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    • 11. 发明申请
    • INTEGRATED MICROMACHINED THERMAL MASS FLOW SENSOR AND METHODS OF MAKING THE SAME
    • 一体化微孔热流量传感器及其制造方法
    • US20090164163A1
    • 2009-06-25
    • US11864804
    • 2007-09-28
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • G01F25/00G01F1/69
    • G01F1/6845G01F1/692G01F1/6965G01F1/698
    • An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.
    • 通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。 该质量流量传感器包括上游薄膜加热器,下游薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器和传感器的热隔离膜与基底不接触。 该质量流量传感器用三组电路操作,第一电路用于测量第一流量范围内的流量,第二电路用于测量在第二流量范围内的流量,以及第三电路 用于测量所述第一流量范围或所述第二流量范围内的流量的差分配置,以显着增加流量测量的范围,并提供可选的浓度测量,同时保持高度的测量精度。
    • 13. 发明申请
    • MEMS TIME-OF-FLIGHT THERMAL MASS FLOW METER
    • MEMS时间飞行热量流量计
    • US20120216629A1
    • 2012-08-30
    • US13035639
    • 2011-02-25
    • Liji HuangChih-Chang ChenYahong YaoXiaozhong Wu
    • Liji HuangChih-Chang ChenYahong YaoXiaozhong Wu
    • G01F1/708
    • G01F1/7084G01F1/72
    • An apparatus comprising a micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon flow sensor, a flow channel package, and a driving circuitry, which operates in a working principle of thermal time-of-flight (TOF) to measure gas or liquid flow speed, is disclosed in the present invention. The micromachining technique for fabricating this MEMS time-of-flight silicon thermal flow sensor can greatly reduce the sensor fabrication cost by batch production. This microfabrication process for silicon time-of-flight thermal flow sensors provides merits of small feature size, low power consumption, and high accuracy compared to conventional manufacturing methods. Thermal time-of-flight technology in principle can provide accurate flow speed measurements for gases regardless of its gas compositions. In addition, the present invention further discloses the package design and driving circuitry which is utilized by the correlated working principle.
    • 一种包括微加工(也称为MEMS,微机电系统)硅流量传感器,流动通道封装和驱动电路的装置,其以热时间飞行(TOF)的工作原理工作以测量气体或液体流量 速度,在本发明中公开。 用于制造这种MEMS飞行时间硅热流量传感器的微加工技术可以通过批量生产大大降低传感器制造成本。 与传统的制造方法相比,这种用于硅时间飞行热流传感器的微加工工艺具有小特征尺寸,低功耗和高精度的优点。 原理上,热时间飞行技术可以为气体提供准确的流速测量,无论其气体成分如何。 此外,本发明还公开了通过相关工作原理利用的封装设计和驱动电路。
    • 15. 发明授权
    • Method for forming micromachined liquid flow sensor
    • US10908006B2
    • 2021-02-02
    • US16278962
    • 2019-02-19
    • Chih-Chang ChenLiji HuangYahong Yao
    • Chih-Chang ChenLiji HuangYahong Yao
    • G01F1/684
    • The micromachined liquid flow sensor devices are enclosed with silicon nitride film as passivation layer to protect device from penetration of liquid into device and avoid the damages of erosion or short circuit etc. One thin layer of silicon dioxide is deposited underneath the silicon nitride layer to enhance the adhesion and reliability of the passivation layer for various applications. The incorporation of silicon dioxide film had successfully provided reliable passivation protection especially for microfluidic devices application. In order to avoid flow turbulence caused by wire bonding wires, the wire bonding wires are omitted by deploying through-substrate conductive vias whereas connected to the carrier printed circuit board of sensor chip. The present invention disclosed a novel micromachining process and designed structure to form hermit sealing between the sensor chip and the carrier printed circuit board. The hermit sealing underneath the sensor chip can protect the bonding connections from exposing to liquid flow media and avoid short circuitry or induce undesired chemical corrosion. More particularly, the embodiments of the current invention relates to formation steps of a micromachined liquid flow sensor including passivation and protection of bonding connection to its carrier printed circuit board, which is therefore capable to offer superb accuracy and reliability for liquid flow measurement.
    • 16. 发明申请
    • Method for Forming Micromachined Liquid Flow Sensor
    • US20200264022A1
    • 2020-08-20
    • US16278962
    • 2019-02-19
    • Chih-Chang ChenLiji HuangYahong Yao
    • Chih-Chang ChenLiji HuangYahong Yao
    • G01F1/684
    • The micromachined liquid flow sensor devices are enclosed with silicon nitride film as passivation layer to protect device from penetration of liquid into device and avoid the damages of erosion or short circuit etc. One thin layer of silicon dioxide is deposited underneath the silicon nitride layer to enhance the adhesion and reliability of the passivation layer for various applications. The incorporation of silicon dioxide film had successfully provided reliable passivation protection especially for microfluidic devices application. In order to avoid flow turbulence caused by wire bonding wires, the wire bonding wires are omitted by deploying through-substrate conductive vias whereas connected to the carrier printed circuit board of sensor chip. The present invention disclosed a novel micromachining process and designed structure to form hermit sealing between the sensor chip and the carrier printed circuit board. The hermit sealing underneath the sensor chip can protect the bonding connections from exposing to liquid flow media and avoid short circuitry or induce undesired chemical corrosion. More particularly, the embodiments of the current invention relates to formation steps of a micromachined liquid flow sensor including passivation and protection of bonding connection to its carrier printed circuit board, which is therefore capable to offer superb accuracy and reliability for liquid flow measurement.
    • 17. 发明申请
    • Micromachined mass flow sensor and methods of making the same
    • 微加工质量流量传感器及其制造方法
    • US20070011867A1
    • 2007-01-18
    • US11523436
    • 2006-09-19
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • H01B13/00
    • G01F1/6845Y10T29/49082Y10T29/49083Y10T29/49117Y10T29/49124Y10T29/49155
    • A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.
    • 通过在取向<100>的N或轻掺杂P型硅衬底上进行微加工工艺的方法制造质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。
    • 19. 发明授权
    • MEMS time-of-flight thermal mass flow meter
    • MEMS飞行时间热质量流量计
    • US08794082B2
    • 2014-08-05
    • US13035639
    • 2011-02-25
    • Liji HuangXiaozhong WuYahong YaoChih-Chang Chen
    • Liji HuangXiaozhong WuYahong YaoChih-Chang Chen
    • G01F1/708G01F1/68G01F1/72
    • G01F1/7084G01F1/72
    • An apparatus comprising a micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon flow sensor, a flow channel package, and a driving circuitry, which operates in a working principle of thermal time-of-flight (TOF) to measure gas or liquid flow speed, is disclosed in the present invention. The micromachining technique for fabricating this MEMS time-of-flight silicon thermal flow sensor can greatly reduce the sensor fabrication cost by batch production. This microfabrication process for silicon time-of-flight thermal flow sensors provides merits of small feature size, low power consumption, and high accuracy compared to conventional manufacturing methods. Thermal time-of-flight technology in principle can provide accurate flow speed measurements for gases regardless of its gas compositions. In addition, the present invention further discloses the package design and driving circuitry which is utilized by the correlated working principle.
    • 一种包括微加工(也称为MEMS,微机电系统)硅流量传感器,流动通道封装和驱动电路的装置,其以热时间飞行(TOF)的工作原理工作以测量气体或液体流量 速度,在本发明中公开。 用于制造这种MEMS飞行时间硅热流量传感器的微加工技术可以通过批量生产大大降低传感器制造成本。 与传统的制造方法相比,这种用于硅时间飞行热流传感器的微加工工艺具有小特征尺寸,低功耗和高精度的优点。 原理上,热时间飞行技术可以为气体提供准确的流速测量,无论其气体成分如何。 此外,本发明还公开了通过相关工作原理利用的封装设计和驱动电路。
    • 20. 发明授权
    • Method of manufacturing a flow rate sensor
    • 制造流量传感器的方法
    • US07765679B2
    • 2010-08-03
    • US11523436
    • 2006-09-19
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • H05B3/00
    • G01F1/6845Y10T29/49082Y10T29/49083Y10T29/49117Y10T29/49124Y10T29/49155
    • A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.
    • 通过在取向<100>的N或轻掺杂P型硅衬底上进行微加工工艺的方法制造质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。