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11. 发明授权

US08053353B2 Method of making connections in a back-lit circuit 有权
标题翻译：在背光电路中进行连接的方法
公开(公告)号：US08053353B2
公开(公告)日：2011-11-08
申请号：US12431439
申请日：2009-04-28
申请人： François Roy
发明人： François Roy
IPC分类号： H01L21/4763
CPC分类号： H01L27/14689 , H01L21/76898 , H01L23/481 , H01L27/14636 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： A method for forming, on a surface of a thinned-down semiconductor substrate, a contact connected to a metal track of an interconnect stack formed on the opposite surface of the thinned-down substrate, including the steps of: forming, on the side of a first surface of a substrate, an insulating region penetrating into the substrate and coated with a conductive region and with an insulating layer crossed by conductive vias, the vias connecting a metal track of the interconnect stack to the conductive region; gluing the external surface of the interconnect stack on a support and thinning down the substrate; etching the external surface of the thinned-down substrate and stopping on the insulating region; etching the insulating region and stopping on the conductive region; and filling the etched opening with a metal.
摘要翻译：在薄型半导体衬底的表面上形成连接到形成在薄型衬底的相对表面上的互连叠层的金属轨道的接触的方法，包括以下步骤：在衬底的第一表面，穿透到衬底中并涂覆有导电区域并且具有由导电通孔交叉的绝缘层的绝缘区域，将互连叠层的金属轨道连接到导电区域的通孔; 将互连叠层的外表面胶合在支撑件上并使基板变薄; 蚀刻薄的衬底的外表面并停止在绝缘区上; 蚀刻绝缘区域并停止在导电区域上; 并用金属填充蚀刻开口。

12. 发明授权

US07642579B2 Image sensor comprising pixels with one transistor 有权
标题翻译：图像传感器包括具有一个晶体管的像素
公开(公告)号：US07642579B2
公开(公告)日：2010-01-05
申请号：US11713903
申请日：2007-03-05
申请人： Arnaud Tournier , François Roy
发明人： Arnaud Tournier , François Roy
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14601 , H01L27/1463 , H01L27/14654
摘要： A pixel having a MOS-type transistor formed in and above a semiconductor substrate of a first doping type, a buried semiconductor layer of a second doping type being placed in the substrate under the MOS transistor and separated therefrom by a substrate portion forming a well. The buried semiconductor layer comprises a thin portion forming a pinch area placed under the transistor channel area and a thick portion placed under all or part of the source/drain areas of the transistor.
摘要翻译：形成在第一掺杂型半导体衬底中和上方的MOS型晶体管的像素，第二掺杂类型的掩埋半导体层被放置在MOS晶体管下方的衬底中，并由形成阱的衬底部分分离。掩埋半导体层包括形成位于晶体管沟道区域下方的夹紧区域的薄部分和放置在晶体管的源极/漏极区域全部或部分之下的厚部分。

13. 发明授权

US06858828B2 Photocell incorporating a lightguide and matrix composed of such photocells 有权
标题翻译：光电池结合了光导和由这种光电池组成的矩阵
公开(公告)号：US06858828B2
公开(公告)日：2005-02-22
申请号：US10246804
申请日：2002-09-18
申请人： François Roy , Thierry Devoivre , Yann Marcellier
发明人： François Roy , Thierry Devoivre , Yann Marcellier
IPC分类号： H01L27/146 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14627
摘要： A photocell having an entry face for the light and a photosensitive element, as well as to a matrix composed of such photocells. A lightguide-forming element placed between the entry face and the photosensitive element of the photocell ensures optical coupling between the latter two components. It makes it possible to place on either side of the photosensitive element electronic components for reading and for controlling the photocell, while reducing the loss of light incident on the entry face corresponding to the rays which would strike these electronic components. This lightguide-forming element is composed of at least three dielectric materials having different respective optical refractive indices and placed within concentric volumes.
摘要翻译：具有用于光的入射面和感光元件的光电管，以及由这种光电池组成的矩阵。放置在光电元件的入射面和感光元件之间的光导形成元件确保后两个部件之间的光耦合。它可以放置在用于读取和控制光电元件的感光元件电子部件的两侧，同时减少入射到入射面上的光的损失，该入射面对应于将撞击这些电子部件的光线。该光导形成元件由具有不同相应光折射率的至少三个电介质材料组成并且被放置在同心体积内。

14. 发明授权

US08937341B2 Two-phase charge-coupled device 有权
标题翻译：两相电荷耦合器件
公开(公告)号：US08937341B2
公开(公告)日：2015-01-20
申请号：US12821807
申请日：2010-06-23
申请人： François Roy
发明人： François Roy
IPC分类号： H01L29/80 , H01L29/768 , H01L27/148
CPC分类号： H01L29/76808 , H01L27/14812 , H01L29/76841
摘要： A charge-coupled unit formed in a semiconductor substrate and including an array of identical electrodes forming rows and columns, wherein: each electrode extends in a cavity with insulated walls formed of a groove, oriented along a row, dug into the substrate thickness, and including, at one of its ends, a protrusion extending towards at least one adjacent row.
摘要翻译：一种电荷耦合单元，其形成在半导体衬底中并且包括形成行和列的相同电极的阵列，其中：每个电极在空腔中延伸，所述绝缘壁由沿着行定向的凹槽形成，被切割成衬底厚度，以及包括在其一端的朝向至少一个相邻行延伸的突起。

15. 发明授权

US08853755B2 Image sensor pixel circuit 有权
标题翻译：图像传感器像素电路
公开(公告)号：US08853755B2
公开(公告)日：2014-10-07
申请号：US12889537
申请日：2010-09-24
申请人： Frédéric Barbier , François Roy
发明人： Frédéric Barbier , François Roy
IPC分类号： H01L31/113 , H04N5/365 , H01L27/146 , H04N5/378 , H04N5/3745
CPC分类号： H04N5/378 , H01L27/14609 , H01L27/1463 , H01L27/14683 , H04N5/365 , H04N5/3745
摘要： A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.
摘要翻译：图像传感器的像素电路包括用于存储从一个或多个光电二极管传送的电荷的感测节点，源极跟随器晶体管，其栅极耦合到感测节点，其源极节点通过读取耦合到像素电路的输出线晶体管，其中源极跟随器晶体管的体接触连接到输出线。

16. 发明授权

US08643063B2 Multidirectional two-phase charge-coupled device 有权
标题翻译：多向两相电荷耦合器件
公开(公告)号：US08643063B2
公开(公告)日：2014-02-04
申请号：US12821785
申请日：2010-06-23
申请人： François Roy
发明人： François Roy
IPC分类号： H01L29/80
CPC分类号： H01L29/76841 , H01L27/14812 , H01L29/76808
摘要： A charge transfer device formed in a semiconductor substrate and including an array of electrodes distributed in rows and columns, wherein: each electrode is formed in a cavity with insulated walls formed of a groove which generally extends in the row direction, having a first end closer to an upper row and a second end closer to a lower row; and the electrodes of two adjacent rows are symmetrical with respect to a plane orthogonal to the sensor and comprising the direction of a row.
摘要翻译：一种电荷转移装置，形成在半导体衬底中并且包括分布在行和列中的电极阵列，其中：每个电极形成在具有绝缘壁的空腔中，所述绝缘壁由大致沿行方向延伸的凹槽形成，具有第一端更靠近到更靠近下排的上排和第二端; 并且两个相邻行的电极相对于与传感器正交的平面对称并且包括行的方向。

17. 发明授权

US08193479B2 Very small image sensor 有权
标题翻译：非常小的图像传感器
公开(公告)号：US08193479B2
公开(公告)日：2012-06-05
申请号：US12429413
申请日：2009-04-24
申请人： François Roy , Benoît Ramadout
发明人： François Roy , Benoît Ramadout
IPC分类号： H01L27/00 , H01L31/101
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/14641 , H01L27/14643
摘要： An image sensor formed in a semiconductor stack of a lower region of a first conductivity type and of an upper region of a second conductivity type, including: a photodiode formed of a first portion of the stack; a read area formed of a second portion of the stack; a trench with insulated walls filled with a conductive material, the trench surrounding the photodiode and the read area and being interrupted, all along its height, on a portion facing the photodiode and the read area; and first connection mechanism associated with the conductive material of the trench and capable of being connected to a reference bias voltage.
摘要翻译：一种形成在第一导电类型的下区域和第二导电类型的上区域的半导体堆叠中的图像传感器，包括：由所述堆叠的第一部分形成的光电二极管; 由堆叠的第二部分形成的读取区域; 具有填充有导电材料的绝缘壁的沟槽，围绕光电二极管和读取区域的沟槽，并且全部沿其高度中断面对光电二极管和读取区域的部分; 以及与沟槽的导电材料相关联并且能够连接到参考偏置电压的第一连接机构。

18. 发明授权

US08030774B2 Imaging device equipped with a last copper and aluminum based interconnection level 有权
标题翻译：成像设备配备了最后一个基于铜和铝的互连级别
公开(公告)号：US08030774B2
公开(公告)日：2011-10-04
申请号：US11961202
申请日：2007-12-20
申请人： François Roy
发明人： François Roy
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L23/53223 , H01L23/53238 , H01L24/05 , H01L27/14636 , H01L27/14643 , H01L2224/02166 , H01L2224/05624 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01058 , H01L2924/01074 , H01L2924/01082 , H01L2924/05042 , H01L2924/12043 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A microelectronic device may include a substrate, a plurality of components on the substrate, an insulating layer adjacent the substrate, and a plurality of metallic interconnection levels within the insulating layer and for the plurality of components. The plurality of metallic interconnection levels may include at least one given metallic level including a plurality of conductive lines of a first metallic material, and at least one other metallic level adjacent the at least one given metallic level. The at least one other metallic level may include at least one conductive zone of the first metallic material and coupled to at least one of the plurality of conductive lines of the at least one given metallic level, and at least one other conductive zone of a second metallic material and coupled to at least one other of the plurality of conductive lines of the at least one given metallic level.
摘要翻译：微电子器件可以包括衬底，衬底上的多个部件，与衬底相邻的绝缘层，以及绝缘层和多个部件内的多个金属互连级别。多个金属互连级别可以包括至少一个给定的金属级，包括第一金属材料的多条导电线，以及与至少一个给定金属层相邻的至少一个其它金属级。所述至少一个其它金属层可以包括所述第一金属材料的至少一个导电区并且耦合到所述至少一个给定金属水平的所述多个导电线中的至少一个，以及第二金属层的至少一个其它导电区金属材料并且耦合到至少一个给定金属水平的多个导电线中的至少另一个。

19. 发明申请

US20100182474A1 IMAGE CAPTURE DEVICE COMPRISING PIXEL COMBINATION MEANS 审中-公开
标题翻译：包含像素组合装置的图像捕获装置
公开(公告)号：US20100182474A1
公开(公告)日：2010-07-22
申请号：US12690730
申请日：2010-01-20
申请人： Hervé Mingam , François Roy
发明人： Hervé Mingam , François Roy
IPC分类号： H04N5/335
CPC分类号： H04N5/37457 , H04N5/2254 , H04N5/347 , H04N9/045
摘要： An image capture device includes n image sensors arranged to capture images respectively of a same scene according to at least three different colors, each of the sensors comprising a pixel array, each pixel being associated with a MOS transfer transistor, the transfer transistors of n neighboring pixels being associated with a same output; and a read circuit associated with control circuitry for reading separately, the output of each transfer transistor, or cumulatively, the outputs of from two to n neighboring transfer transistors.
摘要翻译：图像捕获装置包括n个图像传感器，其被布置为根据至少三种不同的颜色分别捕获相同场景的图像，每个传感器包括像素阵列，每个像素与MOS传输晶体管相关联，n个相邻的传输晶体管像素与相同的输出相关联; 以及与控制电路相关联的读取电路，用于单独读取每个传输晶体管的输出，或者累加地从两个相邻的传输晶体管的输出。

20. 发明授权

US07279729B2 Photodetector array 有权
标题翻译：光电检测器阵列
公开(公告)号：US07279729B2
公开(公告)日：2007-10-09
申请号：US10849094
申请日：2004-05-19
申请人： François Roy
发明人： François Roy
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/14632 , H01L27/14636
摘要： A photodetector array made in monolithic form, in which transistors are formed in a semiconductor substrate coated with several metallization levels and photodiodes are formed above a last metallization level, each photodiode having an upper region of a first conductivity type common to all photodiodes and an individual lower region forming a junction with the upper region in contact with a metallization of the last level, wherein each lower region is separated from the neighboring lower regions by an insulating material and is connected to the metallization through a via formed in at least one insulating layer.
摘要翻译：在最后的金属化水平上形成以单体形式制成的光电检测器阵列，其中晶体管形成在涂覆有若干金属化水平的半导体衬底和光电二极管中，每个光电二极管具有所有光电二极管共同的第一导电类型的上部区域和个体下部区域与上部区域形成与最后一层的金属化接触的结，其中每个下部区域通过绝缘材料与相邻的下部区域分离，并且通过在至少一个绝缘层中形成的通孔连接到金属化层。

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