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    • 11. 发明授权
    • Resist pattern formation method
    • 抗蚀图案形成方法
    • US06403288B1
    • 2002-06-11
    • US09520345
    • 2000-03-07
    • Yukio NishimuraToshiyuki KaiEiichi KobayashiTakeo Shioya
    • Yukio NishimuraToshiyuki KaiEiichi KobayashiTakeo Shioya
    • G03F7039
    • G03F7/30G03F7/0045Y10S430/115
    • A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 Å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 Å smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 Å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.
    • 从化学放大正射线敏感性树脂组合物形成抗蚀剂图案的方法。湿法显影后由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜的未曝光部分的膜厚比以前小100至400埃 湿发展。 或者,由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜在足以确保湿显影后抗蚀剂膜的未曝光部分的膜厚度比100至400小的温度和时间都被湿成型 在湿显影之前的抗蚀剂膜是由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜,通过湿显影而经历100〜400的未曝光部分的膜厚度的降低作为形成抗蚀剂图案的抗蚀剂膜是有用的 。
    • 16. 发明授权
    • Negative radiation-sensitive resin composition
    • 负辐射敏感树脂组合物
    • US06468714B2
    • 2002-10-22
    • US09741334
    • 2000-12-21
    • Toshiyuki KaiYong WangShirou KusumotoYoshihisa Ohta
    • Toshiyuki KaiYong WangShirou KusumotoYoshihisa Ohta
    • G03F7004
    • G03F7/0045G03F7/038Y10S430/115Y10S430/122
    • A negative radiation-sensitive resin composition including (A) an alkali-soluble resin containing a copolymer selected from the group consisting of a hydroxystyrene/styrene copolymer having hydroxystyrene units in a content of from 65 to 90 mol % and a hydroxystyrene/&agr;-methylstyrene copolymer having hydroxystyrene units in a content of from 65 to 90 mol %, (B) a radiation-sensitive acid-generating agent containing a hydroxyl group-containing onium salt compound, and (C) a cross-linking agent containing an N-(alkoxymethyl)glycoluril compound. The composition is suitable as a chemically amplified negative resist, to which alkaline developing solutions having usual concentration are applicable and which can form, in usual line-and-space patterns, resist patterns having a rectangular cross-sectional shape in a high resolution and also has superior sensitivity, developability and dimensional fidelity.
    • 一种负辐射敏感性树脂组合物,其包含(A)含有共聚物的碱溶性树脂,所述共聚物选自含有65〜90摩尔%的羟基苯乙烯单元的羟基苯乙烯/苯乙烯共聚物和羟基苯乙烯/α-甲基苯乙烯 共聚物,其含量为65〜90摩尔%的羟基苯乙烯单元,(B)含有含羟基的鎓盐化合物的放射线敏感性产酸剂,(C)含有N- 烷氧基甲基)甘脲化合物。 该组合物适合作为化学放大的负性抗蚀剂,通常的浓度的碱性显影液可以通过这种抗蚀剂成像,并且可以以通常的线间距图案形成具有高分辨率的矩形横截面形状的抗蚀剂图案 具有卓越的灵敏度,可显影性和尺寸保真度。