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11. 发明授权

US06479876B1 Vertical power MOSFET 有权
标题翻译：垂直功率MOSFET
公开(公告)号：US06479876B1
公开(公告)日：2002-11-12
申请号：US09462759
申请日：2000-10-12
申请人： Gerald Deboy , Jenoe Tihanyi
发明人： Gerald Deboy , Jenoe Tihanyi
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/167 , H01L29/32
摘要： The invention relates to a vertical power MOSFET having additional column-like zones (11, 12) which are arranged in an inner zone (1) and have the same and the opposite conductivity type as/to the inner zone (1). The charge carrier life is reduced in the additional zones (12), which are of the same conductivity type as the inner zone (1), and the inner zone (1) is dimensioned such that the space charge zone does not reach the junction between the inner zone and a drain zone.
摘要翻译：本发明涉及具有附加的柱状区域（11,12）的垂直功率MOSFET，其布置在内部区域（1）中并且具有与内部区域（1）相同的导电类型。在与内部区域（1）具有相同导电类型的附加区域（12）中减少电荷载体寿命，并且内部区域（1）的尺寸被设计成使得空间电荷区域不会到达内部区域和排水区域。

12. 发明授权

US06365919B1 Silicon carbide junction field effect transistor 有权
标题翻译：碳化硅结场效应晶体管
公开(公告)号：US06365919B1
公开(公告)日：2002-04-02
申请号：US09530622
申请日：2000-07-11
申请人： Jenoe Tihanyi , Heinz Mitlehner , Wolfgang Bartsch
发明人： Jenoe Tihanyi , Heinz Mitlehner , Wolfgang Bartsch
IPC分类号： H01L310312
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/0634 , H01L29/1608 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/66068 , H01L29/7838
摘要： A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a principal surface of the silicon carbide body and penetrate the layers. The source and drain trenches are filled with silicon carbide of one conductivity type, whereas the trench for the gate is filled with silicon carbide of a conductivity type that is different from the source and the drain.
摘要翻译：横向碳化硅结场效应晶体管具有p导电和n导电碳化硅层。这些层在碳化硅体中沿横向成对设置。用于源极，漏极和栅极的沟槽从碳化硅本体的主表面延伸并穿透层。源极和漏极沟槽填充有一种导电类型的碳化硅，而用于栅极的沟槽填充有不同于源极和漏极的导电类型的碳化硅。

13. 发明授权

US06326656B1 Lateral high-voltage transistor 有权
标题翻译：横向高压晶体管
公开(公告)号：US06326656B1
公开(公告)日：2001-12-04
申请号：US09511813
申请日：2000-02-24
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L2972
CPC分类号： H01L29/7816 , H01L29/0623 , H01L29/0634
摘要： A lateral high-voltage transistor has a semiconductor body made of a lightly doped semiconductor substrate of a first conductivity type and an epitaxial layer of a second conductivity type. The epitaxial layer is provided on the semiconductor substrate. The lateral high-voltage transistor has a drain electrode, a source electrode, a gate electrode and a semiconductor zone of the first conductivity type which is provided under the gate electrode and is embedded in the epitaxial layer. Between the source electrode and the drain electrode trenches are provided in lines and rows in the semiconductor layer. The walls of the trenches are highly doped with dopants of the first conductivity type.
摘要翻译：横向高压晶体管具有由第一导电类型的轻掺杂半导体衬底和第二导电类型的外延层制成的半导体本体。外延层设置在半导体衬底上。横向高压晶体管具有漏极电极，源极电极，栅极电极和第一导电类型的半导体区域，其设置在栅电极下方并嵌入在外延层中。在源电极和漏电极沟槽之间设置有半导体层中的行和列。沟槽的壁被高掺杂有第一导电类型的掺杂剂。

14. 发明授权

US06184545B2 Semiconductor component with metal-semiconductor junction with low reverse current 有权
标题翻译：具有低反向电流的金属半导体结的半导体元件
公开(公告)号：US06184545B2
公开(公告)日：2001-02-06
申请号：US09152827
申请日：1998-09-14
申请人： Wolfgang Werner , Jenoe Tihanyi
发明人： Wolfgang Werner , Jenoe Tihanyi
IPC分类号： H01L2974
CPC分类号： H01L29/861 , H01L29/0619 , H01L29/0634 , H01L29/872
摘要： The semiconductor component, such as a Schottky diode with a low leakage current, has a metal-semiconductor junction between a first metal electrode and the semiconductor. The semiconductor, which is of a first conductivity type, has a defined drift path and a plurality of supplementary zones of a second conductivity type extending from the semiconductor surface into the drift path. A number of foreign atoms in the supplementary zones is substantially equal to a number of foreign atoms in intermediate zones surrounding the supplementary zones and the number of foreign atoms does not exceed a number corresponding to a breakdown charge of the semiconductor.
摘要翻译：诸如具有低漏电流的肖特基二极管的半导体元件在第一金属电极和半导体之间具有金属 - 半导体结。具有第一导电类型的半导体具有限定的漂移路径和从半导体表面延伸到漂移路径中的第二导电类型的多个补充区。补充区域中的多个外来原子基本上等于在补充区域周围的中间区域中的多个外来原子，并且外来原子的数量不超过对应于半导体的击穿电荷的数量。

15. 发明授权

US5986441A Circuit configuration for capturing the load current of a power semiconductor component with a load on the source side 有权
标题翻译：用于捕获源极侧的负载的功率半导体部件的负载电流的电路配置
公开(公告)号：US5986441A
公开(公告)日：1999-11-16
申请号：US250869
申请日：1999-02-16
申请人： Adam-Istvan Koroncai , Jenoe Tihanyi
发明人： Adam-Istvan Koroncai , Jenoe Tihanyi
IPC分类号： G01R19/165 , G05F1/573
CPC分类号： G01R19/16519
摘要： The circuit configuration captures the load current of a field effect-controllable power semiconductor component. The drain and gate terminals of a further field effect-controllable semiconductor component are connected to the drain and gate terminals, respectively, of the first semiconductor component. A fraction of the load current flows through the further semiconductor component. The load current of the further semiconductor component is set as a function of the drain-to-source voltage of the two semiconductor components. The load current flowing through the further semiconductor component is compared with a reference current and an output signal is generated if the load current falls below a set value.
摘要翻译：电路配置捕获场效应可控功率半导体元件的负载电流。另外的场效应可控半导体元件的漏极和栅极端子分别连接到第一半导体部件的漏极和栅极端子。一部分负载电流流过另外的半导体元件。另外的半导体部件的负载电流被设定为两个半导体部件的漏极 - 源极电压的函数。将流过另外的半导体部件的负载电流与参考电流进行比较，并且如果负载电流低于设定值，则产生输出信号。

16. 发明授权

US5923066A Field-effect-controllable semiconductor component 失效
标题翻译：场效应可控半导体元件
公开(公告)号：US5923066A
公开(公告)日：1999-07-13
申请号：US940473
申请日：1997-09-30
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L29/10 , H01L29/739 , H01L29/78 , H01L29/87
CPC分类号： H01L29/1095 , H01L29/7391 , H01L29/7397
摘要： A field-effect-controllable semiconductor component includes a semiconductor body with first and second surfaces. An inner zone of a first conduction type adjoins the first surface. An anode zone of the opposite, second conduction type adjoins the inner zone in the direction of the first surface and adjoins the second surface in the opposite direction. At least one first base zone of the second conduction type is embedded in the first surface. At least one source zone of the first conduction type is embedded in the first surface. At least one source electrode makes contact with the base zones and the source zones. At least one gate electrode is insulated from the semiconductor body and the source electrode by a gate oxide and at least partly covers parts of the first base zones appearing at the first surface. Intermediate cell zones contain the source zones. Trenches enclose the intermediate cell zones and are insulated from the intermediate cell zones by a gate oxide. Gate electrode pins in the trenches are connected to the gate electrode running on the first surface.
摘要翻译：场效应可控半导体部件包括具有第一和第二表面的半导体本体。第一导电类型的内部区域与第一表面相邻。相对的第二导电类型的阳极区域在第一表面的方向上与内部区域相邻，并且在相反方向上与第二表面相邻。第二导电类型的至少一个第一基区被嵌入在第一表面中。第一导电类型的至少一个源极区被嵌入在第一表面中。至少一个源极与基极区和源极区接触。至少一个栅电极通过栅极氧化物与半导体本体和源电极绝缘，并且至少部分地覆盖出现在第一表面处的第一基区的部分。中间单元区域包含源区域。沟槽包围中间细胞区域，并通过栅极氧化物与中间细胞区域绝缘。沟槽中的栅电极引脚连接到在第一表面上运行的栅电极。

17. 发明授权

US5900775A MOSFET with temperature protection 失效
标题翻译： MOSFET具有温度保护功能
公开(公告)号：US5900775A
公开(公告)日：1999-05-04
申请号：US859923
申请日：1997-05-21
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L27/02 , G05F1/10
CPC分类号： H01L27/0248
摘要： The MOSFET of the invention has a switching element connected between its gate and its source. The switching element causes a reduction of the gate-to-source voltage of the MOSFET. The switching element is driven via a diode, which is connected in the blocking direction between the drain of the MOSFET and a control terminal of the switching element.
摘要翻译：本发明的MOSFET具有连接在其栅极和源极之间的开关元件。开关元件导致MOSFET的栅极 - 源极电压降低。开关元件通过在MOSFET的漏极和开关元件的控制端之间的阻挡方向连接的二极管驱动。

18. 发明授权

US5815027A Circuit configuration for detecting a load current of a power semiconductor component with a source-side load 失效
标题翻译：用于检测源极侧负载的功率半导体部件的负载电流的电路结构
公开(公告)号：US5815027A
公开(公告)日：1998-09-29
申请号：US660500
申请日：1996-06-07
申请人： Jenoe Tihanyi , Adam-Istvan Koroncai
发明人： Jenoe Tihanyi , Adam-Istvan Koroncai
IPC分类号： G01R1/20 , G01R19/00 , G05F1/10 , G05F3/24 , G01R19/165
CPC分类号： G05F3/24 , G01R1/203 , G01R19/0092 , H03K17/145 , H03K2217/0027
摘要： A field-effect-controllable power semiconductor component has a drain terminal, a source terminal, a gate terminal, a drain-to-source voltage and a load current. A circuit configuration for detecting the load current of the power semiconductor component includes a further field-effect-controllable semiconductor component through which a fraction of the load current flows. The further semiconductor component has a drain terminal connected to the drain terminal of the power semiconductor component, a gate terminal connected to the gate terminal of the power semiconductor component, a source terminal and a drain-to-source voltage. A resistor at which a voltage proportional to the load current can be picked up, is connected to a fixed potential terminal. A controllable resistor is connected between the resistor and the source terminal of the further semiconductor component. The controllable resistor adjusts the current of the further semiconductor component so that the drain-to-source voltages of the power semiconductor component and the further semiconductor component are equal to one another.
摘要翻译：场效应可控功率半导体元件具有漏极端子，源极端子，栅极端子，漏极 - 源极电压和负载电流。用于检测功率半导体部件的负载电流的电路结构包括另外的场效应可控半导体部件，一部分负载电流通过该半导体部件流动。另外的半导体部件具有连接到功率半导体部件的漏极端子的漏极端子，连接到功率半导体部件的栅极端子的栅极端子，源极端子和漏极到源极电压。可以拾取与负载电流成比例的电压的电阻器连接到固定电位端子。可控电阻器连接在电阻器和另一半导体部件的源极端子之间。可控电阻调节另外的半导体元件的电流，使得功率半导体元件和另外的半导体元件的漏 - 源电压彼此相等。

19. 发明授权

US5672893A Protective configuration against electrostatic discharges in semiconductor components controllable by field effect 失效
标题翻译：通过场效应控制的半导体元件中的静电放电的保护配置
公开(公告)号：US5672893A
公开(公告)日：1997-09-30
申请号：US590931
申请日：1996-01-24
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/78 , H01L23/62 , H01L27/07
CPC分类号： H01L27/0259 , H01L2924/0002
摘要： A configuration for protecting a first semiconductor component being controllable by field effect against electrostatic discharges, includes a voltage-limiting, protective, second semiconductor component being connected to the gate terminal of the first semiconductor component. The second semiconductor component is an integrated bipolar transistor having a collector-to-emitter path being connected between the drain terminal and the gate terminal of the first semiconductor component.
摘要翻译：用于保护由静电放电效应控制的第一半导体部件的结构包括连接到第一半导体部件的栅极端子的限压保护的第二半导体部件。第二半导体部件是集成极 - 发射极路径连接在第一半导体部件的漏极端子和栅极端子之间的集成双极型晶体管。

20. 发明授权

US5434521A Integrated comparator circuit 失效
标题翻译：集成比较电路
公开(公告)号：US5434521A
公开(公告)日：1995-07-18
申请号：US978637
申请日：1992-11-19
申请人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi
发明人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi
IPC分类号： G01R19/165 , H03K5/08 , H03K17/30 , H03K17/687 , H03K5/153
CPC分类号： H03K17/6872 , G01R19/16519 , H03K17/302
摘要： An integrated comparator circuit includes two complementary MOSFETs having main current paths being connected together in a series circuit at a connecting point. An inverter stage has two complementary MOSFETs with gate terminals connected to the connecting point. First, second and third terminals are provided. The first and second terminals are for an operating voltage, and the second and third terminals are for a voltage to be compared. The series circuit is connected between the first and third terminals, and the inverter stage is connected between the first and second terminals. One of the MOSFETs of the series circuit connected to the first terminal and one of the MOSFETs of the inverter stage connected to the first terminal are of the same channel type. The other of the MOSFETs of the series circuit connected to the third terminal and the other of the MOSFETs of the inverter stage connected the second terminal are of the same channel type.
摘要翻译：集成比较器电路包括两个互补MOSFET，其中主电流路径在连接点处串联在一起连接在一起。反相器级具有两个互补MOSFET，栅极端子连接到连接点。首先，提供第二和第三终端。第一和第二端子用于工作电压，第二和第三端子用于比较电压。串联电路连接在第一和第三端子之间，变频器级连接在第一和第二端子之间。连接到第一端子的串联电路的MOSFET之一和连接到第一端子的反相器级的MOSFET之一具有相同的通道类型。连接到第三端子的串联电路的另一个MOSFET和连接到第二端子的反相器级的另一个MOSFET具有相同的通道类型。

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