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1. 发明授权

US07759254B2 Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device 有权
标题翻译：形成杂质导入层的方法，用于清洗待加工物体的方法，用于引入杂质的方法及其制造方法
公开(公告)号：US07759254B2
公开(公告)日：2010-07-20
申请号：US10569464
申请日：2004-08-25
申请人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , H01L21/2236
摘要： A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.
摘要翻译：公开了一种形成杂质导入层的方法。该方法至少包括在诸如硅衬底的固体衬底的主面上形成抗蚀剂图案的步骤（S27）; 通过离子模式的等离子体掺杂（S23）将杂质引入固体基板的步骤，去除抗蚀剂的步骤（S28），清洁附着在固体基板表面上的金属污染物和颗粒的步骤（S25a）; 退火步骤（S26）。去除抗蚀剂的步骤（S28）用氧等离子体照射抗蚀剂，或者将硫酸和过氧化氢水的混合溶液，或NH 4 OH，H 2 O 2和H 2 O的混合溶液与抗蚀剂接触。清洗步骤（S25a）将硫酸和过氧化氢水或NH 4 OH，H 2 O 2和H 2 O的混合溶液混合溶液与固体基质的主面接触。除去抗蚀剂（S28）和清洗步骤（S25a）的步骤可以通过将硫酸和过氧化氢水的混合溶液或NH 4 OH，H 2 O 2和H 2 O的混合溶液与主要面接触来同时进行固体基质。

2. 发明申请

US20080061292A1 Method of Doping Impurities, and Electronic Element Using the Same 失效
标题翻译：掺杂杂质的方法和使用它的电子元件
公开(公告)号：US20080061292A1
公开(公告)日：2008-03-13
申请号：US11597166
申请日：2005-05-19
申请人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
发明人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
IPC分类号： H01L29/04 , G21K5/00 , H01L21/66
CPC分类号： H01L21/2236 , H01L21/0276
摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.
摘要翻译：本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤，以及通过光辐射进行退火的步骤。根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

3. 发明授权

US07858155B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07858155B2
公开(公告)日：2010-12-28
申请号：US11666773
申请日：2005-10-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/2236 , H01L21/67069
摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要翻译：本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。通过排气孔12，通过作为排气装置的涡轮分子泵3排出，通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8，在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。表面晶体通过改善样品电极6的结构，使硅晶片9的层成为无定形。

4. 发明授权

US07582492B2 Method of doping impurities, and electronic element using the same 失效
标题翻译：掺杂杂质的方法和使用其的电子元件
公开(公告)号：US07582492B2
公开(公告)日：2009-09-01
申请号：US11597166
申请日：2005-05-19
申请人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
发明人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L21/2236 , H01L21/0276
摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.
摘要翻译：本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤，以及通过光辐射进行退火的步骤。根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

5. 发明申请

US20080258082A1 Plasma Processing Method and Plasma Processing Apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20080258082A1
公开(公告)日：2008-10-23
申请号：US11666773
申请日：2005-10-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
IPC分类号： G21G5/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/2236 , H01L21/67069
摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要翻译：本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。通过排气孔12通过作为排气装置的涡轮分子泵3排出，将规定的气体从气体供给装置2经由气体入口11导入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。从高频电源5将13.56MHz的高频电力供给到与样品电极6相对的电介质窗7附近设置的线圈8，由此在真空容器1内产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。通过改善样品电极6的结构，使硅晶片9的表面晶体层成为非晶体。

6. 发明申请

US20080146009A1 Method for Introducing Impurities 失效
标题翻译：引入杂质的方法
公开(公告)号：US20080146009A1
公开(公告)日：2008-06-19
申请号：US10597716
申请日：2005-02-04
申请人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
发明人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
IPC分类号： H01L21/22
CPC分类号： H01L21/2236
摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.
摘要翻译：为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

7. 发明授权

US07456085B2 Method for introducing impurities 失效
标题翻译：引入杂质的方法
公开(公告)号：US07456085B2
公开(公告)日：2008-11-25
申请号：US10597716
申请日：2005-02-04
申请人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
发明人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236
摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.
摘要翻译：为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

8. 发明授权

US08257501B2 Plasma doping device with gate shutter 失效
标题翻译：带闸门的等离子体掺杂装置
公开(公告)号：US08257501B2
公开(公告)日：2012-09-04
申请号：US11887323
申请日：2006-03-29
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： C23C16/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).
摘要翻译：在根据本发明的等离子体掺杂装置中，在从气体供应装置（2）引入预定气体的同时，通过排气口11将真空室（1）作为排气装置用涡轮分子泵（3）抽真空），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合真空室（1）中的等离子体。提供了用于向样品电极（6）提供高频电力的高频电源（10）。通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

9. 发明授权

US07858479B2 Method and apparatus of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US07858479B2
公开(公告)日：2010-12-28
申请号：US11596372
申请日：2005-05-12
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
IPC分类号： H01L21/8234
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/28035 , H01L29/7833
摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

10. 发明授权

US07601619B2 Method and apparatus for plasma processing 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07601619B2
公开(公告)日：2009-10-13
申请号：US11887821
申请日：2006-04-04
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/31 , H01L21/469 , H01L21/42 , H01J37/32 , C23F4/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32412
摘要： A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.
摘要翻译：一种用于等离子体处理的方法和装置，其可以精确地监测施加到样品表面的离子电流。通过涡轮分子泵通过排气口排出预定气体，同时从气体供给装置引入真空室内的气体，并通过压力调节阀将真空室内的压力保持在预定值。用于等离子体源的高频电源为设置在电介质窗附近的线圈提供高频电力，以在真空室内产生电感耦合等离子体。提供了用于向样品电极提供高频电力的样品电极的高频电源。在样品电极高频电源和样品电极之间设置用于样品电极和高频传感器的匹配电路。使用高频传感器和运算装置，可以精确地监视施加到样品表面的离子电流。

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