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11. 发明授权

US08427791B2 Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same 有权
标题翻译：具有磁性插入层的磁性隧道结及其制造方法
公开(公告)号：US08427791B2
公开(公告)日：2013-04-23
申请号：US12953233
申请日：2010-11-23
申请人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
发明人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1121
摘要： According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.
摘要翻译：根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层层具有纹理的面心立方（fcc）结构。第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。根据更多实施例描述附加的磁头结构和制造磁头的方法。

12. 发明授权

US08349197B2 Method for manufacturing a perpendicular magnetic write head having a tapered write pole and non-magnetic bump structure 有权
标题翻译：具有锥形写磁极和非磁性凸块结构的垂直写磁头的制造方法
公开(公告)号：US08349197B2
公开(公告)日：2013-01-08
申请号：US12623206
申请日：2009-11-20
申请人： Liubo Hong , Wen-Chien D. Hsiao , Yimin Hsu , Yi Zheng
发明人： Liubo Hong , Wen-Chien D. Hsiao , Yimin Hsu , Yi Zheng
IPC分类号： B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3143 , G11B5/315 , G11B5/3163 , Y10T29/49048
摘要： A method for manufacturing a magnetic write head having a write pole and a trailing wrap around magnetic shield, and having a non-magnetic step layer and a non-magnetic bump to provide additional spacing between the write pole and the trailing wrap around shield at a location removed from the air bearing surface. A magnetic write pole material is deposited on a substrate and a non-magnetic step layer is deposited over the write pole. A reactive ion milling can he used to pattern the non-magnetic step layer to have a front edge that is located a desired distance from an air hearing surface. A patterning and ion milling process is then performed to define a write pole, and then a layer of alumina is deposited and ion milled to from a tapered, non-magnetic bump at the front the non-magnetic step layer.
摘要翻译：一种用于制造磁性写入头的方法，该写入磁头在磁屏蔽周围具有写入磁极和尾部缠绕，并且具有非磁性阶跃层和非磁性凸起，以在写入磁极和屏蔽之间的后续缠绕在一个位置从空气轴承表面移除。磁性写入极材料沉积在衬底上，非磁性步骤层沉积在写入极上。他可以使用反应离子研磨来对非磁性步骤层进行图案化以具有位于距离空气听力表面所需距离的前边缘。然后进行图形化和离子研磨处理以限定写入极，然后沉积氧化铝层，并从非磁性阶梯层前面的锥形非磁性凸块离子研磨。

13. 发明授权

US08216481B2 Process for fabricating ultra-narrow dimension magnetic sensor 有权
标题翻译：制造超窄尺寸磁传感器的工艺
公开(公告)号：US08216481B2
公开(公告)日：2012-07-10
申请号：US12581030
申请日：2009-10-16
申请人： Liubo Hong
发明人： Liubo Hong
IPC分类号： B44C1/22
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3116 , G11B5/3163 , G11B5/3909 , G11B2005/3996
摘要： A method for manufacturing a magnetoresistive read sensor that allows the sensor to be constructed with clean well defined side junctions, even at very narrow track widths. The method involves using first and second etch mask layers, that are constructed of materials such that the second mask (formed over the first mask) can act as a mask during the patterning of the first mask (bottom mask). The first mask has a well defined thickness that is defined by deposition and which is not affected by the etching processes used to define the mask. This allows the total ion milling etch mask thickness to be well controlled before the ion milling process used to define the sensor side walls.
摘要翻译：一种用于制造磁阻读取传感器的方法，即使在非常窄的轨道宽度下也能够使传感器构造成具有清晰良好定义的侧面接合点。该方法包括使用由材料构成的第一和第二蚀刻掩模层，使得第二掩模（形成在第一掩模上）可以在图案化第一掩模（底掩模）期间用作掩模。第一掩模具有由沉积限定的良好限定的厚度，并且其不受用于限定掩模的蚀刻工艺的影响。这允许在用于限定传感器侧壁的离子铣削过程之前，完全控制总离子铣削蚀刻掩模厚度。

14. 发明授权

US08201320B2 Method for manufacturing a magnetic write head having a wrap around shield that is magnetically coupled with a leading magnetic shield 有权
标题翻译：一种用于制造具有与领先磁屏蔽磁耦合的围绕屏蔽的磁性写入头的方法
公开(公告)号：US08201320B2
公开(公告)日：2012-06-19
申请号：US12641242
申请日：2009-12-17
申请人： Donald G. Allen , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H. P. Lee , Fenglin Liu , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
发明人： Donald G. Allen , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H. P. Lee , Fenglin Liu , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
IPC分类号： H04R31/00 , G11B5/127
CPC分类号： G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetic write head having a leading magnetic shield and a trailing magnetic shield that are arranged to prevent the lost of magnetic write field to the trailing magnetic shield. The write head includes a non-magnetic step layer that provides additional spacing between the trailing magnetic shield and the write pole at a region removed from the air bearing surface.
摘要翻译：一种用于制造具有前磁屏蔽和后磁屏蔽的磁写头的方法，该方法被布置为防止向后磁屏蔽的磁写磁场的损失。写头包括非磁性阶梯层，其在从空气轴承表面移除的区域处在后磁屏蔽和写极之间提供额外的间隔。

15. 发明申请

US20120127615A1 TMR READER STRUCTURE AND PROCESS FOR FABRICATION 有权
标题翻译： TMR读取器结构和制造过程
公开(公告)号：US20120127615A1
公开(公告)日：2012-05-24
申请号：US12954334
申请日：2010-11-24
申请人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
发明人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
IPC分类号： G11B5/33 , G01R33/32
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3163 , G11B5/3932
摘要： The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.
摘要翻译：本发明一般涉及TMR读取器及其制造方法。本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。屏蔽层沉积在覆盖层上，使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。此外，硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面，使得顶部引线层不存在。通过消除顶部引线层并且在传感器结构内包括屏蔽层，读取间隙减小，同时在稍后处理期间仍然保护自由磁性层。

16. 发明申请

US20110146062A1 METHOD FOR MANUFACTURING A MAGNETIC WRITE HEAD HAVING A WRAP AROUND SHIELD THAT IS MAGNETICALLY COUPLED WITH A LEADING MAGNETIC SHIELD 有权
标题翻译：用于制造磁性写头的方法，该磁头具有与磁带的磁屏蔽磁耦合的磁带
公开(公告)号：US20110146062A1
公开(公告)日：2011-06-23
申请号：US12641242
申请日：2009-12-17
申请人： Donald G. Allen , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H.P. Lee , Fenglin Liu , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
发明人： Donald G. Allen , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H.P. Lee , Fenglin Liu , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
IPC分类号： G11B5/127
CPC分类号： G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetic write head having a leading magnetic shield and a trailing magnetic shield that are arranged to prevent the lost of magnetic write field to the trailing magnetic shield. The write head includes a non-magnetic step layer that provides additional spacing between the trailing magnetic shield and the write pole at a region removed from the air bearing surface.
摘要翻译：一种用于制造具有前磁屏蔽和后磁屏蔽的磁写头的方法，该方法被布置为防止向后磁屏蔽的磁写磁场的损失。写头包括非磁性阶梯层，其在从空气轴承表面移除的区域处在后磁屏蔽和写极之间提供额外的间隔。

17. 发明授权

US07838436B2 Bottom electrode for MRAM device and method to fabricate it 有权
标题翻译：用于MRAM设备的底电极及其制造方法
公开(公告)号：US07838436B2
公开(公告)日：2010-11-23
申请号：US11528877
申请日：2006-09-28
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
摘要翻译：通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

18. 发明授权

US07358100B2 Bottom conductor for integrated MRAM 有权
标题翻译：集成MRAM的底部导体
公开(公告)号：US07358100B2
公开(公告)日：2008-04-15
申请号：US11891923
申请日：2007-08-14
申请人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
发明人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum.
摘要翻译：描述了一种制造MTJ器件及其与CMOS集成电路的连接的方法。该设备由三层构建。底层用作中心层的种子层，其为α钽，而第三最顶层选择为其平滑度，其与层间电介质材料的相容性以及其保护下面的钽的能力。

19. 发明授权

US07238979B2 Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM 有权
标题翻译：缓冲（种子）层在高性能磁隧道结MRAM中
公开(公告)号：US07238979B2
公开(公告)日：2007-07-03
申请号：US11236049
申请日：2005-09-26
申请人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
发明人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/30 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12
摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.
摘要翻译：特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑，并具有高的击穿电压。种子层是形成在Ta的溅射蚀刻层上的NiCr层。用于MRAM的隧道势垒层由Al的薄层形成，其被自由基氧化（ROX），原位形成具有上述特征的层。用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被天然氧化（NOX）原位形成以形成阻挡层。所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

20. 发明授权

US07217577B2 Structure/method to fabricate a high-performance magnetic tunneling junction MRAM 失效
标题翻译：制造高性能磁隧道结MRAM的结构/方法
公开(公告)号：US07217577B2
公开(公告)日：2007-05-15
申请号：US11522663
申请日：2006-09-18
申请人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L43/08 , Y10S977/934 , Y10S977/935
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
摘要翻译：在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层）其超薄，光滑，并具有高击穿电压。在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

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