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11. 发明授权

US4315477A Semi-open liquid phase epitaxial growth system 失效
标题翻译：半开放液相外延生长系统
公开(公告)号：US4315477A
公开(公告)日：1982-02-16
申请号：US214548
申请日：1980-12-09
申请人： Cheng-Chi Wang , August H. B. Vanderwyck
发明人： Cheng-Chi Wang , August H. B. Vanderwyck
IPC分类号： C30B19/04 , C30B19/06 , H01L7/00
CPC分类号： C30B19/061 , C30B19/04 , C30B29/48 , Y10S117/907 , Y10S438/909 , Y10S438/971
摘要： Disclosed is a semi-open method of growing an epitaxial HgCdTe layer on a CdTe substrate, including the steps of placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container, flowing an inert gas under pressure through the container to reduce the vaporization of Hg from the solution, establishing a cooling zone within the container to condense Hg vaporized from the solution, increasing the temperature of the solution for a time sufficient to react the Hg and Cd with the Te in the solution, reducing the temperature of the solution, establishing contact between the solution and the substrate, maintaining the solution at a temperature sufficient to melt the substrate for a time sufficient to eliminate a Hg vapor diffused layer, reducing the temperature of the solution to near the saturation temperature, and reducing the temperature of the solution at a rate sufficient to cause the solution to crystallize in an HgCdTe layer on the CdTe substrate.
摘要翻译：公开了一种在CdTe基板上生长外延HgCdTe层的半开放方法，包括以下步骤：将CdTe基板和Hg，Cd和Te的生长溶液放置在压力和温度受控的容器内，使惰性气体流过压力通过容器以减少Hg从溶液的蒸发，在容器内建立冷却区以冷凝从溶液蒸发的Hg，使溶液的温度升高足以使Hg和Cd与Te反应的时间溶液，降低溶液的温度，建立溶液与基底之间的接触，将溶液保持在足以熔化基底的温度足以消除Hg蒸气扩散层的时间，将溶液的温度降低到接近饱和温度，并以足以使溶液在第二次HgCdTe层中结晶的速率降低溶液的温度 e CdTe基板。

12. 发明授权

US08158367B2 Cancer diagnosis based on levels of antibodies against Globo H and its fragments 有权
标题翻译：基于针对Globo H及其片段的抗体水平的癌症诊断
公开(公告)号：US08158367B2
公开(公告)日：2012-04-17
申请号：US12485516
申请日：2009-06-16
申请人： Chi-Huey Wong , Chung-Yi Wu , Cheng-Chi Wang , Alice L. Yu
发明人： Chi-Huey Wong , Chung-Yi Wu , Cheng-Chi Wang , Alice L. Yu
IPC分类号： G01N33/53
CPC分类号： G01N33/57488 , G01N33/57415
摘要： A cancer diagnostic method using a glycan array that contains Gb5 and Globo H, Bb2, Bb3, and/or Bb4.
摘要翻译：使用含有Gb5和Globo H，Bb2，Bb3和/或Bb4的聚糖阵列的癌症诊断方法。

13. 发明申请

US20100247571A1 METHODS AND COMPOSITIONS FOR IMMUNIZATION AGAINST VIRUS 有权
标题翻译：用于免疫病毒的方法和组合物
公开(公告)号：US20100247571A1
公开(公告)日：2010-09-30
申请号：US12748265
申请日：2010-03-26
申请人： Chi-Huey Wong , Che Ma , Cheng-Chi Wang , Juine-Ruey CHEN
发明人： Chi-Huey Wong , Che Ma , Cheng-Chi Wang , Juine-Ruey CHEN
IPC分类号： A61K39/145 , C07K14/11 , C07K14/135 , C07K14/18 , C07K14/155 , A61K39/155 , A61K39/12 , A61K39/29 , A61K39/21 , C12P21/02 , A61P31/12 , A61P31/16 , A61P31/14 , A61P31/18
CPC分类号： A61K39/145 , A61K39/12 , A61K2039/55505 , C07K16/1018 , C07K2317/76 , C12N7/00 , C12N2740/11034 , C12N2740/16034 , C12N2760/16122 , C12N2760/16134 , C12N2760/16171 , C12N2770/24134 , Y02A50/386
摘要： Immunogenic compositions comprising partially glycosylated viral glycoproteins for use as vaccines against viruses are provided. Vaccines formulated using mono-, di-, or tri-glycosylated viral surface glycoproteins and polypeptides provide potent and broad protection against viruses, even across strains. Pharmaceutical compositions comprising monoglycosylated hemagglutinin polypeptides and vaccines generated therefrom and methods of their use for prophylaxis or treatment of viral infections are disclosed. Methods and compositions are disclosed for influenza virus HA, NA and M2, RSV proteins F, G and SH, Dengue virus glycoproteins M or E, hepatitis C virus glycoprotein E1 or E2 and HIV glycoproteins gp120 and gp41.
摘要翻译：提供了包含部分糖基化的病毒糖蛋白的免疫原性组合物，其用作抗病毒疫苗。使用单糖，二糖或三糖基化的病毒表面糖蛋白和多肽配制的疫苗甚至可以跨毒株提供有效和广泛的防病毒保护。公开了包含单糖基化血凝素多肽和由其产生的疫苗的药物组合物及其用于预防或治疗病毒感染的方法。公开了用于流感病毒HA，NA和M2，RSV蛋白F，G和SH，登革病毒糖蛋白M或E，丙型肝炎病毒糖蛋白E1或E2和HIV糖蛋白gp120和gp41的方法和组合物。

14. 发明申请

US20070275311A1 FLAT PANEL DISPLAY MANUFACTURING 有权
标题翻译：平板显示制造
公开(公告)号：US20070275311A1
公开(公告)日：2007-11-29
申请号：US11681325
申请日：2007-03-02
申请人： Cheng-Chi Wang
发明人： Cheng-Chi Wang
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/2024 , G03F7/70458 , G03F7/70466 , G03F7/70791 , G03F9/7084
摘要： A method includes exposing a photo-resist layer using a first exposure machine that has a first resolution to cause the photo-resist layer to have an exposed portion and an un-exposed portion. The photo-resist layer is exposed using a second exposure machine that has a second resolution to further expose the un-exposed portion of the photo-resist layer, the first resolution being different from the second resolution.
摘要翻译：一种方法包括使用具有第一分辨率以使光致抗蚀剂层具有暴露部分和未曝光部分的第一曝光机曝光光刻胶层。使用具有第二分辨率的第二曝光机曝光光致抗蚀剂层，以进一步暴露光致抗蚀剂层的未曝光部分，第一分辨率不同于第二分辨率。

15. 发明授权

US06620527B2 Hillock-free aluminum wiring layer and method of forming the same 有权
公开(公告)号：US06620527B2
公开(公告)日：2003-09-16
申请号：US10045102
申请日：2002-01-15
申请人： Cheng-Chi Wang
发明人： Cheng-Chi Wang
IPC分类号： B32B1520
CPC分类号： H01L23/53214 , B32B15/02 , B32B15/20 , C22C21/00 , C23C14/165 , H01L21/32051 , H01L21/76838 , H01L2924/0002 , Y10S428/931 , Y10T428/12639 , Y10T428/12764 , Y10T428/12986 , Y10T428/24942 , Y10T428/24992 , H01L2924/00
摘要： A hillock-free wiring layer and method of forming the same are provided. The wiring layer includes at least two aluminum (Al) layers formed on a substrate, and each of the Al layers includes Al crystal particles. For any two Al layers of the wring layer, the one closer to the substrate is called the lower layer and the other one is called the higher layer. Besides, the Al crystal particles of the higher Al layer are larger and denser than that of the lower Al layer, and the lower Al layer has a higher resistance than that of the higher Al layer. By the invention, a wiring layer using either pure Al or an Al-based alloy is capable of preventing the occurrence of hillocks and reducing manufacturing cost.

16. 发明授权

US06284420B1 Titanyl phthalocyanine, method for production thereof and electrophotographic photoreceptor containing the same 有权
标题翻译：酞菁钛，其制备方法和含有它的电子照相感光体
公开(公告)号：US06284420B1
公开(公告)日：2001-09-04
申请号：US09492872
申请日：2000-01-26
申请人： Jia-Ming Liu , Kuo-Tung Huang , Chiang-Yun Lee , Mei-Tyz Peng , Cheng-Chi Wang , Rong-Ming Ke
发明人： Jia-Ming Liu , Kuo-Tung Huang , Chiang-Yun Lee , Mei-Tyz Peng , Cheng-Chi Wang , Rong-Ming Ke
IPC分类号： G03G1502
CPC分类号： C09B67/0026 , C09B67/0016 , G03G5/0696
摘要： A peroxide-modified titanyl phthalocyanine for use in preparing charge generating layer of a photoreceptor is disclosed. The peroxide-modified titanyl phthalocyanine is obtained by subjecting titanyl phthalocyanine to a peroxide-induced complexation-mediated crystal transformation at a low temperature. The peroxide-modified titanyl phthalocyanine is characterized by having Bragg diffraction angles of 7.3, 9.4, 14.0, 24.1, 25.7, 27.2 and 28.5 degrees, and vibrational absorption resonances at 1486 cm (superscript: −1), 1420 cm (superscript: −1), 1134 cm (superscript: −1), 1078 cm (superscript: −1), 966 cm (superscript: −1), 900 cm (superscript: −1), 762 cm (superscript: −1) and 736 cm (superscript: −1). The photoreceptor exhibits excellent photosensitivity at wavelengths in the near-infrared range and has a unique crystal form, especially the peroxide-modified titanyl phthalocyanine shows a higher distinct absorption peak at the wavelength of 780 nm.
摘要翻译：公开了用于制备感光体的电荷产生层的过氧化物修饰的氧钛酞菁。过氧化物修饰的氧钛酞菁通过在低温下经过氧化钛诱导的络合介导的晶体转变而得到。过氧化物修饰的氧钛酞菁的特征在于布拉格衍射角为7.3,9.4,14.0,24.1,25.7,27.2和28.5度，1486cm（上标：-1），1420cm（上标：-1）的振动吸收共振），1134cm（上标：-1），1078cm（上标：-1），966cm（上标：-1），900cm（上标：-1），762cm（上标：-1）和736cm 上标：-1）。感光体在近红外范围的波长处表现出优异的光敏性，并且具有独特的晶体形式，特别是过氧化物修饰的氧钛酞菁在780nm波长处显示出更高的不同吸收峰。

17. 发明授权

US4376663A Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate 失效
标题翻译：在CdTe基板上生长的HgCdTe的外延层上生长CdTe外延层的方法
公开(公告)号：US4376663A
公开(公告)日：1983-03-15
申请号：US328766
申请日：1981-12-08
申请人： Cheng-Chi Wang , Muren Chu
发明人： Cheng-Chi Wang , Muren Chu
IPC分类号： H01L21/368 , H01L21/465 , H01L31/109 , H01L31/18 , H01L21/208
CPC分类号： H01L31/1832 , H01L21/02411 , H01L21/02433 , H01L21/0248 , H01L21/02562 , H01L21/02568 , H01L21/02625 , H01L21/02628 , H01L21/02658 , H01L21/465 , H01L31/109 , H01L31/1828 , Y02E10/543 , Y10S438/955
摘要： Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase epitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe=36:5:0.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520.degree. C. The layers were grown on (111)A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTe/Hg.sub.1-x Cd.sub.x Te interface has been as small as 0.3 .mu.m for the thin CdTe epilayer. The first CdTe/HgCdTe heterojunction sensitive to .about.2.8 .mu.m at 77K has been demonstrated.
摘要翻译：公开了通过液相外延在HgCdTe上生长CdTe层的方法。用于生长的溶液包括具有少量CdTe的Sn和Hg。典型的组成是Sn：Hg：CdTe = 36:5:0.15重量份。生长温度是溶液中CdTe量的函数。对于所述的典型组成，生长温度为约520℃。将层在（111）A取向的CdTe底物上生长。首先生长具有所需Cd组成的HgCdTe外延层，随后在HgCdTe外延层上生长CdTe的外延层。 CdTe / Hg1-xCdxTe界面的交叉扩散对于薄的CdTe外延层来说已经小到0.3μm。已经证明了在77K下对于差异2.8μm敏感的第一CdTe / HgCdTe异质结。

18. 发明授权

US4263065A Semi-open liquid phase epitaxial growth system 失效
标题翻译：半开放液相外延生长系统
公开(公告)号：US4263065A
公开(公告)日：1981-04-21
申请号：US132756
申请日：1980-03-24
申请人： Cheng-Chi Wang , August H. B. Vanderwyck
发明人： Cheng-Chi Wang , August H. B. Vanderwyck
IPC分类号： C30B19/04 , H01L21/208
CPC分类号： C30B19/04 , C30B29/48 , Y10S117/907 , Y10S438/955
摘要： A semi-open method for growing an epitaxial layer on a substrate by increasing the pressure, refluxing the volatile components, contacting the substrate with the melt solution, and reducing the solution temperature.
摘要翻译：一种用于通过增加压力，回流挥发性组分，使基底与熔融溶液接触并降低溶液温度在衬底上生长外延层的半开放方法。

19. 发明申请

US20050101071A1 Thin film transistor structure and method of manufacturing the same 有权
标题翻译：薄膜晶体管结构及其制造方法
公开(公告)号：US20050101071A1
公开(公告)日：2005-05-12
申请号：US10980954
申请日：2004-11-04
申请人： Cheng-Chi Wang
发明人： Cheng-Chi Wang
IPC分类号： H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66765 , H01L29/78669
摘要： The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate layer, an insulation layer, an amorphous silicon layer and an ohmic contact layer, and the latter is achieved by using the stacked structure as a mask and by exposing the substrate from the back surface.
摘要翻译：本发明通过避免光感应电流来改善TFT结构的质量，并且通过减少该工艺中所需的掩模数目来降低制造成本，其中前者通过包括栅极层，绝缘层，非晶硅层和欧姆接触层，后者通过使用层叠结构作为掩模并通过使基板从背面曝光来实现。

20. 发明授权

US5192695A Method of making an infrared detector 失效
标题翻译：制作红外探测器的方法
公开(公告)号：US5192695A
公开(公告)日：1993-03-09
申请号：US727402
申请日：1991-07-09
申请人： Cheng-Chi Wang , Yet-Zen Liu , Muren Chu
发明人： Cheng-Chi Wang , Yet-Zen Liu , Muren Chu
IPC分类号： H01L31/109 , H01L31/18
CPC分类号： H01L31/1832 , H01L31/109 , Y10S148/031 , Y10S438/936
摘要： HgCdTe semiconductor material having an n-type epitaxial layer is grown on a substrate. A graded p-type epitaxial layer is grown on the n-type layer. The p-type layer is graded such that the large bandgap region is adjacent the heterojunction with the narrow bandgap region at the surface of this layer. The periphery of the p-type layer is then etched to expose the large bandgap material. A HgCdTe passivation layer may then be formed on the p-type layer. A resultant structure is then mesa etched. A metal, such as indium, is formed along the walls of the mesa structure. Indium is selected to form a good ohmic contact with the n-type layer and a Schottky barrier with the large bandgap exposed edge of the p-type layer. In this way, the PN junction is passivated at the large bandgap material. The remaining narrow bandgap material in the p-type will form a good ohmic contact to a metal contact formed on this layer.
摘要翻译：具有n型外延层的HgCdTe半导体材料生长在基板上。渐变的p型外延层生长在n型层上。 p型层被分级，使得大的带隙区域与该层表面处的窄带隙区域的异质结相邻。然后蚀刻p型层的周边以暴露大的带隙材料。然后可以在p型层上形成HgCdTe钝化层。然后将得到的结构台面蚀刻。沿着台面结构的壁形成诸如铟的金属。选择铟以与n型层形成良好的欧姆接触，并且形成具有p型层的大带隙暴露边缘的肖特基势垒。以这种方式，PN结在大的带隙材料上被钝化。 p型中剩余的窄带隙材料将与形成在该层上的金属接触形成良好的欧姆接触。

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