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11. 发明授权

US5851733A Photolithographic pattern generation 失效
标题翻译：光刻图案生成
公开(公告)号：US5851733A
公开(公告)日：1998-12-22
申请号：US793310
申请日：1997-03-12
申请人： Recai Sezi , Rainer Leuschner , Erwin Schmidt
发明人： Recai Sezi , Rainer Leuschner , Erwin Schmidt
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , G03F7/033 , G03F7/039 , G03F7/26 , G03F7/38 , H01L21/027 , B03C5/00
CPC分类号： G03F7/265 , G03F7/0226 , G03F7/0233 , Y10S430/12
摘要： In a method for producing photolithographic patterns in the submicron range, applied on a substrate is a photoresist layer comprised of a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component--in the form of an ester of a naphthoquinonediazide-4-sulfonic acid with an aromatic or aliphatic-aromatic hydroxy compound--and a suitable solvent; the photoresist layer is then dried, exposed in an imaging manner, and subjected to a temperature treatment in the range of between 120.degree. and 150.degree. C. for a duration of 100 to 600 seconds. The photoresist layer is then subjected to a liquid silylation and is dry-developed in an anisotropic oxygen plasma.
摘要翻译： PCT No.PCT / DE95 / 01184 Sec。 371日期1997年3月12日 102（e）1997年3月12日PCT PCT 1995年9月1日PCT公布。出版物WO96 / 08750 日期1996年3月21日在用于制造亚微米范围内的光刻图案的方法中，施加在基底上的是由包含羧酸酐基团和叔碳酸酯的聚合物组成的光致抗蚀剂层。丁酯或叔丁酯。萘醌二叠氮-4-磺酸与芳族或脂族 - 芳族羟基化合物的酯形式的光活性组分和合适的溶剂; 然后将光致抗蚀剂层干燥，以成像方式曝光，并在120至150℃的温度范围内进行100至600秒的持续时间。然后将光致抗蚀剂层进行液体甲硅烷基化，并在各向异性氧等离子体中干燥显影。

12. 发明授权

US5360693A Positive o-quinone diazide photoresist containing base copolymer utilizing monomer having anhydride function and further monomer that increases etch resistance 失效
标题翻译：含邻苯醌二叠氮化物光致抗蚀剂含有具有酸酐官能团的单体的基础共聚物和增加耐蚀性的其它单体
公开(公告)号：US5360693A
公开(公告)日：1994-11-01
申请号：US59518
申请日：1993-05-10
申请人： Michael Sebald , Recai Sezi , Rainer Leuschner , Seigfried Birkle , Hellmut Ahhe
发明人： Michael Sebald , Recai Sezi , Rainer Leuschner , Seigfried Birkle , Hellmut Ahhe
IPC分类号： G03F7/023 , G03F7/075 , G03F15/06
CPC分类号： G03F7/0233 , G03F7/0758
摘要： An aqueous-alkaline developable photoresist suitable for a lithography in deep ultraviolet light and having a structural resolution in the sub-.mu.m range. The photoresist contains a developable base polymer that comprises anhydride functions that act as solubility-mediating groups and also contains a photo-active component. In addition to being constructed of monomers carrying anhydride groups, the base polymer can be constructed of further monomers that produce designationally defined properties in the photoresist, for example, exhibit resistance to plasma etching processes. The photoresist of the present invention is therefore very versatile.
摘要翻译：一种含水碱性可显影光致抗蚀剂，适用于深紫外光下的平版印刷，其结构分辨率在多个范围之内。光致抗蚀剂包含可显影的基础聚合物，其包含作为溶解介导基团并且还含有光活性组分的酸酐官能团。除了由负载酸酐基团的单体构成之外，基础聚合物可以由在光致抗蚀剂中产生指定性质的其它单体构成，例如显示出对等离子体蚀刻工艺的抗性。因此，本发明的光刻胶是非常通用的。

13. 发明授权

US5234794A Photostructuring method 失效
标题翻译：光结构方法
公开(公告)号：US5234794A
公开(公告)日：1993-08-10
申请号：US847881
申请日：1992-03-10
申请人： Michael Sebald , Rainer Leuschner , Recai Sezi , Siegfried Birkle , Hellmut Ahne
发明人： Michael Sebald , Rainer Leuschner , Recai Sezi , Siegfried Birkle , Hellmut Ahne
IPC分类号： G03F7/40
CPC分类号： G03F7/405 , G03F7/40
摘要： A simple method for diminishing the trench width in a photoresist structure to below the resolution limit is provided. A photoresist structure is produced and treated with an agent then contains a bulging constituent that reacts with functional groups of the photoresist structure. The bulging constituent causes a volume increase of the photoresist structure. The extent of the volume increase of the photoresist structures is controllable by varying various parameters.
摘要翻译：提供了一种用于将光致抗蚀剂结构中的沟槽宽度减小到分辨率极限以下的简单方法。制备光致抗蚀剂结构并用试剂处理，然后含有与光致抗蚀剂结构的官能团反应的凸起成分。凸起成分导致光致抗蚀剂结构的体积增加。通过改变各种参数可以控制光致抗蚀剂结构体积增加的程度。

14. 发明授权

US08822329B2 Method for making conductive interconnects 有权
标题翻译：制造导电互连的方法
公开(公告)号：US08822329B2
公开(公告)日：2014-09-02
申请号：US12567950
申请日：2009-09-28
申请人： Rainer Leuschner , Gunther Mackh , Uwe Seidel
发明人： Rainer Leuschner , Gunther Mackh , Uwe Seidel
IPC分类号： H01L23/535 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76898 , H01L21/76807 , H01L21/7681 , H01L21/76816 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76847 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming a second conductive interconnect over the substrate, wherein the first conductive interconnect and the second conductive interconnect are formed at least partially simultaneously.
摘要翻译：一个或多个实施例涉及一种用于制造半导体结构的方法，所述方法包括：至少部分地通过所述衬底形成第一导电互连; 以及在所述衬底上形成第二导电互连，其中所述第一导电互连和所述第二导电互连至少部分地同时形成。

15. 发明申请

US20120208319A1 Packaged Semiconductor Device with Encapsulant Embedding Semiconductor Chip that Includes Contact Pads 有权
标题翻译：封装半导体器件，封装包含接触垫的半导体芯片
公开(公告)号：US20120208319A1
公开(公告)日：2012-08-16
申请号：US13453787
申请日：2012-04-23
申请人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
发明人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
IPC分类号： H01L21/77 , B23K31/02 , H01L21/78
CPC分类号： H01L21/568 , H01L23/49811 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/96 , H01L24/97 , H01L25/105 , H01L25/16 , H01L2224/12105 , H01L2224/211 , H01L2224/221 , H01L2224/32225 , H01L2224/73267 , H01L2224/97 , H01L2225/1035 , H01L2225/1052 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/3511 , H01L2224/19 , H01L2924/00 , H01L2224/83 , H01L2224/82
摘要： A method of manufacturing a semiconductor package includes embedding a semiconductor chip in an encapsulant. First contact pads are formed on a first main face of the semiconductor package and second contact pads are formed on a second main face of the semiconductor package opposite the first main face. A diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, where x is a pitch of the second contact pads in micrometers.
摘要翻译：制造半导体封装的方法包括将半导体芯片嵌入密封剂中。第一接触焊盘形成在半导体封装的第一主面上，并且第二接触焊盘形成在与第一主面相对的半导体封装的第二主面上。第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

16. 发明授权

US08183696B2 Packaged semiconductor device with encapsulant embedding semiconductor chip that includes contact pads 有权
标题翻译：封装的半导体器件，包括密封剂嵌入半导体芯片，包括接触焊盘
公开(公告)号：US08183696B2
公开(公告)日：2012-05-22
申请号：US12750946
申请日：2010-03-31
申请人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
发明人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
IPC分类号： H01L23/48 , H01L21/78 , H01L23/488 , H01L21/98
CPC分类号： H01L21/568 , H01L23/49811 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/96 , H01L24/97 , H01L25/105 , H01L25/16 , H01L2224/12105 , H01L2224/211 , H01L2224/221 , H01L2224/32225 , H01L2224/73267 , H01L2224/97 , H01L2225/1035 , H01L2225/1052 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/3511 , H01L2224/19 , H01L2924/00 , H01L2224/83 , H01L2224/82
摘要： A semiconductor package includes a semiconductor chip, an encapsulant embedding the semiconductor chip, first contact pads on a first main face of the semiconductor package and second contact pads on a second main face of the semiconductor package opposite to the first main face. The diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, wherein x is the pitch of the second contact pads in micrometers.
摘要翻译：半导体封装包括半导体芯片，将半导体芯片嵌入的密封剂，在半导体封装的第一主面上的第一接触焊盘和与第一主面相对的半导体封装的第二主面上的第二接触焊盘。第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

17. 发明申请

US20110241218A1 Electronic Device and Manufacturing Method 有权
标题翻译：电子设备及制造方法
公开(公告)号：US20110241218A1
公开(公告)日：2011-10-06
申请号：US12750946
申请日：2010-03-31
申请人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
发明人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
IPC分类号： H01L23/48 , H01L23/488 , H01L21/78 , H01L21/98
CPC分类号： H01L21/568 , H01L23/49811 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/96 , H01L24/97 , H01L25/105 , H01L25/16 , H01L2224/12105 , H01L2224/211 , H01L2224/221 , H01L2224/32225 , H01L2224/73267 , H01L2224/97 , H01L2225/1035 , H01L2225/1052 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/3511 , H01L2224/19 , H01L2924/00 , H01L2224/83 , H01L2224/82
摘要： A semiconductor package includes a semiconductor chip, an encapsulant embedding the semiconductor chip, first contact pads on a first main face of the semiconductor package and second contact pads on a second main face of the semiconductor package opposite to the first main face. The diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, wherein x is the pitch of the second contact pads in micrometers.
摘要翻译：半导体封装包括半导体芯片，将半导体芯片嵌入的密封剂，在半导体封装的第一主面上的第一接触焊盘和与第一主面相对的半导体封装的第二主面上的第二接触焊盘。第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

18. 发明授权

US07697322B2 Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module 失效
标题翻译：集成电路; 集成电路制造方法; 降低磁场影响的方法; 内存模块
公开(公告)号：US07697322B2
公开(公告)日：2010-04-13
申请号：US11775599
申请日：2007-07-10
申请人： Rainer Leuschner , Ulrich Klostermann
发明人： Rainer Leuschner , Ulrich Klostermann
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction is provided. The magnetic tunnel junction may include a free layer with a magnetization orientation that is selected by the application of a write current through the magnetic tunnel junction, and a retention layer that retains the selectable magnetization orientation of the free layer at temperatures below a retention temperature.
摘要翻译：本发明的实施例一般涉及集成电路，集成电路的制造方法，减小磁场影响的方法以及存储器模块。在本发明的实施例中，提供了具有磁性隧道结的集成电路。磁性隧道结可以包括具有通过施加通过磁性隧道结的写入电流而选择的磁化取向的自由层，以及在低于保持温度的温度下保持自由层的可选磁化取向的保留层。

19. 发明授权

US07660151B2 Method for programming an integrated circuit, method for programming a plurality of cells, integrated circuit, cell arrangement 失效
标题翻译：用于编程集成电路的方法，用于编程多个单元的方法，集成电路，单元布置
公开(公告)号：US07660151B2
公开(公告)日：2010-02-09
申请号：US11856665
申请日：2007-09-17
申请人： Rainer Leuschner
发明人： Rainer Leuschner
IPC分类号： G11C11/00
CPC分类号： G11C5/02 , G11C11/1675
摘要： Embodiment of the invention provide a method for programming an integrated circuit, methods for programming a plurality of cells, an integrated circuit, and a cell arrangement. An embodiment of the invention provides a method for programming an integrated circuit having a plurality of cells. The method includes grouping the plurality of cells into a first group of cells and a second group of cells depending on the cell state the cells should be programmed with. The first group of cells and the second group of cells each having a plurality of cells. The method further includes concurrently programming the cells of the first group of cells with a first cell state. After having programmed the cells of the first group of cells, the cells of the second group of cells are concurrently programmed with a second cell state, which is different from the first cell state.
摘要翻译：本发明的实施例提供了一种用于编程集成电路的方法，用于编程多个单元的方法，集成电路和单元布置。本发明的实施例提供了一种用于编程具有多个单元的集成电路的方法。该方法包括根据细胞应该编程的细胞状态将多个细胞分组成第一组细胞和第二组细胞。第一组细胞和第二组细胞各自具有多个细胞。该方法还包括以第一单元状态同时编程第一组单元的单元。在编程了第一组单元的单元之后，第二组单元的单元同时被编程为与第一单元状态不同的第二单元状态。

20. 发明申请

US20090273966A1 Integrated Circuit, Memory Cell Array, Memory Module, and Method of Operating an Integrated Circuit 有权
标题翻译：集成电路，存储单元阵列，存储器模块和操作集成电路的方法
公开(公告)号：US20090273966A1
公开(公告)日：2009-11-05
申请号：US12114466
申请日：2008-05-02
申请人： Dietmar Gogl , Rainer Leuschner , Ulrich Klostermann
发明人： Dietmar Gogl , Rainer Leuschner , Ulrich Klostermann
IPC分类号： G11C11/02
CPC分类号： G11C11/1675 , G11C11/1659
摘要： According to one embodiment of the present invention, an integrated circuit includes a plurality of thermal selectable memory cells, each memory cell being connected to a conductive line, the conductive line having a first portion for applying a heating current, and a second portion for applying a programming current. The integrated circuit is configured such that the heating current and the programming current can be routed respectively to the first and the second portion of the conductive line independently from each other.
摘要翻译：根据本发明的一个实施例，集成电路包括多个热可选择存储单元，每个存储单元连接到导电线，该导线具有用于施加加热电流的第一部分和用于施加加热电流的第二部分编程电流。集成电路被配置为使得加热电流和编程电流可以彼此独立地分别路由到导线的第一和第二部分。

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