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11. 发明授权

US07265029B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US07265029B2
公开(公告)日：2007-09-04
申请号：US10883437
申请日：2004-07-01
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/185 , H01L21/7605 , H01L29/1608 , Y10S438/967
摘要： Methods for fabricating a semiconductor substrate. In an embodiment, the technique includes providing an intermediate support, providing a nucleation layer, and providing at least one bonding layer between the intermediate support and the nucleation layer to improve the bonding energy therebetween, and to form an intermediate assembly. The method also includes providing at least one layer of a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited semiconductor material to form a final support assembly comprising the target substrate, the deposited semiconductor material, and the intermediate assembly, and processing the final support assembly to remove the intermediate assembly. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on the target substrate.
摘要翻译：半导体衬底的制造方法。在一个实施方案中，该技术包括提供中间支撑体，提供成核层，并且在中间支撑体和成核层之间提供至少一个结合层，以改善它们之间的结合能力，并形成中间组件。该方法还包括在成核层上提供至少一层半导体材料，将目标衬底粘合到沉积的半导体材料上以形成包括目标衬底，沉积的半导体材料和中间组件的最终支撑组件，以及处理最后的支撑组件去除中间组件。结果是在目标衬底上包括至少一层半导体材料的半导体衬底。

12. 发明授权

US07145214B2 Substrate for stressed systems and method of making same 失效
公开(公告)号：US07145214B2
公开(公告)日：2006-12-05
申请号：US11287371
申请日：2005-11-28
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L29/00
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

13. 发明申请

US20060079070A1 Substrate for stressed systems and method of making same 失效
公开(公告)号：US20060079070A1
公开(公告)日：2006-04-13
申请号：US11287379
申请日：2005-11-28
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

14. 发明授权

US10002763B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
公开(公告)号：US10002763B2
公开(公告)日：2018-06-19
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00 , H01L21/18 , H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing a support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the semiconductor substrate.

15. 发明申请

US20120058621A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20120058621A1
公开(公告)日：2012-03-08
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

16. 发明授权

US08083115B2 Substrate cutting device and method 有权
标题翻译：基板切割装置及方法
公开(公告)号：US08083115B2
公开(公告)日：2011-12-27
申请号：US11622053
申请日：2007-01-11
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B26F3/00
CPC分类号： H01L21/76254 , B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , Y10T29/53274 , Y10T83/0267 , Y10T83/04 , Y10T83/364 , Y10T156/1059 , Y10T156/1184 , Y10T156/1189 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972 , Y10T225/10 , Y10T225/12 , Y10T225/30 , Y10T225/307 , Y10T225/35 , Y10T225/386
摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.
摘要翻译：描述了用于切割组件的自动切割装置。组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。切割装置还包括一个控制机构，用于在分离该层期间调节该组件的至少两个不同部分，以便于更精确的拆卸。

17. 发明授权

US07888235B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US07888235B2
公开(公告)日：2011-02-15
申请号：US11831484
申请日：2007-07-31
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/185 , H01L21/7605 , H01L29/1608 , Y10S438/967
摘要： A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
摘要翻译：一种制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上的步骤; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。结果是在支撑衬底上包括至少一层半导体材料的半导体衬底。

18. 发明申请

US20090289332A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20090289332A1
公开(公告)日：2009-11-26
申请号：US12536082
申请日：2009-08-05
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L29/02
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

19. 发明授权

US07404870B2 Methods for forming an assembly for transfer of a useful layer 有权
标题翻译：用于形成用于转移有用层的组件的方法
公开(公告)号：US07404870B2
公开(公告)日：2008-07-29
申请号：US11437654
申请日：2006-05-22
申请人： Fabrice Letertre , Olivier Rayssac
发明人： Fabrice Letertre , Olivier Rayssac
IPC分类号： B32B37/26 , B32B38/10
CPC分类号： H01L21/76254 , H01L21/76259 , Y10S156/922 , Y10S438/977 , Y10T156/1064 , Y10T156/108 , Y10T156/11 , Y10T156/1168 , Y10T156/1189 , Y10T156/1989 , Y10T156/1994
摘要： Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface in a first support to define a useful layer; and forming a peripheral recess on the first support below the interface so that the periphery of the interface is exposed to facilitate removal and transfer of the useful layer. An epitaxial layer can be formed on the useful layer after forming the recess, with the width and depth of the recess being sufficient to accommodate the volume of residual material resulting from formation of the epitaxial layer without covering the periphery of the interface. Alternatively, an epitaxial layer can be formed on the useful layer after forming the recess, wherein the peripheral recess is configured for receiving sufficient residual material from the epitaxial layer to prevent bonding between the residual material and the useful layer.
摘要翻译：描述了用于从载体转移有用层的方法。在一个实施例中，该方法包括：通过在第一支撑件中提供界面以便限定有用层，从而便于从支撑体传递有用层; 以及在所述界面下方的所述第一支撑件上形成周边凹部，使得所述界面的外围被暴露以便于所述有用层的移除和转移。在形成凹槽之后，可以在有用层上形成外延层，其中凹槽的宽度和深度足以适应由形成外延层而不覆盖界面的周边而产生的剩余材料的体积。或者，可以在形成凹部之后在有用层上形成外延层，其中周边凹槽被配置为从外延层接收足够的残余材料，以防止残留材料和有用层之间的结合。

20. 发明申请

US20070269960A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20070269960A1
公开(公告)日：2007-11-22
申请号：US11831484
申请日：2007-07-31
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/185 , H01L21/7605 , H01L29/1608 , Y10S438/967
摘要： A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
摘要翻译：一种制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上的步骤; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。结果是在支撑衬底上包括至少一层半导体材料的半导体衬底。

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