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    • 11. 发明授权
    • Method for forming electrical contact to the optical coating of an
infrared detector from the backside of the detector
    • 从检测器的背面形成与红外探测器的光学涂层的电接触的方法
    • US5646066A
    • 1997-07-08
    • US396944
    • 1995-03-01
    • Steven N. FrankJames F. BelcherCharles E. StanfordRobert A. OwenRobert J. S. Kyle
    • Steven N. FrankJames F. BelcherCharles E. StanfordRobert A. OwenRobert J. S. Kyle
    • H01L31/0216H01L31/0224H01L21/44
    • H01L31/022408H01L31/02161Y10S148/08Y10S148/135Y10S438/977
    • This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.
    • 这是形成与红外检测器的光学涂层的电接触的系统和方法。 该方法可以包括:在衬底20中形成热隔离沟槽22; 在热隔离槽22中沉积沟槽填料24; 在热隔离槽22上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械地使衬底变薄以暴露沟槽填料24; 蚀刻以去除偏压接触区域中的沟槽填料24; 在衬底20的背面沉积接触金属34,其中接触金属34在围绕热隔离沟槽的周边的偏置接触区域34处连接到公共电极层31; 并且蚀刻接触金属34和沟槽填充剂24以形成接触金属34和衬底20的像素台面。可以在偏置接触区域中形成偏置接触通孔23,然后用偏置接触金属49填充。或者,偏置 接触通孔也可以用接触金属34填充。热隔离沟槽可以通过激光蒸发,离子研磨或其它等效方法形成。 此外,可以在光学涂层和基板之间形成升高层,以提供更大的离子铣削公差。 仰角层可以填充沟槽填料,然后在研磨后除去。 或者,仰角层可以用金属49填充,以将偏置接触金属连接到偏置接触区域中的公共电极。
    • 13. 发明授权
    • Infrared sensing device
    • 红外线感应装置
    • US5623158A
    • 1997-04-22
    • US483771
    • 1995-06-07
    • Steven N. FrankJames F. BelcherCharles E. StanfordRobert A. OwenRobert J. S. Kyle
    • Steven N. FrankJames F. BelcherCharles E. StanfordRobert A. OwenRobert J. S. Kyle
    • H01L31/0216H01L31/0224H01L31/00H01L31/0232
    • H01L31/022408H01L31/02161Y10S148/08Y10S148/135Y10S438/977
    • This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.
    • 这是形成与红外检测器的光学涂层的电接触的系统和方法。 该方法可以包括:在衬底20中形成热隔离沟槽22; 在热隔离槽22中沉积沟槽填料24; 在热隔离槽22上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械地使衬底变薄以暴露沟槽填料24; 蚀刻以去除偏压接触区域中的沟槽填料24; 在衬底20的背面沉积接触金属34,其中接触金属34在围绕热隔离沟槽的周边的偏置接触区域34处连接到公共电极层31; 并且蚀刻接触金属34和沟槽填充剂24以形成接触金属34和衬底20的像素台面。可以在偏置接触区域中形成偏置接触通孔23,然后用偏置接触金属49填充。或者,偏置 接触通孔也可以用接触金属34填充。热隔离沟槽可以通过激光蒸发,离子研磨或其它等效方法形成。 此外,可以在光学涂层和基板之间形成升高层,以提供更大的离子铣削公差。 仰角层可以填充沟槽填料,然后在研磨后除去。 或者,仰角层可以用金属49填充,以将偏置接触金属连接到偏置接触区域中的公共电极。
    • 14. 发明授权
    • Method for forming electrical contact to the optical coating of an
infrared detector
    • 与红外探测器的光学涂层形成电接触的方法
    • US5577309A
    • 1996-11-26
    • US397512
    • 1995-03-01
    • Steven N. FrankJames F. BelcherCharles E. StanfordRobert A. OwenRobert J. S. Kyle
    • Steven N. FrankJames F. BelcherCharles E. StanfordRobert A. OwenRobert J. S. Kyle
    • G01J5/34H01L37/02H01L31/18
    • H01L37/02G01J5/34Y10S438/928Y10T29/435Y10T29/49155
    • This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 and contact vias 23 in a substrate 20; depositing a bias contact metal 32 into the vias 23 forming biasing contact areas around a periphery of the substrate 20; depositing a first trench filler 24 in the trenches 22 and vias 23; replanarizing; depositing a common electrode layer 25 over the thermal isolation trenches and the biasing contact areas; mechanically thinning the substrate 20 to expose the biasing contact area 32 and the trench filler 24; depositing a contact metal 34 on the backside of the substrate 20, the exposed trench filler 24 and the exposed bias contact area; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. The thermal isolation trenches 22 and the bias contact vias 23 may be formed by ion milling or laser vaporization. Alternately, the bias contact areas 23 may be formed by performing laser vaporization on the substrate 20 to produce conductive 23 areas within the substrate.
    • 这是形成与红外检测器的光学涂层的电接触的系统和方法。 该方法可以包括:在衬底20中形成热隔离沟槽22和接触通孔23; 将偏置接触金属32沉积到通孔23中,形成围绕基板20的周边的接触区域; 在沟槽22和通孔23中沉积第一沟槽填料24; 补充; 在热隔离沟槽和偏置接触区域上沉积公共电极层25; 机械地使基板20变薄以暴露偏压接触区域32和沟槽填料24; 在衬底20的背面沉积接触金属34,暴露的沟槽填料24和暴露的偏压接触区域; 并蚀刻接触金属34和沟槽填料24以形成接触金属34和衬底20的像素台面。热隔离沟槽22和偏置接触通孔23可以通过离子铣削或激光蒸发形成。 或者,可以通过在衬底20上执行激光蒸发以在衬底内产生导电23区域来形成偏置接触区域23。