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11. 发明授权

US08066529B2 Condenser connector for vehicle 有权
标题翻译：汽车冷凝器连接器
公开(公告)号：US08066529B2
公开(公告)日：2011-11-29
申请号：US12758372
申请日：2010-04-12
申请人： Ji Hyoung Kim , Jong Wook Lee , Jong Hyun Lee , Sung Ho Heo
发明人： Ji Hyoung Kim , Jong Wook Lee , Jong Hyun Lee , Sung Ho Heo
IPC分类号： H01R13/66
CPC分类号： H01R13/4364 , H01R13/533 , H01R2201/26
摘要： Disclosed herein is a condenser connector for a vehicle, in which a condenser is installed at a position which is nearest or virtually nearest to a noise source, thus effectively eliminating or reducing noise. The condenser connector includes a housing having an insertion part. One end of a terminal is connected to a wire, and the other end thereof is fitted into and secured to one end of the insertion part. A holder is fitted into and secured to the other end of the insertion part. A condenser has a contact terminal which is in contact with the terminal, and is mounted to the holder.
摘要翻译：这里公开了一种用于车辆的冷凝器连接器，其中冷凝器安装在离噪声源最近或实际上最靠近的位置，从而有效地消除或减少噪声。冷凝器连接器包括具有插入部分的壳体。端子的一端与导线连接，另一端嵌入并固定在插入部的一端。保持器装配并固定到插入部分的另一端。冷凝器具有与端子接触的接触端子，并且安装到保持器。

12. 发明授权

US06194256B1 Method for fabricating CMOS device 有权
标题翻译：制造CMOS器件的方法
公开(公告)号：US06194256B1
公开(公告)日：2001-02-27
申请号：US09340427
申请日：1999-06-28
申请人： Jong Wook Lee , Gyu Seog Cho
发明人： Jong Wook Lee , Gyu Seog Cho
IPC分类号： H01L21336
CPC分类号： H01L21/84 , H01L27/1203
摘要： Disclosed is a method for fabricating CMOS device using a SOI substrate, and more particularly the method for fabricating CMOS device capable of improving mobility of electron and hole. The present invention provides a method for fabricating CMOS device comprising the steps of: providing an SOI substrate having a stacking structure of a base layer, a buried oxide layer and a semiconductor layer, wherein the SOI substrate is divided into a first region where a PMOS is formed later and a second region where an NMOS is formed later; forming first field oxide films to be contacted with the buried oxide layer by applying a thermal oxidation to a selected portion of the semiconductor layer being disposed in the first region of the SOI substrate; forming trenches with a depth to be contacted with the buried oxide layer in a selected portion of the semiconductor layer being disposed in the second region of the SOI substrate and then forming second field oxide films by filling the trenches with an insulating layer; and forming the PMOS in the portion of the semiconductor layer being defined by those first field oxide films, and the NMOS in the portion of the semiconductor layer being defined by those second field oxide films.
摘要翻译：公开了一种使用SOI衬底制造CMOS器件的方法，更具体地说，涉及一种能够改善电子和空穴的迁移率的CMOS器件的制造方法。本发明提供了一种制造CMOS器件的方法，包括以下步骤：提供具有基底层，掩埋氧化物层和半导体层的堆叠结构的SOI衬底，其中SOI衬底被分成第一区域，其中PMOS 稍后形成NMOS，稍后形成NMOS的第二区域; 通过对设置在所述SOI衬底的所述第一区域中的所述半导体层的选定部分施加热氧化来形成与所述掩埋氧化物层接触的第一场氧化物膜; 在半导体层的选定部分中形成具有与掩埋氧化物层接触的深度的沟槽，其设置在SOI衬底的第二区域中，然后通过用绝缘层填充沟槽来形成第二场氧化膜; 并且在半导体层的由第一场氧化物膜定义的部分中形成PMOS，半导体层的部分中的NMOS由那些第二场氧化物膜限定。

13. 发明授权

US06166412A SOI device with double gate and method for fabricating the same 有权
公开(公告)号：US06166412A
公开(公告)日：2000-12-26
申请号：US470529
申请日：1999-12-22
申请人： Hyung Ki Kim , Jong Wook Lee
发明人： Hyung Ki Kim , Jong Wook Lee
IPC分类号： H01L21/02 , H01L21/336 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/76 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/66772 , H01L29/42384 , H01L29/4908 , H01L29/78648
摘要： A silicon-on-insulator (SOI) device having a double gate, comprising: a supporting substrate; a first insulating layer formed over the supporting substrate; a first silicon layer formed over the first insulating layer, the first silicon layer including a first impurity region of a first conductivity disposed in a central portion thereof and intrinsic regions disposed at the both sides of the first impurity region; a second insulating layer formed over the first silicon layer; a second silicon layer formed over the second insulating layer, the second silicon layer including a second impurity region of a second conductivity disposed in a central portion thereof and third impurity regions of first conductivities disposed at the both sides of the second impurity region; a third insulating layer formed over the second impurity region; and a polysilicon layer doped with impurity ions of first conductivities, formed over the third insulating layer.

14. 发明授权

US5932370A Group of winding electrodes 失效
标题翻译：组绕组电极
公开(公告)号：US5932370A
公开(公告)日：1999-08-03
申请号：US872307
申请日：1997-06-10
申请人： Jin Dong Cheong , Jong Wook Lee , Sung Suk Chae
发明人： Jin Dong Cheong , Jong Wook Lee , Sung Suk Chae
IPC分类号： H01M4/06 , H01G9/02 , H01G9/048 , H01M2/14 , H01M2/18 , H01M6/02 , H01M10/04 , H01M10/28 , H01M10/34 , H01M6/10
CPC分类号： H01G9/02 , H01M10/0431 , H01M10/345 , H01M2/14 , Y10T29/49108
摘要： A cell having a separator with pores prevents short-circuiting of the anode and cathode while increasing the internal space of the cell, increasing the injection volume of electrolyte, and decreasing internal gas pressures for longer durability.
摘要翻译：具有孔的隔膜的电池防止阳极和阴极的短路，同时增加电池的内部空间，增加电解液的注入体积，并降低内部气体压力以获得更长的耐久性。

15. 发明授权

US07982803B2 Audio and video synchronizing apparatus and method 有权
标题翻译：音视频同步装置及方法
公开(公告)号：US07982803B2
公开(公告)日：2011-07-19
申请号：US11401798
申请日：2006-04-10
申请人： Jong Wook Lee
发明人： Jong Wook Lee
IPC分类号： H04N7/54 , H04N5/06
CPC分类号： H04N5/775 , H04N5/04
摘要： Provided is an audio video synchronizing apparatus and method in a video processing equipment. It is detected whether or not an external device connected to an audio/video output port of the video processing equipment is an audio system, and an audio signal synchronized with a video signal outputted to a display device of the video processing equipment is provided to the audio system through an audio output port when the detection result shows that the external device is the audio system. Accordingly, a vide signal on a screen is synchronized with an audio signal outputted from the audio system.
摘要翻译：提供了一种视频处理设备中的音频视频同步装置和方法。检测连接到视频处理设备的音频/视频输出端口的外部设备是否是音频系统，并且将与输出到视频处理设备的显示设备的视频信号同步的音频信号提供给音频系统通过音频输出端口，当检测结果显示外部设备是音频系统时。因此，屏幕上的视频信号与从音频系统输出的音频信号同步。

16. 发明申请

US20110132338A1 IGNITION COIL FOR AN ENGINE 审中-公开
标题翻译：发动机点火线圈
公开(公告)号：US20110132338A1
公开(公告)日：2011-06-09
申请号：US12814773
申请日：2010-06-14
申请人： Ji Hyoung Kim , Jong Wook Lee , Kyung Sick Cho , Ki Su Lim
发明人： Ji Hyoung Kim , Jong Wook Lee , Kyung Sick Cho , Ki Su Lim
IPC分类号： H01F38/12
CPC分类号： H01F38/12 , F02D2400/21 , F02P13/00
摘要： The present invention features an ignition coil for an engine, in which a small-sized condenser is directly installed in an LV pin (low voltage pin) of the ignition coil and efficiently removes noises, is disclosed. In preferred embodiments, the ignition coil includes an outer casing defining the appearance of the ignition coil, a first spool inserted in the outer casing and having a second spool therein, an LV pin installed in an upper portion of the first spool, and a condenser installed in the LV pin.
摘要翻译：本发明的特征在于一种用于发动机的点火线圈，其中小型冷凝器直接安装在点火线圈的LV引脚（低压引脚）中并有效地去除噪声。在优选实施例中，点火线圈包括限定点火线圈外观的外壳，插入外壳中的第一线轴和其中具有第二阀芯的第一阀芯，安装在第一阀芯上部的LV销和冷凝器安装在LV针脚上。

17. 发明授权

US06680053B2 Variable region of the monoclonal antibody against the HBV S-surface antigen and a gene encoding the same 失效
标题翻译：针对HBV S表面抗原的单克隆抗体的可变区和编码其的基因
公开(公告)号：US06680053B2
公开(公告)日：2004-01-20
申请号：US09865483
申请日：2001-05-29
申请人： Jong Wook Lee , In Young Ko , Heui Keun Kang , Jung Hyun Nam , Moo Young Song , Hyung Jin Moon , Tae Hun Song
发明人： Jong Wook Lee , In Young Ko , Heui Keun Kang , Jung Hyun Nam , Moo Young Song , Hyung Jin Moon , Tae Hun Song
IPC分类号： A61K3942
CPC分类号： C07K16/082 , C07K2317/565
摘要： The present invention relates to a variable region of the monoclonal antibody against the S-surface antigen of hepatis B virus and a gene encoding the same, a recombinant vector containing the said gene, and a transformant obtained from the said recombinant vector.
摘要翻译：本发明涉及针对乙型肝炎病毒的S表面抗原的单克隆抗体的可变区和编码该抗体的基因，含有所述基因的重组载体和从所述重组载体获得的转化体。

18. 发明授权

US06545008B1 Pyrimidine derivatives and processes for the preparation thereof 失效
标题翻译：嘧啶衍生物及其制备方法
公开(公告)号：US06545008B1
公开(公告)日：2003-04-08
申请号：US09856048
申请日：2001-05-17
申请人： Jong Wook Lee , Bong Yong Lee , Chang Seop Kim , Seung Kyu Lee , Song Jin Lee
发明人： Jong Wook Lee , Bong Yong Lee , Chang Seop Kim , Seung Kyu Lee , Song Jin Lee
IPC分类号： C07D40104
CPC分类号： C07D401/04
摘要： The present invention relates to novel pyrimidine derivatives and pharmaceutically acceptable non-toxic salts thereof which possess an excellent inhibitory activity against gastric acid secretion, a pharmaceutical composition containing the same as an active ingredient, and a process for the preparation thereof.
摘要翻译：本发明涉及对胃酸分泌具有优异抑制活性的新型嘧啶衍生物及其药学上可接受的无毒性盐，其含有活性成分的药物组合物及其制备方法。

19. 发明授权

US06429074B2 Semiconductor memory device and method for fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06429074B2
公开(公告)日：2002-08-06
申请号：US09964420
申请日：2001-09-28
申请人： Jong Wook Lee , Gyu Seog Cho
发明人： Jong Wook Lee , Gyu Seog Cho
IPC分类号： H01L21336
CPC分类号： H01L27/1203 , H01L27/1082
摘要： A method for fabricating a semiconductor memory device using a silicon-on-insulator device, including forming a semiconductor memory device capable of reducing the topology between a cell region and a peripheral region and preventing floating body effect.
摘要翻译：一种使用绝缘体上硅器件制造半导体存储器件的方法，包括形成能够减小单元区域与周边区域之间的拓扑结构并防止浮体效应的半导体存储器件。

20. 发明授权

US06352872B1 SOI device with double gate and method for fabricating the same 有权
标题翻译：具有双栅极的SOI器件及其制造方法
公开(公告)号：US06352872B1
公开(公告)日：2002-03-05
申请号：US09712705
申请日：2000-11-14
申请人： Hyung Ki Kim , Jong Wook Lee
发明人： Hyung Ki Kim , Jong Wook Lee
IPC分类号： H01L21338
CPC分类号： H01L29/66772 , H01L29/42384 , H01L29/4908 , H01L29/78648
摘要： A silicon-on-insulator (SOI) device having a double gate, comprising: a supporting substrate; a first insulating layer formed over the supporting substrate; a first silicon layer formed over the first insulating layer, the first silicon layer including a first impurity region of a first conductivity disposed in a central portion thereof and intrinsic regions disposed at the both sides of the first impurity region; a second insulating layer formed over the first silicon layer; a second silicon layer formed over the second insulating layer, the second silicon layer including a second impurity region of a second conductivity disposed in a central portion thereof and third impurity regions of first conductivities disposed at the both sides of the second impurity region; a third insulating layer formed over the second impurity region; and a polysilicon layer doped with impurity ions of first conductivities, formed over the third insulating layer.
摘要翻译：一种具有双栅极的绝缘体上硅（SOI）器件，包括：支撑衬底; 形成在所述支撑基板上的第一绝缘层; 形成在所述第一绝缘层上的第一硅层，所述第一硅层包括设置在所述第一绝缘层的中心部分的第一导电性的第一杂质区和设置在所述第一杂质区两侧的本征区; 形成在所述第一硅层上的第二绝缘层; 形成在所述第二绝缘层上的第二硅层，所述第二硅层包括布置在其中心部分的具有第二导电性的第二杂质区和设置在所述第二杂质区两侧的第一导电性的第三杂质区; 形成在第二杂质区上的第三绝缘层; 以及在第三绝缘层上形成掺杂有第一导电性的杂质离子的多晶硅层。

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