专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08513563B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08513563B2
公开(公告)日：2013-08-20
申请号：US13403588
申请日：2012-02-23
申请人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
IPC分类号： B23K10/00
CPC分类号： H01J37/32165 , H01J37/32082
摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.
摘要翻译：在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底面对第一个电极。第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。此外，电感器电连接在第一电极和地电位之间。

12. 发明授权

US08426317B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08426317B2
公开(公告)日：2013-04-23
申请号：US12791095
申请日：2010-06-01
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： H01L21/302
CPC分类号： H01J37/32623 , H01J37/32091 , H01J37/32642
摘要： An optimum application voltage for reducing deposits on a peripheral portion of a substrate as well as improving a process result in balance is effectively found without changing a height of a focus ring. A plasma processing apparatus includes a focus ring which includes a dielectric ring provided so as to surround a substrate mounting portion of a mounting table and a conductive ring provided on the dielectric ring; a voltage sensor configured to detect a floating voltage of the conductive ring; a DC power supply configured to apply a DC voltage to the conductive ring. An optimum voltage to be applied to the conductive ring is obtained based on a floating voltage actually detected from the conductive ring, and the optimum application voltage is adjusted based on a variation in the actually detected floating voltage for each plasma process.
摘要翻译：在不改变聚焦环的高度的情况下，有效地发现用于减少衬底的周边部分上的沉积物以及改善平衡处理结果的最佳施加电压。一种等离子体处理装置包括聚焦环，该聚焦环包括设置成围绕安装台的基板安装部分设置的介质环和设置在介质环上的导电环; 电压传感器，被配置为检测所述导电环的浮置电压; DC电源，被配置为向所述导电环施加DC电压。基于从导电环实际检测到的浮动电压，获得施加到导电环的最佳电压，并且基于每个等离子体处理的实际检测到的浮动电压的变化来调整最佳施加电压。

13. 发明授权

US08343306B2 Plasma processing apparatus and method of plasma distribution correction 有权
标题翻译：等离子体处理装置及等离子体分布校正方法
公开(公告)号：US08343306B2
公开(公告)日：2013-01-01
申请号：US12046094
申请日：2008-03-11
申请人： Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
发明人： Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32706 , H01J37/32091
摘要： A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
摘要翻译：等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。等离子体处理装置对基板进行等离子体处理。容纳室容纳衬底。安装台设置在壳体室内并与基板一起安装。环形构件设置在安装台中。电源单元为安装级提供高频电源。观察单元光学地观察等离子体的分布。电压施加单元向环形构件施加DC电压。控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

14. 发明授权

US08137471B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08137471B2
公开(公告)日：2012-03-20
申请号：US12696323
申请日：2010-01-29
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23C16/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

15. 发明授权

US07956310B2 Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media 有权
标题翻译：级，衬底处理装置，等离子体处理装置，级的控制方法，等离子体处理装置的控制方法和存储介质
公开(公告)号：US07956310B2
公开(公告)日：2011-06-07
申请号：US11529390
申请日：2006-09-29
申请人： Chishio Koshimizu , Tomohiro Suzuki
发明人： Chishio Koshimizu , Tomohiro Suzuki
IPC分类号： B23K10/00
CPC分类号： F27B17/0025 , F27B5/04 , G01K5/48 , G01K11/00 , H01L21/67248
摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.
摘要翻译：在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。温度测量装置200测量待处理的基板的温度。温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

16. 发明授权

US07952717B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US07952717B2
公开(公告)日：2011-05-31
申请号：US12043406
申请日：2008-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01B9/02
CPC分类号： G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括控制器，该控制器通过将第一至第N测量光束照射到温度测量对象的第一至第N测量点上，预先分别测量的干扰峰的位置作为初始峰值位置数据，并将其进行比较初始峰值位置数据分别在温度测量期间测量的干涉峰位置，从而估计第一至第n测量点中的每一个处的温度。

17. 发明申请

US20100243608A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100243608A1
公开(公告)日：2010-09-30
申请号：US12750734
申请日：2010-03-31
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： B44C1/22 , C23C16/513
CPC分类号： H01J37/32541 , H01J37/32091 , H01J37/32183 , H01J37/3255 , H01J37/32577
摘要： There is provided a plasma processing apparatus capable of varying an AC ratio without installing a largely scaled-up movable unit. An etching apparatus 10, which performs a plasma process on a wafer W within a processing chamber, includes a control member which is installed such that at least a part of the control member is in contact with a plasma region within the processing chamber, and an impedance control circuit 210 which is connected with the control member and adjusts a ground capacitance of the plasma region by controlling an electrical connection state between the control member and a ground plane.
摘要翻译：提供了一种等离子体处理装置，其能够在不安装大型放大的可移动单元的情况下改变AC比。在处理室内对晶片W进行等离子体处理的蚀刻装置10包括控制部件，该控制部件安装成使得控制部件的至少一部分与处理室内的等离子体区域接触，阻抗控制电路210，其通过控制控制构件和接地面之间的电连接状态与控制构件连接并调整等离子体区域的接地电容。

18. 发明申请

US20100206482A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD AND APPARATUS USED THEREIN 有权
标题翻译：等离子体加工装置和温度测量方法及其使用的装置
公开(公告)号：US20100206482A1
公开(公告)日：2010-08-19
申请号：US12698616
申请日：2010-02-02
申请人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
发明人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
IPC分类号： C23F1/08 , G01J5/08 , G01K1/00 , C23C16/00
CPC分类号： H01L21/67248 , G01J5/0003 , G01J5/0007 , G01J5/041 , G01J5/045 , G01J5/048 , G01J5/08 , G01J5/0803 , G01J5/0806 , G01J5/0821 , G01J5/0846 , G01K11/00 , H01J2237/2001
摘要： A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.
摘要翻译：一种等离子体处理装置，包括：温度测量单元; 设置在安装台上的气密密封温度测量窗，用于光学连通以将测量光束穿过安装台的顶表面和底表面传播; 以及用于连接安装台和设置在安装台和基板之间的空间中的基板的一个或多个连接构件。在等离子体处理装置中，将安装台上方的空间设定为保持在真空气氛下，将安装台和基板之间的间隔设定为保持在常压气氛下，将每个准直器固定在基板在与各温度测量窗对应的位置处，由温度测量单元通过温度测量窗测量基板的温度。

19. 发明授权

US07446881B2 System, apparatus, and method for determining temperature/thickness of an object using light interference measurements 有权
标题翻译：用于使用光干涉测量来确定物体的温度/厚度的系统，装置和方法
公开(公告)号：US07446881B2
公开(公告)日：2008-11-04
申请号：US11325504
申请日：2006-01-05
申请人： Tomohiro Suzuki , Chishio Koshimizu
发明人： Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01B11/02 , G01B9/02
CPC分类号： G01B11/0675
摘要： A measuring apparatus including a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a mechanism for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a mechanism for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.
摘要翻译：一种测量装置，包括发射具有允许光在每个测量目标上透射和反射的波长的光的光源，将来自光源的光分解成测量光和参考光的分离器，参考反射镜，其中来自分离器的参考光被反射，用于驱动参考反射镜以调整从参考反射镜反射的参考光的光路长度的机构和用于测量从参考反射镜反射的参考光的干涉作为参考的机构来自分离器的光朝向参考反射镜照射，并且作为来自分离器的测量光从多个测量对象反射的测量光束朝向测量对象辐射，以便透射通过测量目标。

20. 发明授权

US07339656B2 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
公开(公告)号：US07339656B2
公开(公告)日：2008-03-04
申请号：US10831757
申请日：2004-04-26
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： G01N21/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式