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11. 发明申请

US20130251903A1 DIAZADIENE-BASED METAL COMPOUND, METHOD FOR PREPARING SAME AND METHOD FOR FORMING A THIN FILM USING SAME 有权
标题翻译：基于二氮化萘的金属化合物，其制备方法和使用其形成薄膜的方法
公开(公告)号：US20130251903A1
公开(公告)日：2013-09-26
申请号：US13885740
申请日：2011-11-17
申请人： Won Seok Han
发明人： Won Seok Han
IPC分类号： C23C16/18
CPC分类号： C23C16/18 , C07F13/005 , C07F15/045 , C07F15/065 , C23C16/06 , C23C16/406
摘要： The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.
摘要翻译：本发明涉及基于二亚甲基二（DAD）的金属化合物及其制备方法以及使用其制备薄膜的方法。本发明的二氮二烯（DAD）类金属化合物以气态提供，通过化学气相沉积或原子层沉积形成金属薄膜或金属氧化物薄膜。特别地，本发明的二硫化二烯类有机金属化合物具有以下优点：其可以形成为金属薄膜或金属氧化物薄膜，并且可以以相对便宜的方式制备而不使用高毒性配体。

12. 发明申请

US20110017289A1 CIGS SOLAR CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译： CIGS太阳能电池及其制造方法
公开(公告)号：US20110017289A1
公开(公告)日：2011-01-27
申请号：US12769756
申请日：2010-04-29
申请人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
发明人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/0236 , H01L31/0322 , H01L31/1828 , Y02E10/541 , Y02E10/543
摘要： Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.
摘要翻译：提供CIGS太阳能电池和制造CIGS太阳能电池的方法。在该方法中，形成暴露突起的缓冲层。然后，形成具有与缓冲层的突起一致的不平坦表面的窗口电极层。因此，为了降低入射的太阳光的表面反射率和提高太阳能电池的效率，不需要用于使窗口电极层的上表面粗糙化的附加工艺，从而可以提高生产率。

13. 发明授权

US07776752B2 Method of etching for multi-layered structure of semiconductors in group III-V and method for manufacturing vertical cavity surface emitting laser device 有权
标题翻译： III-V族半导体多层结构蚀刻方法及垂直腔面发射激光器件制造方法
公开(公告)号：US07776752B2
公开(公告)日：2010-08-17
申请号：US11635223
申请日：2006-12-07
申请人： O Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
发明人： O Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
IPC分类号： H01L21/302
CPC分类号： H01L21/30621 , H01S5/183 , H01S5/2081
摘要： Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.
摘要翻译：提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4和H 2组成的混合物的等离子体中，以蚀刻层叠结构，使得形成VCSEL。第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

14. 发明授权

US07394104B2 Semiconductor optical device having current-confined structure 有权
标题翻译：具有限流结构的半导体光学器件
公开(公告)号：US07394104B2
公开(公告)日：2008-07-01
申请号：US11698418
申请日：2007-01-25
申请人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
发明人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.
摘要翻译：提供了具有限流结构的半导体光学器件。该器件包括：第一导电类型的第一半导体层，其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层，形成在第一半导体层上并包括一个或多个材料层;第三半导体层，第二导电类型的半导体层，其形成在第二半导体层上并且包括一个或多个材料层。第一半导体层，第二半导体和第三半导体层中的一层或多层具有台面结构。构成第一半导体层，第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入，并且凹部被部分地或全部地填充有氧化物层，氮化物层或者他们。具有电流限制区域的半导体光学器件是机械可靠的，高导热性的，并且是商业上优选的，并且可以用于光通信的波长范围。

15. 发明授权

US07230276B2 Semiconductor optical device having current-confined structure 有权
公开(公告)号：US07230276B2
公开(公告)日：2007-06-12
申请号：US10699127
申请日：2003-10-30
申请人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
发明人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

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