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11. 发明申请

US20060115590A1 Method and system for performing in-situ cleaning of a deposition system 审中-公开
标题翻译：用于进行沉积系统的原位清洗的方法和系统
公开(公告)号：US20060115590A1
公开(公告)日：2006-06-01
申请号：US10998394
申请日：2004-11-29
申请人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4405 , C23C16/4481 , C23C16/4485
摘要： A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.
摘要翻译：通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积诸如钌的金属层的方法包括在沉积系统中引入金属羰基前体，并在基底上沉积金属羰基金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在沉积系统中，金属羰基在固体前驱体蒸发系统中蒸发，并且前体蒸气通过蒸气输送系统输送到处理室。此外，原位清洁系统耦合到蒸气输送系统，以便对沉积系统进行定期清洁。定期原位清洗允许通过在较高温度下操作沉积系统来实现更高的沉积速率，其中前体蒸气可以分解并潜在地沉积在沉积系统的表面上。

12. 发明申请

US20050079708A1 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US20050079708A1
公开(公告)日：2005-04-14
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

13. 发明申请

US20060110530A1 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US20060110530A1
公开(公告)日：2006-05-25
申请号：US10996145
申请日：2004-11-23
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

14. 发明申请

US20050070100A1 Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
标题翻译：金属 - 羰基前驱体金属层的低压沉积
公开(公告)号：US20050070100A1
公开(公告)日：2005-03-31
申请号：US10673908
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , C23C16/44 , H01L21/285 , H01L21/44
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

15. 发明申请

US20050227441A1 Method of forming a tantalum-containing gate electrode structure 失效
标题翻译：形成含钽栅电极结构的方法
公开(公告)号：US20050227441A1
公开(公告)日：2005-10-13
申请号：US10830804
申请日：2004-03-31
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert Leusink , Fenton McFeely , John Yurkas , Vijay Narayanan
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert Leusink , Fenton McFeely , John Yurkas , Vijay Narayanan
IPC分类号： H01L21/28 , H01L29/49 , H01L29/51 , H01L21/336 , C30B1/00 , H01L21/20 , H01L21/3205 , H01L21/36 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/28088 , H01L21/28194 , H01L29/4966 , H01L29/51 , H01L29/517
摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.
摘要翻译：一种用于形成含钽栅电极结构的方法，其通过在处理室中提供其上具有高k电介质层的衬底，并在热化学气相沉积工艺中通过暴露在高k电介质层上形成含钽层将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体，（CH 3）2））前体气体。在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

16. 发明申请

US20050104142A1 CVD tantalum compounds for FET get electrodes 审中-公开
标题翻译：用于FET的CVD钽化合物获得电极
公开(公告)号：US20050104142A1
公开(公告)日：2005-05-19
申请号：US10712575
申请日：2003-11-13
申请人： Vijav Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
发明人： Vijav Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
IPC分类号： C23C16/34 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/10 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/76
CPC分类号： C23C16/34 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/78
摘要： Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.
摘要翻译：公开了Ta和N的化合物，潜在地包括其它元素，并且电阻率低于约20mOmegacm，并且N与Ta的元素比大于约0.9，用作场效应器件中的栅极材料。这种化合物的典型实施方案TaSiN在典型的CMOS处理温度下在含有介电层和高k电介质层的SiO 2 2上是稳定的，功函数接近n型Si的功函数。金属Ta-N化合物通过化学气相沉积方法使用烷基亚氨基三（二烷基酰氨基）Ta种，例如叔戊酰亚胺基三（二甲基酰氨基）Ta（TAIMATA））作为Ta前体沉积。沉积是共形的，允许将Ta-N金属化合物柔性引入CMOS加工流程。用TaN或TaSiN处理的器件显示出接近理想的特性。

17. 发明申请

US20050250318A1 CVD tantalum compounds for FET gate electrodes 审中-公开
标题翻译：用于FET栅电极的CVD钽化合物
公开(公告)号：US20050250318A1
公开(公告)日：2005-11-10
申请号：US11180384
申请日：2005-07-13
申请人： Vijay Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
发明人： Vijay Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
IPC分类号： C23C16/34 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/10 , H01L29/49 , H01L29/772 , H01L29/78 , H01L21/3205 , H01L21/31 , H01L21/44 , H01L21/469 , H01L21/4763
CPC分类号： C23C16/34 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/78
摘要： Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.
摘要翻译：公开了Ta和N的化合物，潜在地包括其它元素，并且电阻率低于约20mOmegacm，并且N与Ta的元素比大于约0.9，用作场效应器件中的栅极材料。这种化合物的典型实施方案TaSiN在典型的CMOS处理温度下在含有介电层和高k电介质层的SiO 2 2上是稳定的，功函数接近n型Si的功函数。金属Ta-N化合物通过化学气相沉积方法使用烷基亚氨基三（二烷基酰氨基）Ta种，例如叔戊酰亚胺基三（二甲基酰氨基）Ta（TAIMATA））作为Ta前体沉积。沉积是共形的，允许将Ta-N金属化合物柔性引入CMOS加工流程。用TaN或TaSiN处理的器件显示出接近理想的特性。

18. 发明申请

US20060182886A1 Method and system for improved delivery of a precursor vapor to a processing zone 审中-公开
标题翻译：用于改进将前体蒸气输送到处理区的方法和系统
公开(公告)号：US20060182886A1
公开(公告)日：2006-08-17
申请号：US11058676
申请日：2005-02-15
申请人： Emmanuel Guidotti , Kenji Suzuki , Gerrit Leusink , Fenton McFeely
发明人： Emmanuel Guidotti , Kenji Suzuki , Gerrit Leusink , Fenton McFeely
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： C23C16/4481 , C23C16/16 , C23C16/4404 , C23C16/4405 , C23C16/45565
摘要： A method and system for improved delivery of a solid precursor. A chemically inert coating is provided on system components in a precursor delivery line to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line, thereby allowing increased delivery of the precursor vapor to a processing zone for depositing a layer on a substrate. The solid precursor can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating can, for example, be a CxFy-containing polymer, such as polytetrafluoroethylene or ethylene-chlorotrifluoroethylene. Other benefits of using an inert coating include easy periodic cleaning of deposits from the precursor delivery line.
摘要翻译：一种用于改进固体前体递送的方法和系统。在前体输送管线中的系统组分上提供化学惰性的涂层，以减少前体输送管线中相对不稳定的前体蒸汽的分解，从而允许增加前体蒸气的输送到用于在基底上沉积层的处理区域。固体前体可以是例如羰基钌或羰基铼。惰性涂层可以是例如聚四氟乙烯或乙烯 - 三氟氯乙烯的聚合物。使用惰性涂层的其他优点包括容易地从前体输送管线定期清洁沉积物。

19. 发明申请

US20060163630A1 TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks 失效
标题翻译： TiC作为高k SiO 2栅极堆叠上的热稳定的p金属碳化物
公开(公告)号：US20060163630A1
公开(公告)日：2006-07-27
申请号：US11034597
申请日：2005-01-13
申请人： Alessandro Callegari , Michael Gribelyuk , Dianne Lacey , Fenton McFeely , Katherine Saenger , Sufi Zafar
发明人： Alessandro Callegari , Michael Gribelyuk , Dianne Lacey , Fenton McFeely , Katherine Saenger , Sufi Zafar
IPC分类号： H01L29/94 , H01L29/76 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/4966 , C23C14/0036 , C23C14/0635 , H01L21/28088 , H01L29/513 , H01L29/517 , H01L29/665
摘要： A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.
摘要翻译：提供了包含TiC的复合金属，其是在包括高k电介质和界面层的栅极堆叠上具有约4.75至约5.3，优选约5e的功函数的功函数的热电稳定的p型金属，以及制造TiC复合金属的方法。此外，本发明的TiC金属化合物在1000℃下是非常有效的氧扩散阻挡层，允许在p金属氧化物半导体（pMOS）器件中非常有侵蚀性的等效氧化物厚度（EOT）和反型层厚度缩小至低于Å 。

20. 发明申请

US20060151846A1 Method of forming HfSiN metal for n-FET applications 审中-公开
公开(公告)号：US20060151846A1
公开(公告)日：2006-07-13
申请号：US11035369
申请日：2005-01-13
申请人： Alessandro Callegari , Martin Frank , Rajarao Jammy , Dianne Lacey , Fenton McFeely , Sufi Zafar
发明人： Alessandro Callegari , Martin Frank , Rajarao Jammy , Dianne Lacey , Fenton McFeely , Sufi Zafar
IPC分类号： H01L29/94
CPC分类号： H01L29/4966 , H01L21/28088 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/6659
摘要： A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000° C.), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.

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