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11. 发明专利

JPH10202061A TREATMENT OF GAS CONTAINING ORGANIC HALOGEN COMPOUND AND CATALYST FOR DECOMPOSITION OF ORGANIC HALOGEN COMPOUND 失效
公开(公告)号：JPH10202061A
公开(公告)日：1998-08-04
申请号：JP917597
申请日：1997-01-22
申请人： HITACHI LTD
发明人： SUGANO SHUICHI , ARATO TOSHIAKI , IKEDA SHINZO , YASUDA TAKESHI , YAMASHITA HISAO , AZUHATA SHIGERU , TAMADA SHIN
IPC分类号： B01D53/86 , B01J23/30 , B01J27/047
摘要： PROBLEM TO BE SOLVED: To decompose an org. halogen compd. with a catalyst maintaining its performance for a long time and to produce the catalyst for decomposition. SOLUTION: A flow of gas contg. less than 10vol.% org. halogen compd. is brought into contact with a catalyst contg. titania, silica and tungsten oxide as titania surface-coated with a porous layer of silica and tungsten oxide in the presence of less than 30vol.% steam based on the total flow rate of the gas to treat the org. halogen compd. The concn. of the silica is 0.5 to

12. 发明专利

JPH08239727A GAS TURBINE AND MULTIPLE ELECTRIC POWER PLANT 失效
公开(公告)号：JPH08239727A
公开(公告)日：1996-09-17
申请号：JP1149396
申请日：1996-01-26
申请人： HITACHI LTD
发明人： DOI HIROYUKI , YASUDA TAKESHI , KASHIMURA TETSUO , FUKUI HIROSHI
IPC分类号： F01D9/02 , C22C19/05 , F01K23/10 , F02C7/00
摘要： PURPOSE: To meet a recent demand for the elevation of temp. and to improve reliability by constituting a gas turbine of a material having respectively specified composition and strength characteristic. CONSTITUTION: An Ni-base alloy, having a composition consisting of, by weight ratio, 0.05-0.20% C, 20-25% Co, 15-25% Cr, 1.0-3.0% Al, 1.0-3.0% Ti, 1.0-3.0% Nb, and >=55% Ni, is used for a first-stage gas injection nozzle among the important members of turbine composed of disks of more than three stages, and further, the preheating temp. causing no crack at the time of TIG welding is regulated to =50% Ni and also having γ' and γ'' phases. Further, the disk, in which the blade is to be planted, is composed of a martensitic steel in which fracture strength at 450 deg.C and 10 h is regulated to 40kg/mm .

13. 发明专利

JPH07321289A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07321289A
公开(公告)日：1995-12-08
申请号：JP10945594
申请日：1994-05-24
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： YASUDA TAKESHI
IPC分类号： H01L27/04 , H01L21/822 , H01L27/095
摘要： PURPOSE:To incorporate an MIM type capacity which has large capacitance characteristics and high withstand voltage by arranging a through hole, which is in a second layer interlayer insulating film and reaches an electrode which is electrically connected with a second layer electrode, above a first layer electrode area. CONSTITUTION:A semiconductor integrated circuit device which has an MIM type capacity is composed of electrodes of a first layer electrode 6m to a third layer electrode 12m and interlayer insulating films 17 and 10 provided between the electrodes. Especially, a second layer electrode 9m and a through hole 11, which is on the second layer insulating film 10 and reaches the electrode which is electrically connected with the second layer electrode 9m, are arranged above the area of the first electrode 6m. Since the interlayer insulating films 7 and 10 which are to be the insulating films for the MIM type capacity and the electrodes 6m, 9m and 12m on both sides of the interlayer insulating films have a flat plane, dielectric strength is improved and the capacity is increased.

14. 发明专利

JPH06192791A WORKING ROLL FOR MULTISTAGE ROLLING AND ITS PRODUCTION 失效
公开(公告)号：JPH06192791A
公开(公告)日：1994-07-12
申请号：JP34689792
申请日：1992-12-25
申请人： HITACHI LTD , HITACHI MATERIAL ENG KK
发明人： ERA MASAYUKI , UCHIDA TETSUO , KONDO YASUO , YASUDA TAKESHI , SHIMOTAMURA OSAMU , KIKUHARA TAKASHI
IPC分类号： B21B27/00 , C21D9/38 , C22C38/00 , C22C38/52
摘要： PURPOSE:To provide a hardened roll for a multistage rolling mill having high hardness and high wear resistance and excellent in dimple resistance by means of high temp. tempering. CONSTITUTION:The working roll for multistage rolling mill is composed of a high alloy steel having a composition consisting of, by weight, 2.45-4% C, 1-2.5% Si, 0.6-2% Mn, 0.3-1.5% Ni, 6-8% Cr, >11-15% Mo, 10-20% W, 5-10% V, 12-16% Co, and the balance essentially Fe and is formed by performing hardening and tempering. By this method, the hardness of this roll is regulated to >=HRC68 and increased by >=HRC2 as compared with conventional high V-high speed tool steel and high Mo-high Co high speed tool steel, and further, wear resistance and dimple resistance can be improved by >=2 folds and i1.3 folde respectively.

15. 发明专利

JPH05226582A COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05226582A
公开(公告)日：1993-09-03
申请号：JP2502892
申请日：1992-02-12
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： YASUDA TAKESHI
IPC分类号： H01L27/04 , H01L21/338 , H01L21/822 , H01L29/812
摘要： PURPOSE:To reduce a capacity area to 1/4 of that of conventional structures by a method wherein a vertical-type two-stage MIM (metal-insulator-metal- insulator-metal) structure is constituted as a parallel circuit. CONSTITUTION:Si ions are implanted partly into the main face of a GaAs substrate 1 at two states; an n-type channel layer 3 and ohmic layers 2, 4 are formed. Then, AuGe, W, Ni and Au are vapor-deposited on the main face of the wafer in this order; a drain electrode 7, a source electrode 8, a first-layer electrode 9 and a gate electrode 6 are formed. Then, an insulating film 11 is formed on the main face of the substrate; a metal film is sputtered onto it; it is patterned; electrodes 13, 14 are former. Then, an MIM capacity C1 is formed between the electrodes 9, 14. Then, an insulating layer is formed. In succession, a through hole is formed. In addition, a metal layer is sputtered; it is patterned; an electrode 15 is formed. Then, an MIM capacity C2 is formed between the metal electrodes 14, 15. Consequently, the capacities C1, C2 are connected in parallel; an element whose capacity is the same in 1/4 of a capacity area can be formed as compared with that in conventional structures constituted of an MIMIM structure.

16. 发明专利

JPH03294049A APPARATUS FOR CONTINUOUSLY CASTING STRIP AND MOLD THEREOF 失效
公开(公告)号：JPH03294049A
公开(公告)日：1991-12-25
申请号：JP9441290
申请日：1990-04-10
申请人： HITACHI LTD , NISSHIN STEEL CO LTD
发明人： HIRANO SATOSHI , KODAMA HIDEYO , HANAWA AKIO , YASUDA TAKESHI , KIMURA TOMOAKI , NISHINO TADASHI , MATSUNAGA SHIGERU , HANAWA TAKESHI
IPC分类号： B22D11/06
摘要： PURPOSE:To stably produce a high quality cast strip at high velocity for long time by constituting a short side mold of a molten metal contacting part and an insulating layer having exothermic body in a high velocity continuous casting apparatus, which the mold synchronously shifts with the cast strip. CONSTITUTION:In the continuous casting apparatus constituted of long side molds composed of one pair of rolls 6 synchronously shifted with the cast slab 7 and the short side molds 1 arranged at end faces of the long side molds respectively and having the exothermic body 2 in inner part of the short aide mold 1, the short side mold 1 is constituted of the molten metal contacting part and the insulating layer 3 having the exothermic body 2, and the molten metal contacting part and the insulating layer 3 can be mutually shifted. By this constitution, the development of undesirable solidified shell on the short side mold surface can be prevented by generating the heat from the exothermic body 2 and the high quality cast strip can be stably produced at high velocity for long time.

17. 发明专利

JPH01135075A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH01135075A
公开(公告)日：1989-05-26
申请号：JP29212387
申请日：1987-11-20
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： YASUDA TAKESHI , SAKAMOTO KAZUMICHI
IPC分类号： H01L29/812 , H01L21/338 , H01L29/80
摘要： PURPOSE:To enhance an impurity concentration of an N-type layer and to increase a capacity by providing a leakage current blocking electrode of a Schottky barrier junction structure between a drain electrode and an ohmic electrode for forming a capacity. CONSTITUTION:An FET section 2 is formed of source region 4, drain region 5 made of n type layers, a channel region 6 made of an n-type layer extending between the regions, a source electrode 7 and a drain electrode 8, and a gate electrode 9. The electrodes 7, 8 are respectively ohmically contacted with the regions 4, 5, and the electrode 9 is formed with a Schottky barrier junction with the region 6. On the other hand, a capacity section is formed of a Schottky electrode 11 for a capacity formed on an n-type layer 10 for forming a capacity, and a drain current blocking electrode 14 for forming a surface leakage current blocking region provided between the electrode 11 and the electrode 8. A leakage current between the electrode 8 and an electrode 14 for blocking a leakage current is blocked by a depleted layer 15, not generated, and its breakdown strength is not deteriorated.

18. 发明专利

JPS6451669A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS6451669A
公开(公告)日：1989-02-27
申请号：JP20813887
申请日：1987-08-24
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： YASUDA TAKESHI , SAKAMOTO KAZUMICHI
IPC分类号： H01L29/80
摘要： PURPOSE:To improve cross-modulation characteristics and high frequency characteristics, by making the impurity concentration of an active layer immediately under a first gate lower than that of an active layer immediately under a second gate, and making the thickness of the active layer just under the first gate thinner than that of the active layer just under the second gate. CONSTITUTION:At the bottom of an active layer 6 just under a first gate electrode 7 of a dual gate GaAs.MES.FET chip 10, a P-type buried layer 11 is formed. As the result, the thickness d1 of an active layer 6 part just under a first gate electrode 7 becomes thinner than the thickness d2 of an active layer 6 part just under a second gate electrode 8. As to concentration, too, since a p-type buried layer 11 is previously formed, the impurity concentration n1 of the active layer just under the first gate electrode 7 becomes smaller than the impurity concentration n2 of the active layer 6 just under the second electrode 8. As the result, the pinch-off voltage in the first gate becomes shallow as compared with the second gate, so that the low voltage operation is enabled, and the mutual conductance is increased. Further, since the pinch-off voltage in the second gate becomes deeper than the first gate, the slow cut-off is enabled, so that cross modulation distortion is improved.

19. 发明专利

JPS63136467A AL-LI BASE ALLOY ELECTRODE FOR NONAQUEOUS SECONDARY BATTERY 失效
公开(公告)号：JPS63136467A
公开(公告)日：1988-06-08
申请号：JP28178486
申请日：1986-11-28
申请人： HITACHI LTD
发明人： OKAYAMA AKIRA , YANAI YOSHIMI , YASUDA TAKESHI , KURODA TETSUO
IPC分类号： H01M4/46 , C22C21/00 , H01M4/40
摘要： PURPOSE:To lengthen the charge-discharge cycle life and to enhance the energy density by using a thin plate obtained by adding Bi or Nb to an Al-Li alloy containing a specific ratio of Li as an electrode. CONSTITUTION:Al-4-40 atm% Li alloy containing 0.1-3 atm% Bi or Nb is melted in an inactive atmosphere, and the molten alloy is quenched to directly form a thin plate. The thin plate is heated at 300-600 deg.C for heat treatment. The thin plate directly formed from the molten alloy by quenching has a nonequelibrium structure, contains more lithium as solid solution than in an equelibrium structure, and fine crystals of LiAl are formed to enhance toughness. By applying heat treatment to the thin alloy plate, lithium supersaturated in the base as solid solution is uniformly deposited as fine LiAl crystals, and the Li-Al base thin plate is given flexbility.

20. 发明专利

JPS62249489A COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62249489A
公开(公告)日：1987-10-30
申请号：JP9214686
申请日：1986-04-23
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KITAHARA TOSHIAKI , YASUDA TAKESHI , YANAGI YOSHIKAZU , SAKAMOTO KAZUMICHI , YUKIMOTO TOMIHISA
IPC分类号： H01L29/812 , H01L21/338 , H01L29/80 , H01L29/866
摘要： PURPOSE:To reduce lateral diffusion by a method wherein a p-n junction surface is laid along the direction which makes right angle with the direction to which the lateral diffusion of an impurity which determines p-type or n-type is small. CONSTITUTION:Not to speak of a back-to-back protective diode, the p-n junction surface of a p-n junction structure diode is laid along the direction which makes right angle with the direction to which the lateral diffusion of an impurity for forming the p-n junction is small. The orientation of each p-n junction surface of the back-to-back protective diode is so selected as to be the direction along a crystal direction which is parallel to the crystal face (0-1-1) of the orientation flat (OF) 4 of an wafer l if the crystal face of the main surface of the wafer 1 is (100). Therefore, when zinc is diffused to form the p-n junction of the protective diode, as the lateral diffusion of zinc is small, the distance between the p-n junction surface and an electrode provided on the n-type region becomes short and the ON resistance of the diode is reduced.

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