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    • 12. 发明授权
    • Electroluminescent display device and method of fabricating the same
    • 电致发光显示装置及其制造方法
    • US08278818B2
    • 2012-10-02
    • US11143952
    • 2005-06-03
    • Chang-Yong JeongTae-Wook KangChang-Soo KimYu-Sung Cho
    • Chang-Yong JeongTae-Wook KangChang-Soo KimYu-Sung Cho
    • H05B33/00
    • H01L27/3246H01L27/3283H01L51/5256
    • An electroluminescent (EL) display device and a method of fabricating the same are provided. The device includes a substrate; a plurality of pixel electrodes disposed on the substrate; a pixel defining layer disposed on the pixel electrodes and having an opening part exposing a predetermined part of each of the pixel electrodes; and at least one barrier layer comprised in and/or on the pixel defining layer. In this device, the pixel defining layer includes at least one barrier layer in order to reduce the amount of outgas from the pixel defining layer and prevent degradation of an emission portion due to the outgas. Also, the pixel defining layer is formed to a sufficiently small thickness to facilitate a subsequent process using a laser induced thermal imaging (LITI) process.
    • 提供一种电致发光(EL)显示装置及其制造方法。 该装置包括基板; 设置在所述基板上的多个像素电极; 设置在所述像素电极上并具有使每个所述像素电极的预定部分露出的开口部的像素限定层; 以及包含在像素限定层中和/或上的至少一个势垒层。 在该装置中,像素限定层包括至少一个阻挡层,以便减少来自像素限定层的排气量,并防止由于排出气体引起的排放部分的劣化。 此外,像素限定层形成为足够小的厚度以便于使用激光诱导热成像(LITI)工艺的后续处理。
    • 15. 发明申请
    • Organic light emitting display device and method of fabricating the same
    • 有机发光显示装置及其制造方法
    • US20050269946A1
    • 2005-12-08
    • US11131963
    • 2005-05-18
    • Chang-Yong JeongTae-Wook KangChang-Soo Kim
    • Chang-Yong JeongTae-Wook KangChang-Soo Kim
    • H05B33/00H01L51/52H05B33/22
    • H01L27/3258H01L27/3246H01L51/5209
    • An organic light emitting display device (OLED) and a method of fabricating the same, in which electric field influence between first and second electrodes is reduced in an edge region of a unit pixel. The OLED includes a substrate, and a thin film transistor (TFT) located on the substrate. A passivation layer is located on the TFT over substantially an entire surface of the substrate, and has a via hole for exposing source or drain electrode, and a groove. A first electrode on the passivation layer is in electrical contact with the exposed source or drain electrode through the via hole, and has an edge located in the groove. A pixel defining layer is located on the first electrode and has an opening for exposing a predetermined portion of the first electrode. An organic layer is in contact with the predetermined portion, and a second electrode is formed on the organic layer.
    • 有机发光显示装置(OLED)及其制造方法,其中第一和第二电极之间的电场影响在单位像素的边缘区域中减小。 OLED包括基板和位于基板上的薄膜晶体管(TFT)。 钝化层位于基板的基本上整个表面上的TFT上,并且具有用于暴露源极或漏极以及沟槽的通孔。 钝化层上的第一电极通过通孔与暴露的源极或漏极电接触,并且具有位于沟槽中的边缘。 像素限定层位于第一电极上并且具有用于暴露第一电极的预定部分的开口。 有机层与预定部分接触,在有机层上形成第二电极。
    • 17. 发明授权
    • Thin film transistor and method of manufacturing the same
    • 薄膜晶体管及其制造方法
    • US07598111B2
    • 2009-10-06
    • US11683288
    • 2007-03-07
    • Choong-Youl ImTae-Wook KangChang-Yong Jeong
    • Choong-Youl ImTae-Wook KangChang-Yong Jeong
    • H01L21/00
    • H01L27/1288G02F1/136227G02F2001/136231H01L27/1214H01L27/1248H01L27/3244
    • A thin film transistor and a method of manufacturing the same are disclosed. More specifically, there is provided a thin film transistor having a thin film transistor and a method of manufacturing the same wherein an inorganic layer and an organic planarization layer are sequentially formed on the surface of a substrate on source/drain electrode of a thin film transistor having a semiconductor layer, a gate, source/drain areas and the source/drain electrodes, and a blanket etching process is performed to the organic planarization layer to planarize the inorganic layer. After forming a photoresist pattern on the inorganic layer, an etching process is performed to form a hole coupling a pixel electrode with one of the source/drain electrodes. According to the manufacturing method, the hole may be formed using one mask, thereby simplifying a manufacturing process, and improving an adhesion with the pixel electrode by the inorganic layer formed above. This thin film transistor may be appropriately applied to the active matrix organic electro luminescence display.
    • 公开了一种薄膜晶体管及其制造方法。 更具体地说,提供一种具有薄膜晶体管的薄膜晶体管及其制造方法,其中无机层和有机平面化层依次形成在薄膜晶体管的源极/漏极上的衬底的表面上 具有半导体层,栅极,源极/漏极区域和源极/漏极电极,并且对有机平坦化层进行覆盖蚀刻工艺以平坦化无机层。 在无机层上形成光致抗蚀剂图案之后,进行蚀刻处理以形成将像素电极与源/漏电极中的一个耦合的孔。 根据制造方法,可以使用一个掩模形成孔,从而简化制造工艺,并且通过上述形成的无机层改善与像素电极的粘合性。 该薄膜晶体管可以适当地应用于有源矩阵有机电致发光显示器。
    • 20. 发明授权
    • Organic light emitting display and method of fabricating the same
    • 有机发光显示器及其制造方法
    • US07626204B2
    • 2009-12-01
    • US11011478
    • 2004-12-13
    • Chang-Yong JeongTae-Wook KangChang-Soo KimSang-Il ParkKeun-Soo Lee
    • Chang-Yong JeongTae-Wook KangChang-Soo KimSang-Il ParkKeun-Soo Lee
    • H01L27/15
    • H01L27/3246H01L27/3248H01L27/3258H01L51/5209H01L51/56H01L2251/558
    • An organic light emitting display and method of fabricating the same are provided. The organic light emitting display includes: a TFT disposed on a substrate and having a gate electrode and source and drain electrodes; a pixel electrode formed on a planarization layer having a via contact hole over the substrate, connected to one of the source and drain electrodes through the via contact hole, and having an etching surface extending to the planarization layer; a pixel defining layer pattern for defining an emission region formed on the entire surface; an organic layer formed on an emission region of the pixel electrode, and having at least an emission layer; and an opposite electrode formed on the entire surface, thereby preventing the organic layer from being separated from an edge of the pixel electrode and a short circuit from occurring between the pixel electrode and the opposite electrode to improve device characteristics and reliability.
    • 提供了一种有机发光显示器及其制造方法。 有机发光显示器包括:设置在基板上并具有栅电极和源极和漏极的TFT; 形成在平坦化层上的像素电极,该平坦化层在基板上具有通孔接触孔,通过通孔接触孔连接到源电极和漏极之一,并具有延伸到平坦化层的蚀刻表面; 用于限定形成在整个表面上的发射区域的像素限定层图案; 形成在所述像素电极的发射区域上并且至少具有发光层的有机层; 和形成在整个表面上的相对电极,从而防止有机层与像素电极的边缘分离,并且在像素电极和相对电极之间发生短路,以提高器件特性和可靠性。