会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 11. 发明专利
    • PATTERN FORMATION
    • JPS5877230A
    • 1983-05-10
    • JP17566181
    • 1981-11-04
    • HITACHI LTD
    • WADA YASUOMOCHIJI KOUZOUKIMURA TAKESHIUTAKA MASATOSHIOOHAYASHI HIDEHITO
    • H01L21/027G03F7/20H01L21/30
    • PURPOSE:To obtain a very fine pattern with high accuracy by a method wherein hydrogen ion beams are selectively implanted in the required parts of a positive- type photoresist film including a diazocompound as sensitive groups and then ultraviolet rays are aimed at the whole face including the required parts of the positive-type photoresist film and next, only the parts irradiated by the ultraviolet rays are developed and eliminated. CONSTITUTION:A positive-type photoresist film 2 including a diazo compound as sensitive groups is applied on an Si wafer 1 with a thickness of about 1mum and prebaking is done at 90 deg.C for about 20min. Next, after irradiating H ions 3 at the required parts 4 of the film 2, the whole face including the required parts is exposed by using ultraviolet rays 5. In this way, sensitive groups at the parts 4 irradiated by the H irons are destructed and the film 2 is changed to the state not exposed by the ultraviolet rays and only the places except the parts 4 are maintained under the condition permitting exposure and development by the ultraviolet rays. After that, the places except the parts 4 are developed and removed and a desired pattern by the parts 4 is left on a substrate 1.