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    • 12. 发明申请
    • Soi wafer and production method therefor
    • Soi晶圆及其生产方法
    • US20060113594A1
    • 2006-06-01
    • US10542376
    • 2004-01-22
    • Masahiro SakuradaNobuaki MitamuraIzumi Fusegawa
    • Masahiro SakuradaNobuaki MitamuraIzumi Fusegawa
    • H01L27/12
    • C30B29/06C30B15/203H01L21/76251
    • An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.
    • 其中分别由硅单晶构成的基底晶片和接合晶片通过氧化膜结合的SOI晶片,然后将接合晶片变薄以形成硅有源层,其中,基底晶片由单晶硅单晶 通过切克劳斯基法,基底晶片的整个表面在OSF区域外的N区域内,并且不包括通过Cu沉积法检测的缺陷区域,或者基底晶片的整个表面在OSF区域外的区域内, 不包括通过Cu沉积法检测的缺陷区域,并且包括由于间隙硅而含有位错簇的I区域。 由此,提供了即使在形成例如厚度为100nm以下的极薄的层间电介质氧化膜的情况下,也能够在器件制造中保持高绝缘性且具有优异的电可靠性的SOI晶片。
    • 13. 发明申请
    • System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System
    • 使用该系统制造硅单晶的系统和制造硅单晶的方法
    • US20100031869A1
    • 2010-02-11
    • US12308122
    • 2007-05-28
    • Makoto IidaNobuaki MitamuraTakahiro Yanagimachi
    • Makoto IidaNobuaki MitamuraTakahiro Yanagimachi
    • C30B15/20
    • C30B15/203C30B29/06C30B35/00
    • The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in the subsequent batch. As a result, there can be provided the system for manufacturing a silicon single crystal that can more assuredly obtain a silicon single crystal having a desired crystal quality and improve productivity or a yield and a method for manufacturing a silicon single crystal using this system.
    • 本发明提供了一种制造硅单晶的系统,其设计了将F / G的值控制在规定范围内的制造条件,以使由使用 CZ方法属于目标标准,至少包括:1,从上一批硅晶单晶的晶体质量结果出发,初步设计后续批次中硅单晶的制造条件; 装置2根据后续批次中的牵引装置的构成部件从F和/或G的变化量计算校正量; 意味着3根据后续批次中的制造过程从F和/或G的变化量计算校正量; 以及通过装置1将装置2和/或装置3的校正量加到制造条件的装置4,以计算后续批次中的制造条件。 结果,可以提供一种制造硅单晶的系统,其可以更可靠地获得具有期望的晶体质量的硅单晶并且提高生产率或产率,以及使用该系统制造单晶硅的方法。
    • 15. 发明授权
    • Optical receptacle, optical sub assembly and optical transceiver
    • 光插座,光子组件和光收发器
    • US07438479B2
    • 2008-10-21
    • US11779334
    • 2007-07-18
    • Nobuaki Mitamura
    • Nobuaki Mitamura
    • G02B6/36
    • G02B6/3846G02B6/3825G02B6/3874G02B6/4246G02B6/4292
    • The present invention relates to an optical receptacle which avoids the occurrence of a large impact at the insertion of the terminal member. The optical receptacle comprises a tubular slit sleeve in which a split is made in an axial direction and into which the plug body is introduced from its first end portion, a tubular solid sleeve into which the plug body introduced is inserted from its one end portion and which has an inner diameter which makes substantially no gap with respect to an outer diameter of the plug body, and an optical propagation member which is secured to the other end portion of the solid sleeve and which is optically coupled to the plug body, with a second end portion opposite to the first end portion of the slit sleeve and the one end portion of the solid sleeve being engaged to be connected to each other.
    • 本发明涉及一种光学插座,其避免了在插入端子构件时产生大的冲击。 光学插座包括管状狭缝套筒,其中沿轴向方向形成分割,并且插塞体从其第一端部引入到其中,从其一个端部插入插入体的管状实心套管, 其具有相对于插塞体的外径基本上没有间隙的内径,以及固定在实心套筒的另一端部并且与光电耦合到插头主体的光学传播部件, 第二端部与狭缝套筒的第一端部相对,并且实心套筒的一个端部接合以彼此连接。
    • 17. 发明申请
    • WAVELENGTH DISPERSION COMPENSATING APPARATUS
    • 波长分散补偿装置
    • US20050213215A1
    • 2005-09-29
    • US10901219
    • 2004-07-29
    • Nobuaki MitamuraShinji Maruyama
    • Nobuaki MitamuraShinji Maruyama
    • G02B26/08G02B5/18G02B6/34G02B27/00
    • G02B6/12007G02B6/29311G02B6/29358G02B6/29394G02B6/29395H04B10/25133
    • A wavelength dispersion compensating apparatus of the invention comprises: a VIPA plate capable to output incident lights at different angles according to wavelengths; a variable dispersion diffraction grating which can angularly disperse the lights of respective wavelengths output from the VIPA plate, in a direction substantially perpendicular to a direction of angular dispersion in the VIPA plate and also capable to change an amount of the angular dispersion; a light return apparatus which condenses the output lights from the variable dispersion diffraction grating and reflects them by a mirror, to return them to the VIPA plate side; and a stage rotation mechanism which rotates a movable stage on which the lens and the mirror are mounted, according to a diffraction angle in the variable dispersion diffraction grating, so as to enable wavelength dispersion and wavelength dispersion slope to be given to a WDM light, to be changed independently. As a result, it becomes possible to compensate for, over a wide wavelength band, the wavelength dispersion and wavelength dispersion slope of the WDM light, which are propagated through an optical fiber to be accumulated.
    • 本发明的波长色散补偿装置包括:能够根据波长以不同角度输出入射光的VIPA板; 可变色散衍射光栅,其可以在与VIPA板中的角度色散方向基本垂直的方向上有效地分散从VIPA板输出的各个波长的光,并且还能够改变角度色散的量; 将可变色散衍射光栅的输出光聚焦并通过反射镜反射的光返回装置返回到VIPA板侧; 以及根据可变色散衍射光栅中的衍射角使安装有透镜和反射镜的可移动台旋转的台旋转机构,以便能够对WDM光赋予波长色散和波长色散斜率, 独立改变 结果,可以在宽波长带上补偿通过待累积的光纤传播的WDM光的波长色散和波长色散斜率。
    • 18. 发明授权
    • Airgap type etalon and apparatus utilizing the same
    • 气隙型标准具及其使用的装置
    • US06829053B1
    • 2004-12-07
    • US09697179
    • 2000-10-27
    • Nobuaki MitamuraHiroshi Nagaeda
    • Nobuaki MitamuraHiroshi Nagaeda
    • G02B110
    • G02B26/001G02B6/29358G02B6/29395
    • An airgap type etalon has a higher degree of design freedom of a wavelength-temperature characteristic so that such a wavelength-temperature characteristic can be freely adjusted. The airgap type etalon includes a fixing block having one flat surface, and a transparent parallel flat plate having parallel flat surfaces formed with an antireflection coating and a reflection augmenting coating thereon, respectively. The flat surface at the antireflection coating side is joined to the flat surface of the fixing block. A parallel flat spacer has a thickness greater than that of the transparent parallel flat plate and an expansion coefficient different from that of the transparent parallel flat plate. One of the flat surfaces of the parallel flat spacer is joined to the flat surface of the fixing block. A transparent flat plate has opposite flat surfaces formed with an antireflection coating and a reflection augmenting coating thereon, respectively. The flat surface at the reflection augmenting coating side is joined to the other of the flat surfaces of the parallel flat spacer, wherein a Fabry-Perot interferometer is formed based on an airgap positioned between the flat surface of the transparent parallel flat plate and the flat surface of the transparent flat plate, which flat surfaces face each other.
    • 气隙型标准具具有较高的波长温度特性的设计自由度,使得可以自由调节这种波长温度特性。 空隙型标准具包括具有一个平坦表面的固定块和分别具有平坦平面的透明平行平板,其上形成有防反射涂层和反射增强涂层。 抗反射涂层侧的平坦表面与固定块的平坦表面接合。 平行的平面间隔物的厚度大于透明平行平板的厚度,并且与透明平行平板的膨胀系数不同。 平行平面间隔件的平坦表面之一与固定块的平坦表面接合。 透明平板分别具有形成有抗反射涂层和反射增强涂层的相对的平坦表面。 反射增强涂层侧的平坦表面与平行平面间隔物的另一个平坦表面接合,其中基于位于透明平行平板的平坦表面和平面之间的气隙形成法布里 - 珀罗干涉仪 该平坦表面彼此面对的透明平板的表面。
    • 19. 发明授权
    • Toroidal type continuously variable transmission
    • 环形无级变速器
    • US06413188B2
    • 2002-07-02
    • US09886122
    • 2001-06-22
    • Takashi ImanishiNobuo GotoMakoto FujinamiHiroshi KatoNobuaki MitamuraHiroyuki ItohSeiji HiguchiHiroshi Fukushima
    • Takashi ImanishiNobuo GotoMakoto FujinamiHiroshi KatoNobuaki MitamuraHiroyuki ItohSeiji HiguchiHiroshi Fukushima
    • F16H5532
    • F16H15/38
    • A toroidal type continuously variable transmission, includes: at least one pair of disks concentrically disposed on each other and rotatably supported independent from each other; a trunnion swingable about a pivot shaft; a displacement shaft including a support shaft portion and a pivot shaft portion that are parallel and eccentric to each other, the support shaft portion rotatably supported to the circular hole of the trunnion through a radial bearing, the pivot shaft portion being protruded from an inner surface of the middle portion of the trunnion; a power roller nipped between the concave surfaces of the pair of disks while being rotatably supported on an outer circumferential surface of the pivot shaft portion; and a thrust bearings located between the power roller and the inner surface of the middle portion of the trunnions. An eccentric quantity of the displacement shaft being a distance between the support shaft portion and the pivot shaft portion is within a range from 5 mm to 15 mm.
    • 一种环形无级变速器,包括:彼此同心地设置并且彼此独立地可旋转地支撑的至少一对盘; 枢轴绕枢轴摆动的耳轴; 包括彼此平行和偏心的支撑轴部分和枢转轴部分的位移轴,所述支撑轴部分通过径向轴承可旋转地支撑在耳轴的圆形孔中,所述枢轴部分从内表面突出 的耳轴中部; 动力辊被夹在所述一对盘的凹面之间,同时被可旋转地支撑在所述枢轴部的外周面上; 以及位于动力辊和耳轴的中部的内表面之间的推力轴承。 作为支承轴部与枢轴部之间的距离的位移轴的偏心量在5mm〜15mm的范围内。