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11. 发明授权

US5925495A Photoresist laminate and method for patterning using the same 失效
标题翻译：光刻胶层压板和使用其的图案化方法
公开(公告)号：US5925495A
公开(公告)日：1999-07-20
申请号：US924260
申请日：1997-09-05
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03C1/492
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photoresist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition comprising an oxime sulfonate acid generating agent. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译：提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。因此，在包含（a）基底的光致抗蚀剂层压件上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 以及（c）由抗反酸涂层形成的抗氧化剂层，其特征在于包含肟磺酸生成剂的特定负性化学增感光致抗蚀剂组合物。图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

12. 发明授权

US06319815B1 Electric wiring forming method with use of embedding material 有权
标题翻译：使用嵌入材料的电线成型方法
公开(公告)号：US06319815B1
公开(公告)日：2001-11-20
申请号：US09419951
申请日：1999-10-18
申请人： Etsuko Iguchi , Masakazu Kobayashi , Yasumitsu Taira
发明人： Etsuko Iguchi , Masakazu Kobayashi , Yasumitsu Taira
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/76801
摘要： A method for forming a wiring structure on a semiconductor substrate, comprising the following steps: a step for forming a low dielectric constant dielectric film and an etching stopper, sequentially, on said semiconductor substrate; a step for forming a resist mask having a pattern for forming via-holes on the etching stopper film; a step for forming via-holes on the low dielectric constant dielectric film through said resist mask; a step for filling said via-holes with an embedding material and for heating the embedding material to harden; a step for maintaining the embedding material at a predetermined thickness on the bottoms of the via-holes by performing etching back on the embedding material being heated to be harden; a step for forming a resist mask having a pattern for forming trench holes on said etching stopper film; a step for forming the trench holes on said low dielectric film constant dielectric through said resist mask, while removing the embedding material remaining on the bottoms of said via-holes; and a step for embedding metal into said trench holes and said via-holes, wherein the embedding material mainly includes a thermo-bridge forming compound therein, thereby generating no bubbles even when said embedding material is being filled into gutters having a large aspect ratio thereof.
摘要翻译：一种在半导体衬底上形成布线结构的方法，包括以下步骤：在所述半导体衬底上依次形成低介电常数介电膜和蚀刻阻挡层的步骤; 用于形成具有用于在蚀刻停止膜上形成通孔的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低介电常数介电膜上形成通孔的步骤; 用嵌入材料填充所述通孔并加热所述嵌入材料以硬化的步骤; 通过对被加热的硬化的嵌入材料进行蚀刻，将通孔的底部的嵌入材料保持在预定厚度的步骤; 在所述蚀刻阻挡膜上形成具有用于形成沟槽的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低电介质膜恒定电介质上形成沟槽的步骤，同时去除残留在所述通孔的底部上的包埋材料; 以及将金属嵌入所述沟槽和所述通孔的步骤，其中所述嵌入材料主要包括其中的热电桥形成化合物，即使当所述嵌入材料被填充到具有大纵横比的沟槽中时也不产生气泡。

13. 发明授权

US6042988A Chemical-amplification-type negative resist composition 有权
标题翻译：化学放大型负光刻胶组合物
公开(公告)号：US6042988A
公开(公告)日：2000-03-28
申请号：US161778
申请日：1998-09-29
申请人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
发明人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
IPC分类号： G03F7/004 , G03F7/038 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical-amplification-type negative resist composition containing an alkali-soluble resin, a compound capable of generating an acid by irradiation and a crosslinking agent, and the resist composition of the present invention is characterized in that it further contains an organic carboxylic acid compound as an acidic compound and an organic amine compound as an alkaline compound. According to the content of such acidic and alkaline compounds, the negative resist composition achieves a negative resist pattern exhibiting improved definition and an excellent profile with a reduced dependency on the type of substrate as well as a minimized change in the sensitivety and film thickness with the passage of time and a satisfactory PEG margin, and therefore, the negative resist composition of the present invention can be used in the field of manufacturing electronic parts such as semiconductor devices and liquid-crystal display devices, where finer and more precise processing is increasingly required.
摘要翻译：本发明提供一种含有碱溶性树脂，能够通过照射产生酸的化合物和交联剂的化学扩增型负性抗蚀剂组合物，其特征在于，其还含有作为酸性化合物的有机羧酸化合物和作为碱性化合物的有机胺化合物。根据这种酸性和碱性化合物的含量，负性抗蚀剂组合物实现了抗蚀剂图案显示出改善的清晰度和优异的轮廓，对基材的类型的依赖性降低，并且使敏感度和膜厚度的最小化变化与时间的流逝和令人满意的PEG余量，因此，本发明的负性抗蚀剂组合物可以用于半导体器件和液晶显示器件等电子部件的制造领域，其中越来越需要更精细和更精确的加工。

14. 发明授权

US6087068A Undercoating composition for photolithographic resist 有权
标题翻译：光刻抗蚀剂底涂组合物
公开(公告)号：US6087068A
公开(公告)日：2000-07-11
申请号：US271899
申请日：1999-03-18
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
IPC分类号： G03F7/11 , C09K3/00 , G03F7/09 , H01L21/027
CPC分类号： G03F7/091
摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photo-resist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.
摘要翻译：提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，其目的是减少光抗蚀剂图案曝光中光在基板表面上的反射的不利影响在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，层间相对紫外光没有不希望的层之间的混合现象和开槽以及大的选择比。底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。

15. 发明授权

US5854357A Process for the production of polyhydroxstyrene 失效
标题翻译：多羟基苯乙烯生产工艺
公开(公告)号：US5854357A
公开(公告)日：1998-12-29
申请号：US20411
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039 , C08F8/00
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups.
摘要翻译：聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。

16. 发明授权

US5756255A Undercoating composition for photolithography 失效
标题翻译：用于光刻的底漆组合物
公开(公告)号：US5756255A
公开(公告)日：1998-05-26
申请号：US747567
申请日：1996-11-12
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/09 , G03F7/11 , G03F7/26 , H01L21/027 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/117 , Y10S430/124
摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.
摘要翻译：提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c）（甲基）丙烯酸酯的不溶性树脂。

17. 发明授权

US5700625A Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US5700625A
公开(公告)日：1997-12-23
申请号：US630621
申请日：1996-04-10
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/038
摘要： Disclosed is a novel chemical-sensitization type negative-working photoresist composition capable of exhibiting high sensitivity to actinic rays and giving a patterned resist layer with high resolution and excellently orthogonal cross sectional profile of the patterned resist layer without occurrence of microbridges. The composition comprises (a) a poly(hydroxystyrene)-based resin; (b) a compound capable of releasing an acid by the irradiation with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; and (c) a crosslinking agent such as a urea resin and melamine resin, each in a specified weight proportion, the poly(hydroxystyrene)-based resin as the component (a) having such a dispersion of the molecular weight distribution that the ratio of the weight-average molecular weight M.sub.w to the number-average molecular weight M.sub.n does not exceed 1.4 and being substantially free from low molecular weight fractions including unpolymerized monomer and oligomers having a molecular weight smaller than 1000.
摘要翻译：公开了一种新型化学增感型负性光致抗蚀剂组合物，其能够对光化射线表现出高灵敏度，并且提供了图案化抗蚀剂层的高分辨率和非常正交的截面轮廓的图案化抗蚀剂层，而不会发生微桥。组合物包含（a）聚（羟基苯乙烯）类树脂; （b）能够通过光化射线如三（2,3-二溴丙基）异氰脲酸酯的照射而释放酸的化合物; 和（c）以规定重量比例的交联剂如尿素树脂和三聚氰胺树脂，作为组分（a）的聚（羟基苯乙烯）基树脂具有这样的分子量分布：重均分子量Mw与数均分子量Mn不超过1.4，基本上不含低分子量级分，包括分子量小于1000的未聚合单体和低聚物。

18. 发明授权

US06544717B2 Undercoating composition for photolithographic resist 失效
标题翻译：光刻抗蚀剂底涂组合物
公开(公告)号：US06544717B2
公开(公告)日：2003-04-08
申请号：US09803907
申请日：2001-03-13
申请人： Takako Hirosaki , Etsuko Iguchi , Masakazu Kobayashi
发明人： Takako Hirosaki , Etsuko Iguchi , Masakazu Kobayashi
IPC分类号： G03C176
CPC分类号： G03F7/091 , Y10S430/128
摘要： Disclosed is a novel undercoating solution for the formation of an antireflection undercoating layer to intervene between the surface of a substrate and a photoresist layer to be patterned in the manufacturing process of semiconductor devices with an object to prevent adverse influences of the light reflecting at the substrate surface on the cross sectional profile of the patterned resist layer. The under-coating composition is a uniform solution which comprises: (A) a nitrogen-containing organic compound having, in a molecule, at least two amino groups substituted by at least one substituent group selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups such as an N,N-substituted benzoguanamine compound; (B) an organic acid or an inorganic acid of which the acid residue contains at least one atom of sulfur such as methane-sulfonic acid and dodecylbenzene sulfonic acid; (C) an organic solvent such as propyleneglycol monomethyl ether; and (D) a light-absorbing compound which is preferably 9-anthra-cene carboxylic acid or 9,10-anthracene dicarboxylic acid.
摘要翻译：公开了一种用于形成抗反射底涂层的新型底涂层溶液，以在半导体器件的制造过程中在衬底的表面和待图案化的光致抗蚀剂层之间进行介入，以防止在衬底处反射的光的不利影响在图案化抗蚀剂层的横截面轮廓上的表面。底涂层组合物是均匀溶液，其包含：（A）在分子中具有至少两个被至少一个选自羟烷基和烷氧基烷基的取代基取代的氨基的含氮有机化合物例如N，N-取代的苯并胍胺化合物;（B）酸残基含有至少一个硫原子的有机酸或无机酸，例如甲磺酸和十二烷基苯磺酸;（C）有机溶剂如丙二醇单甲醚; 和（D）优选9-蒽甲酸或9,10-蒽二羧酸的光吸收化合物。

19. 发明授权

US06284428B1 Undercoating composition for photolithographic resist 有权
标题翻译：光刻抗蚀剂底涂组合物
公开(公告)号：US06284428B1
公开(公告)日：2001-09-04
申请号：US09493098
申请日：2000-01-28
申请人： Takako Hirosaki , Etsuko Iguchi , Masakazu Kobayashi
发明人： Takako Hirosaki , Etsuko Iguchi , Masakazu Kobayashi
IPC分类号： G03F7004
CPC分类号： G03F7/091 , Y10S430/128
摘要： Disclosed is a novel undercoating solution for the formation of an antireflection undercoating layer to intervene between the surface of a substrate and a photoresist layer to be patterned in the manufacturing process of semiconductor devices with an object to prevent adverse influences of the light reflecting at the substrate surface on the cross sectional profile of the patterned resist layer. The undercoating composition is a uniform solution which comprises: (A) a nitrogen-containing organic compound having, in a molecule, at least two amino groups substituted by at least one substituent group selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups such as an N,N-substituted benzoguanamine compound; (B) an organic acid or an inorganic acid of which the acid residue contains at least one atom of sulfur such as methanesulfonic acid and dodecylbenzene sulfonic acid; and (C) an organic solvent such as propyleneglycol monomethyl ether. The undercoating solution further optionally contains a light-absorbing compound such as bis(4-hydroxyphenyl) sulfone and 9-hydroxymethyl anthracene.
摘要翻译：公开了一种用于形成抗反射底涂层的新型底涂层溶液，以在半导体器件的制造过程中在衬底的表面和待图案化的光致抗蚀剂层之间进行介入，以防止在衬底处反射的光的不利影响在图案化抗蚀剂层的横截面轮廓上的表面。底涂层组合物是均匀溶液，其包含：（A）在分子中具有至少两个被至少一个选自羟基烷基和烷氧基烷基的取代基取代的氨基的含氮有机化合物，例如 N，N-取代的苯并胍胺化合物;（B）酸残基含有至少一个硫原子的有机酸或无机酸，例如甲磺酸和十二烷基苯磺酸; 和（C）有机溶剂如丙二醇单甲基醚。底涂层溶液还任选地含有光吸收化合物如双（4-羟基苯基）砜和9-羟甲基蒽。

20. 发明授权

US6159652A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US6159652A
公开(公告)日：2000-12-12
申请号：US20408
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B）酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

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