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11. 发明申请

US20110135844A1 LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING 有权
标题翻译：大面积等离子体加工室与电极射频匹配
公开(公告)号：US20110135844A1
公开(公告)日：2011-06-09
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/24 , C23C16/455 , C23C16/458 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

12. 发明申请

US20100089319A1 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体加工室的RF返回路径
公开(公告)号：US20100089319A1
公开(公告)日：2010-04-15
申请号：US12576991
申请日：2009-10-09
申请人： Carl A. Sorensen , John M. White , Jozef Kudela , Jonghoon Baek , Jriyan Jerry Chen , Steve McPherson , Soo Young Choi , Robin L. Tiner
发明人： Carl A. Sorensen , John M. White , Jozef Kudela , Jonghoon Baek , Jriyan Jerry Chen , Steve McPherson , Soo Young Choi , Robin L. Tiner
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件，衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。

13. 发明申请

US20090197015A1 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：US20090197015A1
公开(公告)日：2009-08-06
申请号：US12344210
申请日：2008-12-24
申请人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： C23C16/513
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.
摘要翻译：系统，方法和装置包括用于在基板上沉积膜的等离子体处理室。等离子体处理室包括具有接地板，背板和存在于接地板和背板之间的不均匀性的盖组件。不均匀性可能会干扰RF波均匀性，并导致接地板和背板的部分之间的阻抗不平衡。不均匀性可以包括非均匀表面的结构或减小的间隔。存在不均匀表面的减小的间隔，其中在第一端处的接地板和背板之间的第一距离在第二端处不同于接地板和背板之间的第二距离。该结构可以是2cm至10cm厚，覆盖背板的20％至50％，并且位于远离存在于腔室内的不连续处。

14. 发明授权

US08691047B2 Large area plasma processing chamber with at-electrode RF matching 有权
标题翻译：大面积等离子体处理室，具有电极RF匹配
公开(公告)号：US08691047B2
公开(公告)日：2014-04-08
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/505 , H01L21/3065
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

15. 发明申请

US20090159423A1 Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
标题翻译：等离子室电极的非对称RF驱动
公开(公告)号：US20090159423A1
公开(公告)日：2009-06-25
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/00 , H01L21/3065 , B23H7/14
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

16. 发明授权

US09382621B2 Ground return for plasma processes 有权
标题翻译：等离子体工艺的接地回路
公开(公告)号：US09382621B2
公开(公告)日：2016-07-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

17. 发明授权

US08728586B2 RF choke for gas delivery to an RF driven electrode in a plasma processing apparatus 有权
标题翻译：射频扼流圈，用于将气体输送到等离子体处理装置中的RF驱动电极
公开(公告)号：US08728586B2
公开(公告)日：2014-05-20
申请号：US12172029
申请日：2008-07-11
申请人： Jozef Kudela , Carl A. Sorensen , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , John M. White
IPC分类号： H05H1/46
CPC分类号： H01F17/06 , C23C16/455 , C23C16/505 , H01F27/08 , H01F2017/065 , H01J37/32082 , H01J37/3244 , H01J2237/0206 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
摘要翻译：在大面积等离子体处理系统中，工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。接地的气体供给管与喷头电气隔离。气体供给管不仅可以提供处理气体，还可以提供从远程等离子体源清洁气体到处理室。气体供给管的内部可以保持在低RF场或零RF场，以避免气体进料管内的过早气体击穿，这可能导致气体源和喷头之间的寄生等离子体形成。通过馈送气体通过RF扼流圈，RF场和处理气体可以通过公共位置被引入处理室，从而简化室设计。

18. 发明授权

US08343592B2 Asymmetrical RF drive for electrode of plasma chamber 有权
标题翻译：等离子体室用电极的非对称RF驱动
公开(公告)号：US08343592B2
公开(公告)日：2013-01-01
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/24 , H01L21/306 , C23C16/00
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

19. 发明申请

US20090022905A1 RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS 有权
标题翻译： RF选择用于气体输送到等离子体处理装置中的RF驱动电极
公开(公告)号：US20090022905A1
公开(公告)日：2009-01-22
申请号：US12172029
申请日：2008-07-11
申请人： Jozef Kudela , Carl A. Sorensen , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , John M. White
IPC分类号： C23C16/455
CPC分类号： H01F17/06 , C23C16/455 , C23C16/505 , H01F27/08 , H01F2017/065 , H01J37/32082 , H01J37/3244 , H01J2237/0206 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
摘要翻译：在大面积等离子体处理系统中，工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。接地的气体供给管与喷头电气隔离。气体供给管不仅可以提供处理气体，还可以提供从远程等离子体源清洁气体到处理室。气体供给管的内部可以保持在低RF场或零RF场，以避免气体进料管内的过早气体击穿，这可能导致气体源和喷头之间的寄生等离子体形成。通过馈送气体通过RF扼流圈，RF场和处理气体可以通过公共位置被引入处理室，从而简化室设计。

20. 发明授权

US07570130B2 Apparatus and methods for a fixed impedance transformation network for use in connection with a plasma chamber 有权
标题翻译：用于与等离子体室结合使用的固定阻抗变换网络的装置和方法
公开(公告)号：US07570130B2
公开(公告)日：2009-08-04
申请号：US11179036
申请日：2005-07-11
申请人： Carl A. Sorensen , John M. White , Suhail Anwar
发明人： Carl A. Sorensen , John M. White , Suhail Anwar
IPC分类号： H03H5/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： In certain embodiments, an apparatus for providing a fixed impedance transformation network for driving a plasma chamber includes a pre-match network adapted to couple between an Active RF match network and a plasma chamber load associated with the plasma chamber. The pre-match network includes (1) a first capacitive element; (2) an inductive element connected in parallel with the first capacitive element to form a parallel circuit that presents a stepped-up impedance to an output of the Active RF match network such that a voltage required to drive the plasma chamber load is reduced; and (3) a second capacitive element coupled to the parallel circuit and adapted to couple to the plasma chamber load. The second capacitive element reduces or cancels at least in part a reactance corresponding to an inductance associated with the plasma chamber load. Numerous other aspects are provided.
摘要翻译：在某些实施例中，用于提供用于驱动等离子体室的固定阻抗变换网络的装置包括适于在有源RF匹配网络和与等离子体室相关联的等离子体室负载之间耦合的预匹配网络。预匹配网络包括（1）第一电容元件; （2）与所述第一电容元件并联连接的电感元件，以形成并联电路，所述并联电路向所述有源RF匹配网络的输出提供升压阻抗，使得驱动所述等离子体室负载所需的电压降低; 和（3）耦合到并联电路并且适于耦合到等离子体室负载的第二电容元件。第二电容元件至少部分地减小或抵消与等离子体室负载相关联的电感的电抗。提供了许多其他方面。

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