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11. 发明授权

US5129198A Cleaning device for semiconductor wafers 失效
标题翻译：用于半导体波形的清洁装置
公开(公告)号：US5129198A
公开(公告)日：1992-07-14
申请号：US643289
申请日：1991-01-22
申请人： Itaru Kanno , Nobuyoshi Hattori , Takaaki Fukumoto , Masuo Tada
发明人： Itaru Kanno , Nobuyoshi Hattori , Takaaki Fukumoto , Masuo Tada
IPC分类号： B08B7/00 , B24C3/32 , B24C9/00 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67028 , B24C3/322 , B24C9/00
摘要： A cleaning device for semiconductor wafers includes a cleaning vessel, a frozen particle supply unit, a jet nozzle for ejecting the frozen particles toward the semiconductor wafer supported within the cleaning vessel, an exhaust duct coupled to the cleaning vessel, and an exhaust blower. First and second exhausts guide to the exhaust duct frozen particles and contaminants from within the cleaning vessel near the wafer and near the walls of the vessel, respectively. The first exhaust includes a first exhaust guide pipe whose upper and lower ends open to an interior of the cleaning vessel near the wafer and to the exhaust duct, respectively. The second exhaust may include a tapered exhaust guide pipe surrounding the first exhaust guide pipe or a plurality of exhaust guide pipes disposed circumferentially uniformly around the first exhaust guide pipe.
摘要翻译：用于半导体晶片的清洁装置包括清洁容器，冷冻颗粒供应单元，用于将冷冻颗粒朝着支撑在清洁容器内的半导体晶片喷射的喷嘴，连接到清洁容器的排气管和排气鼓风机。第一和第二排气分别引导排气管冷冻颗粒和污染物从清洁容器内的晶片附近和容器壁附近。第一排气包括第一排气引导管，其第一排气引导管的上端和下端分别敞开到清洁容器的靠近晶片和排气管的内部。第二排气可以包括围绕第一排气导管的锥形排气引导管或围绕第一排气导管周向均匀设置的多个排气导管。

12. 发明授权

US5074083A Cleaning device using fine frozen particles 失效
标题翻译：使用精细冷冻颗粒清洁装置
公开(公告)号：US5074083A
公开(公告)日：1991-12-24
申请号：US653960
申请日：1991-02-12
申请人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C5/08 , H01L21/304
CPC分类号： B24C5/08 , B24C1/003
摘要： A cleaning device using fine frozen particles electrically charges the fine frozen particles produced by atomizing a liquid within a refrigerated atmosphere, controlling the speed, direction and divergence of the charged particles to cause them to strike a desired portion of an object to be cleaned. All of these operations are performed in a variable degree of vacuum. Thus, the speed, direction and divergence of the particles and the particle grain size can be precisely controlled.
摘要翻译：使用精细冷冻颗粒的清洁装置对冷冻气氛中的液体进行雾化而产生的微细冷冻颗粒进行电荷控制，控制带电粒子的速度，方向和散度，使其撞击待清洁物体的期望部分。所有这些操作都以可变的真空度进行。因此，可以精确地控制粒子的速度，方向和发散度以及粒子粒径。

13. 发明申请

US20110298097A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110298097A1
公开(公告)日：2011-12-08
申请号：US13156021
申请日：2011-06-08
申请人： Manabu Sueyoshi , Seiji Muranaka , Tomoryo Shono , Itaru Kanno
发明人： Manabu Sueyoshi , Seiji Muranaka , Tomoryo Shono , Itaru Kanno
IPC分类号： H01L29/41 , H01L21/283
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L25/0652 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05554 , H01L2224/0557 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13111 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48229 , H01L2224/73204 , H01L2224/73215 , H01L2224/73257 , H01L2224/73265 , H01L2224/83005 , H01L2224/9202 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06558 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10162 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00011 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is provided wherein stacked semiconductor substrates are electrically coupled together in a satisfactory state by a conductor buried in the interior of a through hole. A first semiconductor substrate includes a substrate having main surfaces, further includes a semiconductor element formed within and over the substrate, a wiring coupled to the semiconductor element electrically, and a conductive layer formed in the interior of a through hole, the through hole extending through mutually confronting first and second main surfaces as the main surfaces of the substrate and reaching the wiring. The first semiconductor substrate and a second semiconductor substrate are stacked and the conductive layer is coupled to a wiring of the second semiconductor substrate electrically. In a second main surface of the conductive layer, a recess is formed around an end portion of the through hole so that a bottom wall surface of the recess is present in the interior of the substrate. A conductive material which constitutes the conductive layer is filled in the interior of the recess.
摘要翻译：提供一种半导体器件，其中堆叠的半导体衬底通过埋在通孔内部的导体在令人满意的状态下电耦合在一起。第一半导体衬底包括具有主表面的衬底，还包括形成在衬底内和上面的半导体元件，电连接到半导体元件的布线，以及形成在通孔内部的导电层，所述通孔延伸穿过相互面对的第一和第二主表面作为基板的主表面并到达布线。层叠第一半导体衬底和第二半导体衬底，并且导电层电连接到第二半导体衬底的布线。在导电层的第二主表面中，在通孔的端部周围形成凹部，使得凹部的底壁表面存在于基板的内部。构成导电层的导电材料填充在凹部的内部。

14. 发明授权

US6048409A Washing apparatus and washing method 失效
标题翻译：洗衣机和洗涤方法
公开(公告)号：US6048409A
公开(公告)日：2000-04-11
申请号：US917103
申请日：1997-08-25
申请人： Itaru Kanno , Toshiaki Ohmori , Hiroshi Tanaka , Nobuaki Doi
发明人： Itaru Kanno , Toshiaki Ohmori , Hiroshi Tanaka , Nobuaki Doi
IPC分类号： B08B5/02 , A62C5/00 , B01F3/04 , B01F5/04 , B01F5/06 , B05B7/00 , B05D1/02 , B08B3/02 , B08B3/10 , B24B53/007 , H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02052 , B01F3/04049 , B01F5/045 , B08B3/02 , B08B3/022 , B08B3/10 , B24B53/007 , H01L21/67051 , Y10S134/902
摘要： The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.
摘要翻译：本发明旨在提供一种改进的装置，以有效地去除衬底上的污染物。该装置包括向基板喷射液滴的喷嘴。液体供应装置和气体供应装置连接到喷嘴。在喷嘴中设置混合液体和供应到喷嘴的气体并将液体变成液滴的混合装置。

15. 发明授权

US5746233A Washing apparatus and method therefor 失效
标题翻译：洗涤装置及其方法
公开(公告)号：US5746233A
公开(公告)日：1998-05-05
申请号：US678685
申请日：1996-07-11
申请人： Takeshi Kuroda , Itaru Kanno
发明人： Takeshi Kuroda , Itaru Kanno
IPC分类号： H01L21/304 , B08B3/04 , H01L21/00
CPC分类号： H01L21/67057 , B08B3/04 , Y10S134/902
摘要： Obtained are a washing apparatus inhibiting a washing liquid from losing its washability and a method therefor. A circulating pump (5) circulates a washing liquid (3) successively through a heater (6), a filter (7), and an overflow washing tank (2). The washing liquid (3) is gradually evaporated. On the other hand, a water supplier (10) supplies the overflow washing tank (2) with water through a tube (8). An amine supplier (11) supplies the overflow washing tank (2) with amines through a tube (9). A control unit (12) controls the quantities of the water and amines as supplied. In a washing part (50), therefore, the quantities of the water and amines are inhibited from being reduced upon a lapse of time from operation starting, whereby the washing liquid (3) is inhibited from losing its washability.
摘要翻译：获得的是洗涤装置抑制洗涤液失去其可洗性的方法及其方法。循环泵（5）使洗涤液（3）依次通过加热器（6），过滤器（7）和溢流清洗槽（2）循环。洗涤液（3）逐渐蒸发。另一方面，供水器（10）通过管（8）向溢流清洗槽（2）供水。胺供应商（11）通过管（9）向溢流清洗槽（2）供应胺。控制单元（12）控制供应的水和胺的量。因此，在洗涤部分（50）中，从操作开始经过一段时间后，可以抑制水和胺的量的减少，从而抑制洗涤液（3）的洗涤性降低。

16. 发明授权

US06713232B2 Method of manufacturing semiconductor device with improved removal of resist residues 失效
标题翻译：制造具有改善抗蚀剂残留物去除的半导体器件的方法
公开(公告)号：US06713232B2
公开(公告)日：2004-03-30
申请号：US09727542
申请日：2000-12-04
申请人： Seiji Muranaka , Itaru Kanno , Mami Shirota , Junji Kondo
发明人： Seiji Muranaka , Itaru Kanno , Mami Shirota , Junji Kondo
IPC分类号： G03C500
CPC分类号： H01L21/02071 , G03F7/426 , H01L21/31133 , H01L21/76802 , H01L21/76838
摘要： Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO2 are exposed on the surface of a wafer after etching of a metal gate.
摘要翻译：通过使用单一化学物质去除在形成Al互连的过程中形成的抗蚀剂残留物。使用含有有机酸或其盐和水并且pH低于8的化学物质作为去除抗蚀剂或抗蚀剂残留物的处理。该化学品可用于在Al互连之后Al，W，Ti，TiN和SiO2暴露在晶片表面上的工艺中; 在蚀刻在电介质层中达到Al互连的孔之后，在晶片表面上露出Al，W，Ti，TiN和SiO 2的工艺中，在Cu互连的干蚀刻或Cu互连上的层间电介质膜的蚀刻之后，在半导体晶片的表面上露出Cu的工序; 并且在诸如W，WN，Ti或TiN的金属材料的过程中，多晶硅; 罪; 并且在蚀刻金属栅极之后，在晶片的表面上露出SiO 2。

17. 发明授权

US5873380A Wafer cleaning apparatus 失效
标题翻译：晶圆清洗设备
公开(公告)号：US5873380A
公开(公告)日：1999-02-23
申请号：US583582
申请日：1996-01-05
申请人： Itaru Kanno
发明人： Itaru Kanno
IPC分类号： B08B3/02 , B05B1/26 , B05B5/08 , B05B7/00 , B08B7/02 , H01L21/00 , H01L21/304
CPC分类号： H01L21/6715 , B08B3/02 , B08B7/028 , H01L21/67051 , Y10S134/902
摘要： A cleaning apparatus is provided which removes contaminants sticking onto a wafer without damaging a device. The cleaning apparatus includes liquid supply means 23 for supplying a liquid not reactive to material constituting a wafer 1, and droplet forming means 10 for interrupting the liquid supplied from liquid supply means 23 to form a droplet 21 out of the liquid. The cleaning apparatus further includes spurting means 22 for spurting the droplet 21 toward the surface of wafer 1.
摘要翻译：提供一种清洁装置，其清除粘附在晶片上的污染物，而不损坏装置。清洗装置包括用于供给不对构成晶片1的材料无反应性的液体的液体供给装置23以及用于中断从液体供应装置23供应的液体以形成液体21的液滴21的液滴形成装置10。清洁装置还包括喷射装置22，用于将液滴21喷射到晶片1的表面。

18. 发明授权

US08037891B2 Two-fluid nozzle for cleaning substrate and substrate cleaning apparatus 有权
标题翻译：用于清洁基板和基板清洁装置的双流体喷嘴
公开(公告)号：US08037891B2
公开(公告)日：2011-10-18
申请号：US10591474
申请日：2005-03-09
申请人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
发明人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , B01F3/04049 , B05B7/0433 , B08B3/02 , Y10S134/902
摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.
摘要翻译：本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

19. 发明申请

US20090137118A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090137118A1
公开(公告)日：2009-05-28
申请号：US12248450
申请日：2008-10-09
申请人： Yusaku Hirota , Itaru Kanno
发明人： Yusaku Hirota , Itaru Kanno
IPC分类号： H01L21/306 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/67086 , H01L21/76807 , H01L21/76814 , H01L21/76832 , H01L21/76834
摘要： Initially, an interconnection 5w that contains copper is formed on a semiconductor substrate 1 (step (A)). On the interconnection 5w, an etching stopper film 6es is formed (step (B)). On the etching stopper film 6es, an insulating layer 6 is formed (step (C)). In the insulating layer 6, a via hole 6v that reaches the etching stopper film 6es is formed (step (D)). A surface of each of via hole 6v and the insulating layer 6 is cleaned with an organic solvent C (step (E)). The etching stopper film 6es is removed such that the interconnection 5w is exposed (step (F)). An interconnection 6w that electrically connects to the exposed interconnection 5w is further formed (step (G)). It is thereby possible to obtain a method of manufacturing a semiconductor device, including a cleaning step that can suppress corrosion of an interconnection that contains copper.
摘要翻译：首先，在半导体基板1上形成包含铜的布线5w（步骤（A））。在互连件5w上形成蚀刻停止膜6es（步骤（B））。在蚀刻停止膜6es上形成绝缘层6（步骤（C））。在绝缘层6中，形成到达蚀刻停止膜6es的通孔6v（步骤（D））。通孔6v和绝缘层6的表面用有机溶剂C清洗（步骤（E））。去除蚀刻停止膜6es，使得互连5w露出（步骤（F））。进一步形成与露出的布线5w电连接的布线6w（步骤（G））。从而可以获得一种制造半导体器件的方法，包括可以抑制含有铜的互连的腐蚀的清洗步骤。

20. 发明申请

US20090014028A1 METHOD OF CLEANING SUBSTRATES AND SUBSTRATE CLEANER 审中-公开
标题翻译：清洗基板和基板清洗器的方法
公开(公告)号：US20090014028A1
公开(公告)日：2009-01-15
申请号：US12170823
申请日：2008-07-10
申请人： Yusaku Hirota , Itaru Kanno , Hiroshi Morita , Junichi Ida
发明人： Yusaku Hirota , Itaru Kanno , Hiroshi Morita , Junichi Ida
IPC分类号： B08B3/10 , B08B3/12 , B08B3/08
CPC分类号： H01L21/67086 , H01L21/6708
摘要： There is provided a method of efficiently cleaning substrates without damaging a fine pattern formed thereon. It is a method of cleaning one or more substrates in a system processing one or more substrates as one batch by dipping one or more substrates as one batch, including the steps of: immersing one or more substrates as one batch in a wet etching solution; ultrasonically cleaning one or more substrates as one batch; and drying one or more substrates as one batch. The step of ultrasonically cleaning employs a cleaning solution having a gas dissolved therein to have a degree of saturation of 60% to 100% at an atmospheric pressure, and an ultrasonic wave having a frequency of at least 500 kHz and an energy of 0.02 W/cm2 to 0.5 W/cm2.
摘要翻译：提供了一种有效地清洁基板而不损害其上形成的精细图案的方法。它是通过一次浸渍一个或多个基材来清洗一个或多个基材作为一个批次的系统中的一个或多个基材的方法，包括以下步骤：将一个或多个基材作为一批在一个湿蚀刻溶液中浸渍; 超声波清洗一个或多个基材作为一批; 并将一个或多个基材作为一批干燥。超声波清洗的步骤使用溶解有气体的清洗液在大气压下具有60〜100％的饱和度，超声波的频率至少为500kHz，能量为0.02W / cm2〜0.5W / cm 2。

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