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11. 发明专利

JP2006184286A Pattern inspection device 有权
标题翻译：图案检查装置
公开(公告)号：JP2006184286A
公开(公告)日：2006-07-13
申请号：JP2006001022
申请日：2006-01-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , YAJIMA YUSUKE , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , UMEMURA KAORU , HASEGAWA MASAKI , KURODA KATSUHIRO
IPC分类号： G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of inspecting a semiconductor or the like quickly.
SOLUTION: This pattern inspection device of the present invention is arranged with at least three or more of electronic optical systems, and a degree of vacuum in the vicinity of a plurality of electron sources is kept high all the time by vacuum-evacuating an electron gun chamber mounted with the plurality of electron sources independently from a sample chamber. An electric field and a magnetic field are sealed within the each electronic optical system by a shielding electrode capable of vacuum-evacuating highly an electron beam passage, a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, and the secondary electron and the reflected electron are thereby detected within the same electronic optical system. A defect is determined thereby in the pattern inspection, by comparing detection signals obtained substantially concurrently in the same circuit patterns.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够快速检查半导体等的图案检查装置和图案检查方法。解决方案：本发明的图案检查装置配置有至少三个以上的电子光学系统，并且通过真空抽真空将多个电子源附近的真空度始终保持较高独立于样品室安装有多个电子源的电子枪室。电场和磁场通过能够对电子束通道进行高真空抽真空的屏蔽电极密封在每个电子光学系统内，负电压被设定为样品以将二次电子和反射电子加速到方向在电子束光轴中的电子源侧，从而在同一电子光学系统内检测二次电子和反射电子。通过比较基本上以相同电路图案同时获得的检测信号，从而在图案检查中确定了缺陷。版权所有（C）2006，JPO＆NCIPI

12. 发明专利

JP2005354085A Inspection method and inspection device by means of electrically-charged particle beam 有权
标题翻译：通过电荷粒子束检测方法和检查装置
公开(公告)号：JP2005354085A
公开(公告)日：2005-12-22
申请号：JP2005176063
申请日：2005-06-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NISHIYAMA HIDETOSHI , NOZOE MARI , SHINADA HIROYUKI
IPC分类号： G01N23/225 , G01R31/302 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device and an inspection method, capable of starting from a potential contrast image acquired at the time of the irradiation of electrically-charged particle beam onto the front surface of a substrate, calculating the values of the electrical resistance and the electrical capacity of an irradiation area and obtaining the distribution and the tendency of the electrical resistance and the electrical capacity of the entire surface of the substrate for a short time. SOLUTION: Secondary electrons and a back scattered electrons generated by the irradiation of electrically-charged particle beam 19 onto an inspected substrate 9, such as semiconductor wafer are incorporated into a detector 20. A signal proportional to the number of the incorporated electrons is generated. An inspection image is formed based on the signal. Electrical resistance and electrical capacity are determined such that an image is according to the inspection image in consideration of the current value and the irradiation energy of electrically-charged particle beam, an electric field on the front surface of the inspected substrate, and the emission efficiency and the like of the secondary electrons and the back-scattered electrons. Inspection is carried out and a defect is detected by acquiring the potential contrast image, in a state where a difference between the electric resistance values of a normal portion and a defective portion is increased fully using electrostatic charge caused by electron beam irradiation. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种检查装置和检查方法，能够从将带电粒子束照射时获取的潜在对比度图像开始到基板的前表面上，计算值的电阻和照射区域的电容，并且在短时间内获得基板的整个表面的电阻和电容的分布和趋势。解决方案：通过将带电粒子束19照射到检查的基板9（例如半导体晶片）上产生的二次电子和背散射的电子被并入检测器20中。与所结合的电子数目成比例的信号被生成。基于该信号形成检查图像。确定电阻和电容量，使得考虑到带电粒子束的当前值和照射能量，被检查基板的前表面上的电场和发射效率，图像根据检查图像等等的二次电子和后向散射的电子。在使用由电子束照射引起的静电电荷使普通部分和缺陷部分的电阻值之间的差异完全增加的状态下，通过获取潜在对比度图像来检测并检测缺陷。版权所有（C）2006，JPO＆NCIPI

13. 发明专利

JP2005121635A Pattern inspection device 审中-公开
标题翻译：图案检查装置
公开(公告)号：JP2005121635A
公开(公告)日：2005-05-12
申请号：JP2004255059
申请日：2004-09-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , YAJIMA YUSUKE , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , UMEMURA KAORU , HASEGAWA MASAKI , KURODA KATSUHIRO
IPC分类号： G01B15/04 , G01B15/08 , G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of inspecting a semiconductor or the like quickly.
SOLUTION: This pattern inspection device of the present invention is arranged with at least three or more of electronic optical systems, and compares detection signals obtained substantially concurrently in the same circuit fellow patterns. A degree of vacuum in the vicinity of a plurality of electron sources is kept very high all the time by vacuum-evacuating electron gun chambers mounted with the plurality of electron sources independently from a sample chamber. An electric field and a magnetic field are sealed within the each electronic optical system by a shielding electrode capable of vacuum-evacuating highly an electron beam path, and a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, so as to detect the secondary electron and the the reflected electron within the same electronic optical system. Defects are determined thereby at the same time in the pattern inspection, and a through-put of the inspection is enhanced thereby. The three or more of electron beam sources are stably operated therein under the high-vacuum condition, and accurate inspection is carried out therein.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够快速检查半导体等的图案检查装置和图案检查方法。解决方案：本发明的图案检测装置配置有至少三个以上的电子光学系统，并且比较以相同的电路图案基本同时获得的检测信号。在多个电子源附近的真空度始终通过与样品室独立地安装有多个电子源的电子枪室而真空抽真空。电场和磁场通过能够高度真空排出电子束路径的屏蔽电极密封在每个电子光学系统内，并且将负电压设置为样品以将二次电子和反射电子加速到在电子束光轴中的电子源侧的方向，以便检测同一电子光学系统内的二次电子和反射电子。因此，在图案检查中同时确定缺陷，从而增强检查的通过。三个以上的电子束源在高真空条件下稳定地工作，并且在其中进行精确的检查。版权所有（C）2005，JPO＆NCIPI

14. 发明专利

JP2003059989A Method for fabricating semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003059989A
公开(公告)日：2003-02-28
申请号：JP2001245445
申请日：2001-08-13
申请人： Hitachi Ltd , Hitachi Ulsi Systems Co Ltd , 株式会社日立製作所 , 株式会社日立超エル・エス・アイ・システムズ
发明人： ARAUCHI KEIKO , NOZOE MARI , SUGIMOTO ARITOSHI
IPC分类号： G01B11/24 , G01B15/00 , G01N21/956 , G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a technology for shortening the time required for visual comparative inspection in a semiconductor device having a plurality of kinds of pattern group where the comparing pitch and comparing direction of a repetitive pattern are different from each other. SOLUTION: Comparing pitch and comparing direction are altered during a series of inspection operations where a semiconductor wafer is scanned with an electron beam by specifying regions A and B in the inspection file of a visual comparative inspection equipment and inputting the comparing pitch (first comparison pitch d1, second comparison pitch d2) and the comparing direction (X direction, Y direction) of respective regions A and B into the inspection file.
摘要翻译：要解决的问题：提供一种用于缩短具有重复图案的比较间距和比较方向彼此不同的多种图案组的半导体装置中的视觉比较检查所需的时间的技术。解决方案：通过在目视比较检查设备的检查文件中指定区域A和B并输入比较间距（第一比较间距（第一比较间距）），在通过电子束扫描半导体晶片的一系列检查操作期间，比较间距和比较方向 d1，第二比较间距d2）和各个区域A和B的比较方向（X方向，Y方向）到检查文件中。

15. 发明专利

JP2003006614A Method and device for inspecting circuit pattern, method and system for displaying defect candidate 有权
标题翻译：用于检查电路图的方法和装置，用于显示缺陷候选的方法和系统
公开(公告)号：JP2003006614A
公开(公告)日：2003-01-10
申请号：JP2002045569
申请日：2002-02-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROI TAKASHI , WATANABE MASAHIRO , SHISHIDO CHIE , KUNI TOMOHIRO , TANAKA MAKI , MIYAI YASUSHI , NARA YASUHIKO , NOZOE MARI
IPC分类号： G01N23/225 , G01N21/956 , G06T1/00 , G06T7/00 , H01L21/66
CPC分类号： G06T7/001 , G01N21/95684 , G06T2207/10056 , G06T2207/30148
摘要： PROBLEM TO BE SOLVED: To provide technology provided with a method and a system for inspecting a defect in a circuit pattern on semiconductor materials. SOLUTION: As one specified execution style, a trial inspection threshold setting method is provided but in that method, an initial threshold is corrected after the defect of a trial inspection storage data is analyzed. Afterwards, the corrected threshold is used as a threshold in the real inspection.
摘要翻译：要解决的问题：提供一种提供用于检查半导体材料上的电路图案的缺陷的方法和系统的技术。解决方案：作为一种指定的执行方式，提供试验性检查阈值设定方法，但是在该方法中，在分析试验检查存储数据的缺陷之后校正初始阈值。之后，在实际检查中将校正后的阈值用作阈值。

16. 发明专利

JP2006179889A Method and apparatus for inspecting circuit pattern 有权
标题翻译：检查电路图的方法和装置
公开(公告)号：JP2006179889A
公开(公告)日：2006-07-06
申请号：JP2005346042
申请日：2005-11-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOZOE MARI , MACHIDA KAZUHISA , ITO MASANORI , USAMI YASUTSUGU , HIROI TAKASHI , MORIOKA HIROSHI
IPC分类号： H01L21/66 , G01B11/24 , G01B15/04 , G01B15/08 , G01N21/956 , G01N23/225 , G03F1/84 , G03F1/86 , H01J37/22 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a technique for improving operability when setting various conditions needed for inspection in a technique for inspecting a minute circuit pattern using an image formed by irradiating a white light, a laser beam, or an electron beam. SOLUTION: This is a circuit pattern inspection apparatus that is composed of a means for irradiating a light or a light and charged particle beam onto a substrate surface on which a circuit pattern is formed, a means for detecting a signal generated from the substrate, a means for imaging the signal detected by the detection means for temporary storage, a means for comparing the stored image of the region against a region where the other same circuit pattern is formed, and a means for determining a defect on the circuit pattern from the comparison result. The operation screen for inspection and inspection conditions setting has a screen area that displays operation status or input data, and a means for displaying subject names showing the screen, and the subject names are displayed as an integral part of the operation screen region. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在使用通过照射白光，激光束或电子束形成的图像的微小电路图案的检查技术中设置检查所需的各种条件时提高可操作性的技术。解决方案：这是一种电路图形检查装置，其由用于将光或光和带电粒子束照射到其上形成有电路图案的基板表面上的装置，用于检测从基板，用于对由检测装置检测的用于临时存储的信号进行成像的装置，用于将存储的区域的图像与形成另一个相同电路图案的区域进行比较的装置，以及用于确定电路图案上的缺陷的装置从比较结果。用于检查和检查条件设置的操作屏幕具有显示操作状态或输入数据的屏幕区域，以及用于显示显示屏幕的主题名称的装置，并且将主题名称显示为操作屏幕区域的组成部分。版权所有（C）2006，JPO＆NCIPI

17. 发明专利

JP2006003370A Substrate inspection device and substrate inspection method using charged particle beam 有权
标题翻译：基板检查装置和使用充电颗粒光束的基板检查方法
公开(公告)号：JP2006003370A
公开(公告)日：2006-01-05
申请号：JP2005238300
申请日：2005-08-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MATSUI MIYAKO , NOZOE MARI , TAKATO HIROKO
IPC分类号： G01N23/225 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To inspect a defect on a wafer having a pattern with a high step difference under a semiconductor manufacturing process such as a contact hole to quickly acquire information such as a position and a kind of the defect such as a non-opened defect by dry etching, and to specify a generation process of the defect and a factor thereof, based on the acquired defect information, so as to enhance a yield and to shorten a process optimization time.
SOLUTION: An electron beam having 100eV or more to 1000eV or less of irradiation energy is scanned/emitted to the wafer having the pattern with the high step difference under the semiconductor manufacturing process, the defect is inspected quickly based on an image of a secondary electron generated therein. The wafer is irradiated at a high speed with the electron beam while moving the wafer, before acquiring the image of the secondary electron, to control a wafer surface at a desired charge voltage. The kind of the defect is determined based on the acquired secondary electron image to display a wafer in-plane distribution.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在诸如接触孔的半导体制造过程中检查具有高阶梯差的图案的晶片上的缺陷，以快速获取诸如诸如接触孔的缺陷的位置和种类的信息基于所获取的缺陷信息来指定缺陷的产生过程及其因素，从而提高产量并缩短处理优化时间。解决方案：在半导体制造过程中，具有100eV以上至1000eV以下的照射能量的电子束被扫描/发射到具有高阶差的图案的晶片，基于图像的图像快速检查缺陷在其中产生二次电子。在获取二次电子的图像之前，在移动晶片的同时以电子束高速照射晶片，以期望的充电电压来控制晶片表面。基于所获取的二次电子图像来确定缺陷的种类以显示晶片的平面内分布。版权所有（C）2006，JPO＆NCIPI

18. 发明专利

JP2005121634A Pattern inspection device 审中-公开
标题翻译：图案检查装置
公开(公告)号：JP2005121634A
公开(公告)日：2005-05-12
申请号：JP2004255057
申请日：2004-09-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , YAJIMA YUSUKE , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , UMEMURA KAORU , HASEGAWA MASAKI , KURODA KATSUHIRO
IPC分类号： G01B15/04 , G01N23/225 , H01J37/18 , H01J37/244 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of inspecting a semiconductor or the like quickly.
SOLUTION: This pattern inspection device of the present invention is arranged with at least three or more of electronic optical systems, and compares detection signals obtained substantially concurrently in the same circuit fellow patterns. A degree of vacuum in the vicinity of electron sources is kept very high all the time by vacuum-evacuating a plurality of electron gun chambers independently from a sample chamber. An electric field and a magnetic field are sealed within the each electronic optical system by a shielding electrode capable of vacuum-evacuating an electron beam path, and a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, so as to detect the secondary electron and the the reflected electron within the same electronic optical system. Defects are determined thereby at the same time in the pattern inspection, and a through-put of the inspection is enhanced proportionally to the number of the electronic optical systems.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够快速检查半导体等的图案检查装置和图案检查方法。解决方案：本发明的图案检测装置配置有至少三个以上的电子光学系统，并且比较以相同的电路图案基本同时获得的检测信号。电子源附近的真空度始终通过与样品室独立地抽真空多个电子枪室而始终保持非常高。通过能够真空抽真空电子束路径的屏蔽电极将电场和磁场密封在每个电子光学系统内，并且向样品设置负电压以将二次电子和反射电子加速到方向在电子束光轴中的电子源侧，以便检测同一电子光学系统内的二次电子和反射电子。因此，在图案检查中同时确定缺陷，并且与电子光学系统的数量成比例地增加检查的通过。版权所有（C）2005，JPO＆NCIPI

19. 发明专利

JP2005101619A Inspecting method of pattern defect and inspecting device 有权
标题翻译：模式缺陷检测方法及检测手段
公开(公告)号：JP2005101619A
公开(公告)日：2005-04-14
申请号：JP2004289636
申请日：2004-10-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHINADA HIROYUKI , YAJIMA YUSUKE , MURAKOSHI HISAYA , HASEGAWA MASAKI , NOZOE MARI , TAKATO ATSUKO , SUGIYAMA KATSUYA , KURODA KATSUHIRO , UMEMURA KAORU , USAMI YASUTSUGU
IPC分类号： H01L21/66 , G06T1/00 , G06T7/00 , H04N1/113
摘要： PROBLEM TO BE SOLVED: To realize the acceleration of an inspection in a device which inspects the defects of the same design patterns, foreign matter, residue or the like on a wafer in the manufacturing process of a semiconductor device with electron beams.
SOLUTION: The electron beam (area beam) having a certain area on the surface of a semiconductor sample 7 is radiated, reflected electrons from the surface of the sample are imaged by an imaging lens 11, images of a plurality of areas on the surface of the semiconductor sample 7 are obtained and are stored in image memories 18, 19, and whether there are defects and the locations of the defects in the area are measured by comparing the stored images in a plurality of the areas.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在具有电子束的半导体器件的制造过程中，在晶片上检查在相同设计图案，异物，残留物等的缺陷的装置中实现检查的加速。解决方案：在半导体样品7的表面上具有一定面积的电子束（面积束）被辐射，来自样品表面的反射电子由成像透镜11成像，多个区域的图像获得半导体样品7的表面并存储在图像存储器18,19中，以及是否存在缺陷，并且通过比较多个区域中存储的图像来测量区域中的缺陷的位置。版权所有（C）2005，JPO＆NCIPI

20. 发明专利

JP2004157135A Method of and apparatus for inspecting circuit pattern 审中-公开
公开(公告)号：JP2004157135A
公开(公告)日：2004-06-03
申请号：JP2004010030
申请日：2004-01-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOZOE MARI , SHINADA HIROYUKI , WATANABE KENJI , SAEKI KEIICHI , SUGIMOTO ARITOSHI , MORIOKA HIROSHI , TANAKA MAKI , MIYAI YASUSHI
IPC分类号： G01N23/225 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To conduct inspection under optimum conditions without delay of inspection time by obtaining an optimal irradiation condition of an electron beam according to the material and structure of a circuit pattern to be inspected and kinds of defects to be detected. SOLUTION: An optimal value of irradiation energy according to the structure of a sample is registered with a database within the apparatus in advance. A user is allowed to search for a recommended value of irradiation energy suitable for inspection by inputting or selecting irradiation energy, or inputting information on the structure of an object to be inspected. By using the inspecting method, a substrate having a circuit pattern is inspected, while an image of a location in which a defect is detected is automatically stored. By using the stored image, defects are classified simultaneously with or separately from the inspection. COPYRIGHT: (C)2004,JPO

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