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    • 11. 发明专利
    • RISE OF MASS PRODUCTION IN SEMICONDUCTOR MANUFACTURING PROCESS, INSPECTION OF FOREIGN SUBSTANCE IN MASS PRODUCTION LINE AND DEVICE THEREOF
    • JPH0456245A
    • 1992-02-24
    • JP16574390
    • 1990-06-26
    • HITACHI LTD
    • NOGUCHI MINORUKENBO YUKIOMORIOKA HIROSHIYAMAGUCHI HIROSHIKONO MAKIKOOSHIMA YOSHIMASA
    • H01L21/66
    • PURPOSE:To maximize foreign substance detection, analysis and evaluation functions necessary at the rising time of mass production, to reduce a production line at the time of the mass production and to make possible a reduction in the cost of the manufacture of a semiconductor by a method wherein a detection, analysis and evaluation system for foreign substances at the rising time of the mass production is separated from a mass production line and results obtained by the system are monitored by a simple monitoring device only in the mass production line. CONSTITUTION:When the control situation of foreign substances on a material, in a process, on a device and in an environment is evaluated using sampling wafers 401 to 405 at the rising time of mass production in a semiconductor manufacturing process, a detection, analysis and evaluation system 1002 for the foreign substances at the rising time of the mass production is separated from a mass production line and results obtained by the system 1002 are fed-back to the mass production line and are monitored by a simple monitoring device 1001 only in the mass production line. For example, in the above foreign substance detection, analysis and evaluation system 1002, foreign substances on sampling wafers 401 to 405 are detected and thereafter, the kinds of the elements of the foreign substances are analyzed by an STM/ STS 603. The analyzed data is ready-stored in advance as data base and the data base is compared with data on an object to be analyzed. Thereby, the kinds of the elements of the foreign substances are decided.
    • 12. 发明专利
    • METHOD AND APPARATUS FOR DETECTING FOREIGN MATTER
    • JPH03102249A
    • 1991-04-26
    • JP23992889
    • 1989-09-18
    • HITACHI LTD
    • KOIZUMI MITSUYOSHIOSHIMA YOSHIMASA
    • G01N21/88G01N21/94G01N21/956H01L21/027H01L21/30
    • PURPOSE:To inspect the fine foreign matter on a sample at a high speed by discriminating the same from a pattern by alternately performing the first and second illuminations in a time sharing manner and detecting the scattering beam from an objective body in a time sharing manner in synchronous relation to both illuminations by one photoelectric converter. CONSTITUTION:An oblique illumination system L performing oblique illumination is constituted of a laser beam source 15 and a condensing lens 15b. A vertical illumination system H performing linear vertical illumination (second illumination) is constituted of a laser beam source 1, a condensing lens 21, a cylindrical lens 14, a translucent prism 3, a field lens 4 and an objective lens 6. Detection systems L, H are constituted of a shield plate 18, an image forming lens 16, a unidimensional solid-state imaging device (detector) 20 and a signal processing circuit 300. The scattering beams generated by the illumination systems L, H pass through the objective lens 6, the translucent prism 3 and the shield plate 18 to be formed into an image on the detector 20. The first and second illuminations are performed in a time sharing manner to emit beams in a pulsating manner and, by synchronously detecting the outputs VL, VH of the detector 20, scattering beams due to two kinds of illumination beams can be separated and detected.
    • 13. 发明专利
    • METHOD AND APPARATUS FOR DETECTING FOREIGN MATTER
    • JPH03102248A
    • 1991-04-26
    • JP23992789
    • 1989-09-18
    • HITACHI LTD
    • KOIZUMI MITSUYOSHIOSHIMA YOSHIMASA
    • G01N21/88G01N21/94G01N21/956H01L21/027H01L21/30
    • PURPOSE:To inspect the fine foreign matter on a sample at a high speed by discriminating the same from a pattern by mounting an optical system wherein the foreign matter on an objective body is emphasized by an oblique illumination means to be detected by the first photoelectric converter and the background on the objective body is emphasized by a vertical illumination means to be detected by the second photoelectric converter and a comparing means. CONSTITUTION:An oblique illumination system L is constituted of a laser beam source 15 and a condensing lens 15b and a vertical illumination system H is constituted of a laser beam source 1, a condensing lens 21, a cylindrical lens 14, a translucent prism 3, a field lens 4 and an objective lens 6. In a detection system L, the scattering beam reflected by a color separation prism 150 is formed into an image by an image forming lens 9 to be taken by a unidimensional solid-state imaging element 20H. A detection system H is constituted of a shield plate 18, an image forming lens 16 and a unidimensional solid-state imaging element 20H. The output signals VL, VH detected by the detectors 20L, 20H are taken out through an analogue comparing and dividing circuit 100, a binarization circuit 101 and an OR circuit 22. By this constitution, the fine foreign matter on an objective body with a pattern can be stably detected with high sensitivity.
    • 14. 发明专利
    • FOREIGN MATTER DETECTING APPARATUS
    • JPH01263541A
    • 1989-10-20
    • JP9131088
    • 1988-04-15
    • HITACHI LTD
    • YOSHIDA MINORUSHIBA MASATAKAUTO YUKIOKOIZUMI MITSUYOSHIOSHIMA YOSHIMASA
    • G01N21/84G01N21/88G01N21/94G01N21/956H01L21/027H01L21/66
    • PURPOSE:To enable the reliable detection of foreign matters, by providing a plurality of illuminating means while disposing them so that light fluxes emitted from adjacent illuminating means overlap partly each other. CONSTITUTION:A glass substrate 1 is set on a setting table 8, and a film 2 for preventing the sticking of foreign matters is stuck on the substrate 1. A foreign matter on the surface of the film 2 gives scattered light by the application of illuminating light of an illuminating light source 4 and an image thereof is projected onto a light- sensing surface of a photoelectric conversion element 7. Detection of the foreign matters in the direction X of the film 2 is executed in this way, and by moving the setting table 8 in the direction Y occasionally by means of a motor 10, a feed screw 9, etc., the detection of the foreign matters is implemented on the whole of the film 2. In this case, a lens array 5 is provided for projecting onto the light-sensing surface of the element 7 a strip-shaped illuminating element composed of a plurality of light fluxes emitted from a plurality of light sources 4 onto the surface of the film 2, and it is constructed of a large number of imaging lenses. By arranging these imaging lenses in a large number in a straight line above the film 2, the foreign matters on the surface of the film 2 can be detected in a wide area without fail.
    • 15. 发明专利
    • FOREIGN MATTER INSPECTION DEVICE
    • JPS6326559A
    • 1988-02-04
    • JP16970186
    • 1986-07-21
    • HITACHI LTD
    • KOIZUMI MITSUYOSHIOSHIMA YOSHIMASA
    • H01L21/66G01N21/88G01N21/94G01N21/956H01L21/30
    • PURPOSE:To miniaturize a device and to stabilize the output light of a semiconductor laser by using the semiconductor laser which incorporates a sensor for output light monitor and performing feedback control with the output of the sensor. CONSTITUTION:The semiconductor laser 16 incorporates a photodiode 18 as the sensor for output light monitor. A driving circuit 22 supplies a current proportional to an input voltage to the laser 16, which emits light and the diode 18 receives a part of the output light of the laser 16 and outputs a current proportional to the quantity of the photodetected light to bring the laser 16 under feedback control. A sample holding circuit 24 holds the quantity of this feedback. Laser irradiation is performed opposite from right and left so as to detect anisotropic foreign matter stably. Further, a shutter which interrupts laser beam other than the output light of the laser 16 is provided. Then, the feedback control over the output light is performed in a state wherein no other laser beam is incident only right before foreign matter inspection, and the feedback quantity is held during the inspection to drive the laser 16 without using the output of the diode 18, thereby performing the stable foreign matter detection.
    • 17. 发明专利
    • METHOD OF INSPECTING SEMICONDUCTOR WAFER
    • JPS6286740A
    • 1987-04-21
    • JP22673585
    • 1985-10-14
    • HITACHI LTD
    • OSHIMA YOSHIMASAKOIZUMI MITSUYOSHIYAMAUCHI YOSHIHIKO
    • H01L21/66G01N21/88G01N21/94G01N21/956
    • PURPOSE:To inspect a fine foreign matter and a pattern defect with high sensitivity by a method wherein the defect signal generating position of a wafer is stored, the generating position is compared with the previous defect signal generating positions of the wafer and the signal generating from the same position is removed as false information. CONSTITUTION:The values of the coordinates of the detected foreign matter in a wafer inspected previously are stored in a foreign matter memory 38. When a foreign matter signal 37 is generated, the values of coordinate counters 26x and 26y are stored in latches 41 and 42. Simultaneously, the contents of the memory 38 are read out in order and are temporarily stored in latches 39 and 40. The absolute values of differences between the latch 39 and the latch 41 and between the latch 39 and the latch 42 are calculated b airhmetic circuits 43 and 44. The deviation between X and Y direction coordinats is found, the deviation amount is compared with the allowable value in comparison circuits 45, 46 and when the deviation amount is the allowable value or less, a coincidence signal is outputted. The logical product of the outputs of the comparison circuits 45 and 46 is calculated at an AND gate 47 and the output of the gate 47 is inverted in an inverter 48. If the values of the same coordinates as those of the detected foreign matter are stored in the foreign matter memory 38, the output of the inverter 48 becomes 0.