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11. 发明授权

US08092698B2 Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions 有权
标题翻译：通过包括使用特定蚀刻剂溶液的工艺形成半导体器件的方法
公开(公告)号：US08092698B2
公开(公告)日：2012-01-10
申请号：US12199928
申请日：2008-08-28
申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： B44C1/22
CPC分类号： C23F1/28 , B82Y25/00 , B82Y40/00 , C23F1/16 , C23F1/26 , C23F1/44 , H01F41/308 , H01F41/34 , H01L21/32134 , H01L43/12
摘要： The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
摘要翻译：本发明提供了包括去离子水和具有羧基和羟基自由基的有机酸的蚀刻剂溶液。还公开了形成磁存储器件的方法。

12. 发明授权

US07985999B2 Semiconductor device having capacitor 失效
标题翻译：具有电容器的半导体器件
公开(公告)号：US07985999B2
公开(公告)日：2011-07-26
申请号：US12659724
申请日：2010-03-18
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
摘要翻译：可以提供具有电容器的半导体器件及其制造方法。制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层：各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极在模具和接触电极孔中。各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

13. 发明授权

US07820508B2 Semiconductor device having capacitor and method of fabricating the same 有权
公开(公告)号：US07820508B2
公开(公告)日：2010-10-26
申请号：US11593067
申请日：2006-11-06
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.

14. 发明申请

US20080314868A1 METHODS OF FORMING SEMICONDUCTOR DEVICES FORMED BY PROCESSES INCLUDING THE USE OF SPECIFIC ETCHANT SOLUTIONS 有权
标题翻译：形成由包括使用特定溶剂解决方案的方法形成的半导体器件的方法
公开(公告)号：US20080314868A1
公开(公告)日：2008-12-25
申请号：US12199928
申请日：2008-08-28
申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： C23F1/00
CPC分类号： C23F1/28 , B82Y25/00 , B82Y40/00 , C23F1/16 , C23F1/26 , C23F1/44 , H01F41/308 , H01F41/34 , H01L21/32134 , H01L43/12
摘要： The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
摘要翻译：本发明提供了包括去离子水和具有羧基和羟基自由基的有机酸的蚀刻剂溶液。还公开了形成磁存储器件的方法。

15. 发明申请

US20060097410A1 Semiconductor capacitor structure and method for manufacturing the same 有权
公开(公告)号：US20060097410A1
公开(公告)日：2006-05-11
申请号：US11312952
申请日：2005-12-19
申请人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： H01L23/58
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91
摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

16. 发明授权

US07018892B2 Semiconductor capacitor structure and method for manufacturing the same 有权
公开(公告)号：US07018892B2
公开(公告)日：2006-03-28
申请号：US10835142
申请日：2004-04-28
申请人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852 , Y10S438/978
摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

17. 发明申请

US20060028865A1 Etchant solutions and methods of forming semiconductor devices formed by processes including the same 审中-公开
标题翻译：蚀刻液的形成方法及其制造方法
公开(公告)号：US20060028865A1
公开(公告)日：2006-02-09
申请号：US11192700
申请日：2005-07-29
申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： G11C11/15
CPC分类号： C23F1/28 , B82Y25/00 , B82Y40/00 , C23F1/16 , C23F1/26 , C23F1/44 , H01F41/308 , H01F41/34 , H01L21/32134 , H01L43/12
摘要： The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
摘要翻译：本发明提供了包括去离子水和具有羧基和羟基自由基的有机酸的蚀刻剂溶液。还公开了形成磁存储器件的方法。

18. 发明申请

US20100187654A1 Semiconductor device having capacitor and method of fabricating the same 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US20100187654A1
公开(公告)日：2010-07-29
申请号：US12659724
申请日：2010-03-18
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L29/92
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
摘要翻译：可以提供具有电容器的半导体器件及其制造方法。制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层：各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极在模具和接触电极孔中。各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

19. 发明授权

US07122478B2 Method of manufacturing a semiconductor device using a polysilicon etching mask 失效
标题翻译：使用多晶硅蚀刻掩模制造半导体器件的方法
公开(公告)号：US07122478B2
公开(公告)日：2006-10-17
申请号：US10818266
申请日：2004-04-02
申请人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang Jun Choi
发明人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang Jun Choi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76897 , H01L21/31144 , H01L21/32134 , H01L21/32137 , H01L21/76802 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact hole in the interlayer dielectric by etching the interlayer dielectric using the polysilicon layer pattern as an etching mask; (d) removing the polysilicon layer pattern by an etching process that has a large etching selectivity of the polisilicon layer with respect to the interlayer dielectric and about 3% or less etching uniformity; and (e) forming a contact by filling the contact hole with a conductive material.
摘要翻译：使用多晶硅层作为蚀刻掩模制造半导体器件的方法包括：（a）在半导体衬底上形成层间电介质; （b）在层间电介质上形成多晶硅层图案; （c）通过使用多晶硅层图案作为蚀刻掩模蚀刻层间电介质，在层间电介质中形成接触孔; （d）通过蚀刻工艺去除多晶硅层图案，所述蚀刻工艺对于硅酸盐层相对于层间电介质具有大的蚀刻选择性，蚀刻均匀性为约3％以下; 和（e）通过用导电材料填充接触孔来形成接触。

20. 发明授权

US08110499B2 Method of forming a contact structure 有权
标题翻译：形成接触结构的方法
公开(公告)号：US08110499B2
公开(公告)日：2012-02-07
申请号：US12437390
申请日：2009-05-07
申请人： Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
发明人： Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/76814 , H01L21/76846 , H01L21/76855 , H01L23/485 , H01L27/24 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.
摘要翻译：可以在具有接触区域的物体上形成绝缘层。绝缘层可以被部分蚀刻以形成暴露接触区域的开口。可以在暴露的接触区域上形成包括硅和氧的材料层。可以在包括硅和氧的材料层上形成金属层。包括硅和氧的材料层可以与金属层反应，以至少在接触区域上形成金属氧化物硅化物层。可以在金属氧化物硅化物层上形成导电层以填充开口。

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