专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US09506603B2 Metal hydrides with embedded metal structures for hydrogen storage 有权
标题翻译：具有嵌入金属结构的金属氢化物用于储氢
公开(公告)号：US09506603B2
公开(公告)日：2016-11-29
申请号：US13615988
申请日：2012-09-14
申请人： Wen Li , John J. Vajo , Alan J. Jacobsen , Mei Cai , Martin P. Sulic
发明人： Wen Li , John J. Vajo , Alan J. Jacobsen , Mei Cai , Martin P. Sulic
IPC分类号： F17C11/00
CPC分类号： F17C11/005 , Y02E60/321 , Y10T29/49826
摘要： One illustrative embodiment includes materials and devices including an integrated hydrogen storage structure including a plurality of continuously connected thermally conductive elongated members, the elongated members including continuously connected openings between the elongated members; and, a metal hydride material contacting the elongated members and disposed within the connected openings and surrounding the elongated members.
摘要翻译：一个说明性实施例包括包括包括多个连续连接的导热细长构件的集成氢存储结构的材料和装置，细长构件包括在细长构件之间的连续连接的开口; 以及金属氢化物材料，其与细长构件接触并且设置在连接的开口内并围绕细长构件。

12. 发明授权

US09126834B2 Hydrogen storage materials 有权
标题翻译：储氢材料
公开(公告)号：US09126834B2
公开(公告)日：2015-09-08
申请号：US12615524
申请日：2009-11-10
申请人： Wen Li , Adam F. Gross , Alan J. Jacobsen , John J. Vajo
发明人： Wen Li , Adam F. Gross , Alan J. Jacobsen , John J. Vajo
IPC分类号： C01B31/02 , B82Y30/00 , C01B3/00 , B01J20/20 , B01J20/02
CPC分类号： C01B31/02 , B01J20/0203 , B01J20/20 , B82Y30/00 , C01B3/0021 , C01B3/0026 , C01B3/0031 , C01B3/0036 , C01B3/0042 , C01B3/0047 , C01B3/0057 , C01B3/0068 , C01B3/0084 , C01B32/05 , Y02E60/325 , Y02E60/327
摘要： A hydrogen storage material has been developed that comprises a metal hydride material embedded into a carbon microstructure that generally exhibits a greater bulk thermal conductivity than the surrounding bulk metal hydride material.
摘要翻译：已经开发了一种储氢材料，其包含嵌入到碳微结构中的金属氢化物材料，其通常表现出比周围的体金属氢化物材料更大的体积导热系数。

13. 发明授权

US08764966B2 Electrochemical process and device for hydrogen generation and storage 失效
标题翻译：用于氢气发生和储存的电化学工艺和装置
公开(公告)号：US08764966B2
公开(公告)日：2014-07-01
申请号：US13293432
申请日：2011-11-10
申请人： John J. Vajo , Wen Li , Ping Liu , Frederick E. Pinkerton
发明人： John J. Vajo , Wen Li , Ping Liu , Frederick E. Pinkerton
IPC分类号： C25B1/02 , C25B11/04
CPC分类号： C25B1/02 , C25D11/04 , H01M8/04216 , H01M8/0656
摘要： Both the reaction of hydride-forming compositions with hydrogen to form hydrides, and the decomposition of such hydrides to release hydrogen may be promoted electrochemically. These reactions may be conducted reversibly, and if performed in a suitable cell, the cell will serve as a hydrogen storage and release device.
摘要翻译：氢化物形成组合物与氢形成氢化物的反应以及这种氢化物分解以释放氢，可以电化学地促进。这些反应可以可逆地进行，并且如果在合适的电池中进行，则电池将用作储氢和释放装置。

14. 发明申请

US20140125398A1 Driver Integrated Circuit 有权
标题翻译：驱动器集成电路
公开(公告)号：US20140125398A1
公开(公告)日：2014-05-08
申请号：US14122623
申请日：2012-05-24
申请人： Wen Li , Norio Chujo , Masami Makuuchi , Takehito Kamimura
发明人： Wen Li , Norio Chujo , Masami Makuuchi , Takehito Kamimura
IPC分类号： H03K19/0175
CPC分类号： H03K19/0175 , H01L2224/48137 , H01L2924/181 , H03F1/52 , H03F3/195 , H03F3/211 , H03F3/3022 , H03F2200/189 , H03K19/017509 , H01L2924/00012
摘要： Provided is a configuration of a driver integrated circuit that can output a voltage exceeding the withstand voltage of a process, and that satisfies required apparatus performance (high speed and high voltage). A differential input circuit, a level shift circuit, and an output circuit are manufactured by the same process and divided and disposed on three or more chips with different substrate potentials (sub-potentials). By setting different applied voltages to the substrates of the chips, an output voltage greater than the process withstand voltage can be provided (see FIG. 2).
摘要翻译：提供可以输出超过工艺耐压的电压并满足所需设备性能（高速和高电压）的驱动器集成电路的结构。差分输入电路，电平移位电路和输出电路通过相同的工艺制造并且被分配和布置在具有不同衬底电位（子电位）的三个或更多个芯片上。通过对芯片的基板设置不同的施加电压，可以提供大于工艺耐受电压的输出电压（参见图2）。

15. 发明授权

US08495341B2 Instruction length based cracking for instruction of variable length storage operands 有权
标题翻译：指令长度为可变长度存储操作数指令的破解
公开(公告)号：US08495341B2
公开(公告)日：2013-07-23
申请号：US12707163
申请日：2010-02-17
申请人： Fadi Busaba , Brian Curran , Bruce Giamei , Christian Jacobi , Wen Li
发明人： Fadi Busaba , Brian Curran , Bruce Giamei , Christian Jacobi , Wen Li
IPC分类号： G06F9/30
CPC分类号： G06F9/30032 , G06F9/30149 , G06F9/3016 , G06F9/3017
摘要： A method, information processing system, and computer program product manage variable operand length instructions. At least one variable operand length instruction is received. The at least one variable operand length instruction is analyzed. A length of at least one operand in the variable operand length instruction is identified based on the analyzing. The at least one variable operand length instruction is organized into a set of unit of operations. The set of unit of operations are executed. The executing increases one or more performance metrics of the at least one variable operand length instruction.
摘要翻译：一种方法，信息处理系统和计算机程序产品管理可变操作数长度指令。接收至少一个可变操作数长度指令。分析至少一个可变操作数长度指令。基于分析来识别可变操作数长度指令中的至少一个操作数的长度。所述至少一个可变操作数长度指令被组织成一组操作单元。执行操作单元的集合。所述执行增加所述至少一个可变操作数长度指令的一个或多个性能度量。

16. 发明申请

US20130168796A1 PHOTODIODE ARRAYS AND METHODS OF FABRICATION 审中-公开
标题翻译：光电子阵列和制造方法
公开(公告)号：US20130168796A1
公开(公告)日：2013-07-04
申请号：US13343146
申请日：2012-01-04
申请人： Abdelaziz Ikhlef , Wen Li
发明人： Abdelaziz Ikhlef , Wen Li
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14658 , A61B6/032 , A61B6/037 , A61B6/4233 , H01L23/481 , H01L27/1446 , H01L27/14636 , H01L27/14663 , H01L31/105 , H01L2224/0401 , H01L2224/0557 , H01L2224/13022 , H01L2224/131 , H01L2924/00014 , H01L2924/014 , H01L2224/05552
摘要： Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias have a doping type different than the doping type of the substrate, and an interface between the refilled conductive vias and the substrate form diode junctions. The photodiode array further includes a patterned doped layer on the first surface overlapping the refilled conductive vias, wherein the patterned doped layer defines an array of photodiodes.
摘要翻译：提供了光电二极管阵列和制造方法。一个光电二极管阵列包括具有第一表面和相对的第二表面的硅晶片。光电二极管阵列还包括通过硅晶片的多个重新填充的导电通孔，其中重新填充的导电通孔具有不同于衬底的掺杂类型的掺杂类型，并且再填充的导电通孔和衬底之间的界面形成二极管结。光电二极管阵列还包括在重新填充的导电通孔上的第一表面上的图案化掺杂层，其中图案化掺杂层限定光电二极管阵列。

17. 发明授权

US08465857B2 Proton exchange membranes (PEM) based on hybrid inorganic-organic copolymers with grafted phosphoric acid groups and implanted metal cations 有权
标题翻译：基于具有接枝磷酸基团和植入金属阳离子的杂化无机 - 有机共聚物的质子交换膜（PEM）
公开(公告)号：US08465857B2
公开(公告)日：2013-06-18
申请号：US12885926
申请日：2010-09-20
申请人： Wen Li , Siwen Li , Meilin Liu
发明人： Wen Li , Siwen Li , Meilin Liu
IPC分类号： H01M8/10
CPC分类号： C08G77/395 , B01D67/0009 , B01D67/0048 , B01D67/0079 , B01D67/0093 , B01D69/148 , B01D71/00 , B01D71/70 , B01D2323/38 , B01D2325/26 , B01D2325/42 , C08G77/58 , C08J5/2256 , C08J2383/14 , H01M8/1037 , H01M8/1048 , H01M8/1074 , Y02P70/56
摘要： A proton exchange membrane comprises a hybrid inorganic-organic polymer that includes implanted metal cations. Acid groups are bound to the hybrid inorganic-organic polymer through an interaction with the implanted metal cations. An example process for manufacturing a proton exchange membrane includes sol-gel polymerization of silane precursors in a medium containing the metal cations, followed by exposure of the metal-implanted hybrid inorganic-organic polymer to an acid compound.
摘要翻译：质子交换膜包括杂化无机 - 有机聚合物，其包括注入的金属阳离子。通过与植入的金属阳离子的相互作用，酸基团与杂化无机 - 有机聚合物结合。用于制造质子交换膜的示例性方法包括在含有金属阳离子的介质中硅烷前体的溶胶 - 凝胶聚合，接着将注入金属的杂化无机 - 有机聚合物暴露于酸化合物。

18. 发明授权

US08385627B2 Method and apparatus for inspecting defects of semiconductor device 失效
标题翻译：用于检查半导体器件缺陷的方法和装置
公开(公告)号：US08385627B2
公开(公告)日：2013-02-26
申请号：US11500979
申请日：2006-08-09
申请人： Tadanobu Toba , Shuji Kikuchi , Yuichi Sakurai , Wen Li
发明人： Tadanobu Toba , Shuji Kikuchi , Yuichi Sakurai , Wen Li
IPC分类号： G06K9/00 , G06K7/10 , G01B5/28 , G06F11/30 , H04N3/14 , G01N21/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： When an inspection apparatus of a semiconductor device repeatedly executes computation of prescribed area data, such as image processing for detecting defects, procedures for commanding, data load, computation, and data store need to be repeated the number of times of the computation. This may impose a limitation on the speeding up of the operation. In addition, when performing parallel computation by a high-capacity image processing system for handling minute images, a lot of processors are needed, resulting in an increase in cost. In order to solve the above-mentioned problems, in the invention, an inspection apparatus of a semiconductor device includes a data memory including an access section which is capable of reading and writing simultaneously, a plurality of numerical computation units, a connector for connecting the data memory and the numerical computation units, a controller for collectively controlling the contents of processing by the plurality of numerical computation units, another connector for connecting the numerical computation units and the controller, and a data transfer controller for controlling data transfer between the numerical computation units.
摘要翻译：当半导体装置的检查装置重复执行规定区域数据的计算时，例如用于检测缺陷的图像处理，命令，数据加载，计算和数据存储的过程需要重复计算次数。这可能对操作的加速施加限制。此外，当通过大容量图像处理系统执行并行计算以处理微小图像时，需要许多处理器，导致成本增加。为了解决上述问题，在本发明中，半导体装置的检查装置包括数据存储器，该数据存储器包括能够同时读写的访问部分，多个数值计算单元，连接器数据存储器和数值计算单元，用于共同控制多个数值计算单元的处理内容的控制器，用于连接数值计算单元和控制器的另一连接器，以及用于控制数值计算之间的数据传送的数据传输控制器单位。

19. 发明授权

US08211968B2 Plasticized polyolefin compositions 有权
标题翻译：增塑聚烯烃组合物
公开(公告)号：US08211968B2
公开(公告)日：2012-07-03
申请号：US12693287
申请日：2010-01-25
申请人： Henry Wu-Hsiang Yang , Wen Li , Bruce R. Lundmark , Chon-Yie Lin , Chia Yung Cheng , Bryan R. Chapman , Petra Eiselt , Galina Ourieva , Manika Varma-Nair , James N. Coffey , Sandra Denise Schregenberger , David J. Lohse , Norman Yang , Jeffrey Theodore Zudock , Robert Jay Wittenbrink
发明人： Henry Wu-Hsiang Yang , Wen Li , Bruce R. Lundmark , Chon-Yie Lin , Chia Yung Cheng , Bryan R. Chapman , Petra Eiselt , Galina Ourieva , Manika Varma-Nair , James N. Coffey , Sandra Denise Schregenberger , David J. Lohse , Norman Yang , Jeffrey Theodore Zudock , Robert Jay Wittenbrink
IPC分类号： C08K5/01 , C08L23/12 , C08L23/14 , C08J3/18
CPC分类号： C08L23/10 , C08K5/0016 , C08K5/01 , C08L23/0815 , C08L23/12 , C08L23/16 , C08L23/18 , C08L23/20 , C08L23/22 , C08L57/00 , C08L91/00 , C08L2205/03 , C08L2314/06 , Y10T442/30 , Y10T442/60 , C08L53/00 , C08L2666/02 , C08L2666/06 , C08L2666/04
摘要： The present invention relates to plasticized polyolefin compositions comprising a polyolefin and a non-functionalized hydrocarbon plasticizer.
摘要翻译：本发明涉及包含聚烯烃和非官能化烃增塑剂的增塑聚烯烃组合物。

20. 发明申请

US20110297838A1 CHARGE LOSS CORRECTION 有权
标题翻译：充电损失校正
公开(公告)号：US20110297838A1
公开(公告)日：2011-12-08
申请号：US12794525
申请日：2010-06-04
申请人： Kristen Ann Wangerin , Wen Li , Yanfeng Du , Floribertus Heukensfeldt Jansen
发明人： Kristen Ann Wangerin , Wen Li , Yanfeng Du , Floribertus Heukensfeldt Jansen
IPC分类号： G01T1/24
CPC分类号： G01T1/2928 , A61B6/037
摘要： The present disclosure relates to the correction of charge loss in a radiation detector. In one embodiment, correction factors for charge loss may be determined based on depth of interaction and lateral position within a radiation detector of a charge creating event. The correction factors may be applied to subsequently measured signals to correct for the occurrence of charge loss in the measured signals.
摘要翻译：本公开涉及对辐射检测器中的电荷损失的校正。在一个实施例中，可以基于电荷产生事件的辐射检测器内的相互作用深度和横向位置确定电荷损失的校正因子。校正因子可以应用于随后测量的信号，以校正测量信号中电荷损失的发生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式