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11. 发明专利

JPS63282259A SPUTTERING DEVICE 失效
公开(公告)号：JPS63282259A
公开(公告)日：1988-11-18
申请号：JP11686587
申请日：1987-05-15
申请人： HITACHI LTD
发明人： ONO YASUNORI , SATO TADASHI , NATSUI KENICHI , HAKAMATA YOSHIMI , MORIJIRI MAKOTO , SAITO MASAKATSU , AOKI SHIGEO , OISHI SEITARO
IPC分类号： C23C14/34
摘要： PURPOSE:To prevent the generation of crevasses and cracks in the deposited film at the stepped part of a substrate by depositing the sputtered particles from a target on the substrate, and simulataneously projecting a particle beam on the substrate in the title counter target-type sputtering device. CONSTITUTION:A couple of counter targets 1, the substrate 4, a particles beam generator 20, and a sputtered particles filter 8 are arranged in a vacuum vessel 15. A permanent magnet 3 is placed on the rear of a target holder 2, and a magnetic field is generated in the direction vertical to the surface of the target 1. The inside of the vessel 15 is firstly evacuated, the flow rate of gaseous Ar is adjusted to provide a specified pressure in the generator 20 and between the targets 1, a high-frequency coil 22 is energized to produce plasma, the ion in the plasma is allowed to collide with the target 1, and the particles sputtered from the targets are deposited on the substrate 4. Meanwhile, the ion beam drawn out from the generator 20 is projected on the substrate 4. By this method, the generation of crevasses and cracks can be prevented even in the film formed on the stepped part on the substrate 4.

12. 发明专利

JPS63248036A ION SOURCE 失效
公开(公告)号：JPS63248036A
公开(公告)日：1988-10-14
申请号：JP8004287
申请日：1987-04-01
申请人： HITACHI LTD
发明人： OISHI SEITARO , HASHIMOTO ISAO , SEKIMOTO SHINYA
IPC分类号： H01J27/08
摘要： PURPOSE:To make an anode electrode hard to be stuck with a plasma product by selecting the material of the anode electrode to the material generating a product easy to be gasified by the reaction with the plasma gas component. CONSTITUTION:A material evaporated from the surface of an anode electrode 7 by the high vapor pressure of a product generated by the reaction between the plasma gas component and the material component of the anode electrode 7 is used as the material of the anode electrode 7. For example, MoF6 is generated in such a reaction configuration as 3CF4+2Mo 3C+2MoF6, this product constitutes an anode electrode with the very high vapor pressure (easy to evaporate). Accordingly, it is evaporated and removed by the radiation heat from a filament, and the cleaning or the like is not required.

13. 发明专利

JP2002113353A MACHINING AMOUNT MEASURING INSTRUMENT AND ION BEAM ETCHING EQUIPMENT USING THE SAME 失效
公开(公告)号：JP2002113353A
公开(公告)日：2002-04-16
申请号：JP2000309288
申请日：2000-10-04
申请人： HITACHI LTD
发明人： TANIGUCHI HITOSHI , HIYOSHI YASUO , SONOBE HIDEKI , OKAWA TAKAKO , MIZUSHIMA AKIKO , OISHI SEITARO
IPC分类号： B01J19/00 , C23F4/00 , G11B5/60
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive and simple measuring instrument for machining amounts having high accuracy in dry etching equipment and the dry etching equipment using the same and capable of controlling the machining amounts. SOLUTION: A detecting device for detecting acceleration electrode current, deceleration electrode current, acceleration electrode voltage, deceleration electrode voltage, shutter opening/closing signals, and other machining conditions is installed to a machining equipment, such as a dry etching device, more preferably, the ion beam etching equipment, sputter etching device or ion milling device and the etching quantity of a workpiece is not directly measured from the changes in the working conditions, such as the acceleration electrode current, the deceleration electrode current, the acceleration electrode voltage, the deceleration electrode voltage, and the shutter opening/closing signals, but is estimated from the measured values and is displayed. The machining equipment is thereafter automatically stopped at a point where the set machining amount is attained if needed.

14. 发明专利

JP2000301353A ION MILLING METHOD AND ITS DEVICE 失效
公开(公告)号：JP2000301353A
公开(公告)日：2000-10-31
申请号：JP11427999
申请日：1999-04-22
申请人： HITACHI LTD
发明人： HIYOSHI YASUO , TANIGUCHI HITOSHI , SASAKI SHINJI , OKAWA TAKAKO , OISHI SEITARO
IPC分类号： H01J27/08 , B23K15/00 , C23F4/00 , H01J37/08 , H01J37/317 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an ion milling method and its device wherein a uniform and stable ion beam current is dram out of a large diameter ion source electrode and whereby working precision is improved even if a thermal deformation is generated in the large diameter ion source electrode. SOLUTION: In an ion source composed of a plasma chamber in which an introduced gas is made to be plasmatic and an ion source electrode in which ion is drawn out of the plasma chamber, the electrode is respectively divided as a means for forming it into the large diameter, each block of the divided electrode is combined and independent, a gap formed between the divided adjacent blocks is closed by cross shaped pressing metal fittings 11, 12 and moreover a gap between an acceierative electrode 6 and a decelerative electrode 7 in the central part of the electrode is connected by an insulating spacer.

15. 发明专利

JPH10317172A ION BEAM MACHINING DEVICE 失效
公开(公告)号：JPH10317172A
公开(公告)日：1998-12-02
申请号：JP13193997
申请日：1997-05-22
申请人： HITACHI LTD
发明人： NAKAGAWA YUKIO , OISHI SEITARO , TANAKA SHIGERU , ONUKI HISAO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To achieve the ion beam machining of high speed and high quality without coarsening the surface of a substrate by achieving the etching of a sample with the beam power using an ion beam machining device, and performing the switching to smaller beam power when the machining depth exceeds the thickness of a residual part of the sample. SOLUTION: The voltage is applied between a filament 3 and a chamber wall by an arc power supply 5 within an ion source chamber 1a of a vacuum container 1 to change the gas into the plasma. The ions in the plasma are drawn out by a draw-out electrode comprising an acceleration electrode 9 and a deceleration electrode 10, and introduced into a machining chamber 1b as the ion beam 20. A substrate 100 on a substrate holder 13 is irradiated with the ion beam 20 to achieve the etching. When the etching depth exceeds the thickness of a residual part of the substrate, the beam power is switched to the smaller one than the beam power during the first etching by an output power supply control device 12 to be connected to each power supply, and the residual part is etched.

16. 发明专利

JPH10188872A ION BEAM WORK DEVICE 失效
公开(公告)号：JPH10188872A
公开(公告)日：1998-07-21
申请号：JP34747496
申请日：1996-12-26
申请人： HITACHI LTD
发明人： OISHI SEITARO , ONUKI HISAO , TANAKA SHIGERU
IPC分类号： B23K15/00 , H01J27/08 , H01J37/08 , H01J37/248 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To easily execute measurement of continuity and insulating resistance. SOLUTION: In an ion beam work device consisting of an ion source arc chamber 1 forming plasma of introduced gas to generate ions, vacuum chamber 6 housing a sample, ion source electrodes 2A, 2B drawing out ions from the ion source arc chamber toward the sample, and an ion source power part 100 supplying power to the ion source electrodes 2A, 2B, outside of the ion source arc chamber 1 and the vacuum chamber 6, a switching terminal 18A, 18B is provided, which switches electrical connection/disconnection between the ion source electrodes 2A, 2B and the ion source power part 100.

17. 发明专利

JPH10140348A ION BEAM WORKING DEVICE 失效
公开(公告)号：JPH10140348A
公开(公告)日：1998-05-26
申请号：JP30179696
申请日：1996-11-13
申请人： HITACHI LTD
发明人： NAKAGAWA YUKIO , OISHI SEITARO , TANAKA SHIGERU , ONUKI HISAO
IPC分类号： C23C14/52
摘要： PROBLEM TO BE SOLVED: To extremely simply and securely detect the end point regardless of the kinds of materials and the dispersion of film thickness. SOLUTION: At the time of observation, the irradiation of ion beams 20 is intercepted, and furthermore, a prove 21 turns toward the side of a substrate 13, by which the image of the surface of the substrate is picked up, so that the milling stage of the substrate 13 can directly be visualized by a display 24 and, at this time, even in the case its state is the one short of milling, the prove 21 and a shutter 25 return the original positions, by which milling can swiftly be continued, so that the detection of the end point can correctly be executed.

18. 发明专利

JPH06330316A ION BEAM MACHINING SYSTEM 失效
公开(公告)号：JPH06330316A
公开(公告)日：1994-11-29
申请号：JP11438693
申请日：1993-05-17
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO , TANAKA SHIGERU , KUROGANE MASAHARU
IPC分类号： C23C14/50 , H01J37/20 , H01J37/317 , H01L21/265
摘要： PURPOSE:To cool an annular sample presser plate without increasing its thickness or decreasing the strength and to improve the quality of a sample substrate by providing an annular coolant circulating pipe to the presser plate along the periphery of the presser plate. CONSTITUTION:Since a sample presser plate 15A is cooled by the cooling water flowing in a coolant circulating pipe 15B, the surface of a sample substrate 5 is not heated even if the plate 15A is pressed on the substrate 5, hence the substrate 5 is not damaged by the heat from the plate 15A, and the plate 15A is sufficiently cooled even though the plate 15A is moved up and down and rotated at the same time. Further, the pipe 15B is furnished along the periphery of the plate 15A and the ion beam irradiation is not affected at all by the pipe 15B.

19. 发明专利

JPH0379761A ION BEAM SPUTTERING DEVICE AND NEUTRALIZER 失效
公开(公告)号：JPH0379761A
公开(公告)日：1991-04-04
申请号：JP21454189
申请日：1989-08-21
申请人： HITACHI LTD
发明人： ISHIKAWA YASUSHI , OISHI SEITARO , ISADA NAOYA , SAKUMICHI KUNIYUKI
IPC分类号： C23C14/46
摘要： PURPOSE:To prevent the lowering of a sputtering rate by radiating electrons from an electron supplying source provided off the orbit of an ion beam and imparting the momentum directing toward a desired direction to the electrons by a directivity imparting means. CONSTITUTION:A target 6 is irradiated with the ion beam 5 radiated from an ion generator 1 and a film is formed on a substrate 8 by sputtering particles 7 released from the target 6. A filament 9a is heated at this time to radiate thermions 12 and the momentum is imparted to the electrons 12 by the electric field formed by applying a negative potential to a conductor 11a by a decelerating power source 10 to accelerate the electrons 12 toward the ion beam 5 and the target 6. The electrons 12 are, therefore, splashed, are taken into the ion beam 5 and neutralized without generating an electron sleeve around the filament 9a. The target 6 is simultaneously neutralized, by which the lowering of the sputtering rate is prevented and the film forming rate is improved.

20. 发明专利

JPH031428A ION BEAM APPARATUS 失效
公开(公告)号：JPH031428A
公开(公告)日：1991-01-08
申请号：JP13555489
申请日：1989-05-29
申请人： HITACHI LTD
发明人： KADOOKA HIDESHI , OISHI SEITARO , HASHIMOTO ISAO
IPC分类号： H01J27/08 , H01J37/08 , H01J37/317
摘要： PURPOSE:To prevent gas discharge from an ion source electrode with a simple method by making the ion source electrode have a multilayer structure by coating a material having a dense atom distance on a prescribed part of the electrode. CONSTITUTION:An ion source electrode is formed to have a multilayer structure and the surface layer 16 in the opposite side to an ion source chamber is prepared from a material having a dense atom distance as compared to the other layer 13. The dense layer 16 is easily formed by a coating process. The material for the surface layer 16 has different atomic structure from that for the other layer 13 or in the case of the same material, the atomic arrangement of the material for layer 16 should be different from one for the other layer 13. A gaseous substance 17 generated in the layer 13 and adsorbed is stopped permeating through the layer 16 having dense atom distance and discharged as an out gas to the opposite side of the ion source chamber, resulting in no bad effect on the sample.

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