专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070074813A1 Method and apparatus for plasma doping 审中-公开
标题翻译：等离子体掺杂的方法和装置
公开(公告)号：US20070074813A1
公开(公告)日：2007-04-05
申请号：US11603146
申请日：2006-11-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： C23F1/00
CPC分类号： H01J37/32412 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/3299 , H01L21/2236
摘要： A method for impurity implantation, in which a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby generate a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. A controller controls at least one of the first and second high frequency electric power sources according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
摘要翻译：一种用于杂质注入的方法，其中将基板放置在设置在其中将被引入真空的室内的台上，并且还提供注入杂质。将第一高频电力施加到等离子体发生元件，从而产生等离子体，使得腔室中的杂质注入基板。此外，第二高频电力被施加到桌子上。检测到的是室内等离子体的状态，以及表中的电压或电流。控制器根据检测到的等离子体的状态和/或检测到的电压或电流来控制第一和第二高频电源中的至少一个，从而控制待植入的杂质的注入浓度。

12. 发明申请

US20060088989A1 Method of introducing impurity, device and element 有权
公开(公告)号：US20060088989A1
公开(公告)日：2006-04-27
申请号：US10526999
申请日：2003-09-19
申请人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
发明人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236
摘要： A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film. Thus, the particle is attached or introduced to the surface, or the vicinity, of solid substance. The component devices are those manufactured taking advantage of the above method or apparatus.

13. 发明授权

US5332880A Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field 失效
标题翻译：通过使用高频旋转电场产生高密度均匀等离子体的方法和装置
公开(公告)号：US5332880A
公开(公告)日：1994-07-26
申请号：US40348
申请日：1993-03-30
申请人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
发明人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46 , B23K9/00 , H01L21/306
CPC分类号： H01J37/32091 , C23C16/509 , H01J37/32165 , H01J37/32623 , H05H1/46 , Y10S977/724 , Y10S977/844
摘要： At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.
摘要翻译：在真空下的等离子体产生部分的侧面，第一至第四横向电极被设置成围绕等离子体产生部分。从第一高频电源向第一横向电极提供高频电力，通过第一延迟电路从第一高频电源向第二横向电极提供高频电力，将高频电力供给至来自第一高频电源的第三横向电极通过第一延迟电路和第二延迟电路，并且高频电力通过第一和第二延迟电路从第一高频电源提供给第四横向电极;以及通过第三个延迟电路。因此，分别向第一至第四横向电极施加频率彼此相等且相位相互不同的高频电力，并且在等离子体产生部分中激发，使等离子体产生部中的电子产生旋转运动的旋转电场。

14. 发明授权

US08821053B2 Paper discharge guide with protruding part for supporting paper at an angle 有权
标题翻译：纸张排出导轨，凸出部分用于一角度支撑纸张
公开(公告)号：US08821053B2
公开(公告)日：2014-09-02
申请号：US13469687
申请日：2012-05-11
申请人： Ichiro Nakayama
发明人： Ichiro Nakayama
IPC分类号： B41J11/70 , B41J13/10
CPC分类号： B41J11/70 , B26D1/305 , B26D7/015 , B41J11/006 , B41J13/106
摘要： A paper discharge device has a paper feed mechanism configured to convey recording paper; an automatic cutter that has a drive unit and configured to cut the recording paper conveyed by the paper feed mechanism into a slip by drive power from the drive unit; and a paper guide unit that has a paper guide surface configured to support the slip cut by the automatic cutter, and a protruding part that is disposed proximate to the guide surface and supports part of the cut end of the slip at a position configured to cause the part of the cut end to contact the recording paper conveyed by the paper feed mechanism.
摘要翻译：排纸装置具有被配置为传送记录纸的供纸机构; 具有驱动单元并被配置为通过来自驱动单元的驱动力将由进纸机构传送的记录纸切割成滑动件的自动切割器; 以及纸引导单元，其具有构造成支撑由所述自动切割器进行的滑动切割的纸张引导表面，以及突出部分，所述突出部分设置在所述引导表面附近并且支撑所述滑动部的所述切割端的一部分，切割端的一部分接触由进纸机构输送的记录纸。

15. 发明申请

US20140020750A1 SILICON SUBSTRATE HAVING TEXTURED SURFACE, AND PROCESS FOR PRODUCING SAME 有权
标题翻译：具有纹理表面的硅衬底及其生产方法
公开(公告)号：US20140020750A1
公开(公告)日：2014-01-23
申请号：US14006357
申请日：2012-03-28
申请人： Yasushi Taniguchi , Shigeru Sankawa , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
发明人： Yasushi Taniguchi , Shigeru Sankawa , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
IPC分类号： H01L31/0236 , H01L21/306 , H01L29/04
CPC分类号： H01L31/02363 , H01L21/30604 , H01L29/045 , Y02E10/50
摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.
摘要翻译：本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

16. 发明授权

US08624340B2 Plasma processing apparatus and method thereof 失效
标题翻译：等离子体处理装置及其方法
公开(公告)号：US08624340B2
公开(公告)日：2014-01-07
申请号：US13215276
申请日：2011-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
发明人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01L21/02667 , H05H1/28 , H05H1/34 , H05H1/3405
摘要： In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
摘要翻译：在等离子体焰炬单元中，形成线圈的铜棒整体设置在形成于石英块中的铜棒插入孔的内部，使得石英块被在铜杆插入孔和冷却水管内流动的水冷却。等离子体喷射口形成在割炬单元的最下部。当气体被供应到细长室内的空间中时，向铜棒供应高频功率以在细长室内的空间中产生等离子体，使得将等离子体施加到基底。

17. 发明授权

US08288259B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08288259B2
公开(公告)日：2012-10-16
申请号：US12950048
申请日：2010-11-19
申请人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/223
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
摘要翻译：随着真空室内部的抽真空，并且气体供应到真空室中停止，在氦气和乙硼烷气体的混合气体被密封在真空室中的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频电力，将硼引入到衬底表面附近。

18. 发明授权

US07858155B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07858155B2
公开(公告)日：2010-12-28
申请号：US11666773
申请日：2005-10-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/2236 , H01L21/67069
摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要翻译：本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。通过排气孔12，通过作为排气装置的涡轮分子泵3排出，通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8，在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。表面晶体通过改善样品电极6的结构，使硅晶片9的层成为无定形。

19. 发明授权

US07626184B2 Impurity introducing apparatus and impurity introducing method 失效
标题翻译：杂质引入装置和杂质引入方法
公开(公告)号：US07626184B2
公开(公告)日：2009-12-01
申请号：US12057117
申请日：2008-03-27
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01L29/04 , G21K5/10
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

20. 发明授权

US07582492B2 Method of doping impurities, and electronic element using the same 失效
标题翻译：掺杂杂质的方法和使用其的电子元件
公开(公告)号：US07582492B2
公开(公告)日：2009-09-01
申请号：US11597166
申请日：2005-05-19
申请人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
发明人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L21/2236 , H01L21/0276
摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.
摘要翻译：本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤，以及通过光辐射进行退火的步骤。根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式