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11. 发明授权

US07541297B2 Method and system for improving dielectric film quality for void free gap fill 有权
标题翻译：改善空隙填隙电介质膜质量的方法和系统
公开(公告)号：US07541297B2
公开(公告)日：2009-06-02
申请号：US11876541
申请日：2007-10-22
申请人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
发明人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/24 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76837
摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.
摘要翻译：在基板上形成氧化硅层的方法。该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

12. 发明申请

US20110275200A1 METHODS OF DYNAMICALLY CONTROLLING FILM MICROSTRUCTURE FORMED IN A MICROCRYSTALLINE LAYER 审中-公开
标题翻译：在微晶层中形成薄膜微结构的动态控制方法
公开(公告)号：US20110275200A1
公开(公告)日：2011-11-10
申请号：US13098072
申请日：2011-04-29
申请人： Yi Zheng , Guangchi Xuan , Zheng Yuan , Brian Shieh
发明人： Yi Zheng , Guangchi Xuan , Zheng Yuan , Brian Shieh
IPC分类号： H01L21/205
CPC分类号： C23C16/24 , C23C16/0272 , C23C16/505 , C23C16/52 , C30B25/105 , C30B29/06 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method for an intrinsic type microcrystalline silicon layer is provided. In one embodiment, a method for forming an intrinsic type microcrystalline silicon layer includes dynamically ramping up a silane gas supplied in a gas mixture to a surface of a substrate disposed in a processing chamber, dynamically ramping down a RF power applied in the gas mixture supplied to the processing chamber to form a plasma in the gas mixture, and forming an intrinsic type microcrystalline silicon layer on the substrate.
摘要翻译：提供本征型微晶硅层的方法。在一个实施方案中，用于形成本征型微晶硅层的方法包括将在气体混合物中供应的硅烷气体动态地升高到设置在处理室中的基板的表面，动态地降低施加在所提供的气体混合物中的RF功率到处理室中以在气体混合物中形成等离子体，并在衬底上形成本征型微晶硅层。

13. 发明申请

US20090104789A1 METHOD AND SYSTEM FOR IMPROVING DIELECTRIC FILM QUALITY FOR VOID FREE GAP FILL 有权
标题翻译：用于改善无电隙隙填料的电介质膜质量的方法和系统
公开(公告)号：US20090104789A1
公开(公告)日：2009-04-23
申请号：US11876541
申请日：2007-10-22
申请人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
发明人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/24 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76837
摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.
摘要翻译：在基板上形成氧化硅层的方法。该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

14. 发明申请

US20080311753A1 OXYGEN SACVD TO FORM SACRIFICAL OXIDE LINERS IN SUBSTRATE GAPS 审中-公开
标题翻译：氧气SACVD在基板GA中形成氧化物衬里
公开(公告)号：US20080311753A1
公开(公告)日：2008-12-18
申请号：US12136931
申请日：2008-06-11
申请人： Yi Zheng , Sasha J. Kweskin , Kedar Sapre , Nitin K. Ingle , Zheng Yuan
发明人： Yi Zheng , Sasha J. Kweskin , Kedar Sapre , Nitin K. Ingle , Zheng Yuan
IPC分类号： H01L21/311
CPC分类号： H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/28132 , H01L21/3086 , H01L21/3088 , H01L21/3146 , H01L21/31604
摘要： A method of forming and removing a sacrificial oxide layer is described. The method includes forming a step on a substrate, where the step has a top and sidewalls. The method may also include forming the sacrificial oxide layer around the step by chemical vapor deposition of molecular oxygen and TEOS, where the oxide layer is formed on the top and sidewalls of the step. The method may also include removing a top portion of the oxide layer and the step; removing a portion of the substrate exposed by the removal of the step to form a etched substrate; and removing the entire sacrificial oxide layer from the etched substrate.
摘要翻译：描述了形成和去除牺牲氧化物层的方法。该方法包括在衬底上形成台阶，其中台阶具有顶部和侧壁。该方法还可以包括通过分子氧和TEOS的化学气相沉积在步骤周围形成牺牲氧化物层，其中氧化物层形成在台阶的顶部和侧壁上。该方法还可以包括去除氧化物层的顶部和步骤; 通过去除步骤去除暴露的基板的一部分以形成蚀刻的基板; 并从蚀刻的衬底去除整个牺牲氧化物层。

15. 发明申请

US20190031567A1 Beta-SiAlON Wavelength Converters and Methods of Making the Same 审中-公开
公开(公告)号：US20190031567A1
公开(公告)日：2019-01-31
申请号：US15661183
申请日：2017-07-27
申请人： Zhengbo Yu , Madis Raukas , Yi Zheng
发明人： Zhengbo Yu , Madis Raukas , Yi Zheng
IPC分类号： C04B35/597 , F21V9/16
摘要： Methods for producing wavelength converters are described. The methods include sintering a mixture consisting essentially of first particles and second particles to form a sintered article. In embodiments the first particles consist essentially of particles of β-SiAlON or precursors thereof, and the second particles consist essentially one or more sintering aids or precursors thereof. In embodiments the sintered article has a density that is greater than or equal to about 90% of a theoretical bulk density of the mixture, and is configured to convert primary light incident thereon to secondary light, wherein the secondary light exhibits a peak with a full width half maximum of greater than 0 to about 60 nanometers (nm) within a wavelength range of about 495 nm to about 600 nm.

16. 发明授权

US09082523B2 Transparent conductor 有权
标题翻译：透明导体
公开(公告)号：US09082523B2
公开(公告)日：2015-07-14
申请号：US13882451
申请日：2011-11-10
申请人： Barbaros Özyilmaz , Guang Xin Ni , Yi Zheng
发明人： Barbaros Özyilmaz , Guang Xin Ni , Yi Zheng
IPC分类号： B32B9/00 , H01B1/04 , C01B31/04 , H01L51/44 , H01B13/00 , H01L51/52
CPC分类号： H01B1/04 , C01B32/182 , C01B2204/00 , H01B13/0033 , H01L51/442 , H01L51/5206 , H01L51/5215 , Y02E10/549 , Y10T428/2911 , Y10T428/30
摘要： A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.
摘要翻译：一种透明导体，包括：石墨烯层和石墨烯层上的永久偶极子层，被配置为静电掺杂石墨烯层。

17. 发明授权

US08786146B2 Electric machine and oil cooling method for electrical machine 有权
标题翻译：电机电机油冷却方式
公开(公告)号：US08786146B2
公开(公告)日：2014-07-22
申请号：US13513019
申请日：2010-01-26
申请人： Wei Cai , Yi Zheng , Xinglian Yuan
发明人： Wei Cai , Yi Zheng , Xinglian Yuan
IPC分类号： H02K9/20
CPC分类号： H02K9/19 , H02K9/197
摘要： An electrical machine including a casing (1), an oil inlet hole (7), an oil passage (2), oil outlet holes (3), a stator retainer (8), a casing end cover (10), a stator iron core (5), winding coils (6), slot insulations (12) and oil-guides (4). The oil passage (2) is located inside the casing (1) and links with the oil inlet hole (7) of the casing (1) and the oil outlet holes (3) of the stator retainer (8). The oil outlet holes (3) are located above the winding coils (6) and the oil-guides (4) are located between the oil outlet holes (3) and the winding coils (6). Oil entering from the oil inlet hole (7) pours onto the winding coils (6) by the guidance of the oil-guides (4) after flowing through the oil passage (2) and flowing out of the oil outlet holes (3). The winding coils of the electrical machine can be effectively cooled and the electrical machine can achieve higher thermal durability. An oil cooling method for the electrical machine is also provided.
摘要翻译：一种电机，包括壳体（1），进油孔（7），油路（2），出油孔（3），定子保持架（8），壳体端盖（10），定子铁（5），绕组线圈（6），槽绝缘（12）和导油器（4）。油路（2）位于壳体（1）的内部，与壳体（1）的进油孔（7）和定子保持架（8）的排油孔（3）连结。出油孔（3）位于绕组线圈（6）的上方，导油件（4）位于排油孔（3）和绕组线圈（6）之间。从进油孔（7）进入的油在流经油路（2）并从出油孔（3）流出之后，通过导油件（4）的引导而在卷绕线圈（6）上倾倒。可以有效地冷却电机的绕组线圈，并且电机可以实现更高的耐热性。还提供了一种用于电机的油冷却方法。

18. 发明授权

US08547660B2 Magnetic write head manufactured by an enhanced damascene process producing a tapered write pole with a non-magnetic spacer and non-magnetic bump 有权
标题翻译：通过增强的镶嵌工艺制造的磁性写头，其产生具有非磁性间隔物和非磁性凸块的锥形写柱
公开(公告)号：US08547660B2
公开(公告)日：2013-10-01
申请号：US12641251
申请日：2009-12-17
申请人： Donald G. Allen , Amanda Baer , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H. P. Lee , Fenglin Liu , Aron Pentek , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
发明人： Donald G. Allen , Amanda Baer , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H. P. Lee , Fenglin Liu , Aron Pentek , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/3143 , G11B5/3146 , G11B5/315 , Y10T428/11 , Y10T428/1171
摘要： A magnetic write head having a tapered trailing edge and having a magnetic layer formed over a trailing edge of the write pole at a location recessed from the ABS, the magnetic layer being separated from the trailing edge of the write pole by a thin non-magnetic layer. The thin non-magnetic layer is preferably sufficiently thin that the magnetic layer can function as a portion of the write pole in a region removed from the ABS. A trailing magnetic shield is formed over the write pole and is separated from the write pole by a non-magnetic trailing gap layer. A non-magnetic spacer layer can be formed over the magnetic layer to provide additional separation between the magnetic layer and the trailing magnetic shield.
摘要翻译：一种具有锥形后缘并具有磁性层的磁性写头，该磁性层形成在从ABS的凹陷处的写入极的后缘上，该磁性层通过薄的非磁性的方式与写入极的后缘分离层。薄的非磁性层优选地足够薄，使得磁性层可以在从ABS去除的区域中用作写入极的一部分。尾磁屏蔽形成在写极上，并且通过非磁性拖尾间隙层与写极分离。可以在磁性层之上形成非磁性间隔层，以在磁性层和尾部磁屏蔽之间提供额外的间隔。

19. 发明申请

US20130104388A1 NOVEL HIGH BEVEL ANGLE MAGNETIC WRITER POLE FABRICATION PROCESS 有权
标题翻译：新型高水平角度磁性写入器制造工艺
公开(公告)号：US20130104388A1
公开(公告)日：2013-05-02
申请号：US13285688
申请日：2011-10-31
申请人： Guomin Mao , Yi Zheng
发明人： Guomin Mao , Yi Zheng
IPC分类号： G11B5/84
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： Methods of making write poles for perpendicular magnetic recording write heads. The bevel angle of the write pole for a perpendicular magnetic recording write head affects the performance of the write head. By forming reinforcement layer on the polymeric underlayer mask to enhance the mask durability during ion mill and tapering the polymeric underlayer above the non-magnetic mill mask layer using oxygen and nitrogen based reactive ion etch process, the bevel angle of the magnetic write pole can be increased greatly to meet the demands of the next and future generations of magnetic recording write heads.
摘要翻译：制作垂直磁记录写磁头写磁极的方法。用于垂直磁记录写头的写入极的斜角影响写入头的性能。通过在聚合物底层掩模上形成增强层，以增强离子研磨过程中的掩模耐久性，并使用基于氧和氮的反应离子蚀刻工艺使非磁性研磨掩模层上方的聚合物底层逐渐变细，磁性写入极的斜角可以为大大增加，以满足下一代和下一代磁记录头的要求。

20. 发明申请

US20130081263A1 METHOD FOR MANUFACTURING A MAGNETIC WRITE POLE OF A PERPENDICULAR MAGNETIC WRITE HEAD USING NOVEL MASK FABRICATION 失效
标题翻译：使用新型掩模制造制造全磁性写磁头的磁性写入方法
公开(公告)号：US20130081263A1
公开(公告)日：2013-04-04
申请号：US13251082
申请日：2011-09-30
申请人： Guomin Mao , Sue Siyang Zhang , Yi Zheng
发明人： Guomin Mao , Sue Siyang Zhang , Yi Zheng
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetic write pole of a magnetic write head for perpendicular magnetic recording. A magnetic write pole material is deposited, followed by union milling hard mask, a polymer mask under-layer followed by a dielectric hard mask material, followed by a photoresist. The photoresist is patterned to define a write pole shape and the shape of the patterned photoresist is transferred onto the underlying dielectric hard mask by a novel reactive ion etching that is performed in a chemistry that includes one or more fluorine containing gases and He. The presence of He in the reactive ion etching tool helps to improve the profile of the patterned dielectric hard mask. In addition, RIE parameters such a gas ratio (e.g. CF4 to CHF3 gas ratio) and power ratio (e.g. source power to bias power) are adjusted to optimize the profile of the patterned dielectric mask.
摘要翻译：一种用于制造用于垂直磁记录的磁写头的磁写磁极的方法。沉积磁性写入极材料，随后是联合铣削硬掩模，聚合物掩模底层，随后是电介质硬掩模材料，随后是光致抗蚀剂。光致抗蚀剂被图案化以限定写磁极形状，并且通过在包括一种或多种含氟气体和He的化学中进行的新型反应离子蚀刻将图案化光致抗蚀剂的形状转印到下面的电介质硬掩模上。反应离子蚀刻工具中He的存在有助于改善图案化电介质硬掩模的轮廓。此外，调整诸如气体比（例如CF4至CHF3气体比）和功率比（例如源功率与偏置功率）的RIE参数以优化图案化电介质掩模的轮廓。

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