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11. 发明专利

JP2013201424A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2013201424A
公开(公告)日：2013-10-03
申请号：JP2013022391
申请日：2013-02-07
申请人： Toshiba Corp , 株式会社東芝
发明人： KODERA MASAKO , TOMITA HIROSHI , NISHIOKA TAKESHI
IPC分类号： H01L21/304 , B24B27/033 , B24C1/08 , B24C3/00 , H01L21/027
CPC分类号： H01L21/02057 , B24B37/042 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/092 , H01L21/0209 , H01L21/0274 , H01L21/67051
摘要： PROBLEM TO BE SOLVED: To enable removal of a flow or a foreign material on a principal surface of a substrate without damaging or contaminating a principal surface of the substrate on an opposite side to the one principal surface thereby to improve pattern processing accuracy in a lithography process.SOLUTION: A semiconductor device manufacturing method comprises: a process (S2) of performing a rear face treatment for removing a flaw or a foreign material on a rear face of a substrate 10 with holding a surface side of the substrate 10 in a non-contact manner; a process (S6) of performing pattern formation by lithography on the surface of the substrate 10 by holding the rear face of the substrate 10 on which the rear face processing is performed in contact with a stage.
摘要翻译：要解决的问题：为了能够在基板的主表面上除去流动或异物，而不损坏或污染与主要表面相对的基板的主表面，从而提高光刻中的图案处理精度方法：一种半导体器件制造方法，包括：在将基板10的表面侧保持为非基板的情况下，进行用于去除基板10的背面上的缺陷或异物的后表面处理的工序（S2）接触方式通过保持与阶段接触进行后面处理的基板10的背面，在基板10的表面上进行通过光刻的图案形成的工序（S6）。

12. 发明专利

JP2012009804A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012009804A
公开(公告)日：2012-01-12
申请号：JP2010243821
申请日：2010-10-29
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YUKITERU , MINAMI FUKUGAKU , EDA HAJIME , AMANO MINORU , IWAYAMA MASAYOSHI , YOSHIKAWA MASAHISA , SATO MOTOYUKI , SUGURO KYOICHI , KODERA MASAKO
IPC分类号： H01L27/105 , H01L21/28 , H01L21/304 , H01L21/3205 , H01L21/768 , H01L21/8246 , H01L23/522 , H01L29/82 , H01L43/08 , H01L43/12 , H01L45/00
CPC分类号： H01L21/02697 , H01L21/3212 , H01L21/7684 , H01L21/76877 , H01L21/76883 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To simultaneously achieve high integration of a semiconductor integrated circuit and high performance of a function element.SOLUTION: A semiconductor device comprises: switch elements 3 and 4 disposed on a surface region of a semiconductor substrate 1; a contact plug 6 in which the bottom surface is connected to the switch elements 3 and 4; and a function element 7 disposed directly on the top surface of the contact plug 6. The maximum surface roughness of the top surface of the contact plug 6 is 0.2 nm or less.
摘要翻译：要解决的问题：同时实现半导体集成电路的高集成度和功能元件的高性能。解决方案：半导体器件包括：设置在半导体衬底1的表面区域上的开关元件3和4; 接触插头6，其中底表面连接到开关元件3和4; 以及直接设置在接触插塞6的上表面上的功能元件7.接触插头6的上表面的最大表面粗糙度为0.2nm以下。版权所有（C）2012，JPO＆INPIT

13. 发明专利

JP2003338464A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2003338464A
公开(公告)日：2003-11-28
申请号：JP2003066676
申请日：2003-03-12
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YOSHITAKA , KODERA MASAKO
IPC分类号： C23C28/00 , H01L21/28 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To suppress corrosion of a wiring when a solution is supplied to a semiconductor device where a wiring and a barrier metal are exposed.
SOLUTION: A rinse liquid 18 or a chemical 17 in which hydrogen is dissolved is supplied to a surface of the semiconductor device where a Cu wiring 12 and a barrier metal 11 are exposed on its surface.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：当将溶液供应到暴露了布线和阻挡金属的半导体器件时，抑制布线的腐蚀。解决方案：将溶解有氢的冲洗液18或化学物质17供给到其表面上露出Cu布线12和阻挡金属11的半导体器件的表面。版权所有（C）2004，JPO

14. 发明专利

JP2013128096A Chemical planarization method and chemical planarization device 审中-公开
标题翻译：化学平面化方法和化学平面化装置
公开(公告)号：JP2013128096A
公开(公告)日：2013-06-27
申请号：JP2012183554
申请日：2012-08-22
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YUKITERU , KODERA MASAKO , TOMITA HIROSHI , MINAMI FUKUGAKU , KAWASE AKIFUMI
IPC分类号： H01L21/304 , H01L21/306
CPC分类号： H01L21/30625 , B24B37/044 , B24B37/24 , H01L21/67075 , H01L21/67219
摘要： PROBLEM TO BE SOLVED: To provide an efficient chemical planarization method suppressing occurrence of a scratch.SOLUTION: A planarization method includes a step of forming a surface layer on a processing object film having recesses and protrusions, the surface layer extending along the recesses and protrusions and suppressing dissolution of the processing object film by being coupled with or adsorbed to the processing object film. The method further includes the steps of: rotating the processing object film and a processing body while bringing the processing object film and the processing body into contact with each other via the surface layer in a processing solution for dissolving the processing object film therein; removing the surface layer on protrusion portions of the recesses and protrusions while leaving the surface layer on recess portions of the recesses and protrusions; and making an amount of dissolution at the protrusion portions to be greater than that at the recess portions, thereby planarizing the processing object film.
摘要翻译：要解决的问题：提供抑制划痕发生的有效化学平面化方法。解决方案：平面化方法包括在具有凹陷和突起的处理对象膜上形成表面层的步骤，所述表面层沿着凹陷和突起延伸并且通过与处理对象膜的耦合或吸附而抑制加工对象膜的溶解加工对象薄膜。该方法还包括以下步骤：在处理对象薄膜和处理体中使处理对象薄膜和处理体在其中溶解处理对象薄膜的处理溶液中通过表面层彼此接触来旋转处理对象薄膜和处理体; 在凹部和突起的凹部上留下表面层的同时，除去凹部和突起的突出部分上的表面层; 并且使突出部分的溶解量大于凹部处的溶解量，从而使加工对象膜平坦化。版权所有（C）2013，JPO＆INPIT

15. 发明专利

JP2013099814A Polishing method and polishing apparatus 审中-公开
标题翻译：抛光方法和抛光装置
公开(公告)号：JP2013099814A
公开(公告)日：2013-05-23
申请号：JP2011244581
申请日：2011-11-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KODERA MASAKO , MATSUI YUKITERU
IPC分类号： B24B37/015 , H01L21/304
CPC分类号： B24B37/015 , B24B37/044 , B24B55/02
摘要： PROBLEM TO BE SOLVED: To efficiently perform the cooling of a polishing pad and slurry and the dressing of a surface of the polishing pad.SOLUTION: According to one embodiment, a polishing method includes steps of: pressing a substrate rotated against a rotating polishing pad 13 and supplying slurry on the polishing pad 13; measuring a surface temperature of the polishing pad 13; and when the surface temperature is not lower than a predetermined temperature, jetting a jet stream containing supercooled droplets from a nozzle 15 having a narrow portion toward the polishing pad 13.
摘要翻译：要解决的问题：为了有效地执行抛光垫和浆料的冷却以及抛光垫的表面的修整。解决方案：根据一个实施例，抛光方法包括以下步骤：按压旋转抛光垫13旋转的基板，并在抛光垫13上供应浆料; 测量抛光垫13的表面温度; 并且当表面温度不低于预定温度时，将含有过冷液滴的喷射流从具有窄部分的喷嘴15喷射到抛光垫13。版权所有（C）2013，JPO＆INPIT

16. 发明专利

JP2013077588A Substrate processing method 审中-公开
标题翻译：基板处理方法
公开(公告)号：JP2013077588A
公开(公告)日：2013-04-25
申请号：JP2011214831
申请日：2011-09-29
申请人： Toshiba Corp , 株式会社東芝
发明人： KODERA MASAKO , MINAMI FUKUGAKU
IPC分类号： H01L21/76 , H01L21/288 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/743 , H01L21/02282 , H01L21/67046 , H01L21/76229 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To enable an insulation layer, a wiring layer, and the likes to be buried in a groove pattern and reduce the processes and the cost.SOLUTION: A substrate processing method is used for burying a solvent medium in a groove formed on a surface of a substrate 10. The substrate 10 and a solvent medium holding material 22 are respectively rotated so that a surface of the substrate 10 and the solvent medium holding material 22 slide while the solvent medium 42 is supplied onto the surface of the substrate 10 and the solvent medium holding material 22, which is formed on the surface of the substrate 10 by an elastic material, is placed in contact with the surface of the substrate 10.
摘要翻译：要解决的问题：为了使绝缘层，布线层等被埋入凹槽图案中并且减少了工艺和成本。解决方案：使用基板处理方法将溶剂介质埋入形成在基板10的表面上的凹槽中。基板10和溶剂介质保持材料22分别旋转，使得基板10的表面和溶剂介质保持材料22在将溶剂介质42供给到基板10的表面上的同时滑动，并且通过弹性材料形成在基板10的表面上的溶剂介质保持材料22被放置成与基板10的表面。版权所有（C）2013，JPO＆INPIT

17. 发明专利

JP2013102090A Chemical planarization method and chemical planarization device 有权
标题翻译：化学平面化方法和化学平面化装置
公开(公告)号：JP2013102090A
公开(公告)日：2013-05-23
申请号：JP2011245683
申请日：2011-11-09
申请人： Toshiba Corp , 株式会社東芝
发明人： KODERA MASAKO , MATSUI YUKITERU
IPC分类号： H01L21/306
CPC分类号： H01L21/67086 , H01L21/31055 , H01L21/67011
摘要： PROBLEM TO BE SOLVED: To provide a chemical planarization method and a chemical planarization device for planarizing a silicon oxide film by suppressing generation of scratch.SOLUTION: The chemical planarization method includes a step for preparing a process liquid containing a silicofluoride hydrofluoric acid aqueous solution which contains silicon oxide dissolved in a saturated concentration. The method further includes a step for reducing the height of protrusions and recesses by changing the equilibrium state of the process liquid while bringing a silicon oxide film having protrusions and recesses into contact with the process liquid thereby dissolving the protrusions of the protrusions and recesses.
摘要翻译：要解决的问题：提供一种化学平面化方法和化学平面化装置，用于通过抑制划痕的产生来平坦化氧化硅膜。解决方案：化学平面化方法包括制备含有溶解在饱和浓度的氧化硅的含氟硅酸氢氟酸水溶液的处理液的步骤。该方法还包括通过改变处理液的平衡状态同时使具有突起和凹陷的氧化硅膜与处理液接触从而溶解突起和凹部的突起来降低突起和凹陷的高度的步骤。版权所有（C）2013，JPO＆INPIT

18. 发明专利

JP2012124258A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2012124258A
公开(公告)日：2012-06-28
申请号：JP2010272590
申请日：2010-12-07
申请人： Jsr Corp , Jsr株式会社 , Toshiba Corp , 株式会社東芝
发明人： MORI YASUMASA , SHIDA HIROTAKA , KAWAGUCHI TORU , EDA HAJIME , MINAMI FUKUGAKU , KODERA MASAKO , MATSUI YUKITERU
IPC分类号： H01L21/304 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) method using general-purpose polishing solution, by which recesses and seams in a wiring part can be minified, and which can finish a surface with oxidation resistance, and to provide a method of manufacturing a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes: a processed body manufacturing step of burying a conductive material into a groove to form a wiring part, and forming a conductive film made of the conductive material, on an insulating film having the groove provided on a semiconductor substrate; a first polishing processing step of performing chemical mechanical polishing to the conductive film while leaving the wiring part buried in the groove; and a second polishing processing step of polishing the insulating film and the wiring part while supplying a chemical mechanical polishing slurry and a water solution of a compound represented by the following formula (1).
摘要翻译：要解决的问题：提供一种使用通用抛光液的CMP（化学机械抛光）方法，通过该方法可以使布线部分中的凹陷和接缝变细，并且可以使其具有抗氧化性的表面，并且提供制造半导体器件的方法。解决方案：一种制造半导体器件的方法包括：将导电材料埋入沟槽中以形成布线部分的加工体制造步骤，以及由导电材料制成的导电膜，在具有凹槽设置在半导体衬底上; 对导电膜进行化学机械抛光同时将布线部分埋入槽中的第一抛光处理步骤; 以及第二抛光处理步骤，同时提供化学机械抛光浆料和由下式（1）表示的化合物的水溶液，来研磨绝缘膜和布线部分。版权所有（C）2012，JPO＆INPIT

19. 发明申请

WO2006022452A3 POLISHING APPARATUS AND POLISHING METHOD 审中-公开
标题翻译：抛光设备和抛光方法
公开(公告)号：WO2006022452A3
公开(公告)日：2006-06-08
申请号：PCT/JP2005016063
申请日：2005-08-26
申请人： EBARA CORP , KODERA MASAKO , MOCHIZUKI YOSHIHIRO , FUKUDA AKIRA , KODERA AKIRA , HIYAMA HIROKUNI , TSUJIMURA MANABU , HIROKAWA KAZUTO , FUKUNAGA AKIRA
发明人： KODERA MASAKO , MOCHIZUKI YOSHIHIRO , FUKUDA AKIRA , KODERA AKIRA , HIYAMA HIROKUNI , TSUJIMURA MANABU , HIROKAWA KAZUTO , FUKUNAGA AKIRA
IPC分类号： B24B37/04 , B24B49/00 , H01L21/00
CPC分类号： H01L21/6708 , B24B37/005 , B24B37/042 , B24B37/046 , B24B49/006 , B24B57/02
摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
摘要翻译：研磨装置（30）具有研磨面（32），保持晶片（W）的顶圈（36），使研磨面（32）和晶片（W）相对移动的马达（46,56）以相对速度彼此相对移动;以及垂直移动机构（54），用于在压力下将晶片（W）压靠在抛光表面（32）上。抛光装置（30）还具有控制器（44），用于在抛光速率不与压制压力和相对速度的乘积成比例的非普雷斯顿范围内调节抛光条件。抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液并且在晶片（W）的表面内实现均匀的抛光速率。

20. 发明专利

JP2003220556A POLISHING APPARATUS AND METHOD 审中-公开
公开(公告)号：JP2003220556A
公开(公告)日：2003-08-05
申请号：JP2003016795
申请日：2003-01-24
申请人： TOSHIBA CORP , EBARA CORP
发明人： OKUMURA KATSUYA , AOKI RIICHIRO , YAJIMA HIROMI , KODERA MASAKO , MISHIMA SHIRO , SHIGETA ATSUSHI , HIROSE MASAYOSHI , KIMURA NORIO , ISHIKAWA SEIJI
IPC分类号： B24B37/04 , B65G49/07 , H01L21/304 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a polishing apparatus, which polishes an object to be polished, and cleans and drys it, then transfers out the object that is clean and dry. SOLUTION: The polishing apparatus comprises a robot 10 for transferring the object S in the apparatus; a loading section 11, in which the object S to be polished is placed and which is arranged within reach of the gripping arm of the robot 10; a polishing section 13 in which the object S transferred thereto from the load section 11 is polished; a cleaning section 15 in which the polished object S is cleaned and dried; and an unloading section 12 in which the object S, clean and dry after having been polished, is placed and which is arranged within reach of the gripping arm of the robot 10. The robot 10 can pick the object S to be polished out of the loading section 11 and transfer the object S, which is polished, cleaned, and dried, to the unloading section 12. COPYRIGHT: (C)2003,JPO

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