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11. 发明申请

WO1995003533A2 STATIC PRESSURE COMPENSATION OF RESONANT INTEGRATED MICROBEAM SENSORS 审中-公开
标题翻译：共振式微波传感器静态补偿
公开(公告)号：WO1995003533A2
公开(公告)日：1995-02-02
申请号：PCT/US1994008066
申请日：1994-07-19
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L01/18
CPC分类号： G01P15/097 , G01D3/0365 , G01L1/18 , G01L9/0019 , G01P1/006
摘要： A temperature and static pressure compensated differential pressure sensor includes a semiconductor substrate in which a flexible, pressure responsive diaphragm is formed. A pressure responsive resonant microbeam is fabricated at the diaphragm periphery. For temperature compensation, a secondary resonant microbeam sensor is fabricated on the substrate at a peripheral location beyond the point of substrate attachment to a pressure tube or other support. For static pressure compensation, another secondary resonant microbeam can be positioned remote from the diaphragm and at a location of maximum substrate response to static pressure. A further resonant microbeam can be mounted at the diaphragm center to augment the signal due to diaphragm deflections. Also disclosed is an accelerometer including a proof mass, a rigid rim surrounding the proof mass, and a series of narrow, flexible bridges supporting the proof mass relative to the rim. The bridges flex responsive to accelerations, thus to allow the proof mass to move relative to the rim. At least one of the bridges incorporates a resonant microbeam for measuring acceleration by virtue of the induced strain from flexure of its associated bridge. For temperature compensation, a secondary resonant microbeam is fabricated along the rim.
摘要翻译：温度和静压补偿压差传感器包括其中形成有柔性的压力响应膜片的半导体衬底。压力响应谐振微束在隔膜周边制造。对于温度补偿，次级谐振微束传感器在基板上的周边位置处制造，超过衬底连接到压力管或其他支撑点。对于静态压力补偿，另一个次级谐振微束可以远离隔膜定位在最大衬底对静压的响应位置。可以在隔膜中心安装另外的谐振微束，以增加由于隔膜偏转引起的信号。还公开了一种加速度计，其包括检测质量块，围绕检测质量块的刚性边缘，以及一系列相对于边缘支撑证明物质的窄的柔性桥梁。桥梁响应于加速度而弯曲，从而允许检测质量相对于轮辋移动。至少一个桥结合有谐振微束，用于通过其相关桥的挠曲引起的应变来测量加速度。对于温度补偿，沿着边缘制造次级谐振微束。

12. 发明公开

EP0710357A1 Dielectrically isolated resonant microsensors 失效
标题翻译：电介质隔离的共振微传感器
公开(公告)号：EP0710357A1
公开(公告)日：1996-05-08
申请号：EP95906824.0
申请日：1994-07-22
申请人： HONEYWELL INC.
发明人： BURNS, David, W.
IPC分类号： G01L1 , G01L9 , G01P15 , H01L29 , H04R17
CPC分类号： H04R17/025 , G01L1/183 , G01L9/0019 , G01P15/0802 , G01P15/097 , G01P2015/0828
摘要： A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam fixed at both ends relative to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed at the bottom of a trough in the substrate directly beneath the flexure beam. A drive electrode and a piezoresistive element are supported by the beam, formed over a silicon nitride thin film layer deposited onto the top surface of the flexure beam. A second silicon nitride layer covers the drive electrode and piezoresistor, cooperating with the first silicon nitride layer to dielectrically encapsulate the drive electrode and piezoresistor. The silicon nitride further extends outwardly of the beam to a location between the polysilicon layer that contains the beam, and the cover, to isolate the cover from the flexure beam. A polysilicon film is applied over the upper silicon nitride layer as a passivation layer to protect the silicon nitride during gauge fabrication. The process for fabricating the gauge includes a sequence of applying the various polysilicon and silicon nitride layers by low pressure chemical vapor deposition, in combination with selective etching to define the flexure beam, electric circuit components and vacuum chamber.

13. 发明授权

EP0950171B1 A THIN FILM RESONANT MICROBEAM ABSOLUTE PRESSURE SENSOR 失效
标题翻译：具有振动的微观力学BAR绝对式传感器
公开(公告)号：EP0950171B1
公开(公告)日：2005-01-12
申请号：EP97947554.8
申请日：1997-11-17
申请人： HONEYWELL INC.
发明人： HERB, William, R. , BURNS, David, W.
IPC分类号： G01L9/00
CPC分类号： G01L9/002
摘要： A micromechanical sensor having a polysilicon beam that is an integral part of the diaphragm resulting in a frequency of the beam that is a direct result of the pressure applied to the external surface of the diaphragm. Fabrication of this resonant microbeam sensor has no backside wafer processing, and involves a process and layout independent of wafer thickness for high yield and robustness. Both the diaphragm and resonant beam are formed from polysilicon. The sensor may have more than one resonant beam. The sensor beam or beams may be driven and sensed by electrical or optical mechanisms. For stress isolation, the sensor may be situated on a cantilevered single crystal silicon paddle. The sensor may be recessed on the isolating die for non-interfering interfacing with optical or electrical devices. The sensor die may be circular for ease in mounting with fiber optic components.

14. 发明授权

EP0710357B1 Dielectrically isolated resonant microsensor 失效
标题翻译：介电隔离微谐振转换器
公开(公告)号：EP0710357B1
公开(公告)日：2000-12-20
申请号：EP95906824.8
申请日：1994-07-22
申请人： HONEYWELL INC.
发明人： BURNS, David, W.
IPC分类号： G01L1/10 , G01P15/10 , G01D5/00
CPC分类号： H04R17/025 , G01L1/183 , G01L9/0019 , G01P15/0802 , G01P15/097 , G01P2015/0828
摘要： A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam fixed at both ends relative to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed at the bottom of a trough in the substrate directly beneath the flexure beam. A drive electrode and a piezoresistive element are supported by the beam, formed over a silicon nitride thin film layer deposited onto the top surface of the flexure beam. A second silicon nitride layer covers the drive electrode and piezoresistor, cooperating with the first silicon nitride layer to dielectrically encapsulate the drive electrode and piezoresistor. The silicon nitride further extends outwardly of the beam to a location between the polysilicon layer that contains the beam, and the cover, to isolate the cover from the flexure beam. A polysilicon film is applied over the upper silicon nitride layer as a passivation layer to protect the silicon nitride during gauge fabrication. The process for fabricating the gauge includes a sequence of applying the various polysilicon and silicon nitride layers by low pressure chemical vapor deposition, in combination with selective etching to define the flexure beam, electric circuit components and vacuum chamber.

15. 发明授权

EP0740781B1 COMPENSATION OF RESONANT INTEGRATED MICROBEAM SENSORS 失效
标题翻译：补偿与共振振动集成式微梁式传感器
公开(公告)号：EP0740781B1
公开(公告)日：1998-09-02
申请号：EP94927904.6
申请日：1994-07-19
申请人： HONEYWELL INC.
发明人： BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L1/18 , G01D3/028 , G01P15/10
CPC分类号： G01P15/097 , G01D3/0365 , G01L1/18 , G01L9/0019 , G01P1/006

16. 发明授权

EP0950173B1 METHOD FOR MAKING A THIN FILM RESONANT MICROBEAM ABSOLUTE PRESSURE SENSOR 失效
标题翻译：制作薄膜传感器具有绝对微梁
公开(公告)号：EP0950173B1
公开(公告)日：2003-11-05
申请号：EP97954284.2
申请日：1997-12-29
申请人： HONEYWELL INC.
发明人： HERB, William, R. , BURNS, David, W.
IPC分类号： G01L9/00 , G01L1/16
CPC分类号： G01L9/0019
摘要： A micromechanical sensor having a polysilicon beam that is an integral part of the diaphragm resulting in a frequency of the beam that is a direct result of the pressure applied to the external surface of the diaphragm. Fabrication of this resonant microbeam sensor has no backside wafer processing, and involves a process and layout independent of wafer thickness for high yield and robustness. Both the diaphragm and resonant beam are formed from polysilicon. The sensor may have more than one resonant beam. The sensor beam or beams may be driven and sensed by electrical or optical mechanisms. For stress isolation, the sensor may be situated on a cantilevered single crystal silicon paddle. The sensor may be recessed on the isolating die for non-interfering interfacing with optical or electrical devices.

17. 发明授权

EP0950282B1 ZERO TCF THIN FILM RESONATOR 失效
标题翻译： WITH零温度系数薄膜谐振器
公开(公告)号：EP0950282B1
公开(公告)日：2001-06-27
申请号：EP97947478.0
申请日：1997-11-13
申请人： HONEYWELL INC.
发明人： HERB, William, R. , BURNS, David, W. , YOUNGNER, Daniel, W.
IPC分类号： H03H9/24
CPC分类号： B81B3/0072 , B81B2201/0271 , H03H9/02448 , H03H9/2463 , H03H9/2473

18. 发明公开

EP0710356A1 CANTILEVERED MICROBEAM TEMPERATURE SENSOR 失效
标题翻译：温度传感器，带有悬臂科技的技术支持
公开(公告)号：EP0710356A1
公开(公告)日：1996-05-08
申请号：EP94923959.0
申请日：1994-07-19
申请人： HONEYWELL INC.
发明人： BURNS, David, W.
IPC分类号： G01D3 , G01K7 , G01L9 , G01P1
CPC分类号： G01D3/0365 , G01K7/32 , G01L9/0019 , G01P1/006
摘要： Measuring devices employing resonant strain gauges, e.g. pressure transducers or accelerometers, are compensated for variation in temperature by employing a secondary resonant microbeam in combination with the primary microbeam of the strain gauge. The secondary microbeam is mounted in cantilever fashion, with one end of the elongate polysilicon beam fixed to a silicon substrate, while the remainder of the beam is free to oscillate relative to the substrate. An oscillating drive voltage is supplied to a drive electrode mounted on the beam and a substantially uniform electrical field is maintained in the region about the beam. The frequency of oscillation is controlled by a piezo resistor formed on the beam and used for detecting instantaneous beam position relative to the substrate. The canilevered microbeam is free from the effects of residual or induced strain. Therefore, its natural resonant frequency depends upon temperature, as beam modulus of elasticity and density change with temperature. By contrast, the resonant beam of the strain gauge responds to induced strain and temperature effects. Outputs based on the natural resonant frequencies of the cantilever beam and the strain gauge beam can be combined to provide a strain gauge output compensated for temperature effects.

19. 发明授权

EP0616688B1 PIEZORESISTIVE SILICON PRESSURE SENSOR DESIGN 失效
标题翻译：草案压阻式压力传感器由硅
公开(公告)号：EP0616688B1
公开(公告)日：1996-04-17
申请号：EP93901112.8
申请日：1992-12-11
申请人： HONEYWELL INC.
发明人： BURNS, David, W. , GLEN, Max, C.
IPC分类号： G01L9/00
CPC分类号： G01L9/0055 , G01L9/0042 , Y10T29/49103
摘要： Long rectangular plates or diaphragms of microfabricated silicon structures use parallel piezoresistive strips located near the perimeter and near the center to measure strain. Primary use is for absolute pressure sensing. Multiple plates may be used.

20. 发明授权

EP0717835B1 RESONANT GAUGE WITH MICROBEAM DRIVEN IN CONSTANT ELECTRIC FIELD 失效
标题翻译：均与微机械BAR恒定电场供电振动转换器
公开(公告)号：EP0717835B1
公开(公告)日：2000-04-26
申请号：EP93921396.3
申请日：1993-09-07
申请人： HONEYWELL INC.
发明人： ZOOK, James, D. , BURNS, David, W.
IPC分类号： G01L9/00 , G01L1/18
CPC分类号： G01P15/097 , G01B7/16 , G01L1/183 , G01L9/0019 , Y10S73/01
摘要： A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam attached at both ends to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed on the substrate directly beneath and spaced apart from the flexure beam. A drive electrode is formed in or on the beam, centrered between the upper and lower bias electrodes transversely with respect to the direction of beam elongation. The upper and lower electrodes are biased at constant voltage levels, of equal magnitude and opposite polarity. The drive electrode, ordinarily biased at ground, is selectively charged by applying an oscillating drive voltage, to cause mechanical oscillation of the beam. A piezoresistor element, formed on the beam, senses beam oscillation and provides a position indicating input to the oscillator circuit that drives the beam. The beam tends to oscillate at its natural resonant frequency. The piezoresistor thus provides the natural resonant frequency to the oscillating circuit, adjusting the frequency of the beam drive signal toward coincidence with the natural resonant frequency. A shield electrode can be formed on the flexure beam between the piezoresistor and the drive electrode, to insure against parasitic capacitance. In alternative embodiments, the drive signal is applied to one of the bias electrodes to oscillate the beam, and beam oscillation is sensed capacitively.

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