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11. 发明授权

US07383476B2 System architecture and method for three-dimensional memory 有权
标题翻译：三维内存的系统架构和方法
公开(公告)号：US07383476B2
公开(公告)日：2008-06-03
申请号：US10774758
申请日：2004-02-09
申请人： Matthew P. Crowley , Luca G. Fasoli , Alper Ilkbahar , Mark G. Johnson , Bendik Kleveland , Thomas H. Lee , Roy E. Scheuerlein
发明人： Matthew P. Crowley , Luca G. Fasoli , Alper Ilkbahar , Mark G. Johnson , Bendik Kleveland , Thomas H. Lee , Roy E. Scheuerlein
IPC分类号： G11C29/00 , G11C11/00
CPC分类号： G06F11/1008 , G11C7/22 , G11C17/00
摘要： In one embodiment, a chip-level architecture is provided comprising a monolithic three-dimensional write-once memory array and at least two of the following system blocks: an Error Checking & Correction Circuit (ECC); a Checkerboard Memory Array containing sub arrays; a Write Controller; a Charge Pump; a Vread Generator; an Oscillator; a Band Gap Reference Generator; and a Page Register/Fault Memory. In another embodiment, a chip-level architecture is provided comprising a monolithic three-dimensional write-once memory array, ECC, and smart write. The monolithic three-dimensional write-once memory array comprises a first conductor, a first memory cell above the first conductor, a second conductor above the first memory cell, and a second memory cell above the second conductor, wherein the second conductor is the only conductor between the first and second memory cells.
摘要翻译：在一个实施例中，提供了包括单片三维一次写入存储器阵列和以下系统块中的至少两个的芯片级结构：错误检查和校正电路（ECC）; 包含子数组的棋盘存储器阵列; 写控制器电荷泵; Vread发生器; 振荡器带隙参考发生器; 和页面寄存器/故障存储器。在另一个实施例中，提供了包括单片三维一次写入存储器阵列ECC和智能写入的芯片级架构。单片三维一次写入存储器阵列包括第一导体，第一导体上方的第一存储单元，第一存储单元上方的第二导体和第二导体上方的第二存储单元，其中第二导体是唯一的第一和第二存储单元之间的导体。

12. 发明授权

US06780711B2 Vertically stacked field programmable nonvolatile memory and method of fabrication 有权
标题翻译：垂直堆叠现场可编程非易失性存储器和制造方法
公开(公告)号：US06780711B2
公开(公告)日：2004-08-24
申请号：US10253354
申请日：2002-09-23
申请人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald
发明人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald
IPC分类号： H01L21336
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
摘要翻译：公开了一种非常高密度的现场可编程存储器。阵列垂直地形成在衬底上方，使用几层，其各层包括垂直制造的存储单元。 N级阵列中的单元可以形成N + 1掩蔽步骤以及接触所需的掩蔽步骤。自动对准技术的最大限度地使光刻限制最小化。在一个实施例中，外围电路形成在硅衬底中，并且在衬底上方制造N电平阵列。

13. 发明授权

US06483736B2 Vertically stacked field programmable nonvolatile memory and method of fabrication 有权
公开(公告)号：US06483736B2
公开(公告)日：2002-11-19
申请号：US09939431
申请日：2001-08-24
申请人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
发明人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
IPC分类号： G11C1100
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

14. 发明授权

US6034882A Vertically stacked field programmable nonvolatile memory and method of fabrication 有权
公开(公告)号：US6034882A
公开(公告)日：2000-03-07
申请号：US192883
申请日：1998-11-16
申请人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
发明人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
IPC分类号： H01L27/10 , G11C11/56 , G11C17/16 , H01L27/102 , G11C17/00
CPC分类号： H01L27/1021 , G11C11/5692 , G11C13/003 , G11C17/16 , G11C11/5678 , G11C2213/71 , G11C2213/76
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

15. 发明授权

US5961215A Temperature sensor integral with microprocessor and methods of using same 失效
标题翻译：温度传感器与微处理器集成，使用方法
公开(公告)号：US5961215A
公开(公告)日：1999-10-05
申请号：US938392
申请日：1997-09-26
申请人： Thomas H. Lee , Mark G. Johnson , Matthew P. Crowley
发明人： Thomas H. Lee , Mark G. Johnson , Matthew P. Crowley
IPC分类号： G01K7/01
CPC分类号： G01K7/01
摘要： A temperature sensor includes a bandgap reference circuit for providing a temperature-independent reference voltage, a biasing circuit that mirrors a current in the bandgap reference circuit for providing a temperature-dependent biasing voltage, and an amplifier responsive to the reference voltage and the biasing voltage for providing a temperature-dependent output voltage. Preferably, the temperature sensor is integral with a microprocessor and implemented in CMOS technology. The temperature sensor can be used, for instance, to reduce the clock speed of the microprocessor when the microprocessor temperature exceeds a predetermined temperature, or to store temperature-indicating data in non-volatile memory of the microprocessor to provide a thermal history of the microprocessor.
摘要翻译：温度传感器包括用于提供与温度无关的参考电压的带隙参考电路，用于提供带隙参考电路中的电流以提供温度依赖偏置电压的偏置电路，以及响应于参考电压和偏置电压的放大器用于提供与温度相关的输出电压。优选地，温度传感器与微处理器成一体并以CMOS技术实现。例如，温度传感器可以用于当微处理器温度超过预定温度时降低微处理器的时钟速度，或者将温度指示数据存储在微处理器的非易失性存储器中以提供微处理器的热历史。

16. 发明授权

US08503215B2 Vertically stacked field programmable nonvolatile memory and method of fabrication 有权
标题翻译：垂直堆叠现场可编程非易失性存储器和制造方法
公开(公告)号：US08503215B2
公开(公告)日：2013-08-06
申请号：US13526671
申请日：2012-06-19
申请人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
发明人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
IPC分类号： G11C11/36
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.
摘要翻译：提供了一种存储单元，其包括转向元件和与该转向元件串联耦合的非易失性状态变化元件。转向元件和状态改变元件设置在垂直定向的支柱中。还提供其他方面。

17. 发明申请

US20120250396A1 VERTICALLY STACKED FIELD PROGRAMMABLE NONVOLATILE MEMORY AND METHOD OF FABRICATION 有权
标题翻译：垂直堆叠现场可编程非易失性存储器和制造方法
公开(公告)号：US20120250396A1
公开(公告)日：2012-10-04
申请号：US13526671
申请日：2012-06-19
申请人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
发明人： Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
IPC分类号： G11C11/00 , H01L21/8239
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.
摘要翻译：提供了一种存储单元，其包括转向元件和与该转向元件串联耦合的非易失性状态变化元件。转向元件和状态改变元件设置在垂直定向的支柱中。还提供其他方面。

18. 发明申请

US20120223380A1 DENSE ARRAYS AND CHARGE STORAGE DEVICES 有权
标题翻译：渗透阵列和充电存储设备
公开(公告)号：US20120223380A1
公开(公告)日：2012-09-06
申请号：US13468731
申请日：2012-05-10
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
IPC分类号： H01L29/788 , H01L21/336 , H01L29/792
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译：提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。

19. 发明授权

US07203084B2 Three-dimensional memory device with ECC circuitry 有权
标题翻译：具有ECC电路的三维存储器件
公开(公告)号：US07203084B2
公开(公告)日：2007-04-10
申请号：US10840815
申请日：2004-05-06
申请人： Thomas H. Lee , Mark G. Johnson
发明人： Thomas H. Lee , Mark G. Johnson
IPC分类号： G11C5/02 , G11C5/06
CPC分类号： G06F11/1008 , G06F3/0601 , G06F3/08 , G06F2003/0697 , G11C17/00 , Y10S707/99934 , Y10S707/99943 , Y10S707/99953 , Y10S707/99956
摘要： The preferred embodiments described herein provide a memory device and methods for use therewith. In one preferred embodiment, a method is presented for using a file system to dynamically respond to variability in an indicated minimum number of memory cells of first and second write-once memory devices. In another preferred embodiment, a method for overwriting data in a memory device is described in which an error code is disregarded after a destructive pattern is written. In yet another preferred embodiment, a method is presented in which, after a block of memory has been allocated for a file to be stored in a memory device, available lines in that block are determined. Another preferred embodiment relates to reserving at least one memory cell in a memory device for file structures or file system structures. A memory device is also provided in which file system structures of at least two file systems are stored in the same memory partition. Additionally, methods for permanently preventing modification of data stored in a memory device and for identifying memory cells storing data are disclosed.
摘要翻译：本文描述的优选实施例提供了一种用于其的存储器件和方法。在一个优选实施例中，提出了一种使用文件系统动态地响应所指示的第一和第二一次写入存储器件的最小数量的存储器单元的可变性的方法。在另一个优选实施例中，描述了一种用于重写存储器件中的数据的方法，其中在写入破坏性图案之后忽略错误代码。在另一个优选实施例中，提出了一种方法，其中在已经为要存储在存储器件中的文件分配存储器块之后，确定该块中的可用线。另一个优选实施例涉及在用于文件结构或文件系统结构的存储器装置中保留至少一个存储器单元。还提供了一种存储器件，其中至少两个文件系统的文件系统结构存储在同一个存储器分区中。此外，公开了用于永久地防止存储在存储器件中的数据的修改和用于识别存储数据的存储单元的方法。

20. 发明授权

US07190602B2 Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement 有权
标题翻译：集成电路结合具有双重相对的解码器布置的三维存储器阵列
公开(公告)号：US07190602B2
公开(公告)日：2007-03-13
申请号：US10774818
申请日：2004-02-09
申请人： Mark G. Johnson , Thomas H. Lee , James M. Cleeves
发明人： Mark G. Johnson , Thomas H. Lee , James M. Cleeves
IPC分类号： G11C5/06
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
摘要翻译：公开了一种非常高密度的现场可编程存储器。阵列垂直地形成在衬底上方，使用几层，其各层包括垂直制造的存储单元。 N级阵列中的单元可以形成N + 1掩蔽步骤以及接触所需的掩蔽步骤。自动对准技术的最大限度地使光刻限制最小化。在一个实施例中，外围电路形成在硅衬底中，并且在衬底上方制造N电平阵列。

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