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    • 12. 发明授权
    • Developing solution and method for developing an exposed silver halide
photographic material
    • US5593817A
    • 1997-01-14
    • US594144
    • 1996-01-31
    • Freddy HenderickxAnn VerbeeckPascal MeeusHieronymus Andriessen
    • Freddy HenderickxAnn VerbeeckPascal MeeusHieronymus Andriessen
    • G03C5/29G03C5/30G03C5/305G03C5/31G03C5/38G03C8/36
    • G03C8/365G03C5/30G03C5/305G03C5/31G03C5/383
    • A photographic developing solution and a method of developing silver halide materials in the said developing solution is disclosed, the said developing solution comprising hydroquinone in an amount from 0 to 30 g per litre, an auxiliary developer, and silver halide complexing agents in an amount from 0 to 50 g per litre, characterized in that said developer further comprisesin amounts from 0.1 to 5 g per litre a compound corresponding to the formula (I), accompanied by charge compensating anions,Z'N.sup.+ --R--N.sup.+ Z" (I)wherein at least divalent group R contains at least one oxyethylene group and wherein Z' and Z", being the same or different, are composed of enough atoms to form a heterocyclic aromatic 5- or 6-ring;andat least 1 g of a compound corresponding to the formula (II), a precursor thereof, a derivative thereof and/or a metal salt thereof ##STR1## wherein each of A, B and D independently represents an oxygen atom or NR.sup.1 ;X represents an oxygen atom, a sulphur atom, NR.sup.2 ; CR.sup.3 R.sup.4 ;C=O; C=NR.sup.5 or C=S;Y represents an oxygen atom, a sulphur atom, NR.sup.'2 ; CR.sup.'3 R.sup.'4 ; C=O, C=NR.sup.'5 or C=S;Z represents an oxygen atom, a sulphur atom, NR.sup."2 ; CR.sup."3 R.sup."4 ; C=O; C=NR.sup."5 or C=S;n equals 0, 1 or 2;each of R.sup.1 to R.sup.5, R.sup.'1 to R.sup.'5 and R.sup."1 to R.sup."5 independently represents hydrogen, alkyl, aralkyl, hydroxyalkyl, carboxyalkyl; alkenyl, alkynyl, cycloalkyl, cycloalkenyl, aryl or heterocyclyl;and whereinR.sup.3 and R.sup.4, R.sup.'3 and R.sup.'4, R.sup."3 and R.sup."4, may further form together a ring; andwherein in the case that X=CR.sup.3 R.sup.4 and Y=CR.sup.'3 R.sup.'4, R.sup.3 and R.sup.'3 and/or R.sup.4 and R.sup.'4 may form a ring and wherein in the case that Y=CR.sup.'3 R.sup.'4 and Z=CR.sup."3 R.sup."4 with n=1 or 2, R.sup.'3 and R.sup."3 and/or R.sup.'4 and R.sup."4 may form a ring.
    • 18. 发明申请
    • Nano-porous metal oxide semiconductor spectrally sensitized with metal oxide chalcogenide nano-particles
    • 用金属氧化物硫族化物纳米粒子光谱增感的纳米多孔金属氧化物半导体
    • US20050269616A1
    • 2005-12-08
    • US11186440
    • 2005-07-21
    • Hieronymus Andriessen
    • Hieronymus Andriessen
    • B32B9/00H01G9/20H01L31/00H01L31/0352H01L31/119
    • H01G9/2031H01L31/0352Y02E10/542
    • A nano-porous metal oxide semiconductor with a band-gap of greater than 2.9 eV in-situ spectrally sensitized on its internal and external surface with metal chalcogenide nano-particles with a band-gap of less than 2.9 eV containing at least one metal chalcogenide, wherein the nano-porous metal oxide further contains a phosphoric acid or a phosphate; and a process for in-situ spectral sensitization of nano-porous metal oxide semiconductor with a band-gap of greater than 2.9 eV on its internal and external surface with metal chalcogenide nano-particles with a band-gap of less than 2.9 eV, containing at least one metal chalcogenide, comprising a metal chalcogenide-forming cycle comprising the steps of: contacting nano-porous metal oxide with a solution of metal ions; contacting nano-porous metal oxide with a solution of chalcogenide ions; and subsequent to metal chalcogenide formation rinsing the nano-porous metal oxide with an aqueous solution containing a phosphoric acid or a phosphate.
    • 具有大于2.9eV的带隙大于2.9eV的纳米多孔金属氧化物半导体在其内部和外部表面上原位光致敏化,其中金属硫族化物纳米颗粒具有小于2.9eV的带隙,其含有至少一种金属硫族化物 其中所述纳米多孔金属氧化物还含有磷酸或磷酸盐; 以及具有小于2.9eV的带隙的金属硫属元素化物纳米粒子在其内表面和外表面上具有大于2.9eV的带隙的纳米多孔金属氧化物半导体的现场光谱增感的方法,其包含 至少一种金属硫族化物,其包含金属硫族化物形成循环,包括以下步骤:使纳米多孔金属氧化物与金属离子溶液接触; 使纳米多孔金属氧化物与硫属元素离子的溶液接触; 并且在金属硫族化物形成之后,用含磷酸或磷酸盐的水溶液冲洗纳米多孔金属氧化物。
    • 19. 发明申请
    • Process for preparing a substantially transparent conductive layer configuration
    • 制备基本上透明的导电层构型的方法
    • US20050042556A1
    • 2005-02-24
    • US10645160
    • 2003-08-21
    • Frank LouwetTom ClootsHieronymus Andriessen
    • Frank LouwetTom ClootsHieronymus Andriessen
    • H01B1/12H01B1/22H01L51/00H01L51/30H01L51/52H05K3/10G03C1/46
    • H05K3/106H01B1/127H01B1/22H01L51/0021H01L51/0037H01L51/445H01L51/5203H05K2201/0329Y02E10/549
    • A process for preparing a substantially transparent conductive layer configuration on a support, the layer configuration comprising in any order at least a first layer containing an intrinsically conductive polymer optionally containing structural units represented by formula (I): wherein n is larger than 1 and each of R1 and R2 independently represents hydrogen or an optionally substituted C1-4 alkyl group or together represent an optionally substituted C1-4 alkylene group or an optionally substituted cycloalkylene group, preferably an ethylene group, an optionally alkyl-substituted methylene group, an optionally C1-12 alkyl- or phenyl-substituted ethylene group, a 1,3-propylene group or a 1,2-cyclohexylene group; and a second layer consisting of a non-continuous layer of conductive silver, the process comprising the step of: preparing the second layer by a photographic process; and light emitting diodes, photovoltaic devices, transistors and electroluminescent devices comprising a layer configuration prepared according to this process.
    • 一种用于在载体上制备基本上透明的导电层构型的方法,所述层构型至少包含含有本发明的导电聚合物的第一层,所述固有导电聚合物任选含有由式(I)表示的结构单元:其中n大于1, R 1和R 2独立地表示氢或任选取代的C 1-4烷基或一起表示任选取代的C 1-4亚烷基或任选取代的亚环烷基,优选亚乙基,任选烷基取代的 亚甲基,任选的C 1-12烷基或苯基取代的亚乙基,1,3-亚丙基或1,2-亚环己基; 以及由不连续的导电银层组成的第二层,该方法包括以下步骤:通过摄影法制备第二层; 以及发光二极管,光电器件,晶体管和电致发光器件,其包括根据该工艺制备的层构型。