be brought under the reversely biased state during the operation of the laser; wherein surface protection semiconductor layers are formed on the mesa-shaped optical confinement region and on the burying layer, respectively, for protecting the semiconductor assembly in the arrangement such that these surface protection semiconductor layers do not come into direct contact with each other. Even if the forbidden band gas of these surface protection semiconductor layers are relatively small, it is possible to realize a semiconductor laser having an extremely small leakage current and reduced variance of threshold current values, while protecting the surface of the multi-layer semiconductor layers.
    • 一种掩埋异质结构半导体激光器,包括具有有源层和覆层的台面形状的光限制区域,并设置在半导体衬底上; 埋藏在该区域的两个侧表面上的掩埋层; 以及在激光器的工作过程中平行于活性层在掩埋层内部形成的至少一个p-n结,使其处于反向偏置状态; 其中表面保护半导体层分别形成在台状光限制区域和掩埋层上,用于保护半导体组件的布置,使得这些表面保护半导体层不彼此直接接触。 即使这些表面保护半导体层的禁带宽度相对较小,也可以在保护多层半导体层的表面的同时实现具有极小的漏电流和减小阈值电流值的方差的半导体激光器。