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11. 发明授权

US07380330B2 Method for making magnetic write head 失效
标题翻译：磁头写入方法
公开(公告)号：US07380330B2
公开(公告)日：2008-06-03
申请号：US11186174
申请日：2005-07-21
申请人： Daniel Wayne Bedell , Aron Pentek , Katalin Pentek , Yi Zheng
发明人： Daniel Wayne Bedell , Aron Pentek , Katalin Pentek , Yi Zheng
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49052
摘要： After defining the P2 pole of a magnetic read head, alumina is deposited over it and planarized by CMP, with the portion of the alumina overlaying the ABS region of the P2 pole subsequently being masked by a photoresist layer and with the portions of the alumina overlaying the flare area, back gap region, and center tap regions of the P2 pole not being masked. A reactive ion mill is performed to expose the flare area, back gap region, and center tap regions of the P2 pole by removing the alumina over these portions, so that subsequent steps such as forming a layer of coiled conductors, forming a return pole, and forming stud connections along with removing the respective seed layers can be executed with the ABS region protected by the alumina and with the flare area, back gap region, and center tap region exposed.
摘要翻译：在定义磁读头的P2极之后，将氧化铝沉积在其上并通过CMP平坦化，其中覆盖P2极的ABS区域的氧化铝的部分随后被光致抗蚀剂层掩蔽，并且氧化铝的部分覆盖 P2极的光斑区域，背隙区域和中心抽头区域不被掩蔽。通过在这些部分上除去氧化铝，进行反应离子磨，以暴露P2极的火炬区域，后隙区域和中心抽头区域，从而形成后续步骤，例如形成线圈导体层，形成返回极，并且可以利用由氧化铝保护的ABS区域和暴露的火炬区域，后隙区域和中心抽头区域来执行形成螺柱连接以及移除相应的种子层。

12. 发明授权

US07729084B2 Formation of low resistance damascene coils 有权
标题翻译：形成低阻力镶嵌线圈
公开(公告)号：US07729084B2
公开(公告)日：2010-06-01
申请号：US11644446
申请日：2006-12-22
申请人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin
发明人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin
IPC分类号： G11B5/17
CPC分类号： G11B5/3123 , Y10T29/49043 , Y10T29/4906 , Y10T29/49064
摘要： In one embodiment and method of the present invention, a coil of a write head is created by forming a P1 pedestal layer and a back gap layer and further forming a coil pattern consistent with the coil to be formed and insulator spacers dispersed in the coil pattern, using a non-damascene process, thereafter the coil is formed by plating using a damascene process.
摘要翻译：在本发明的一个实施例和方法中，通过形成P1基座层和后间隙层，并且进一步形成与要形成的线圈一致的线圈图案并且将绝缘体间隔物分散在线圈图案中，形成写入头的线圈，使用非镶嵌工艺，然后通过使用镶嵌工艺电镀形成线圈。

13. 发明申请

US20100163523A1 FORMATION OF LOW RESISTANCE DAMASCENE COILS 失效
标题翻译：形成低电阻大线圈
公开(公告)号：US20100163523A1
公开(公告)日：2010-07-01
申请号：US12707652
申请日：2010-02-17
申请人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin , Sue Siyang Zhang
发明人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin , Sue Siyang Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/3123 , Y10T29/49043 , Y10T29/4906 , Y10T29/49064
摘要： In one embodiment and method of the present invention, a coil of a write head is created by forming a P1 pedestal layer and a back gap layer and further forming a coil pattern consistent with the coil to be formed and insulator spacers dispersed in the coil pattern, using a non-damascene process, thereafter the coil is formed by plating using a damascene process.
摘要翻译：在本发明的一个实施例和方法中，通过形成P1基座层和后间隙层，并且进一步形成与要形成的线圈一致的线圈图案并且将绝缘体间隔物分散在线圈图案中，形成写入头的线圈，使用非镶嵌工艺，然后通过使用镶嵌工艺电镀形成线圈。

14. 发明授权

US08397371B2 Process of manufacturing low resistance damascene coils 失效
标题翻译：制造低阻大马士革线圈的工艺
公开(公告)号：US08397371B2
公开(公告)日：2013-03-19
申请号：US12707652
申请日：2010-02-17
申请人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin , Sue Siyang Zhang
发明人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin , Sue Siyang Zhang
IPC分类号： G11B5/17 , G11B5/187
CPC分类号： G11B5/3123 , Y10T29/49043 , Y10T29/4906 , Y10T29/49064
摘要： In one embodiment and method of the present invention, a coil of a write head is created by forming a P1 pedestal layer and a back gap layer and further forming a coil pattern consistent with the coil to be formed and insulator spacers dispersed in the coil pattern, using a non-damascene process, thereafter the coil is formed by plating using a damascene process.
摘要翻译：在本发明的一个实施例和方法中，通过形成P1基座层和后间隙层，并且进一步形成与要形成的线圈一致的线圈图案并且将绝缘体间隔物分散在线圈图案中，形成写入头的线圈，使用非镶嵌工艺，然后通过使用镶嵌工艺电镀形成线圈。

15. 发明授权

US07380332B2 Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same 失效
标题翻译：磁头线圈系统和镶嵌/反应离子蚀刻方法制造相同
公开(公告)号：US07380332B2
公开(公告)日：2008-06-03
申请号：US11040387
申请日：2005-01-20
申请人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
发明人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
IPC分类号： G11B5/17
CPC分类号： G11B5/313 , G11B5/3123 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.
摘要翻译：提供一种用于制造用于磁头的线圈结构的系统和方法。首先，沉积有沉积在绝缘层上的光致抗蚀剂层的绝缘层。此外，硅介电层作为硬掩模沉积在光致抗蚀剂层上。然后掩蔽硅介电层。随后使用反应离子蚀刻（即CF 4 / CH 3）3在硅介电层中形成多个通道。然后将硅介电层用作硬掩模，以使用例如H 2/2 N 2 / CH的反应离子蚀刻将光致抗蚀剂层中的沟道图案转印还原化学反应。为了获得具有期望的高纵横比的最佳通道轮廓，通道形成包括限定第一角度的第一段和限定第二角度的第二段。此后，导电种子层沉积在通道中，并且通道填充有导电材料以限定线圈结构。然后可以使用化学机械抛光来平坦化导电材料。

16. 发明授权

US07022248B2 Method for patterning a self-aligned coil using a damascene process 失效
标题翻译：使用镶嵌工艺图案化自对准线圈的方法
公开(公告)号：US07022248B2
公开(公告)日：2006-04-04
申请号：US10652878
申请日：2003-08-29
申请人： Daniel Wayne Bedell , Quang Le , Edward Hin Pong Lee , Son Van Nguyen , Vladimir Nikitin , Murali Ramasubramanian
发明人： Daniel Wayne Bedell , Quang Le , Edward Hin Pong Lee , Son Van Nguyen , Vladimir Nikitin , Murali Ramasubramanian
IPC分类号： B44C1/22
CPC分类号： G11B5/3967 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3136 , G11B5/3163 , H01F41/041 , Y10T29/49021
摘要： A method for patterning a self-aligned coil using a damascene process is disclosed. Coil pockets are formed in a first insulation layer disposed over a first pole layer. A barrier/seed layer is deposited along walls of the coil pockets in the insulation layer. Copper is formed in the coil pockets and over the insulation layer. The copper is planarized down to the insulation layer. The self-aligned coil process packs more copper into the same coil pocket and relaxes the coil alignment tolerance. Protrusions are prevented because of the more efficient and uniform spacing of the coil to reduce heat buildup in the head during a write.
摘要翻译：公开了一种使用镶嵌工艺图案化自对准线圈的方法。在设置在第一极层上的第一绝缘层中形成线圈腔。隔离层/籽晶层沿绝缘层中的线圈袋的壁被沉积。在线圈袋中形成铜，并在绝缘层上形成铜。铜平坦化到绝缘层。自对准线圈工艺将更多的铜包装到相同的线圈袋中，并松弛线圈对准公差。由于在写入期间线圈的间隔更加有效和均匀以减少头部的积聚，所以防止了突起。

17. 发明申请

US20080247086A1 Method for forming interleaved coils with damascene plating 审中-公开
标题翻译：用镶嵌电镀形成交错线圈的方法
公开(公告)号：US20080247086A1
公开(公告)日：2008-10-09
申请号：US11644574
申请日：2007-02-08
申请人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Vladimir Nikitin
发明人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Vladimir Nikitin
IPC分类号： G11B5/33 , G11B5/23 , B44C1/22 , B05D3/14
CPC分类号： G11B5/3123 , G11B5/17 , G11B5/3136 , G11B5/3163
摘要： A method of forming interleaved coils of a write head is disclosed using a combination of non-damascene and damascene processes.
摘要翻译：使用非镶嵌和镶嵌工艺的组合公开了形成写入头的交错线圈的方法。

18. 发明授权

US07397634B2 Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same 失效
公开(公告)号：US07397634B2
公开(公告)日：2008-07-08
申请号：US10602462
申请日：2003-06-23
申请人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
发明人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
IPC分类号： G11B5/17
CPC分类号： G11B5/313 , G11B5/3123 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.

19. 发明申请

US20080151424A1 Formation of low resistance damascene coils 有权
标题翻译：形成低阻力镶嵌线圈
公开(公告)号：US20080151424A1
公开(公告)日：2008-06-26
申请号：US11644446
申请日：2006-12-22
申请人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin
发明人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin
IPC分类号： G11B5/17
CPC分类号： G11B5/3123 , Y10T29/49043 , Y10T29/4906 , Y10T29/49064
摘要： In one embodiment and method of the present invention, a coil of a write head is created by forming a P1 pedestal layer and a back gap layer and further forming a coil pattern consistent with the coil to be formed and insulator spacers dispersed in the coil pattern, using a non-damascene process, thereafter the coil is formed by plating using a damascene process.
摘要翻译：在本发明的一个实施例和方法中，通过形成P 1基座层和后间隙层，并且进一步形成与要形成的线圈一致的线圈图案，并且将绝缘体间隔物分散在线圈中，形成写入头的线圈图案，使用非镶嵌工艺，此后通过使用镶嵌工艺的镀层形成线圈。

20. 发明申请

US20060273066A1 Method for manufacturing a magnetic sensor having an ultra-narrow track width 审中-公开
标题翻译：具有超窄轨道宽度的磁传感器的制造方法
公开(公告)号：US20060273066A1
公开(公告)日：2006-12-07
申请号：US11143902
申请日：2005-06-01
申请人： Daniel Wayne Bedell , Vladimir Nikitin
发明人： Daniel Wayne Bedell , Vladimir Nikitin
IPC分类号： B44C1/22 , C23F1/00 , C03C15/00
CPC分类号： C23F4/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： A method for constructing a device such as a magnetoresistive sensor having an extremely narrow width (track width). A photoresist mask is deposited with an edge where an edge of the device is to be located. A layer of material that is susceptible to removal by reactive ion etch (RIEable material) is then deposited over this first mask. The RIEable material is deposited by a conformal deposition method so that it covers the edge of the first mask substantially the same thickness as it covers the other areas. A reactive ion etch (RIE) is then performed to remove horizontally disposed portions of the RIEable layer intact, while leaving at least a portion of the RIEable material at the edge of the sensor intact. This remaining portion of the RIEable material can then be used as a very narrow mask for defining a device such as a magnetoresitive sensor by ion milling.
摘要翻译：一种用于构造诸如具有极窄宽度（磁道宽度）的磁阻传感器的装置的方法。光刻胶掩模沉积有设备边缘所在的边缘。然后通过反应离子蚀刻（RIEable材料）容易去除的材料层沉积在该第一掩模上。 RIEable材料通过保形沉积方法沉积，使得它覆盖第一掩模的边缘，其覆盖其它区域的厚度基本相同。然后执行反应离子蚀刻（RIE）以完全去除RIEable层的水平放置部分，同时将可再循环材料的至少一部分留在传感器的边缘完好无损。然后可以将RIEable材料的剩余部分用作通过离子铣削定义诸如磁阻传感器的装置的非常窄的掩模。

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