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11. 发明申请

US20050047011A1 Short yoke stitched writer with low DC coil resistance 有权
标题翻译：具有低直流线圈电阻的短轭缝编写器
公开(公告)号：US20050047011A1
公开(公告)日：2005-03-03
申请号：US10647762
申请日：2003-08-25
申请人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang
发明人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang
IPC分类号： G11B5/11 , G11B5/147 , G11B5/17 , G11B5/187 , G11B5/29
CPC分类号： G11B5/295 , G11B5/11 , G11B5/17 , G11B5/1871 , Y10T29/49002 , Y10T29/49021 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.
摘要翻译：用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。这增加了线圈的直流电阻。在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。

12. 发明授权

US06668443B2 Process for manufacturing a spin valve recording head 失效
标题翻译：制造旋转阀记录头的方法
公开(公告)号：US06668443B2
公开(公告)日：2003-12-30
申请号：US09917347
申请日：2001-07-30
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

13. 发明授权

US06556377B2 Stitched write head design having a sunken shared pole 失效
公开(公告)号：US06556377B2
公开(公告)日：2003-04-29
申请号：US10236580
申请日：2002-09-06
申请人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
IPC分类号： G11B5147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49048
摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

14. 发明授权

US06943995B2 Continuous free layer spin valve sensor with patterned exchange underlayer stabilization 失效
标题翻译：连续自由层旋转阀传感器，具有图案交换底层稳定性
公开(公告)号：US06943995B2
公开(公告)日：2005-09-13
申请号：US10616724
申请日：2003-07-10
申请人： Tai Min , Po-Kang Wang , Moris Musa Dovek
发明人： Tai Min , Po-Kang Wang , Moris Musa Dovek
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
摘要翻译：为了形成自旋阀装置，通过形成间隙层开始。在缓冲层上形成具有耐火材料层的缓冲层。包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层，包括堆叠有铁磁层的下反铁磁层或与永久磁性层堆叠的Cr层。通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。无形，固定，间隔和反铁磁层。在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。

15. 发明授权

US06606782B2 Method of forming a continuous free layer spin valve sensor with patterned exchange underlayer stabilization 失效
标题翻译：形成具有图案交换底层稳定性的连续自由层自旋阀传感器的方法
公开(公告)号：US06606782B2
公开(公告)日：2003-08-19
申请号：US10104778
申请日：2002-03-22
申请人： Tai Min , Po-Kang Wang , Moris Musa Dovek
发明人： Tai Min , Po-Kang Wang , Moris Musa Dovek
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
摘要翻译：为了形成自旋阀装置，通过形成间隙层开始。在缓冲层上形成具有耐火材料层的缓冲层。包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层包括堆叠有铁磁层的下反铁磁层或者与永久磁性层堆叠的Cr层。通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。无形，固定，间隔和反铁磁层。在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。

16. 发明授权

US08184399B2 Magnetic write head with thin and thick portions for balancing writability and ate 有权
标题翻译：磁性写头，薄而厚的部分，用于平衡书写和吃
公开(公告)号：US08184399B2
公开(公告)日：2012-05-22
申请号：US12924416
申请日：2010-09-27
申请人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng-Chyi Han , Jiun-Ting Lee , Po-Kang Wang
发明人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng-Chyi Han , Jiun-Ting Lee , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.
摘要翻译：制造具有可变厚度的锥形主极的垂直磁记录（PMR）头。极的锥形部分在ABS尖端处，并且其可以由前缘或后缘处的斜面或两者形成。锥形终止形成最大厚度的区域t1，其向近处延伸一定距离。超过该最大厚度的区域t1，然后将极减小到恒定的最小厚度t2。磁轭连接到恒定最小厚度的区域。这个极设计需要更少的通量，因为它附着在磁轭上的磁极的较薄区域，而刚好在锥形ABS之前较厚的区域提供额外的磁通来驱动刚好在ABS之前的极点，因此高清晰度和场增益是实现了，但边缘明显减少。

17. 发明申请

US20120075749A1 Magnetic write head with thin and thick portions for balancing writability and ate 有权
公开(公告)号：US20120075749A1
公开(公告)日：2012-03-29
申请号：US12924416
申请日：2010-09-27
申请人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng Chyi Han , Jiun-Ting Lee , Po-Kang Wang
发明人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng Chyi Han , Jiun-Ting Lee , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/10
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

18. 发明授权

US06524491B1 Double plate-up process for fabrication of composite magnetoresistive shared poles 失效
标题翻译：用于制造复合磁阻共享极的双层平板工艺
公开(公告)号：US06524491B1
公开(公告)日：2003-02-25
申请号：US09298935
申请日：1999-04-26
申请人： Chun Liu , Cherng-Chyi Han , Kochan Ju , Po-Kang Wang , Jei-Wei Chang
发明人： Chun Liu , Cherng-Chyi Han , Kochan Ju , Po-Kang Wang , Jei-Wei Chang
IPC分类号： G11B5127
CPC分类号： G11B5/3967 , G11B5/3163 , Y10T29/49021 , Y10T29/49032
摘要： A method of manufacturing a magnetic recording head includes the following steps. Form a low magnetic moment, first magnetic shield layer over a substrate. Form a read gap layer with a magnetoresistive head over the first shield layer. Form a seed layer over the read gap layer covered with a frame mask with a width “F”. Form a PLM second shield layer over the seed layer and planarize the shield layer. Form a non-magnetic copper or dielectric spacer layer over the PLM second shield layer. Form a first HMM, lower pole layer over the non-magnetic spacer layer. Cover the first HMM, lower pole layer with a write gap layer. Form an write head mask composed of two parallel rows of resist with an outer width “W” over the seed layer. Between the two rows of resist of the write head mask is a trench having a width “N”. Then form an HMM, upper pole layer over the write gap layer aside from the write head mask. Outside of the write head mask remove the upper pole layer and shape the lower pole layer by an IBE process.
摘要翻译：制造磁记录头的方法包括以下步骤。在基板上形成低磁矩，第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。在覆盖有宽度为“F”的框架掩模的读取间隙层上形成种子层。在种子层上形成PLM第二屏蔽层，并平整屏蔽层。在PLM第二屏蔽层上形成非磁性铜或电介质间隔层。在非磁性间隔层上形成第一个HMM，下极层。覆盖第一个HMM，具有写间隙层的下极层。在种子层上形成具有外部宽度“W”的两个平行的抗蚀剂行的写入头罩。写头掩模的两行抗蚀剂之间是宽度为“N”的沟槽。然后在写入头部掩模之外的写间隙层上形成HMM，上极层。在写头掩模之外，通过IBE工艺去除上极层并形成下极层。

19. 发明授权

US06230390B1 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06230390B1
公开(公告)日：2001-05-15
申请号：US09182761
申请日：1998-10-30
申请人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
发明人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： G11B5/3954 , G11B5/3932 , H04R15/00 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对的第一对横向磁偏压图案化的偏磁层基本上消磁时，向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

20. 发明授权

US06449131B2 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06449131B2
公开(公告)日：2002-09-10
申请号：US09818963
申请日：2001-03-28
申请人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
发明人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
IPC分类号： G11B539
CPC分类号： G11B5/3954 , G11B5/3932 , H04R15/00 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对成对的第一对横向磁偏压图案化磁偏置层时，基本上不消磁向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

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